晶体管型号2N系列

2n7002工作原理2n7002工作原理引言：2n7002是一种N沟道MOSFET晶体管，具有低电阻、高开关速度、低驱动电压等特点，被广泛应用于各种电子设备中。

本文将详细介绍2n7002的工作原理。

一、MOSFET晶体管概述MOSFET晶体管是金属-氧化物-半导体场效应晶体管（Metal-Oxide-Semiconductor Field Effect Transistor）的简称，是一种常用的功率放大器件。

它由源极、漏极和栅极三个端子组成。

栅极与漏极之间形成一个PN结，称为通道（Channel），控制栅极上的电场可以改变通道中载流子密度，从而改变漏极和源极之间的电阻。

二、2n7002的结构2n7002是一种N沟道MOSFET晶体管，它由漏极、源极和栅极三个端子组成。

其中源极和漏极之间形成一个N型沟道（Channel），当栅极施加正向偏置时，沟道中就会出现大量自由电子，在外加电场作用下从源区向漏区运动，形成导通状态；当栅极施加反向偏置时，沟道中自由电子被排斥到源区，形成截止状态。

三、2n7002的工作原理1.导通状态当栅极施加正向偏置时，栅极和源极之间的电场会将沟道中的自由电子推向漏极，形成导通状态。

此时，漏极和源极之间的电阻很小，可以通过大量电流。

2.截止状态当栅极施加反向偏置时，栅极和源极之间没有足够的电场将自由电子推向漏极，因此沟道中几乎没有自由电子参与导电。

此时，漏极和源极之间的电阻非常大，几乎不会有电流流过。

3.临界区当栅极与源区之间的电压达到一定值时，沟道中出现反型区域（Inversion Layer），这个临界点称为阈值（Threshold Voltage），在这个点附近晶体管处于饱和状态。

此时，虽然还没有完全形成导通通道，但沟道中已经有了一定数量的自由电子参与导通。

四、2n7002的应用1.开关应用：2n7002可以作为开关使用，用于控制电路的通断。

2.放大应用：2n7002还可以作为放大器使用，通过改变栅极电压来调节漏极和源极之间的电阻，实现信号放大。

2n3866参数（实用版）目录1.2n3866 概述2.2n3866 的主要参数3.2n3866 参数的详细说明正文2n3866 是一款常见的电子元器件，广泛应用于各种电子设备中。

了解 2n3866 的参数对于选择和使用该元器件至关重要。

下面我们将详细介绍 2n3866 的主要参数及其含义。

首先，我们来了解一下 2n3866 的基本概述。

2n3866 是一种双极型晶体管，具有放大和开关等功能。

它主要由三个区域组成：n 型区、p 型区和 n 型区，其中两个 n 型区之间夹着一个 p 型区。

这种结构使得2n3866 具有很高的电流放大能力和良好的开关特性。

接下来，我们来看一下 2n3866 的主要参数。

在查阅相关资料时，我们通常会看到以下几个参数：1.集电极电流（IC）：集电极电流是晶体管工作时流经集电极的电流。

它是晶体管的一个重要参数，决定了晶体管的电流放大能力。

2.集电极 - 发射极电压（VCE）：集电极 - 发射极电压是指在晶体管工作时，集电极和发射极之间的电压。

这个参数影响了晶体管的输出特性。

3.发射极电流（IE）：发射极电流是指在晶体管工作时流经发射极的电流。

发射极电流与集电极电流之间有一定的关系，通常用来评价晶体管的电流放大能力。

4.功耗（PD）：功耗是指晶体管在工作过程中消耗的功率。

功耗与晶体管的电流和电压有关，对晶体管的可靠性和稳定性有重要影响。

在了解了 2n3866 的主要参数后，我们还需要对这些参数进行详细说明，以便更好地理解和应用这款元器件。

以下是 2n3866 参数的详细说明：1.集电极电流（IC）：集电极电流是 2n3866 最重要的参数之一。

根据不同的使用场景，我们可以选择具有不同集电极电流的 2n3866。

通常情况下，集电极电流越大，晶体管的电流放大能力越强。

2.集电极 - 发射极电压（VCE）：集电极 - 发射极电压决定了晶体管的开关速度。

在实际应用中，我们需要根据电路的要求选择合适的 VCE 值。

2n7000 (n沟道mosfet) 参数摘要：1.2N7000 MOSFET 的基本参数2.2N7000 MOSFET 的性能特点3.2N7000 MOSFET 的应用领域4.2N7000 MOSFET 的选购建议正文：一、2N7000 MOSFET 的基本参数2N7000 是n 沟道增强型MOSFET（金属- 氧化物- 半导体场效应晶体管）的一种，具有极高的开关速度和低导通电阻。

其基本参数如下：1.型号：2N70002.结构：n 沟道增强型MOSFET3.导通电阻：典型值为70mΩ（最大值为100mΩ）4.断开电压：典型值为0.5V（最大值为1V）5.栅源电压：最大值为20V6.漏源电压：最大值为20V7.源极电流：最大值为1.5A二、2N7000 MOSFET 的性能特点2N7000 MOSFET 具有以下性能特点：1.优秀的导通电阻：2N7000 MOSFET 的导通电阻在典型条件下仅为70mΩ，具有很低的导通电阻，可降低能耗。

2.高开关速度：2N7000 MOSFET 具有很高的开关速度，可实现快速开关，提高电路的工作效率。

3.较低的栅源电压：2N7000 MOSFET 的栅源电压最大值为20V，可降低电路的复杂度。

4.较高的漏源电压：2N7000 MOSFET 的漏源电压最大值为20V，可提高电路的稳定性。

三、2N7000 MOSFET 的应用领域2N7000 MOSFET 广泛应用于各种电子设备和电路，如：1.负荷开关：2N7000 MOSFET 可用于实现负荷开关的功能，可控制电路的通断。

2.脉宽调制：2N7000 MOSFET 可用于实现脉宽调制，可调整信号的脉宽，实现对电路的控制。

3.电源开关：2N7000 MOSFET 可用于实现电源开关的功能，可控制电源的通断。

4.信号处理：2N7000 MOSFET 可用于实现信号处理功能，如信号放大、衰减等。

四、2N7000 MOSFET 的选购建议在选择2N7000 MOSFET 时，应注意以下几点：1.选择正规厂家生产的产品，保证产品的质量和性能。

2N4921G, 2N4922G,2N4923GMedium-Power PlasticNPN Silicon TransistorsThese high−performance plastic devices are designed for driver circuits, switching, and amplifier applications.Features•Low Saturation V oltage•Excellent Power Dissipation•Excellent Safe Operating Area•Complement to PNP 2N4920G•These Devices are Pb−Free and are RoHS Compliant** MAXIMUM RATINGSRating Symbol Value UnitCollector−Emitter Voltage 2N4921G2N4922G2N4923G V CEO406080VdcCollector−Emitter Voltage 2N4921G2N4922G2N4923G V CB406080VdcEmitter Base Voltage V EB 5.0VdcCollector Current − Continuous (Note 1)I C 1.0Adc Collector Current − Peak (Note 1)I CM 3.0Adc Base Current − Continuous I B 1.0AdcTotal Power Dissipation @ T C = 25_C Derate above 25_C PD300.24WmW/_COperating and Storage JunctionTemperature RangeT J, T stg–65 to +150_CStresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.1.The 1.0 A maximum I Cvalue is based upon JEDEC current gain requirements.The 3.0 A maximum value is based upon actual current handling capability of the device (see Figures 5 and 6).THERMAL CHARACTERISTICS (Note 2)Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case R q JC 4.16_C/W 2.Recommend use of thermal compound for lowest thermal resistance.*Indicates JEDEC Registered Data.*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.1.0 AMPEREGENERAL PURPOSEPOWER TRANSISTORS40−80 VOLTS, 30 WATTSMARKING DIAGRAMY=YearWW=Work Week2N492x=Device Codex = 1, 2, or 3G=Pb−Free PackageDevice Package Shipping ORDERING INFORMATION2N4921G TO−225(Pb−Free)500 Units / Box2N4922G TO−225(Pb−Free)500 Units / Box2N4923G TO−225(Pb−Free)500 Units / Box3EMITTERCOLLECTORTO−225CASE 77−09STYLE 13YWW2N492xGELECTRICAL CHARACTERISTICS (T C= 25_C unless otherwise noted)Characteristic Symbol Min Max Unit OFF CHARACTERISTICSCollector−Emitter Sustaining Voltage (Note 3) (I C = 0.1 Adc, I B = 0)2N4921G2N4922G2N4923G V CEO(sus)406080−−−VdcCollector Cutoff Current (V CE = 20 Vdc, I B = 0)2N4921G(V CE = 30 Vdc, I B = 0)2N4922G(V CE = 40 Vdc, I B = 0)2N4923G I CEO−−−0.50.50.5mAdcCollector Cutoff Current(V CE = Rated V CEO, V EB(off) = 1.5 Vdc)(V CE = Rated V CEO, V EB(off) = 1.5 Vdc, T C = 125_C I CEX−−0.10.5mAdcCollector Cutoff Current (V CB = Rated V CB, I E = 0)I CBO−0.1mAdcEmitter Cutoff Current (V EB = 5.0 Vdc, I C = 0)I EBO− 1.0mAdcON CHARACTERISTICSDC Current Gain (Note 3)(I C = 50 mAdc, V CE = 1.0 Vdc) (I C = 500 mAdc, V CE = 1.0 Vdc) (I C = 1.0 Adc, V CE = 1.0 Vdc)h FE403010−150−−Collector−Emitter Saturation Voltage (Note 3) (I C = 1.0 Adc, I B = 0.1 Adc)V CE(sat)−0.6VdcBase−Emitter Saturation Voltage (Note 3) (I C = 1.0 Adc, I B = 0.1 Adc)V BE(sat)− 1.3VdcBase−Emitter On Voltage (Note 3) (I C = 1.0 Adc, V CE = 1.0 Vdc)V BE(on)− 1.3VdcSMALL−SIGNAL CHARACTERISTICSCurrent−Gain − Bandwidth Product(I C = 250 mAdc, V CE = 10 Vdc, f = 1.0 MHz)f T3.0−MHzOutput Capacitance(V CB = 10 Vdc, I E = 0, f = 100 kHz)C ob−100pFSmall−Signal Current Gain(I C = 250 mAdc, V CE = 10 Vdc, f = 1.0 kHz)h fe25−−Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.3.Pulse Test: PW ≈ 300 m s, Duty Cycle ≈ 2.0%.40302010255075100125150Figure 1. Power DeratingT C , CASE TEMPERATURE (°C)P D , P O W E R D I S S I P A T I O N (W A T T S )Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.Figure 2. Switching Time Equivalent Circuit5.0Figure 3. Turn −On TimeI C , COLLECTOR CURRENT (mA)t , T I M E ( s )μ 2.01.00.70.50.30.20.10.052.0%0.073.0V BE(off)V in V TURN-OFF PULSEobtain desired current levelsFigure 4. Thermal Responset, TIME (ms)1.00.010.70.50.30.20.10.070.050.030.02r (t ), T R A N S I E N T T H E R M A LR E S I S T A N C E (N O R M A L I Z E D )10Figure 5. Active −Region Safe Operating AreaV CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)5.02.01.00.50.10.2I C , C O L L E C T O R C U R R E N T (A M P )7.03.00.70.3There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C − V CE operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate.The data of Figure 5 is based on T J(pk) = 150_C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) ≤ 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.t μs , S T O R A G E T I M E ( s )′5.0Figure6. Storage Time I C , COLLECTOR CURRENT (mA)2.01.00.50.30.20.10.050.073.00.75.0Figure 7. Fall TimeI C , COLLECTOR CURRENT (mA)2.01.00.50.30.20.10.050.073.00.7t μf , F A L L T I M E ( s )V C E , C O L L E C T O R -E M I T T E R V O L T A G E (V O L T S )R B E , E X T E R N A L B A S E -E M I T T E R R E S I S T A N C E (O H M S )1000Figure 8. Current GainI C , COLLECTOR CURRENT (mA)1050020010070Figure 9. Collector Saturation Region1.0I B , BASE CURRENT (mA)0.80.60.40.2700300h F E , D C C U R R E N T G A I N503020108Figure 10. Effects of Base −Emitter Resistance T J , JUNCTION TEMPERATURE (°C)1071051041031061.5I C , COLLECTOR CURRENT (mA)1.20.90.60.3V O L T A G E (V O L T S )Figure 11. “On” Voltage104Figure 12. Collector Cut −Off Region V BE , BASE-EMITTER VOLTAGE (VOLTS)10310210-1, C O L L E C T O R C U R R E N T ( A )μI C + 2.5Figure 13. Temperature CoefficientsI C , COLLECTOR CURRENT (mA)T E M P E R A T U R E C O E F F I C I E N T S (m V /C )°+ 2.0+ 1.5+ 0.50- 0.5- 1.0- 1.5- 2.0- 2.5+ 1.010110010- 2TO −225CASE 77−09ISSUE ADDATE 25 MAR 2015STYLE 1:PIN 1.EMITTER 2., 4.COLLECTOR 3.BASE STYLE 6:PIN 1.CATHODE 2., 4.GATE 3.ANODESTYLE 2:PIN 1.CATHODE 2., 4.ANODE 3.GATE STYLE 3:PIN 1.BASE2., 4.COLLECTOR3.EMITTER STYLE 4:PIN 1.ANODE 12., 4.ANODE 23.GATE STYLE 5:PIN 1.MT 12., 4.MT 23.GATE STYLE 7:PIN 1.MT 12., 4.GATE 3.MT 2STYLE 8:PIN 1.SOURCE 2., 4.GATE 3.DRAINSTYLE 9:PIN 1.GATE 2., 4.DRAIN 3.SOURCESTYLE 10:PIN 1.SOURCE 2., 4.DRAIN 3.GATEYWW XXXXXXXGY = Year WW = Work Week XXXXX = Device Code G = Pb −Free Package*This information is generic. Please refer to device data sheet for actual part marking.Pb −Free indicator, “G” or microdot “ G ”,may or may not be present.GENERICMARKING DIAGRAM*SCALE 1:1DIM MIN MAX MILLIMETERS D 10.6011.10E 7.407.80A 2.40 3.00b 0.600.90P 2.90 3.30L1 1.27 2.54c 0.390.63L 14.5016.63b20.510.88Q3.804.20A1 1.00 1.50e 2.04 2.54NOTES:1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.2.CONTROLLING DIMENSION: MILLIMETERS.3.NUMBER AND SHAPE OF LUGS OPTIONAL.FRONT VIEWBACK VIEWFRONT VIEWSIDE VIEW31MECHANICAL CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor theON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.PUBLICATION ORDERING INFORMATIONTECHNICAL SUPPORTNorth American Technical Support:Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910LITERATURE FULFILLMENT :Email Requests to:*******************ON Semiconductor Website: Europe, Middle East and Africa Technical Support:Phone: 00421 33 790 2910For additional information, please contact your local Sales Representative。

2n2222a晶体管参数晶体管是一种集成电路元件，是三极管的一种形式，由一个金属-半导体接口和三个基极组成，它的工作原理是通过改变基极间的电位来控制一个通过源极（位于晶体管的正极处）和汇极（位于晶体管负极处）的电流，从而控制电路的功能，如控制电路的开关和放大电路的信号。

晶体管参数是晶体管的特性，也是影响晶体管性能的主要参数，都包括特性曲线，集电极-基极电压，集电极电流，放大系数，栅极-源极电压，饱和电流，负载电容，暂态参数等。

1、特性曲线：指晶体管特性对电参数的检测图，即放大系数即增益系数(hfe) 的曲线，该曲线可以帮助我们确定放大系数hfe，根据曲线得出的hfe值乘以输入电流即得出输出电流。

2、集电极-基极电压：集电极-基极电压也称为VBE，它是晶体管从关闭到开启的拐点电压，随着其两端的偏置电压的变化而变化，集电极-基极电压的变化可以改变晶体管的开关状态。

3、集电极电流：也称为ICE，它是晶体管要扽开的最小电流，也称为开关电流，晶体管出现漏电现象时，其由基极到集电极的电流在扽内不变。

4、放大系数：也称为hfe，它是晶体管的增益系数，表示晶体管的输出电流与输入电流的比值，通常由特性曲线得出。

5、栅极-源极电压：也称为VGS，它是晶体管的开关电压，晶体管的栅极-源极电压的变化可以改变晶体管的开关状态，当VGS等于一个特定的值时，晶体管即处于打开或关闭状态。

6、饱和电流：也称为ICS，它表示晶体管放大电路最大能够放大的电流，当晶体管在放大电路中工作时，输入电流超过晶体管的饱和电流ICS时，晶体管就会饱和，此时晶体管放大因子会减少，从而使回路稳态响应失效。

7、负载电容：由晶体管放大电路的负载电容对电路的稳态响应有很大的影响，负载电容的值越大，该电路越有可能失效，而负载电容的值越小，该电路就越不容易失效。

8、暂态参数：晶体管的暂态参数包括放大延迟时间、放大脉冲响应时间、放大脉冲环境宽度、放大脉冲幅度和放大脉冲频率，这些参数可以反映晶体管在特定电路条件下的放大特性。

2n5551三极管参数2n5551是一种NPN型三极管，常用于低功耗放大电路和开关电路中。

它具有以下几个主要参数：1. 最大集电极电压（VCEO）：2n5551的最大集电极电压为160V。

这意味着在正常工作条件下，集电极与发射极之间的电压不应超过160V，否则可能会导致器件损坏。

2. 最大集电极电流（IC）：2n5551的最大集电极电流为600mA。

这表示在正常操作下，集电极电流不应超过600mA，否则可能会导致器件过热。

3. 最大发射极-基极电压（VEBO）：2n5551的最大发射极-基极电压为6V。

这意味着在正常工作条件下，发射极与基极之间的电压不应超过6V，否则可能会导致器件损坏。

4. 最大功耗（PD）：2n5551的最大功耗为500mW。

这表示在正常操作下，器件的功耗不应超过500mW，否则可能会导致器件过热。

5. 封装类型：2n5551通常采用TO-92封装，这种封装形式便于焊接和安装。

6. 增益（hFE）：2n5551的直流电流放大倍数（hFE）通常在70至400之间。

这意味着当基极电流为1mA时，集电极电流可能会放大70到400倍。

除了以上主要参数外，2n5551还具有一些其他重要参数，如最大反向漏电流（IR）和最大噪声系数等。

这些参数对于特定应用中的电路设计和性能评估也很重要。

总结起来，2n5551是一种常用的NPN型三极管，具有最大集电极电压160V、最大集电极电流600mA、最大发射极-基极电压6V等参数。

它的特点是功耗低、封装方便，适用于低功耗放大电路和开关电路的设计。

在选择和使用2n5551时，我们应该根据具体的应用需求，合理利用这些参数来确保电路的可靠性和性能。

2n7000场效应管参数2N7000场效应管是一种普遍使用的两极晶体管，它具有很强的性能，能够满足大多数应用场景的需求。

该组件在电子行业中有着广泛的应用，可以满足广域的需求。

本文将针对2N7000场效应管的参数进行简要介绍，以帮助电子工程师理解及使用该组件的一些基本参数。

2N7000场效应管的基本参数，包括静态特性，动态特性和介电特性三个方面。

静态特性使得2N7000场效应管能够在改变电源电压或其他外部因素时，保持其输出电压恒定不变；动态特性是指2N7000场效应管对于外部因素的响应能力，其具备良好的反应性能，可以很好地满足电子产品的设计需求；介电特性指的是2N7000场效应管在高低电压状态下，所具备的介电性能。

从静态特性来看，2N7000场效应管有着良好的稳恒性，其集电极与发射极的压降小于1.4V，集电极与发射极之间的最大电流可以达到200mA，静态电参数的最小值包括：集电极闭合电阻最小值不小于4.0KΩ，发射极闭合电阻最小值不小于75Ω，传输增益最低可以达到60。

动态特性方面，2N7000场效应管具备较强的反应能力，其发射器的最大响应频率可以达到500MHz，放大带宽可以达到600MHz，其反相延迟时间为0.25ns，脉冲响应时间为0.35ns，隔离电阻达到50Ω，反射系数可以达到25dB以上。

介电特性方面，2N7000场效应管所具备的最大电流和最小电流可分别达到200mA和200uA，其耗散系数可达到3500V/μs，其也是保证2N7000场效应管能够适应高压电平情况下使用的一大保障。

从以上参数来看，它们都可以为电子工程师在设计使用2N7000场效应管时提供指导，以便他们能够更好地理解并使用2N7000场效应管，从而实现最佳的设计和使用效果。

总之，2N7000场效应管的参数众多，其丰富的参数特性，为设计电子产品的工程师提供了丰富的可选择性，以满足他们不同的设计和使用需求。

学习理解2N7000场效应管的参数，有助于更好地使用该组件，从而让设计更加精准高效。

2N3771, 2N3772High Power NPN Silicon Power TransistorsThese devices are designed for linear amplifiers, series pass regulators, and inductive switching applications.Features•Forward Biased Second Breakdown Current CapabilityI S/b= 3.75 Adc @ V CE = 40 Vdc − 2N3771= 2.5 Adc @ V CE = 60 Vdc − 2N3772•These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (Note 1)Rating Symbol2N37712N3772Unit Collector−Emitter Voltage V CEO4060Vdc Collector−Emitter Voltage V CEX5080Vdc Collector−Base Voltage V CB50100Vdc Emitter−Base Voltage V EB 5.07.0VdcCollector Current −ContinuousPeak I C30302030AdcBase Current −ContinuousPeak I B7.5155.015AdcT otal Device Dissipation @ T C = 25°C Derate above 25°C P D1500.855WW/°COperating and Storage JunctionTemperature RangeT J, T stg–65 to +200°C THERMAL CHARACTERISTICSCharacteristic Symbol Max Unit Thermal Resistance,Junction−to−Caseq JC 1.17°C/WStresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.1.Indicates JEDEC registered data.20 and 30 AMPEREPOWER TRANSISTORSNPN SILICON40 and 60 VOLTS, 150 WATTSMARKINGDIAGRAMTO−204AA (TO−3)CASE 1−07STYLE 12N377x=Device Codex = 1 or 2G=Pb−Free PackageA=Assembly LocationYY=YearWW=Work WeekMEX=Country of Origin2N377xGAYYWWMEX2N3772G TO−204(Pb−Free)100 Units / Tray Device Package Shipping2N3771G TO−204(Pb−Free)100 Units / Tray ORDERING INFORMATIONELECTRICAL CHARACTERISTICS (T C= 25_C unless otherwise noted)Characteristic Symbol Min Max Unit OFF CHARACTERISTICSCollector−Emitter Sustaining Voltage (Note 2 and 3)2N3771(I C = 0.2 Adc, I B = 0)2N3772V CEO(sus)4060−−VdcCollector−Emitter Sustaining Voltage2N3771(I C = 0.2 Adc, V EB(off) = 1.5 Vdc, R BE = 100 W)2N3772V CEX(sus)5080−−VdcCollector−Emitter Sustaining Voltage2N3771(I C = 0.2 Adc, R BE = 100 W)2N3772V CER(sus)4570−−VdcCollector Cutoff Current (Note 2)(V CE = 30 Vdc, I B = 0)2N3771 (V CE = 50 Vdc, I B = 0)2N3772 (V CE = 25 Vdc, I B = 0)I CEO−−1010mAdcCollector Cutoff Current (Note 2)(V CE = 50 Vdc, V EB(off) = 1.5 Vdc)2N3771 (V CE = 100 Vdc, V EB(off) = 1.5 Vdc)2N3772 (V CE = 45 Vdc, V EB(off) = 1.5 Vdc)2N6257 (V CE = 30 Vdc, V EB(off) = 1.5 Vdc, T C = 150_C)2N37712N3772 (V CE = 45 Vdc, V EB(off) = 1.5 Vdc, T C = 150_C)I CEV−−−−−2.05.04.01010mAdcCollector Cutoff Current (Note 2)(V CB = 50 Vdc, I E = 0)2N3771 (V CB = 100 Vdc, I E = 0)2N3772I CBO−−2.05.0mAdcEmitter Cutoff Current (Note 2)(V BE = 5.0 Vdc, I C = 0)2N3771 (V BE = 7.0 Vdc, I C = 0)2N3772I EBO−−5.05.0mAdcON CHARACTERISTICS (Note 2)DC Current Gain (Note 3)(I C = 15 Adc, V CE = 4.0 Vdc)2N3771(I C = 10 Adc, V CE = 4.0 Vdc)2N3772(I C = 8.0 Adc, V CE = 4.0 Vdc)(I C = 30 Adc, V CE = 4.0 Vdc)2N3771(I C = 20 Adc, V CE = 4.0 Vdc)2N3772h FE15155.05.06060−−−Collector−Emitter Saturation Voltage(I C = 15 Adc, I B = 1.5 Adc)2N3771(I C = 10 Adc, I B = 1.0 Adc)2N3772(I C = 30 Adc, I B = 6.0 Adc)2N3771(I C = 20 Adc, I B = 4.0 Adc)2N3772V CE(sat)−−−−2.01.44.04.0VdcBase−Emitter On Voltage(I C = 15 Adc, V CE = 4.0 Vdc)2N3771(I C = 10 Adc, V CE = 4.0 Vdc)2N3772(I C = 8.0 Adc, V CE = 4.0 Vdc)V BE(on)−−2.72.2Vdc*DYNAMIC CHARACTERISTICS (Note 2)Current−Gain — Bandwidth Product(I C = 1.0 Adc, V CE = 4.0 Vdc, f test = 50 kHz)f T0.2−MHzSmall−Signal Current Gain(I C = 1.0 Adc, V CE = 4.0 Vdc, f = 1.0 kHz)h fe40−−SECOND BREAKDOWNSecond Breakdown Energy with Base Forward Biased, t = 1.0 s (non−repetitive) (V CE = 40 Vdc)2N3771 (V CE = 60 Vdc)2N3772I S/b3.752.5−−Adc2.Indicates JEDEC registered data.3.Pulse Test: 300 m s, Rep. Rate 60 cps.20000255075100125150175200Figure 1. Power DeratingT C , CASE TEMPERATURE (°C)1501005025P D , P O W E R D I S S I P A T I O N (W A T T S )17512575Figure 2. Thermal Response — 2N3771, 2N3772t, TIME (ms)r (t ), E F F E C T I V E T R A N S I E N T T H E R M A L R E S I S T A N C E (N O R M A L I Z E D )40Figure 3. Active −Region Safe Operating Area— 2N3771, 2N3772V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)3020102.07.0I C , C O L L E C T O R C U R R E N T (A M P )5.03.0There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C − V CE limits of the transistor that must be observed for reliable operation: i.e., the transistor must not be subjected to greater dissipation than the curves indicate.Figure 3 is based on JEDEC registered Data. Second breakdown pulse limits are valid for duty cycles to 10%provided T J(pk) < 200_C. T J(pk) may be calculated from the data of Figure 2. Using data of Figure 2 and the pulse power limits of Figure 3, T J(pk) will be found to be less than T J(max)for pulse widths of 1 ms and less. When using ON Semiconductor transistors, it is permissible to increase the pulse power limits until limited by T J(max).Figure 4. Switching Time Test CircuitSCOPEV CC t r , t f ≤ 10 ns DUTY CYCLE = 1.0%D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE I B ≈ 100 mA MSD6100 USED BELOW I B ≈ 100 mAR B AND R C ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS10Figure 5. Turn −On TimeI C , COLLECTOR CURRENT (AMP)5.02.01.00.50.20.10.010.05t , T I M E ( s )μ0.02V C E , C O L L E C T O R -E M I T T E R V O L T A G E (V O L T S )Figure 6. Turn −Off TimeI C , COLLECTOR CURRENT (AMP)t , T I M E ( s )μ2000Figure 7. CapacitanceV R , REVERSE VOLTAGE (VOLTS)200C , C A P A C I T A N C E (p F )1000700500300500Figure 8. DC Current GainI C , COLLECTOR CURRENT (AMP)5.010********h F E , D C C U R R E N T G A I N3007030107.0Figure 9. Collector Saturation RegionI B , BASE CURRENT (AMP)MECHANICAL CASE OUTLINEPACKAGE DIMENSIONSSCALE 1:1CASE 1−07ISSUE Z DATE 05/18/1988 TO−204 (TO−3)NOTES:1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.ALL RULES AND NOTES ASSOCIATED WITHREFERENCED TO-204AA OUTLINE SHALL APPLY.STYLE 1:PIN 1.BASE2.EMITTER CASE:COLLECTOR STYLE 2:PIN 1.BASE2.COLLECTORCASE:EMITTERSTYLE 3:PIN 1.GATE2.SOURCECASE:DRAINSTYLE 4:PIN 1.GROUND2.INPUTCASE:OUTPUTSTYLE 5:PIN 1.CATHODE2.EXTERNAL TRIP/DELAYCASE:ANODESTYLE 6:PIN 1.GATE2.EMITTER CASE:COLLECTOR STYLE 7:PIN 1.ANODE2.OPENCASE:CATHODESTYLE 8:PIN 1.CATHODE #12.CATHODE #2CASE:ANODESTYLE 9:PIN 1.ANODE #12.ANODE #2CASE:CATHODEDIM MIN MAX MIN MAXMILLIMETERSINCHESA 1.550 REF39.37 REFB--- 1.050---26.67C0.2500.335 6.358.51D0.0380.0430.97 1.09E0.0550.070 1.40 1.77G0.430 BSC10.92 BSCH0.215 BSC 5.46 BSCK0.4400.48011.1812.19L0.665 BSC16.89 BSCN---0.830---21.08Q0.1510.165 3.84 4.19U 1.187 BSC30.15 BSCV0.1310.188 3.33 4.77ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.PUBLICATION ORDERING INFORMATIONTECHNICAL SUPPORTNorth American Technical Support:Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910LITERATURE FULFILLMENT :Email Requests to:*******************onsemi Website: Europe, Middle East and Africa Technical Support:Phone: 00421 33 790 2910For additional information, please contact your local Sales Representative。

常用2N系列三极管2N109 GE-P 35V 0.15A 0.165W | 2N1304 GE-N 25V 0.3A 0.15W 10MHz2N1305 GE-P 30V 0.3A 0.15W 5MHz | 2N1307 GE-P 30V 0.3A 0.15W B>602N1613 SI-N 75V 1A 0.8W 60MHz | 2N1711 SI-N 75V 1A 0.8W 70MHz2N1893 SI-N 120V 0.5A 0.8W | 2N2102 SI-N 120V 1A 1W <120MHz2N2148 GE-P 60V 5A 12.5W | 2N2165 SI-P 30V 50mA 0.15W 18MHz2N2166 SI-P 15V 50mA 0.15W 10MHz | 2N2219A SI-N 40V 0.8A 0.8W 250MHz2N2222A SI-N 40V 0.8A 0.5W 300MHz | 2N2223 2xSI-N 100V 0.5A 0.6W >502N2223A 2xSI-N 100V 0.5A 0.6W >50 | 2N2243A SI-N 120V 1A 0.8W 50MHz2N2369A SI-N 40V 0.2A .36W 12/18ns | 2N2857 SI-N 30V 40mA 0.2W >1GHz2N2894 SI-P 12V 0.2A 1.2W 60/90ns | 2N2905A SI-P 60V 0.6A 0.6W 45/1002N2906A SI-P 60V 0.6A 0.4W 45/100 | 2N2907A SI-P 60V 0.6A 0.4W 45/1002N2917 SI-N 45V 0.03A >60Mz | 2N2926 SI-N 25V 0.1A 0.2W 300MHz2N2955 GE-P 40V 0.1A 0.15W 200MHz | 2N3019 SI-N 140V 1A 0.8W 100MHz2N3053 SI-N 60V 0.7A 5W 100MHz | 2N3054 SI-N 90V 4A 25W 3MHz2N3055 SI-N 100V 15A 115W 800kHz | 2N3055 SI-N 100V 15A 115W 800kHz2N3055H SI-N 100V 15A 115W 800kHz | 2N3251 SI-P 50V 0.2A 0.36W2N3375 SI-N 40V 0.5A 11.6W 500MHz | 2N3439 SI-N 450V 1A 10W 15MHz2N3440 SI-N 300V 1A 10W 15MHz | 2N3441 SI-N 160V 3A 25W POWER2N3442 SI-N 160V 10A 117W 0.8MHz | 2N3495 SI-P 120V 0.1A 0.6W >150MHz2N3502 SI-P 45V 0.6A 0.7W 200MHz | 2N3553 SI-N 65V 0.35A 7W 500MHz2N3571 SI-N 30V 0.05A 0.2W 1.4GHz | 2N3583 SI-N 250/175V 2A 35W >10MHz2N3632 SI-N 40V 0.25A 23W 400MHz | 2N3646 SI-N 40V 0.2A 0.2W2N3700 SI-N 140V 1A 0.5W 200MHz | 2N3707 SI-N 30V 0.03A 0.36W 100MHz2N3708 SI-N 30V 0.03A 0.36W 80MHz | 2N3716 SI-N 100V 10A 150W 4MHz2N3725 SI-N 80V 0.5A 1W 35/60ns | 2N3740 SI-P 60V 4A 25W >4MHz2N3741 SI-N 80V 4A 25W >4MHz | 2N3742 SI-N 300V 0.05A 1W >30MHz2N3767 SI-N 100V 4A 20W >10MHz | 2N3771 SI-N 50V 30A 150W POWER2N3772 SI-N 100V 20A 150W POWER | 2N3773 SI-N 160V 16A 150W POWER2N3792 SI-P 80V 10A 150W 4MHz |2N3819 N-FET 25V 20mA 0.36W2N3820 P-FET 20V 15mA 0.36W | 2N3821 N-FET 50V 2.5mA 0.3W2N3824 N-FET 50V 10mA 0.3W <250E | 2N3866 SI-N 55V 0.4A 1W 175MHz2N3904 SI-N 60V 0.2A .35W 300MHz | 2N3906 SI-P 40V 0.2A .35W 250MHz2N3909 P-FET 20V 10MA 0.3W | 2N3958 N-FET 50V 5mA 0.25W2N3963 SI-P 80V 0.2A 0.36W >40MHz | 2N3972 N-FET 40V 50mA 1.8W2N4001 SI-N 100V 1A 15W 40MHz | 2N4033 SI-P 80V 1A 0.8W 150MHz2N4036 SI-P 90V 1A 1W 60MHz | 2N409 GE-P 13V 15mA 80mW 6.8MHz2N4126 SI-P 25V 200mA HF | 2N4220 N-FET 30V 0.2A2N4236 SI-P 80V 3A 1W >3MHz | 2N427 GE-P 30V 0.4A 0.15W B>402N428 GE-P 30V 0.4A 0.15W B>60 | 2N4286 SI-N 30V 0.05A 0.25W2N4287 SI-N 45V 0.1A 0.25W 40MHz | 2N4291 SI-P 40V 0.2A 0.25W 150MH2N4302 N-FET 30V 0.5mA 0.3W | 2N4347 SI-N 140V 5A 100W 0.8MHz2N4348 SI-N 140V 10A 120W >0.2MHz | 2N4351 N-FET 30V 30mA 0.3W 140KHz2N4391 N-FET 40V 50mA 30E Up<10V | 2N4392 N-FET 40V 25mA 60E Up<5V2N4393 N-FET 40V 5mA 100E Up<3V | 2N4401 SI-N 60V 0.6A 200MHz2N4403 SI-P 40V 0.6A 200MHz | 2N4416 N-FET 30V 15mA VHF/UHF2N4420 SI-N 40V 0.2A 0.36W | 2N4427 SI-N 40V 0.4A 1W 175MHz2N4906 SI-P 80V 5A 87.5W >4MHz | 2N4920 SI-P 80V 1A 30W2N4923 SI-N 80V 1A 30W | 2N5038 SI-N 150V 20A 140W 0.5us2N5090 SI-N 55V 0.4A 4W 5mA | 2N5109 SI-N 40V 0.5A 2.5W 1.5GHz2N5116 P-FET 30V 5mA 150E Up<4V | 2N5154 SI-N 100V 2A 10W2N5179 SI-N 20V 50mA 0.2W >1GHz | 2N5192 SI-N 80V 4A 40W 2MHz2N5240 SI-N 375V 5A 100W >2MHz | 2N5298 SI-N 80V 4A 36W >0.8MHz2N5308 N-DARL 40V 0.3A 0.4W B>7K | 2N5320 SI-N 100V 2A 10W AFSWITCH2N5322 SI-P 100V 2A 10W AFSWITCH | 2N5401 SI-P 160V 0.6A 0.31W2N5416 SI-P 350V 1A 10W 15MHz | 2N5433 N-FET 25V 0.4A 0.3W 7E2N5457 N-FET 25V 1mA Up<6V | 2N5458 N-FET 25V 2.9mA UNI2N5460 P-FET 40V 5mA Up<6V GEN.P | 2N5461 P-FET 40V 9mA 0.31W2N5462 P-FET 40V 16mA Up<9V GEN. |2N5484 N-FET 25V 5mA 0.31W2N5485 P-FET 25V 4mA Up<4V | 2N5551 SI-N 180V 0.6A 0.31W VID.2N5589 SI-N 36V 0.6A 3W 175MHz | 2N5639 N-FET 30V 10mA 310mW2N5672 SI-N 150V 30A 140W 0.5us | 2N5680 SI-P 120V 1A 1W2N5682 SI-N 120V 1A 1W >30MHz | 2N5684 SI-P 80V 50A 200W2N5686 SI-N 80V 50A 300W >2MHz | 2N5770 SI-N 30V 0.05A 0.7W >900MHz2N5771 SI-P 15V 50mA 625mW >850MHz | 2N5876 SI-P 80V 10A 150W >4MHz2N5878 SI-N 80V 10A 150W >4MHz | 2N5879 SI-N 60V 10A 150W >4MHz2N5884 SI-P 80V 25A 200W AFPOWSW | 2N5886 SI-N 80V 25A 200W >4MHz2N6031 SI-P 140V 16A 200W 1MHz | 2N6050 P-DARL+D 60V 12A 100W2N6059 SI-N 100V 12A 150W | 2N6083 SI-N 36V 5A PQ=30W 175MHz2N6098 SI-N 70V 10A 75W AFPOWSWITCH | 2N6099 SI-N 70V 10A 75W AFPOWSWITCH2N6109 SI-P 60V 7A 40W 10MHz | 2N6124 SI-P 45V 4A 40W2N6211 SI-P 275V 2A 20W 20MHz | 2N6213 SI-P 400V 2A 35W >20MHz2N6248 SI-P 110V 15A 125W >6MHz | 2N6284 N-DARL 100V 20A 160W B>752N6287 P-DARL 100V 20A 160W | 2N6292 SI-N 80V 7A 40W2N6356 N-DARL 50V 20A 150W B>150 | 2N6422 SI-P 500V 2A 35W >10MHz2N6427 N-DARL 40V 0.5A 0.625W | 2N6476 SI-P 130V 4A 16W 5MHz2N6488 SI-N 90V 15A 75W | 2N6491 SI-P 90V 15A 30W2N6517 SI-N 350V 0.5A 0.625W >40 | 2N6520 SI-P 350V 0.5A 0.625W >402N6547 SI-N 850/400V 15A 175W | 2N6556 SI-P 100V 1A 10W >75MHz2N6609 SI-P 160V 16A 150W 2MHz | 2N6660 N-FET 60V 2A 6.25W 3E2N6661 N-FET 90V 2A 6.2W 4E | 2N6675 SI-N 400V 15A2N6678 SI-N 400V 15A | 2N6716 SI-N 60V 2A 2W 50MHz2N6718 SI-N 100V 2A 2W 50MHz | 2N6725 N-DARL 60V 2A 1W B>15K2N6728 SI-P 60V 2A 2W >50MHz | 2N697 SI-N 60V 1A 0.6W <50MHz2N7002 N-FET 60V 0.115A 0.2W 7E5 | 2N914 SI-N 40V 0.5A <40/40NS SW2N918 SI-N 30V 50mA 0.2W 600MHz | 2SA1006B SI-P 250V 1.5A 25W 80MHz。