FQP8N60C管装 规格书推荐
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FQPF8N60C 2.6 -62.5
Units °C/W °C/W °C/W
©2004 Fairchild Semiconductor Corporation
Rev. B, March 2004
FQP8N60C/FQPF8N60C
Electrical Characteristics
Symbol
Parameter
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
D
!
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G!
●
◀▲
● ●
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
--
--
7.5
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
30
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 7.5 A
--
--
1.4
V
trr
Reverse Recovery Time
Figure 1. On-Region Characteristics
3.5
3.0
2.5
VGS = 10V
2.0
1.5
VGS = 20V
1.0 ※ Note : TJ = 25℃
0.5 0
5
10
15
20
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage
RθJC RθCS RθJA
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient
FQP8N60C 0.85 0.5 62.5
Features
• 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V • Low gate charge ( typical 28 nC) • Low Crss ( typical 12 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
8.7
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
-- 965 1255 pF
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
IDR, Reverse Drain Current [A]
ID, Drain Current [A]
101 150oC
25oC 100
-55oC
10-1 2
※ Notes :
FQP8N60C/FQPF8N60C
FQP8N60C/FQPF8N60C
600V N-Channel MOSFET
QFET®
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
1 10 100 -100
V
V/°C
µA µA nA nA
On Characteristics
VGS(th) Gate Threshold Voltage
--
28
36
nC
VGS = 10 V
-- 4.5
--
nC
(Note 4, 5) --
12
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
1. 2.
2V5D0S µ=
40V s Pulse
Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1 0.2
150℃
25℃
※ Notes :
1. 2.
2V5GS0µ=s0VPulse
Test
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
600 --
∆BVDSS Breakdown Voltage Temperature / ∆TJ Coefficient
2000 1800 1600 1400 1200 1000 800 600 400 200
0 10-1
Ciss Coss Crss
CCCiorssssss===CCCggdsds++CCggdd(Cds = shorted)
※ Notes ;
1. 2.
Vf =GS1=M0HVz
100
101
VDS, Drain-Source Voltage [V]
ID = 250 µA, Referenced to 25°C --
0.7
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C
--
--
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
VDS = 480V 6
4
2
※ Note : ID = 8A
0
0
5
10
15
20
25
30
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Top : 15V.0GSV
10.0 V
101
8.0 V 7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
100
10-1 10-1
※ Notes : 1. 250µs PulseTest 2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300 V, ID = 7.5A, RG = 25 Ω
-- 16.5 45
ห้องสมุดไป่ตู้ns
-- 60.5 130
ns
--
81 170
ns
(Note 4, 5)
--
64.5
140
ns
VDS = 480 V, ID = 7.5A,
