FS50UM-2中文资料

Tch = 25°C
SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 4 3 2
td(off) Tch = 25°C VDD = 50V VGS = 10V RGEN = RGS = 50Ω
104 VGS = 0V
Ciss
103 7 5 3 2 102 7 5 3 2
VGS = 20V 10V 7V 6V TC = 25°C Pulse Test
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 100
VGS = 20V 10V 7V
DRAIN CURRENT ID (A)
80
DRAIN CURRENT ID (A)
Limits Min. 100 — — 2.0 — — — — — — — Typ. — — — 3.0 39 0.98 33 2300 410 185 35 86 100 80 1.0 — 105 Max. — ±0.1 0.1 4.0 55 1.38 — — — — — — — — 1.5 1.78 —
q
TO-220
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg —
(Tch = 25° C)
Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 100V, V GS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 10V ID = 25A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz
4
8
12
16
20
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 100
TC = 25°C VDS = 10V Pulse Test
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
VDS = 10V ID = 1mA
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
4.0
3.0
2.0
1.0
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
40
60
6V
30
40
TC = 25°C Pulse Test 5V PD = 70W
20
5V PD = 70W
20
10
0
0
2
4
6
8
10
0
0
1
2
3
4
5
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
元器件交易网
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
80
20
TC = 25°C 75°C 125°C
0
0
4
8
12
16
20
100 0 10
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2
Unit V µA mA V mΩ V S pF pF pF ns ns ns ns V °C/W ns
Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
Conditions
Ratings 100 ±20 50 200 50 50 200 70 –55 ~ +150 –55 ~ +150 2.0
4.5MAX.
Unit V V A A A A A W °C °C g
Feb.1999
L = 50µH
元器件交易网
MITSUBISHI Nch POWER MOSFET
FS50UM-2
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
101 0 10
2 3 4 5 7 101
2 3 4 5 7 102
DRAIN CURRENT ID (A)
Feb.1999
元器件交易网
MITSUBISHI Nch POWER MOSFET
FS50UM-2
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 100
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
7 f = 1MHZ 5 3 2
Coss Crss
102 7 5 4 3 2
tf tr td(on)
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
TC = 25°C Pulse Test
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ)
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
4
80
3
ID = 80A
60
VGS = 10V
2
50A
40
20V
1
20A
20 0
0
0
Tch = 25°C ID = 50A VGS = 0V Pulse Test
GATE-SOURCE VOLTAGE VGS (V)
20
16
VDS = 20V
SOURCE CURRENT IS (A)
80
12
60
TC = 125°C
8
50V 80V
40
75°C 25°C
4
20
0
0
20
40
60
80
100
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 VDS = 10V 7 Pulse Test 5 4 3 2 101 7 5 4 3 2
DRAIN CURRENT ID (A)
60
40
FORWARD TRANSFER ADMITTANCE yfs (S)
VDD = 50V, ID = 25A, VGS = 10V, RGEN = RGS = 50Ω