C67078-S3113-A2中文资料

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SIPMOS® Power Transistor• N channel• Enhancement mode• Avalanche-ratedType V DS I D R DS(on)Package Ordering Code BUZ 349100 V32 A0.06 ΩTO-218 AA C67078-S3113-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current T C = 27 °C I D32APulsed drain current T C = 25 °C I Dpuls128Avalanche current,limited by T jmax I AR 32Avalanche energy,periodic limited by T jmax E AR 15mJAvalanche energy, single pulseI D = 32 A, V DD = 25 V, R GS = 25 ΩL = 322 µH, T j = 25 °C E AS220Gate source voltage V GS± 20VPower dissipation T C = 25 °C P tot125WOperating temperature T j -55 ... + 150°C Storage temperature T stg -55 ... + 150 Thermal resistance, chip case R thJC ≤ 1K/W Thermal resistance, chip to ambient R thJA 75DIN humidity category, DIN 40 040 EIEC climatic category, DIN IEC 68-1 55 / 150 / 56Electrical Characteristics, at T j = 25°C, unless otherwise specifiedParameter Symbol Values Unitmin.typ.max.Static CharacteristicsDrain- source breakdown voltage V GS = 0 V, I D = 0.25 mA, T j = 25 °C V(BR)DSS100--VGate threshold voltage V GS=V DS, I D = 1 mA V GS(th)2.1 3 4Zero gate voltage drain currentV DS = 100 V, V GS = 0 V, T j = 25 °C V DS = 100 V, V GS = 0 V, T j = 125 °C I DSS--100.11001µAGate-source leakage current V GS = 20 V, V DS = 0 V I GSS- 10 100nADrain-Source on-resistance V GS = 10 V, I D = 21 A R DS(on)- 0.05 0.06ΩElectrical Characteristics, at T j = 25°C, unless otherwise specifiedParameter Symbol Values Unitmin.typ.max. Dynamic CharacteristicsTransconductanceV DS≥ 2 *I D * R DS(on)max, I D = 21 A g fs10 17-SInput capacitanceV GS = 0 V, V DS = 25 V, f = 1 MHz C iss- 1400 1850pFOutput capacitanceV GS = 0 V, V DS = 25 V, f = 1 MHz C oss- 450 700Reverse transfer capacitanceV GS = 0 V, V DS = 25 V, f = 1 MHz C rss- 230 370Turn-on delay timeV DD = 30 V, V GS = 10 V, I D = 3 A R GS = 50 Ωt d(on)- 20 30nsRise timeV DD = 30 V, V GS = 10 V, I D = 3 A R GS = 50 Ωt r- 80 120Turn-off delay timeV DD = 30 V, V GS = 10 V, I D = 3 A R GS = 50 Ωt d(off)- 230 300Fall timeV DD = 30 V, V GS = 10 V, I D = 3 A R GS = 50 Ωt f- 120 160Electrical Characteristics, at T j = 25°C, unless otherwise specifiedParameter Symbol Values Unitmin.typ.max. Reverse DiodeInverse diode continuous forward current T C = 25 °C I S-- 32AInverse diode direct current,pulsed T C = 25 °C I SM-- 128Inverse diode forward voltage V GS = 0 V, I F = 64 A V SD- 1.4 1.7VReverse recovery timeV R = 30 V, I F=l S, d i F/d t = 100 A/µs t rr- 130-nsReverse recovery chargeV R = 30 V, I F=l S, d i F/d t = 100 A/µs Q rr- 0.7-µCDrain current I D = ƒ(T C )parameter: V GS ≥ 10 V20406080100120°C 160T C0 4 8 12 16 20 24 28 A34 IDPower dissipation P tot = ƒ(T C )20406080100120°C160T C0 10 20 30 40 50 60 70 80 90 100 110W 130 P totSafe operating area I D = ƒ(V DS )parameter: D = 0.01, T C = 25°C10 10 10 10 I DV DSTransient thermal impedance Z th JC = ƒ(t p )parameter: D = t p / T10 10 10 10 10 10 10 Z thJC10101010101010 10s t pTyp. output characteristics I D = ƒ(V DS )parameter: t p = 80 µs1234567V 9V DSI DTyp. drain-source on-resistance R DS (on) = ƒ(I D )parameter: V GS1020304050A 70I DR DS (on)Typ. transfer characteristics I D = f (V GS )parameter: t p = 80 µs V DS ≥2 x I D x R DS(on)max12345678V 10V GS0 5 10 15 20 25 30 35 40 45 50 55 60 65A 75 I DTyp. forward transconductance g fs = f (I D )parameter: t p = 80 µs,V DS ≥2 x I D x R DS(on)max1020304050A 70I D0 24 6 8 10 12 14 16 18 S22 g fsGate threshold voltageV GS (th) = ƒ(T j)parameter: V GS = V DS, I D = 1 mAVGS(th)-60-202060100°C160Tj Drain-source on-resistanceR DS (on) = ƒ(T j)parameter: I D = 21 A, V GS = 10 V-60-202060100°C160TjRDS (on)Typ. capacitancesC = f (V DS)parameter:V GS = 0V, f = 1MHz0510********V40VDS10101010CForward characteristics of reverse diodeI F = ƒ(V SD)parameter: T j, t p = 80 µs10101010IF0.00.40.8 1.2 1.6 2.0 2.4V 3.0VSDAvalanche energy E AS = ƒ(T j )parameter: I D = 32 A, V DD = 25 V R GS = 25 Ω, L = 322 µH20406080100120°C160T j0 20 4060 80 100120 140 160180 200mJ240 EASTyp. gate charge V GS = ƒ(Q Gate )parameter: I D puls = 51 A1020304050607080nC 100Q GateV GSDrain-source breakdown voltage V (BR)DSS = ƒ(T j )-60-202060100°C 160T j90 9294 96 98 100 102 104 106 108 110 112 114116V 120 V (BR)DSS。