ABB半导体选型样本2013

High Power Semiconductors Product Catalogue 2013Power and productivityfor a better world™Product Catalogue 2013 EditionContentsPage IGBT and Diode Dies 2 – 3 HiPak Modules 4 – 6 StakPak Modules7 Integrated Gate-Commutated Thyristors8 – 9 Gate Turn-off Thyristors10 – 11 Fast Recovery Diodes12 – 13 Standard Recovery Diodes14 Avalanche Diodes15 Drawings for Fast & Standard Recovery Diodes and Avalanche Diodes16 Welding Diodes17 Phase Control Thyristors18 – 20 Bi-Directionally Controlled Thyristors21Fast Switching Thyristors22 Reverse Conducting Thyristors23 Silicon Surge Voltage Suppressors24 BiMOS Part Numbering Structure25 Bipolar Part Numbering Structure26 – 27 ABB – Polovodice Products Cross Reference List28 – 29 Symbols30 – 31 Worldwide Distributors32 – 33High Power Semiconductors Catalogue| Contents 01Part number Thickness μmTypeSize A x B mm V RRM (V)Diodes 1.2 kV5SLY 76E12005SLY 86E12005SLY 76F12005SLY 86F12005SLY 76G12005SLY 86G12005SLY 76J12005SLY 86J12001.7 kV5SLY 86E17005SLY 86F17005SLY 86G17005SLY 86J17005SLY 12J17005SLY 86M17005SLY 12M17002.5 kV5SLX 12L25153.3 kV5SLX 12M33015SLZ 12M33054.5 kV5SLY 12M45005SLY 12N45006.5 kV5SLX 12M6521SPT +SPT +SPT +SPT +SPT +SPT +SPT +SPT +SPT +SPT SPT SPT +SPT +SPT +SPT +6.3 x 6.37.4 x 7.48.4 x 8.410.0 x 10.06.3 x 6.37.7 x 7.78.6 x 8.610.2 x 10.213.6 x 13.612.4 x 12.413.6 x 13.613.6 x 13.613.6 x 13.614.3 x 14.313.6 x 13.6350350350350390390390390390310385385570570670I F (A)V F (V)typ. 125°C Max. Dies per Wafer (W)or Tray (T)361 (W)257 (W)198 (W)137 (W)326 (W)237 (W)188 (W)131 (W)36 (T)69 (W)25 (T)36 (T)25 (T)25 (T)25 (T)25 (T)25 (T)12001200120012001700170017001700170025003300330045004500650050751001505075100150300100100125100110501.851.851.851.852.12.12.12.12.12.02.352.253.13.53.402 IGBT and Diode Dies | High Power Semiconductors Catalogue-SPT, covering the SPT and SPT + technology,is a trademark of ABB IGBT and Diode BiMOS platform-State-of the-art planar IGBT and matching fast diode dies-High dynamic ruggedness, low switching losses, low on-state voltage-Positive temperature coefficient for easy paralleling-Passivation: Silicon Nitride plus PolyimideIGBT and Diode DiesPart number Thickness μmTypeSize A x B mm V CES (V)IGBTs 1.2 kV5SMX 76E12805SMX 86E12805SMX 76H12805SMX 86H12805SMX 76K12805SMX 86K12805SMX 76L12805SMX 86L12805SMY 76H12805SMY 86H12805SMY 76J12805SMY 86J12805SMY 76K12805SMY 86K12805SMY 76M12805SMY 86M12801.7 kV5SMY 86G17215SMY 86J17215SMY 12J17215SMY 86K17215SMY 12K17215SMY 86M17215SMY 12M17212.5 kV5SMX 12L25163.3 kV5SMX 12M33005SMY 12M33104.5 kV5SMY 12M45005SMY 12N45016.5 kV5SMX 12M65015SMY 12M6501SPT SPT SPT SPT SPT +SPT +SPT +SPT +SPT +SPT+SPT +SPT +SPT SPT SPT +SPT +SPT +SPT SPT +6.5 x 6.69.1 x 9.011.0 x 11.012.6 x 12.69.1 x 9.110.2 x 10.211.2 x 11.913.5 x 13.58.6 x 8.610.1 x 10.111.4 x 11.413.6 x 13.612.4 x 12.413.6 x 13.613.6 x 13.613.6 x 13.614.3 x 14.313.6 x 13.613.6 x 13.6140140140140140140140140209209209209310385380530530670670I C (A)I CM (A)Max. Dies per Wafer (W)or Tray (T)332 (W)166 (W)112 (W)82 (W)166 (W)130 (W)98 (W)71 (W)186 (W)132 (W)36 (T)102 (W)36 (T)69 (W)25 (T)36 (T)25 (T)25 (T)25 (T)25 (T)25 (T)25 (T)120012001200120012001200120012001700170017001700250033003300450045006500650025507510057751001505075100150505062.550552531501001502001141502003001001502003001001001251001105063V CEsat (V)typ. 125°C 2.352.22.22.22.12.12.12.23.03.03.03.02.73.83.13.553.505.44.0High Power Semiconductors Catalogue | IGBT and Diode Dies 03Please refer to page 25 for part numbering structure.1.7 kV5SND 0800M1701005SNE 0800M1701005SNA 1600N1701005SNA 1800E1701005SNA 2400E1701003.3 kV5SNE 0800E3301005SNA 0800N3301005SLD 1200J3301005SNA 1200E3301005SNA 1200G3301001.7 kV5SLA 2000J1703005SNA 2000J1703005SNA 2400E1703055SNA 3600E1703005SLA 3600E1703002.5 kV5SNA 1500E2503003.3 kV5SNG 0250P3303055SLD 1000N3303005SNA 1000N3303005SNA 1500E330305170017001700170017003300330033003300330017001700170017001700250033003300330033002 x 8008001600180024008008001200120012002000200024003600360015002 x 2502 x 100010001500(3) – Dual IGBT / M (2) – Chopper / M (1) – Single IGBT / N (1) – Single IGBT / E (1) – Single IGBT / E(2) – Chopper / E (1) – Single IGBT / N (4) – Dual Diode / J (1) – Single IGBT / E (1) – Single IGBT / G(6) – Single Diode / J (1) – Single IGBT / J (1) – Single IGBT / E (1) – Single IGBT / E (6) – Single Diode / E(1) – Single IGBT / E(5) – Half Bridge / P (4) – Dual Diode / N (1) – Single IGBT / N (1) – Single IGBT / E2.62.62.62.62.63.83.8-3.83.85-2.72.43.0-2.53.1-3.13.11.71.71.71.71.72.352.352.352.352.351.81.81.671.951.952.02.252.252.252.25Part number Configuration /Outline Voltage V CES (V )Current I C (A )V CEsat (V )typ. 125°C V F (V )typ. 125°CHiPak1HiPak1HiPak1HiPak2HiPak2HiPak2HiPak1HiPak1 HV HiPak2HiPak2 HVHiPak1 HV HiPak1 HV HiPak2HiPak2HiPak2HiPak2HiPak0 HV HiPak1HiPak1HiPak2HousingTvj(operational) up to 125°C Tvj(operational) up to 150°CPlease refer to page 25 for part numbering structure.04 HiPak Modules | High Power Semiconductors CatalogueHiPak:-High power, industry standard package -Designed for high reliability-Low inductance, high current terminals-Aluminium Silicon Carbide base plate for high thermal cycling capabilities-Aluminium Nitride substrates for low thermal resistance-Designed for very high SOA (Safe Operating Area)-Smooth switching characteristics for good EMC -SPT and SPT + chip technology-Insulation capabilities above 6 or 10 kV depending on housing type4.5 kV5SNG 0150P4503005SLD 0650J4503005SNA 0650J4503005SNA 0800J4503005SLD 1200J4503505SNA 1200G4503005SNA 1200G4503506.5 kV5SNA 0400J6501005SNA 0500J6503005SLD 0600J6501005SNA 0600G6501005SNA 0750G6503004500450045004500450045004500650065006500650065002 x 1502 x 6506508002 x 1200120012004005002 x 600600750(5) – Half Bridge / P (4) – Dual Diode / J (1) – Single IGBT / J (1) – Single IGBT / J (4) – Dual Diode / J (1) – Single IGBT / G (1) – Single IGBT / G(1) – Single IGBT / J (1) – Single IGBT / J (4) – Dual Diode / J (1) – Single IGBT / G (1) – Single IGBT / G3.5-3.73.55-3.553.555.43.9-5.43.93.453.43.43.53.53.53.53.43.43.43.43.4Part number Configuration /Outline Voltage V CES (V )Current I C (A )V CEsat (V )typ. 125°C V F (V )typ. 125°CHiPak0 HV HiPak1 HV HiPak1 HV HiPak1 HV HiPak1 HV HiPak2 HV HiPak2 HVHiPak1 HV HiPak1 HV HiPak1 HV HiPak2 HV HiPak2 HVHousingTvj(operational) up to 125°C Configurations(1)(2)(4)(3)(5)(6)High Power Semiconductors Catalogue | HiPak Modules 05Please refer to page 25 for part numbering structure.HiPak:-High power, industry standard package -Designed for high reliability-Aluminium Silicon Carbide base plate for high thermal cycling capabilities-Aluminium Nitride substrates for low thermal resistance-Designed for very high SOA (Safe Operating Area)-Smooth switching characteristics for good EMC -SPT and SPT + chip technology-Insulation capability up to and above 10 kVDimensions in mm06 HiPak Modules |High Power Semiconductors Catalogue5SNR 10H25015SNR 13H25015SNR 20H25015SNA 1300K4503005SNA 2000K4503005SNA 2000K4513002500250025004500450045001000130020001300200020002.72.72.73.43.43.51.91.91.92.32.43.0Part number Voltage V CES (V )Current I C (A )V CEsat (V )typ. 125°C V F (V )typ. 125°C H H H K K KHousingsConfigurationHKOutline DrawingsStakPak ModulesHigh Power Semiconductors Catalogue | StakPak Modules 07-Press-pack IGBT -High SOA-Stable shorted state in case of failure-High tolerance for uneven mounting pressure -Designed for series connection -Explosion resistant package237.326235.111.8531.51.728.75Collector (6x)GateEmitterAux.EmitterLabelunclamped clamped236.332582624.6150.3R 81.58.312GateEmitter261.51.74000A T VJM V Part number V DRM V5SHY 35L45205SHY 35L45215SHY 35L45225SHY 40L45115SHY 55L45005SHY 50L55005SHY 42L6500Fig. 1Fig. 1Fig. 1Fig. 1Fig. 1Fig. 1Fig. 1V DC VV RRM VI TGQM AI TAVMT C =85°C AI TSM3msT VJMkA10ms T VJM kA V T V T0 T VJM V r T m ΩT VJM °C R thJC K/kW R thCH K/kW F m kN V GIN V OutlineI TGQM T VJM V Part number V DRM V5SHX 08F4510GCTDiode part5SHX 14H4510GCTDiode part5SHX 26L4520GCTDiode part5SHX 06F6010GCTDiode part5SHX 10H6010GCTDiode part5SHX 19L6020GCTDiode partFig. 2Fig. 3Fig. 1Fig. 2Fig. 3Fig. 1V DC V I TGQM A I TAVM / I FAVM T C =85°CA I TSM / I FSM 10ms T VJM kA V T / V F V T0 / V F0 T VJM V r T / r F m ΩI rr A T VJM °C R thJC K/kW F m kN V GIN VOutlinedi/dtmax.A/μsAsymmetric IGCTs 45004500450045004500550065002800280028002800280033004000171717171717174000400040003600500036003800170017002100143018601290129050505639504040323235283326262.702.702.003.502.354.104.101.401.401.151.701.301.661.880.330.330.210.450.260.620.561251251251251251251258.58.58.58.58.58.58.533333334040404040404028-4028-4028-4028-4028-4028-4028-4045004500450055005500550028002800280033003300330063011002200520900180025013042016010103902101103501708403405.06.18.89.417.010.63.52.57.57.618.07.73.005.703.006.652.955.403.506.303.456.403.456.401.802.801.653.151.802.702.303.301.652.531.902.702.004.601.203.200.531.242.305.802.004.300.902.2340046090032043078011511512511511512540532542132640532542132616204416204428-4028-4028-4028-4028-4028-40250425650190285510-optimized for snubberless turn-off -contact factory for series connection- monolithic integrated freewheeling diode optimized for snubberless turn-off -contact factory for symmetrical devicesReverse conducting IGCTs Integrated Gate-Commutated Thyristors08 IGCTs | High Power Semiconductors Catalogue-Patented free-floating silicon technology -Optical trigger input and status feedback -Patented low-inductance housing technology -Fast response and precise timing -AC square wave or DC supply input -Cosmic radiation resistance ratingPlease refer to page 26 for part numbering structure.Dimensions in mmFast Recovery Diode RecommendationFor all asymmetric and reverse conducting IGCTs, ABB offers matching freewheeling, neutral point (NPC) and clamp diodes. The actual choice of the diode depends on the specific application. Please see application note 5SYA 2064-01.High Power Semiconductors Catalogue| IGCTs 09** = VDRM /100VFine Pattern Type 5SGF 30J4502 5SGF 40L4502I TGQMTVJMVPart number VDRMV Asymmetric5SGA 15F2502 5SGA 20H2501 5SGA 25H2501 5SGA 30J25015SGA 06D4502 5SGA 20H4502 5SGA 30J4502 5SGA 40L4501FHHJDHJLJL VDCVVRRMVITGQMat CSAITAVMTC=85°CAITSM8.3msTVJMkA10msTVJMkAVTVT0TVJMVrTmΩTVJM°CRthJCK/kWRthCHK/kWFmkNHousing μF250025002500250045004500450045004500450014001400140014002800220028002800300028001717171717171717171715002000250030006002000300040003000400057083083013002107109301000960118010.617.017.031.03.114.025.026.025.026.010.016.016.030.03.013.024.025.024.025.02.802.803.102.504.003.504.004.403.903.801.451.661.661.501.901.802.202.101.801.200.900.570.570.333.500.850.600.580.700.65125125125125125125125125125125271717125017121112118553853333152020401120404033403465146636ITGQMTVJMVPart number VDRM, VRRMV Symmetric5SGS 08D2500 5SGS 12F2500 5SGS 16H2500 5SGS 08D4500 5SGS 12F4500 5SGS 16H4500D1F1H1D1F1H1 ITGQMat CSAITAVMTC=70°CAITSM8.3msTVJMkA10msTVJMkAVTVT0TVJMVrTmΩTVJM°CRthJCK/kWRthCHK/kWFmkNHousing μF25002500250045004500450080012001600800120016003956307602854426004.8010.6815.004.278.1012.804.510.014.04.07.612.03.203.203.784.334.504.451.631.491.811.772.282.301.901.381.183.101.791.3012512512511511511540.024.018.040.024.018.012.08.06.012.08.06.05101551015234234Asymmetric with Buffer LayerGate Turn-off Thyristors 10 Gate Turn-off Thyristors |High Power Semiconductors Catalogue -Excellent trade-off between on-state and switching losses-Cosmic radiation resistance ratingPlease refer to page 26 for part numbering structure.Fast Recovery Diode RecommendationFor all GTO types, ABB offers matching freewheeling and snubber diodes.The actual choice of the diode depends on the specific application. Please see application note 5SYA 2064-01.J LD F Dimensions in mmF1H1High Power Semiconductors Catalogue | Gate Turn-off Thyristors 11Ø67 max.Ø47Ø3.5Ø3.5Ø47Ø74.5 max.2226250Soldered connectorsCoaxial cable 3/3.5mm 2 ETFEAC - blackG - white Ø5.520°Ø4.3Ø90 max.Coaxial cable 3/3.5mm 2 ETFEAC - blackG - white20°Ø5.5Ø4.3Ø3.522Soldered connectors26Ø3.5Ø63Ø100 max.Ø63250D1Ø53 max.Ø3.5Ø34Soldered connectors225Ø4.3AC - blackG - whiteØ3.6Coaxial cable 2/1mm 2 ETFE2226Ø3.5Ø58.5 max.Ø34V Part number V RRM V5SDF 13H45015SDF 10H6004H HV DC V I FAVM T C =85°CA I FSM1ms T VJM kA 10ms T VJM kA V F0 T VJM r F m ΩT VJM °C R thJC K/kW R thCH K/kW F m kN Housing450060002800380012001100604425.018.01.301.500.480.601251251212334040Q rr μC 30006000I rrA 8001000di/dt=300 A/μsT VJMPlease refer to page 27 for part numbering structure.GTO Freewheeling Diodes V Part number ** = V RRM / 100VV RRM V5SDF 06D25045SDF 06T25045SDF 12F25055SDF 12T25055SDF 04D45045SDF 04T45045SDF 08F45055SDF 08T4505D T1F T2D T1F T2I FAVMT C =85°C A I FSM8.3ms T VJMkA 10msT VJM kA V F0 T VJM r F m ΩT VJM °C R thJC K/kW R thCH K/kW F m kN Housing250025002500250045004500450045006156151256125636136176776710.710.720.320.36.46.416.016.010.010.019.019.06.06.015.015.01.201.201.201.201.861.861.811.810.460.460.240.241.541.540.730.731251251251251251251251253232151532321515884488441010222210102222Q rr μC 400400700700400400700700I rrA 200200230230200200230230di/dt=80 A/μsT VJM12 Fast Recovery Diodes | High Power Semiconductors CatalogueFast Recovery Diodes-Optimized for fast and soft turn-off -Small reverse recovery charge -High di/dt capability at turn-off-Range optimally suited for GTO and IGCT applications-Cosmic radiation resistance ratingABB Semiconductors has a long history of producing high power fast recovery diodes for applications such as Voltage Source Converters (VSC), Current Source Converters (CSC) and DC Snubbers. The diodes are typically used in combination with IGCTs and GTOs as free-wheeling diodes, snubber diodes and clamp diodes. Fast Recovery Diode recommendations for various applications can be found in the ABB application note 5SYA 2064-01.V Part number V RRM V5SDF 03D45025SDF 05F45025SDF 10H45035SDF 11H45055SDF 20L45205SDF 28L45205SDF 02D60045SDF 04F60045SDF 08H6005D F H H1L2L2D F HV DC V I FAVM T C =70°CA I FSM1ms T VJM kA 10ms T VJM kA V F0 T VJM r F m ΩT VJM °C R thJC K/kW R thCH K/kW F m kN Housing4500450045004500450045005500550055002800280028002800280028003300330033002754351100157620102750175380585103247587070822405.016.020.023.030.040.03.010.018.02.152.421.752.431.861.353.352.704.502.802.100.880.650.710.387.202.801.3011511512514014014011511511540171286.56.54022128532.533853162040404040162040A/μs 300430600100012001000220340440I rrA 3556101520125024002800300600900di/dt max.IGCT Diodes V Part number V RRM V5SDF 05D25015SDF 03D45015SDF 07H45015SDF 02D6002D D H DV DC V I FAVM T C =85°CA I FSM1ms T VJM kA 10ms T VJM kA V F0 T VJM r F m ΩT VJM °C R thJC K/kW R thCH K/kW F m kN Housing2500450045006000110024002400300049032090025027124011.48.55.016.03.61.402.001.802.500.501.500.902.5012512512512540401240883811114011Q rr μC 900100017002000I rrA 250200260260di/dt=100 A/μsT VJMSnubber Diodes High Power Semiconductors Catalogue | Fast Recovery Diodes 13V Part number ** = V RRM / 100VV RSM V5SDD 10T18005SDD 38F20005SDD 51L28005SDD 60N28005SDD 60Q28005SDD 70H20005SDD 65H24005SDD 11D28005SDD 11T28005SDD 24F28005SDD 48H32005SDD 54N40005SDD 39K40005SDD 40H40005SDD 08D50005SDD 08T50005SDD 20F50005SDD 33L55005SDD 38H50005SDD 36K50005SDD 50N55005SDD 06D60005SDD 09D60005SDD 10F60005SDD 14F60005SDD 17F60005SDD 31H60005SDD 31K6000T1F L1N Q H H D T1F H N K H D T1F L1H K N D D F F F H KI FAVM T C =85°CA I FSM8.3ms T VJMkA 10ms T VJM kA V T0 T VJM R T m ΩT VJM °C R thJC K/kW R thCH K/kW F m kN Housing18002000280028002800200024003000280030003200400040004000500050005000550050005000550060006000600060006000600060001013373053806830738570306520128512852600471052003941384710281028197834803814363845706628451363136317043246309714.436.070.095.095.069.063.016.016.032.065.190.049.049.012.812.825.649.248.148.180.011.211.718.718.720.342.742.713.534.065.087.087.065.059.015.015.030.061.085.046.046.012.012.024.046.045.045.073.010.511.017.517.519.040.040.00.9340.9150.7700.8000.8000.8610.8700.9330.9330.9060.9920.8000.9050.9000.8940.8940.9400.9400.9030.9030.8001.0660.8931.0151.0150.8940.8940.8940.2570.0880.0820.0500.0500.0460.0570.2420.2420.1350.0670.0860.1090.1330.4870.4870.2840.1470.1360.1360.1070.7780.6470.4070.4070.3440.1660.16615019017516016019019016016016016015016016016016016015016016015015015015015015015015038.015.08.05.75.08.08.032.032.015.08.05.79.28.032.032.015.07.08.09.25.742.032.020.020.015.08.09.212.04.03.01.01.02.52.58.08.04.02.51.02.52.58.08.04.01.52.52.51.08.08.05.05.04.02.52.59227090905050101022509050501010227050509011102222225050V RRM V 180020002000200020002000240028002800280032003600400040005000500050005000500050005000600060006000600060006000600014 Standard Recovery Diodes | High Power Semiconductors CatalogueStandard Recovery Diodes-Optimised for line frequency -Low on-state losses-High current handling capabilitiesPlease refer to page 27 for part numbering structure.V Part number ** = V RRM / 100VV RRM V5SDA 11D17025SDA 27F20025SDA 10D23035SDA 24F23035SDA 09D26045SDA 08D32055SDA 21F32045SDA 07D38065SDA 16F38065SDA 06D50075SDA 14F5007D F D F D D F D F D FI FAVM T C =85°CA I FSM 8.3ms T VJM kA 10ms T VJM kA V F0T VJM r F m ΩT VJM °C R thJC K/kW R thCH K/kW F m kN Housing170020002300230026003200320038003800500050001310270011402350102091021107901620690141016.033.114.431.012.39.827.88.121.97.518.715.031.013.529.011.59.226.07.620.57.017.50.740.790.830.840.870.930.891.011.031.101.130.250.090.300.130.390.520.170.720.321.010.441601601601601601601601601601601604020402040402040204020105105101051051051122112211112211221122P RSM 20μs T VJMkW 50100507550507550505050Please refer to page 27 for part numbering structure.High Power Semiconductors Catalogue | Avalanche Diodes 15Avalanche Diodes-Self protected against transient over-voltages -Guaranteed maximum avalanche power dissipationDimensions in mm16 Drawings for Fast & Standard Recovery Diodes and Avalanche Diodes |High Power Semiconductors CataloguePlease refer to page 27 for part numbering structure.Part number V RRM V5SDD 71X02005SDD 71B02005SDD 71X04005SDD 71B04005SDD 0120C02005SDD 0120C04005SDD 92Z04005SDD 0105Z04005SDD 0135Z0400* at 8000 A, T VJM X B X B C C Z1Z2Z3V Fmin VI FAVMT C =85°C A I FSM8.3msT VJMkA 10ms T VJM kA T VJM V F0V T VJM °C R thJC K/kW R thCH K/kW F m kN Housing200200400400200400400400400--0.97--0.83*---71107110711071101100011350925010502135006060606092926475915555555585856070850.740.740.740.740.750.740.780.8120.75817017017017017017018018018010.010.010.010.06.06.05.65.03.95.05.05.05.03.03.03.62.52.6222222223636223035r F m Ω0.0260.0260.0260.0260.0200.0180.0310.0260.021T VJM V Fmax V1.051.051.021.050.92*0.88*1.03*1.01*0.92*T j =25°C,I F =5000 AStandard Part numberV RRMV5SDF 63B04005SDF 63X04005SDF 90Z04005SDF 0102C04005SDF 0103Z04005SDF 0131Z0400* at 8000 A B X Z1C Z2Z3V Fmax V I FAVM T C =85°C A I FSM8.3ms T VJM kA 10ms T VJM kA T VJM V F0V T VJM °C R thJC K/kW R thCH K/kW F m kN Housing4004004004004004001.141.141.131.14*1.20*1.14*4747517558754444487054700.960.960.980.981.000.9819019019019019019010.010.05.66.05.03.95.05.03.63.02.52.6222222353035r F m Ω0.0360.0360.0320.0220.0270.022T VJM 626662669041101591026613058T VJM I F =5000A High Frequency Q rr μC 180180200300230300T VJM Dimensions in mmBC Z1Z2Z3XHigh Power Semiconductors Catalogue | Welding Diodes 17Welding Diodes-Designed for medium and high frequency welding equipment and optimized for high current rectifiers-Proven high reliability in welding applications with very low on-state voltage and very low thermal resistanceV Part number ** = V RRM / 100VV DRM, V RRMV5STP 06T16005STP 10D16015STP 10T16005STP 20F16015STP 20T16005STP 34H16015STP 34T16005STP 07D18005STP 09D18015STP 18F18015STP 18T18005STP 30H18015STP 30T18005STP 50Q18005STP 09D22015STP 17F22015STP 17T22005STP 29H22015STP 29T22005STP 06D28005STP 08D28015STP 08T28005STP 15T28005STP 16F28015STP 27H28015STP 27T28005STP 33L2800T4D T1F T2H T3D D F T2H T3Q D F T2H T3D D T1T2F H T3LI TAVM T C =70°C A I TSM8.3ms T VJM kA 10ms T VJM kA V T0 T VJM r T m ΩT VJM °C R thJC K/kW R thCH K/kW F m kN Housing16001600160016001600160016001800180018001800180018001800220022002200220022002800280028002800280028002800280064196996919011956337033707309321825187031083108610086317021743285528556207927921589155426702670374010.616.016.029.229.252.352.39.514.628.028.050.250.2100.012.827.227.248.148.18.511.311.325.225.245.945.965.09.915.015.027.327.349.049.09.013.726.226.247.047.094.012.025.525.545.045.08.010.610.623.623.643.043.060.00.990.930.930.950.950.940.940.800.940.970.970.980.980.900.980.990.991.001.000.921.061.061.021.021.041.040.950.5030.3020.3020.1520.1520.0660.0660.5400.3410.1700.1700.0810.0810.0500.4140.2060.2060.1070.1070.7800.4920.4920.2650.2650.1270.1270.10012512512512512512512512512512512512512512512512512512512512512512512512512512512544.032.032.016.015.510.010.036.032.016.015.510.010.05.032.016.015.510.010.036.032.032.015.516.010.010.07.012.010.010.04.04.03.03.07.510.04.04.03.03.01.010.04.04.03.03.07.510.010.04.04.03.03.01.591010222250501010222250509010222250501010102222505070T VJM Please refer to page 26 for part numbering structure.Phase Control Power Thyristors-Designed for high power industrial and power transmission applications-Optimized for low on-state voltage drop-Matched Q rr and V T values available for series and/or parallel connections18 Phase Control Thyristors | High Power Semiconductors CatalogueV Part number ** = V RRM / 100VV DRM, V RRMV5STP 45N28005STP 45Q28005STP 04D42005STP 12F42005STP 21H42005STP 28L42005STP 38N42005STP 38Q42005STP 04D52005STP 17H52005STP 25L52005STP 25M52005STP 34N52005STP 34Q52005STP 52U52005STP 03D65005STP 03X65005STP 08F65005STP 08G65005STP 12K65005STP 18M65005STP 26N65005STP 42U65005STP 20N85005STP 20Q8500N Q D F H L N Q D H L M N Q U D X F G K M N U N QI TAVM T C =70°C A I TSM8.3ms T VJM kA 10ms T VJM kA V T0 T VJM r T m ΩT VJM °C R thJC K/kW R thCH K/kW F m kN Housing2800280042004200420042004200420052005200520052005200520052006500650065006500650065006500650080008000508054904701150219231703960427544019752760254036003875512038035083072013701800281042502000215079.079.07.016.034.255.665.065.05.431.0--60.060.090.34.84.812.812.823.435.0-76.138.038.075.075.06.415.032.052.060.060.05.029.055.055.055.055.085.24.54.511.811.821.932.065.071.435.035.00.860.861.000.951.250.970.950.951.201.021.001.001.031.031.041.201.201.241.241.181.201.121.241.251.250.0700.0701.5000.5750.1910.1580.1300.1301.6000.3200.2250.2250.1600.1600.1152.3002.3001.0151.0150.6320.4300.2900.1620.4800.4801251251251251251251251251251251251251251251251251251251251251251251251151155.75.036.017.010.07.05.75.036.010.07.09.05.75.04.036.045.017.022.011.09.05.74.05.75.01.01.07.54.03.01.51.01.07.52.01.51.51.01.00.87.57.54.04.02.01.51.00.81.01.09090102250709090105070709090135101022225070901359090T VJMDimensions in mm. Please refer to page 26 for part numbering structure.High Power Semiconductors Catalogue | Phase Control Thyristors 19Dimensions in mm20 Phase Control Thyristors |High Power Semiconductors CatalogueV Part number V RM V5STB 24N28005STB 24Q28005STB 18N42005STB 17N52005STB 25U52005STB 13N65005STB 18U6500N Q N N U N UI TAVM T C =70°C A I TSM8.3ms T VJM kA 10ms T VJM kA V T0 T VJM r T m ΩT VJM °C R thJC K/kW R thCH K/kW F m kN Housing28002800420052005200650065005400584042604000440031203510243026301920180019801405158046.046.035.031.045.024.031.843.043.032.029.042.022.029.70.850.850.961.021.061.201.200.1600.1600.2850.3200.2190.6000.45812512512512511012511011.410.011.411.48.511.48.52.02.02.02.01.62.01.69090909013590135T VJM I RMS *T C =70°C A * AC full-wavereplaces two replaces two replaces two replaces two replaces two replaces two replaces two5STB 24Q28005STB 24N28005STB 18N42005STB 17N52005STB 13N65005STB 25U52005STB 18U65005STP 24H28005STP 24H28005STP 18H42005STP 17H52005STP 12K65005STP 25L52005STP 18M6500Table of replacement of PCTs by BCTs N Q UDimensions in mmBi-Directionally Controlled ThyristorsPlease refer to page 26 for part numbering structure.-Two anti-parallel thyristors on one Si-wafer -Patented free-floating silicon technology-Designed for high power industrial and energy management applications-Matched Q rr values available for series connectionHigh Power Semiconductors Catalogue | BCTs 21。