LM4250中文资料

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LM4250Programmable Operational AmplifierGeneral DescriptionThe LM4250and LM4250C are extremely versatile program-mable monolithic operational amplifiers.A single external master bias current setting resistor programs the input bias current,input offset current,quiescent power consumption,slew rate,input noise,and the gain-bandwidth product.The device is a truly general purpose operational amplifier.The LM4250C is identical to the LM4250except that the LM4250C has its performance guaranteed over a 0˚C to +70˚C temperature range instead of the −55˚C to +125˚C temperature range of the LM4250.Featuresn ±1V to ±18V power supply operationn 3nA input offset currentn Standby power consumption as low as 500nW n No frequency compensation required n Programmable electrical characteristics n Offset voltage nulling capabilityn Can be powered by two flashlight batteries nShort circuit protectionConnection DiagramsOrdering InformationTemperature Range PackageNSC MilitaryCommercial Package −55˚C ≤T A ≤+125˚C0˚C ≤T A ≤+70˚C Number LM4250CN 8-Pin N08EMolded DIP LM4250CM8-Pin M08ASurface MountLM4250J 8-Pin J08E LM4250J-MIL Ceramic DIPLM4250H LM4250CH8-Pin H08C LM4250H-MILMetal CanMetal Can PackageDS009300-2Top ViewDual-In-Line PackageDS009300-5Top ViewMay 1998LM4250Programmable Operational Amplifier©1999National Semiconductor Corporation Absolute Maximum Ratings(Note1)If Military/Aerospace specified devices are required,please contact the National Semiconductor Sales Office/Distributors for availability and specifications.(Note3)LM4250LM4250C Supply Voltage±18V±18V Operating Temp.Range−55˚C≤T A≤+125˚C0˚C≤T A≤+70˚C Differential Input Voltage±30V±30V Input Voltage(Note2)±15V±15VI SET Current150nA150nA Output Short Circuit Duration Continuous ContinuousT JMAXH-Package150˚C100˚C N-Package100˚C J-Package150˚C100˚C M-Package100˚C Power Dissipation at T A=25˚CH-Package(Still Air)500mW300mW (400LF/Min Air Flow)1200mW1200mW N-Package500mW J-Package1000mW600mW M-Package350mW Thermal Resistance(Typical)θJAH-Package(Still Air)165˚C/W165˚C/W (400LF/Min Air Flow)65˚C/W65˚C/W N-Package130˚C/W J-Package108˚C/W108˚C/W M-Package190˚C/W (Typical)θJCH-Package21˚C/W21˚C/W Storage Temperature Range−65˚C to+150˚C−65˚C to+150˚CSoldering InformationDual-In-Line PackageSoldering(10seconds)260˚C Small Outline PackageVapor Phase(60seconds)215˚C Infrared(15seconds)220˚C See AN-450“Surface Mounting Methods and Their Effecton Product Reliability”for other methods of soldering surface mount devices.ESD tolerance(Note4)800V Note1:“Absolute Maximum Ratings”indicate limits beyond which damage to the device may occur.Operating Ratings indicate conditions for which the device is functional,but do not guarantee specific performance limits.Note2:For supply voltages less than±15V,the absolute maximum input voltage is equal to the supply voltage.Note3:Refer to RETS4250X for military specifications.Note4:Human body model,1.5kΩin series with100pF.2Resistor BiasingSet Current Setting Resistor to V−I SETV S0.1µA0.5µA 1.0µA5µA10µA±1.5V25.6MΩ 5.04MΩ 2.5MΩ492kΩ244kΩ±3.0V55.6MΩ11.0MΩ 5.5MΩ 1.09MΩ544kΩ±6.0V116MΩ23.0MΩ11.5MΩ 2.29MΩ 1.14MΩ±9.0V176MΩ35.0MΩ17.5MΩ 3.49MΩ 1.74MΩ±12.0V236MΩ47.0MΩ23.5MΩ 4.69MΩ 2.34MΩ±15.0V296MΩ59.0MΩ29.5MΩ 5.89MΩ 2.94MΩElectrical CharacteristicsLM4250(−55˚C≤T A≤+125˚C unless otherwise specified.)T A=T JV S=±1.5VParameter Conditions I SET=1µA I SET=10µAMin Max Min MaxV OS R S≤100kΩ,T A=25˚C3mV5mVI OS T A=25˚C3nA10nAI bias T A=25˚C7.5nA50nA Large Signal Voltage R L=100kΩ,T A=25˚C40kGain V O=±0.6V,R L=10kΩ50kSupply Current T A=25˚C7.5µA80µA Power Consumption T A=25˚C23µW240µWV OS R S≤100kΩ4mV6mVI OS T A=+125˚C5nA10nAT A=−55˚C3nA10nAI bias7.5nA50nA Input Voltage Range±0.6V±0.6VLarge Signal Voltage Gain V O=±0.5V,R L=100kΩ30kR L=10kΩ30kOutput Voltage Swing R L=100kΩ±0.6VR L=10kΩ±0.6VCommon Mode Rejection Ratio R S≤10kΩ70dB70dBSupply Voltage Rejection Ratio R S≤10kΩ76dB76dBSupply Current8µA90µAV S=±15VParameter Conditions I SET=1µA I SET=10µAMin Max Min MaxV OS R S≤100kΩ,T A=25˚C3mV5mVI OS T A=25˚C3nA10nAI bias T A=25˚C7.5nA50nA Large Signal Voltage R L=100kΩ,T A=25˚C100kGain V O=±10V,R L=10kΩ100kSupply Current T A=25˚C10µA90µA Power Consumption T A=25˚C300µW 2.7mWV OS R S≤100kΩ4mV6mVI OS T A=+125˚C25nA25nAT A=−55˚C3nA10nAI bias7.5nA50nA Input Voltage Range±13.5V±13.5V3Electrical Characteristics(Continued)V S=±15VParameter Conditions I SET=1µA I SET=10µAMin Max Min Max Large Signal Voltage V O=±10V,R L=100kΩ50kGain R L=10kΩ50kOutput Voltage Swing R L=100kΩ±12VR L=10kΩ±12VCommon Mode Rejection Ratio R S≤10kΩ70dB70dBSupply Voltage Rejection Ratio R S≤10kΩ76dB76dBSupply Current11µA100µA Power Consumption330µW3mWElectrical CharacteristicsLM4250C(0˚C≤T A≤+70˚C unless otherwise specified.)T A=T JV S=±1.5VParameter Conditions I SET=1µA I SET=10µAMin Max Min Max V OS R S≤100kΩ,T A=25˚C5mV6mV I OS T A=25˚C6nA20nA I bias T A=25˚C10nA75nA Large Signal Voltage Gain R L=100kΩ,T A=25˚C25kV O=±0.6V,R L=10kΩ25kSupply Current T A=25˚C8µA90µA Power Consumption T A=25˚C24µW270µW V OS R S≤10kΩ 6.5mV7.5mV I OS8nA25nA I bias10nA80nA Input Voltage Range±0.6V±0.6VLarge Signal Voltage V O=±0.5V,R L=100kΩ25kGain R L=10kΩ25kOutput Voltage Swing R L=100kΩ±0.6VR L=10kΩ±0.6VCommon Mode Rejection Ratio R S≤10kΩ70dB70dBSupply Voltage Rejection Ratio R S≤10kΩ74dB74dBSupply Current8µA90µA Power Consumption24µW270µWV S=±15VParameter Conditions I SET=1µA I SET=10µAMin Max Min Max V OS R S≤100kΩ,T A=25˚C5mV6mV I OS T A=25˚C6nA20nA I bias T A=25˚C10nA75nA Large Signal Voltage R L=100kΩ,T A=25˚C60kGain V O=±10V,R L=10kΩ60kSupply Current T A=25˚C11µA100µA Power Consumption T A=25˚C330µW3mW V OS R S≤100kΩ 6.5mV7.5mV I OS8nA25nA I bias10nA80nA4Electrical Characteristics(Continued)V S=±15VParameter Conditions I SET=1µA I SET=10µAMin Max Min Max Input Voltage Range±13.5V±13.5VLarge Signal Voltage V O=±10V,R L=100kΩ50kGain R L=10kΩ50kOutput Voltage Swing R L=100kΩ±12VR L=10kΩ±12VCommon Mode Rejection Ratio R S≤10kΩ70dB70dBSupply Voltage Rejection Ratio R S≤10kΩ74dB74dBSupply Current11µA100µA Power Consumption330µW3mWTypical Performance CharacteristicsInput Bias Current vs I SETDS009300-15Input Bias Current vsTemperatureDS009300-16Input Offset Current vsTemperatureDS009300-17Unnulled Input Offset Voltage Change vs I SETDS009300-18Unnulled Input Offset VoltageChange vs TemperatureDS009300-19Peak to Peak Output VoltageSwing vs Load ResistanceDS009300-20 5Typical Performance Characteristics(Continued)Peak to Peak Output Voltage Swing vs Supply VoltageDS009300-21Quiescent Current (I q )vs TemperatureDS009300-22Quiescent Current (I q )vs I SETDS009300-23Slew Rate vs I SETDS009300-24Gain Bandwidth Product vs I SET DS009300-25Open Loop Voltage Gain vs I SETDS009300-26Phase Margin vs I SETDS009300-27Input Noise Current (I n )and Voltage (E n )vs FrequencyDS009300-28R SET vs I SETDS009300-29 6Typical ApplicationsX5Difference AmplifierDS009300-3Quiescent P D =0.6mW500Nano-Watt X10AmplifierDS009300-4Quiescent P D =500nWFloating Input Meter Amplifier100nA full ScaleDS009300-8Quiescent P D =1.8µW*Meter movement (0–100µA,2k Ω)marked for 0–100nA full scale.7Typical Applications(Continued)X100Instrumentation Amplifier 10µWDS009300-9Note 5:Quiescent P D =10µW.Note 6:R2,R3,R4,R5,R6and R7are 1%resistors.Note 7:R11and C1are for DC and AC common mode rejection adjustments.R SET Connected to V −DS009300-10R SET Connected to GroundDS009300-11DS009300-30Transistor Current SourcingBiasingDS009300-12*R1limits I SET maximumFET Current Sourcing Biasing DS009300-13Offset Null CircuitDS009300-14 8Schematic DiagramDS009300-19Physical Dimensions inches(millimeters)unless otherwise notedMetal Can Package(H)Order Number LM4250H,LM4250CH or LM4250H-MILNS Package Number H08CCeramic Dual-In-Line Package(J)Order Number LM4250J,or LM4250J-MILNS Package Number J08A10Physical Dimensions inches(millimeters)unless otherwise noted(Continued)Small Outline Package(M)Order Number LM4250MNS Package Number M08AMolded Dual-In-Line Package(N)Order Number LM4250CNNS Package Number N08E11NotesLIFE SUPPORT POLICYNATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION.As used herein:1.Life support devices or systems are devices or systems which,(a)are intended for surgical implant into the body,or (b)support or sustain life,and whose failure to perform when properly used in accordance with instructions for use provided in the labeling,can be reasonably expected to result in a significant injury to the user.2.A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system,or to affect its safety or effectiveness.National Semiconductor Corporation AmericasTel:1-800-272-9959Fax:1-800-737-7018Email:support@National Semiconductor EuropeFax:+49(0)180-5308586Email:europe.support@Deutsch Tel:+49(0)180-5308585English Tel:+49(0)180-5327832Français Tel:+49(0)180-5329358Italiano Tel:+49(0)180-5341680National Semiconductor Asia Pacific Customer Response Group Tel:65-2544466Fax:65-2504466Email:sea.support@National Semiconductor Japan Ltd.Tel:81-3-5639-7560Fax:81-3-5639-7507L M 4250P r o g r a m m a b l e O p e r a t i o n a l A m p l i f i e rNational does not assume any responsibility for use of any circuitry described,no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.。