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TLC083中文资料

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−40°C to 125°C
† This package is available taped and reeled. To order this packaging option, add an R suffix to the part number (e.g., TLC084CDR).
2

元器件交易网
TLC080, TLC081, TLC082, TLC083, TLC084, TLC085, TLC08xA FAMILY OF WIDEĆBANDWIDTH HIGHĆOUTPUTĆDRIVE SINGLE SUPPLY OPERATIONAL AMPLIFIERS
−40°C to 125°C
† This package is available taped and reeled. To order this packaging option, add an R suffix to the part number (e.g., TLC080CDR). TLC082 and TLC083 AVAILABLE OPTIONS PACKAGED DEVICES TA SMALL OUTLINE (D)† TLC082CD TLC083CD TLC082ID TLC083ID TLC082AID TLC083AID MSOP (DGN)† TLC082CDGN — TLC082IDGN — — — SYMBOL‡ xxTIADZ — xxTIAEA — — — (DGQ)† — TLC083CDGQ — TLC083IDGQ — — SYMBOL‡ — xxTIAEB — xxTIAEC — — PLASTIC DIP (N) — TLC083CN — TLC083IN — TLC083AIN PLASTIC DIP (P) TLC082CP — TLC082IP — TLC082AIP —
0°C to 70°C
−40°C to 125°C
† This package is available taped and reeled. To order this packaging option, add an R suffix to the part number (e.g., TLC082CDR). ‡ xx represents the device date code. TLC084 and TLC085 AVAILABLE OPTIONS PACKAGED DEVICES TA 0°C to 70°C SMALL OUTLINE (D)† TLC084CD TLC085CD TLC084ID TLC085ID TLC084AID TLC085AID PLASTIC DIP (N) TLC084CN TLC085CN TLC084IN TLC085IN TLC084AIN TLC085AIN TSSOP (PWP)† TLC084CPWP TLC085CPWP TLC084IPWP TLC085IPWP TLC084AIPWP TLC085AIPWP
Operational Amplifier
− +
description
The first members of TI’s new BiMOS general-purpose operational amplifier family are the TLC08x. The BiMOS family concept is simple: provide an upgrade path for BiFET users who are moving away from dual-supply to single-supply systems and demand higher ac and dc performance. With performance rated from 4.5 V to 16 V across commercial (0°C to 70°C) and an extended industrial temperature range (−40°C to 125°C), BiMOS suits a wide range of audio, automotive, industrial, and instrumentation applications. Familiar features like offset nulling pins, and new features like MSOP PowerPAD packages and shutdown modes, enable higher levels of performance in a variety of applications. Developed in TI’s patented LBC3 BiCMOS process, the new BiMOS amplifiers combine a very high input impedance, low-noise CMOS front end with a high-drive bipolar output stage, thus providing the optimum performance features of both. AC performance improvements over the TL08x BiFET predecessors include a bandwidth of 10 MHz (an increase of 300%) and voltage noise of 8.5 nV/√Hz (an improvement of 60%). DC improvements include an ensured VICR that includes ground, a factor of 4 reduction in input offset voltage down to 1.5 mV (maximum) in the standard grade, and a power supply rejection improvement of greater than 40 dB to 130 dB. Added to this list of impressive features is the ability to drive ±50-mA loads comfortably from an ultrasmall-footprint MSOP PowerPAD package, which positions the TLC08x as the ideal high-performance general-purpose operational amplifier family.
Copyright 2000−2004 Texas Instruments Incorporated

1
元器件交易网
SLOS254D − JUNE 1999 − REVISED FEBRUARY 2004
TLC080, TLC081, TLC082, TLC083, TLC084, TLC085, TLC08xA FAMILY OF WIDEĆBANDWIDTH HIGHĆOUTPUTĆDRIVE SINGLE SUPPLY OPERATIONAL AMPLIFIERS
SLOS254D − JUNE 1999 − REVISED FEBRUARY 2004
TLC08x PACKAGE PINOUTS
TLC080 D, DGN, OR P PACKAGE (TOP VIEW) TLC081 D, DGN, OR P PACKAGE (TOP VIEW) TLC082 D, DGN, OR P PACKAGE (TOP VIEW)
SLOS254D − JUNE 1999 − REVISED FEBRUARY 2004
D Wide Bandwidth . . . 10e D D D D D D D
− IOH . . . 57 mA at VDD − 1.5 V − IOL . . . 55 mA at 0.5 V High Slew Rate − SR+ . . . 16 V/µs − SR− . . . 19 V/µs Wide Supply Range . . . 4.5 V to 16 V Supply Current . . . 1.9 mA/Channel Ultralow Power Shutdown Mode IDD . . . 125 µA/Channel Low Input Noise Voltage . . . 8.5 nV√Hz Input Offset Voltage . . . 60 µV Ultra-Small Packages − 8 or 10 Pin MSOP (TLC080/1/2/3)
TLC080 and TLC081 AVAILABLE OPTIONS PACKAGED DEVICES TA 0°C to 70°C SMALL OUTLINE (D)† TLC080CD TLC081CD TLC080ID TLC081ID TLC080AID TLC081AID SMALL OUTLINE (DGN)† TLC080CDGN TLC081CDGN TLC080IDGN TLC081IDGN — — SYMBOL xxTIACW xxTIACY xxTIACX xxTIACZ — — PLASTIC DIP (P) TLC080CP TLC081CP TLC080IP TLC081IP TLC080AIP TLC081AIP
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

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TLC082中文资料

TLC082中文资料

FAMILY PACKAGE TABLE DEVICE TLC080 TLC081 TLC082 TLC083 TLC084 TLC085 NO. OF CHANNELS 1 1 2 2 4 4 PACKAGE TYPES MSOP 8 8 8 10 — — PDIP 8 8 8 14 14 16 SOIC 8 8 8 14 14 16 TSSOP — — — — 20 20 — Yes — Yes Refer to the EVM Selection Guide (Lit# SLOU060) SHUTDOWN Yes UNIVERSAL EVM BOARD
−40°C to 125°C
† This package isБайду номын сангаасavailable taped and reeled. To order this packaging option, add an R suffix to the part number (e.g., TLC084CDR).
2

Operational Amplifier
− +
description
The first members of TI’s new BiMOS general-purpose operational amplifier family are the TLC08x. The BiMOS family concept is simple: provide an upgrade path for BiFET users who are moving away from dual-supply to single-supply systems and demand higher ac and dc performance. With performance rated from 4.5 V to 16 V across commercial (0°C to 70°C) and an extended industrial temperature range (−40°C to 125°C), BiMOS suits a wide range of audio, automotive, industrial, and instrumentation applications. Familiar features like offset nulling pins, and new features like MSOP PowerPAD packages and shutdown modes, enable higher levels of performance in a variety of applications. Developed in TI’s patented LBC3 BiCMOS process, the new BiMOS amplifiers combine a very high input impedance, low-noise CMOS front end with a high-drive bipolar output stage, thus providing the optimum performance features of both. AC performance improvements over the TL08x BiFET predecessors include a bandwidth of 10 MHz (an increase of 300%) and voltage noise of 8.5 nV/√Hz (an improvement of 60%). DC improvements include an ensured VICR that includes ground, a factor of 4 reduction in input offset voltage down to 1.5 mV (maximum) in the standard grade, and a power supply rejection improvement of greater than 40 dB to 130 dB. Added to this list of impressive features is the ability to drive ±50-mA loads comfortably from an ultrasmall-footprint MSOP PowerPAD package, which positions the TLC08x as the ideal high-performance general-purpose operational amplifier family.
TLC0832中文翻译

TLC0832中文翻译

TLC0831C,TLC0831ITLC0832C, TLC0832I8 位串行控制模数转换一、综述1.1 特点·8 位分辨率·易于和微处理器接口或独立使用·满比例尺工作或用 5V 基准电压·单通道或多路器选择的双通道，可单端或差分输入选择·单 5V 供电，输入范围 0-5V·输入和输出与 TTL 和 CMOS 兼容·在 FCLOCK=250kHz 时，转换时间为 32 μs·设计成可以和国家半导体公司的 ADC0831 和 ADC0832 互换·总非调整误差± 1LSB1.2 介绍这些器件是 8 位逐次逼近模数转换器。

TLC0831 有一个输入通道。

TLC0832 有两个可多路选择的输入通道。

串行输出可配置为和标准移位寄存器或微处理器接口。

TLC0832 的多路器可用软件配置为单端或差分输入。

差分的模拟电压输入可以共模抑制和使模拟输入电压偏移值为零。

另外，输入基准电压可以调整大小，在全 8 位分辨率下允许任意小的模拟电压编码间隔。

TLC0831 、 TLC0832 的工作和更多路输入的 TLC0834 、 TLC0838 非常相似。

使 REF 端输入等于最大模拟信号输入值，可以得到满比例尺转换，获得最高的转换分辨率。

典型地， REF 端设为等于 Vcc（ TLC0832内部已设定）。

TLC0831C 和 TLC0832C 的工作温度范围为 0 ～ 70 ℃。

TLC0831I 和TLC0832I 的工作温度范围为-40 ～85 ℃。

TA 封装小型（ D ）塑料 DIP （ P ）0℃至70℃TLC0831CD TLC0832CD TLC0831CP TLC0832CP-40至85℃TLC0831ID TLC0832ID TLC0831IP TLC0832IP1.3 引脚排列TLC0831 及 TLC0832 的引脚排列如下图所示。

TLC0838中文资料

TLC0838中文资料

元器件交易网IMPORTANT NOTICETexas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinueany product or service without notice, and advise customers to obtain the latest version of relevant informationto verify, before placing orders, that information being relied on is current and complete. All products are soldsubject to the terms and conditions of sale supplied at the time of order acknowledgement, including thosepertaining to warranty, patent infringement, and limitation of liability.TI warrants performance of its semiconductor products to the specifications applicable at the time of sale inaccordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extentTI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarilyperformed, except those mandated by government requirements.CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OFDEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICALAPPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, ORWARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHERCRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TOBE FULLY AT THE CUSTOMER’S RISK.In order to minimize risks associated with the customer’s applications, adequate design and operatingsafeguards must be provided by the customer to minimize inherent or procedural hazards.TI assumes no liability for applications assistance or customer product design. TI does not warrant or representthat any license, either express or implied, is granted under any patent right, copyright, mask work right, or otherintellectual property right of TI covering or relating to any combination, machine, or process in which suchsemiconductor products or services might be or are used. TI’s publication of information regarding any thirdparty’s products or services does not constitute TI’s approval, warranty or endorsement thereof.Copyright © 1998, Texas Instruments Incorporated。

TLC386A中文资料

TLC386A中文资料

TLC116--->TLC386T/D/S/AFebruary 1999Ed:1ASENSITIVE GATE TRIACS®Symbol ParameterValue Unit I T(RMS)RMS on-state current (360°conduction angle)Tl =40°C 3ATa =25°C 1.3(1)I TSMNon repetitive surge peak on-state current (Tj initial =25°C )tp =8.3ms 31.5Atp =10ms 30I 2t I 2t valuetp =10ms 4.5A 2s dI/dtCritical rate of rise of on-state currentGate supply :I G =50mA di G /dt =0.1A/µsRepetitive F =50Hz 10A/µsNon Repetitive50Tstg Tj Storage and operating junction temperature range-40to +150-40to +110°C °C TlMaximum lead temperature for soldering during 4s at 4.5mm from case230°CTL (Plastic).VERY LOW I GT =5mA max .LOW I H =15mA maxDESCRIPTIONSymbol ParameterTLCUnit116T/D/S/A226T/D/S/A336T/D/S/A386T/D/S/AV DRM V RRMRepetitive peak off-state voltage Tj =110°C200400600700VABSOLUTE RATINGS (limiting values)FEATURESThe TLC116--->TLC386T/D/S/A triac family uses a high performance glass passivated PNPN technology.These parts are suitable for general purpose ap-plications where gate high sensitivity is required.Application on 4Q such as phase control and static (1)With Cu surface 1cm 2.A 1GA 21/5GATE CHARACTERISTICS (maximum values)Symbol ParameterValue Unit Rth (j-a)Junction to ambient on printed circuit with Cu surface 1cm 250°C/W Rth (j-l)DC Junction leads for DC 20°C/W Rth (j-l)ACJunction leads for 360°conduction angle (F=50Hz)15°C/WSymbolTest ConditionsQuadrantSuffix UnitTD S A I GTV D =12V(DC)R L =33ΩTj=25°CI-II-III MAX 551010mA IVMAX 5101025V GT V D =12V(DC)R L =33ΩTj=25°C I-II-III-IV MAX 1.5V V GD V D =V DRM R L =3.3k ΩTj=110°C I-II-III-IV MIN 0.2V tgt V D =V DRM I G =40mA dI G /dt =0.5A/µs Tj=25°C I-II-III-IV TYP 2µs I LIG=1.2I GTTj=25°CI-III-IV MAX15152525mA II15152525I H *I T =100mA gate open Tj=25°C MAX 15152525mA V TM *I TM =4A tp=380µs Tj=25°C MAX 1.85V I DRM I RRM V DRM Rated V RRMRatedTj=25°C MAX 0.01mATj=110°C MAX 0.75dV/dt *Linear slope uptoV D =67%V DRM gate open Tj=110°CTYP10102020V/µs(dV/dt)c *(dI/dt)c =1.3A/msTj=110°C TYP 1155V/µs*For either polarity of electrode A 2voltage with reference to electrode A 1.P G (AV)=0.1WP GM =2W (tp =20µs)I GM =1A (tp =20µs)V GM =16V (tp =20µs).ELECTRICAL CHARACTERISTICSTHERMAL RESISTANCESTLC116T/D/S/A --->TLC386T/D/S/A2/5Package I T(RMS)V DRM/V RRM Sensitivity SpecificationA V T D S A TLC..63200X X X X400X X X X600X X X X700X X X X ORDERING INFORMATIONFig.1:Maximum RMS power dissipation versus RMS on-state current(F=50Hz).(Curves are cut off by(dI/dt)c limitation)Fig.2:Correlation between maximum RMS power dissipation and maximum allowable temperatures(T amb and T lead).Fig.3:RMS on-state current versus case temperature.Fig.4:Thermal transient impedance junction to caseand junction to ambient versus pulse duration.TLC116T/D/S/A--->TLC386T/D/S/A3/5Fig.5:Relative variation of gate trigger current and holding current versus junction temperature.Fig.6:Non Repetitive surge peak on-state current versus number of cycles.Fig.7:Non repetitive surge peak on-state current for a sinusoidal pulse with width:t≤10ms,and corresponding value of I2t.Fig.8:On-state characteristics(maximum values).TLC116T/D/S/A--->TLC386T/D/S/A 4/5PACKAGE MECHANICAL DATA TL PlasticMarking:type number Weight:0.75g REF.DIMENSIONSMillimeters InchesMin.Max.Min.Max. A9.5510.050.3750.396 B7.558.050.2970.317 C12.700.500D 4.25 4.750.1670.187E 1.25 1.750.0490.069F 6.757.250.2660.285G 4.500.177H 2.04 3.040.800.120 I0.750.850.0290.033DEFABCGH HIInformation furnished is believed to be accurate and reliable.However,STMicroelectronics assumes no responsibility for the conse-quences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.Specifications mentioned in this publication are subject to change without notice.This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronics©1999STMicroelectronics-Printed in Italy-All rights reserved.STMicroelectronics GROUP OF COMPANIESAustralia-Brazil-Canada-China-France-Germany-Italy-Japan-Korea-Malaysia-Malta-Mexico-Mo-rocco-The Netherlands-Singapore-Spain-Sweden-Switzerland-Taiwan-Thailand-United Kingdom-U.S.A.TLC116T/D/S/A--->TLC386T/D/S/A5/5。