STD30NF06中文资料
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1/10March 2002
.STD30NF06
N-CHANNEL 60V - 0.020 Ω - 28A IPAK/DPAK
STripFET™ II POWER MOSFET
s
TYPICAL R
DS(on) = 0.020Ω
sEXCEPTIONAL dv/dt CAPABILITY
s100% AVALANCHE TESTED
sTHROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
sSURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
sHIGH CURRENT, HIGH SWITCHING SPEED
sMOTOR CONTROL , AUDIO AMPLIFIERS
sSOLENOID AND RELAY DRIVERS
sDC-DC & DC-AC CONVERTERSTYPEV
DSSR
DS(on)I
D
STD30NF0660 V<0.028 Ω
28 A
3
2
113
IPAK
TO-251
(Suffix “-1”)DPAK
TO-252
(Suffix “T4”)ABSOLUTE MAXIMUM RATINGS
(•) Pulse width limited by safe operating area.(1) I
SD ≤28A, di/dt ≤300A/µs, V
DD ≤ V
(BR)DSS, T
j ≤
T
JMAX
(2) Starting Tj = 25 oC, ID = 15A, VDD = 30VSymbolParameterValueUnit
V
DSDrain-source Voltage (V
GS = 0)60V
V
DGRDrain-gate Voltage (R
GS = 20 kΩ)60V
V
GSGate- source Voltage± 20V
I
DDrain Current (continuous) at T
C = 25°C28A
I
DDrain Current (continuous) at T
C = 100°C20A
I
DM(•)Drain Current (pulsed)112A
P
totTotal Dissipation at T
C = 25°C70W
Derating Factor0.47W/°C
dv/dt (1)Peak Diode Recovery voltage slope10V/ns
E
AS (2)Single Pulse Avalanche Energy230mJ
T
stgStorage Temperature
-55 to 175°C
T
jMax. Operating Junction TemperatureINTERNAL SCHEMATIC DIAGRAM元器件交易网www.cecb2b.comSTD30NF06
2/10THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
case = 25 °C unless otherwise specified)OFFON (*)
DYNAMICRthj-case
Rthj-amb
T
lThermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering PurposeMaxMax2.14
100
275°C/W
°C/W
°C
SymbolParameterTest ConditionsMin.Typ.Max.Unit
V
(BR)DSSDrain-source
Breakdown VoltageI
D = 250 µA, V
GS = 060V
I
DSSZero Gate Voltage
Drain Current (V
GS = 0)V
DS = Max Rating
V
DS = Max Rating T
C = 100°C1
10µA
µA
I
GSSGate-body Leakage
Current (V
DS = 0)V
GS = ± 20 V±100nA
SymbolParameterTest ConditionsMin.Typ.Max.Unit
V
GS(th)Gate Threshold VoltageV
DS = V
GS I
D = 250 µA24V
R
DS(on)Static Drain-source On
ResistanceV
GS = 10 V I
D = 15 A0.0200.028Ω
SymbolParameterTest ConditionsMin.Typ.Max.Unit
g
fs (*)Forward TransconductanceV
DS = 15 V I
D=15 A40S
C
iss
C
oss
C
rssInput Capacitance
Output Capacitance
Reverse Transfer
CapacitanceV
DS = 25V, f = 1 MHz, V
GS = 01750
220
70pF
pF
pF元器件交易网www.cecb2b.com
3/10STD30NF06
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.SymbolParameterTest ConditionsMin.Typ.Max.Unit
t
d(on)
t
rTurn-on Delay Time
Rise TimeV
DD = 30 V I
D = 19 A
R
G=4.7 Ω V
GS = 10 V
(Resistive Load, Figure 3)20
100ns
ns
Q
g
Q
gs
Q
gdTotal Gate Charge
Gate-Source Charge
Gate-Drain ChargeV
DD = 48V I
D = 38A V
GS= 10V43
9.5
1558nC
nC
nC
SymbolParameterTest ConditionsMin.Typ.Max.Unit
t
d(off)
t
fTurn-off Delay Time
Fall TimeV
DD = 30 V I
D = 19 A
R
G=4.7Ω, V
GS = 10 V
(Resistive Load, Figure 3)50
20ns
ns
SymbolParameterTest ConditionsMin.Typ.Max.Unit
I
SD
I
SDM (•)Source-drain Current
Source-drain Current (pulsed)28
112A
A
V
SD (*)Forward On VoltageI
SD = 28 A V
GS = 01.5V
t
rr
Q
rr
I
RRMReverse Recovery Time
Reverse Recovery Charge
Reverse Recovery CurrentI
SD = 28 Adi/dt = 100A/µs
V
DD = 30 VT
j = 150°C
(see test circuit, Figure 5)95
260
5.5ns
µC
AELECTRICAL CHARACTERISTICS (continued)
Safe Operating AreaThermal Impedance元器件交易网www.cecb2b.com
