BUK127-50DL中文资料

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At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
EDSM EDRM
-
12 18 K/W
-
40
- K/W
-
-
70 K/W
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy. 2 Refer to OVERLOAD PROTECTION CHARACTERISTICS. 3 Not in an overload condition with drain current limiting. 4 Temperature measured 1.3 mm from tab.
2 drain
3 source
4 drain (tab)
SOURCE
Fig.1. Elements of the TOPFET.
PIN CONFIGURATION
4
SYMBOL
D TOPFET
I P
1
2
3
S
October 2001
1
Rev 1.011
Philips Semiconductors
PowerMOS transistor Logic level TOPFET
CONDITIONS
MIN.
Overload protection
-40˚C ≤ Tj ≤ 150˚C
ID
Drain current limiting
VIS = 5 V
0.8
VIS = 4.5 V
0.7
VIS = 4 V to 5.5 V
0.6
TYP.
1.3 -
MAX. UNIT
1.7 A
-
A
1.8 A
VDS
Continuous drain source voltage
ID
Continuous drain current
PD
Total power dissipation
Tj RDS(ON)
Continuous junction temperature Drain-source on-state resistance
October 2001
3
Rev 1.011
Philips Semiconductors
PowerMOS transistor Logic level TOPFET
Product specification
BUK127-50DL
OVERLOAD PROTECTION CHARACTERISTICS
TOPFET switches off to protect itself when one of the overload thresholds is exceeded. It remains latched off until reset by the input.
SYMBOL PARAMETER
10
II = 1.5 mA
5.5
Tmb = 25˚C
-
TYP.
1.6 220 195 400 250 2
40 33
MAX. UNIT
2.4 V 2.1 V
400 µA 330 µA
650 µA 430 µA
2.9 V
100 µs
8.5 V
-
kΩ
1 The input voltage below which the overload protection circuits will be reset. 2 Not directly measureable from device terminals.
ID
Continuous drain current2
II
Continuous input current
IIRM
Non-repetitive peak input current
PD
Total power dissipation
Tstg
Storage temperature
Tj
Continuous junction temperature
Thermal resistance Junction to solder point Junction to board4 Junction to ambient
CONDITIONS
Mounted on any PCB Mounted on PCB of fig. 22
MIN. TYP. MAX. UNIT
APPLICATIONS
General purpose switch for driving lamps motors solenoids heaters
in automotive systems and other applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
SYMBOL PARAMETER
REQUIRED CONDITION
MIN. MAX. UNIT
VDDP
Protected drain source supply voltage VIS ≥ 4 V
-
35
V
THERMAL CHARACTERISTICS
SYMBOL PARAMETER
Rth j-sp Rth j-b Rth j-a
CONDITIONS
clamping tp ≤ 1 ms Ta = 25˚C normal operation3
MIN.
-55 -
ESD LIMITING VALUE
SYMBOL PARAMETER
VC
Electrostatic discharge capacitor
voltage
ITIONS
Philips Semiconductors
PowerMOS transistor Logic level TOPFET
Product specification
BUK127-50DL
DESCRIPTION
Monolithic temperature and overload protected logic level power MOSFET in TOPFET2 technology assembled in a 3 pin surface mount plastic package.
PD(TO) TDSC
SYMBOL PARAMETER
CONDITIONS
MIN.
VIS(TO)
IIS
IISL
VISR tlr V(CL)IS RIG
Input threshold voltage
Input supply current
Input supply current
Protection reset voltage1 Latch reset time Input clamping voltage Input series resistance2 to gate of power MOSFET
FUNCTIONAL BLOCK DIAGRAM
INPUT
O/V CLAMP
RIG
LOGIC AND PROTECTION
MAX. 50 0.7 1.8 150 200
UNIT V A W ˚C mΩ
DRAIN
POWER MOSFET
PINNING - SOT223
PIN
DESCRIPTION
1 input
October 2001
2
Rev 1.011
Philips Semiconductors
PowerMOS transistor Logic level TOPFET
Product specification
BUK127-50DL
OUTPUT CHARACTERISTICS
Limits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb = 25 ˚C unless otherwise specified
Human body model; C = 250 pF; R = 1.5 kΩ
MAX.
50 self limiting
3 10 1.8 150 150
UNIT
V A mA mA W ˚C ˚C
MIN. -
MAX. 2
UNIT kV
OVERVOLTAGE CLAMPING LIMITING VALUES
SYMBOL PARAMETER
CONDITIONS
MIN.
Off-state
VIS = 0 V
V(CL)DSS Drain-source clamping voltage ID = 10 mA
50
ID = 200 mA; tp ≤ 300 µs; δ ≤ 0.01
50
IDSS
Drain source leakage current VDS = 40 V
Non-repetitive clamping energy Repetitive clamping energy
Ta ≤ 25˚C; IDM < ID(lim); inductive load