CY7C1350G-250BGXI中文资料

  • 格式:pdf
  • 大小:336.78 KB
  • 文档页数:15
WE
WRITE REGISTRY AND DATA COHERENCY
CONTROL LOGIC
WRITE DRIVERS
S
E
N
S
E
MEMORY
ARRAY
A
M
P
S
O U T P U T R E G I S T E R S E
D A T A S T E E R I N
O U T P U T
B U F F E R S E
• Internally self-timed output buffer control to eliminate the need to use OE
• Byte Write capability • 128K x 36 common I/O architecture • 3.3V power supply (VDD) • 2.5V/3.3V I/O power supply (VDDQ) • Fast clock-to-output times
CLK CEN
A0, A1, A
MODE C
ADDRESS REGISTER 0
WRITE ADDRESS REGISTER 1
ADV/LD C
A1 D1
Q1 A1'
A0 D0 BURST Q0 A0'
LOGIC
WRITE ADDRESS REGISTER 2
ADV/LD
BWA BWB BWC BWD
Three synchronous Chip Enables (CE1, CE2, CE3) and an asynchronous Output Enable (OE) provide for easy bank selection and output tri-state control. In order to avoid bus contention, the output drivers are synchronously tri-stated during the data portion of a write sequence.
DQB
67
VSS
66
NC
65
VDD
64
ZZ
63
DQA
62
DQA
61
VDDQ
60
VSS
59
DQA
58
DQA
BYTE A
57
DQA
56
DQA
55
VSS
54
VDDQ
53
DQA
52
DQA
51
DQPA
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
MODE 31
A
A
A
A
A
A
A
NC/36M
Byte Write Inputs, active LOW. Qualified with WE to conduct writes to the SRAM. Sampled on the rising edge of CLK.
Write Enable Input, active LOW. Sampled on the rising edge of CLK if CEN is active LOW. This signal must be asserted LOW to initiate a write sequence.
Input-Clock
InputSynchronous
InputSynchronous
InputSynchronous
InputAsynchronous
InputSynchronous
Description
Address Inputs used to select one of the 128K address locations. Sampled at the rising edge of the CLK. A[1:0] are fed to the two-bit burst counter.
200 MHz 2.8 265 40
166 MHz 3.5 240 40
133 MHz 4.0 225 40
100 MHz Unit
4.5
ns
205
mA
40
mA
100-Pin TQFP Pinout
NC/9M
NC/18M
81 A
82 A
85 ADV/LD
86 OE
87 CEN
88 WE
89 CLK
VSS
元器件交易网
CY7C1350G
4-Mbit (128K x 36) Pipelined SRAM with NoBL™ Architecture
Features
Functional Description[1]
• Pin compatible and functionally equivalent to ZBT™ devices
DQD
19
VDDQ
20
VSS
21
DQD
22
BYTE D
DQD DQD
23 24
DQD
25
VSS
26
VDDQ
27
DQD
28
DQD
29
DQPD
30
CY7C1350G
80
DQPB
79
DQB
78
DQB
77
VDDQ
76
VSS
75
DQB
BYTE B
74
DQB
73
DQB
72
DQB
71
VSS
70
VDDQ
69
DQB
68
G
DQs DQPA DQPB DQPC DQPD
INPUT REGISTER 1 E
INPUT REGISTER 0 E
OE CE1 CE2 CE3
ZZ
READ LOGIC
SLEEP CONTROL
Note: 1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on .
VDD
92 CE3
93 BWA
94 BWB
95 BWC
96 BWD
97 CE2
98 CE14
90
91
DQPC
1
DQC
2
DQC
3
VDDQ
4
VSS
5
BYTE C
DQC
6
DQC
7
DQC
8
DQC
9
VSS
10
VDDQ
11
DQC
12
DQC
13
NC
14
VDD
15
NC
16
VSS
17
DQD
18
1
2
3
4
A
VDDQ
A
A
NC/18M
B NC/576M CE2
C NC/1G
A
D
DQC
DQPC
E
DQC
DQC
F
VDDQ
DQC
A
ADV/LD
A
VDD
VSS
NC
VSS
CE1
VSS
OE
G
DQC
DQC
BWC
NC/9M
H
DQC
DQC
VSS
WE
J
VDDQ
VDD
VSS
VDD
K
DQD
DQD
VSS
CLK
L
DQD
DQD
BWD
and non-lead-free 119-Ball BGA package • Burst Capability—linear or interleaved burst order • “ZZ” Sleep mode option
Logic Block Diagram
The CY7C1350G is a 3.3V, 128K x 36 synchronous-pipelined Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1350G is equipped with the advanced No Bus Latency™ (NoBL™) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of the SRAM, especially in systems that require frequent Write/Read transitions.
元器件交易网
Selection Guide
Maximum Access Time Maximum Operating Current Maximum CMOS Standby Current