爱普生晶振XG-2121CA差分晶体振荡器规格书

NTH / NCH SeriesSaRonixCrystal Clock OscillatorTechnical Data3.3V, LVCMOS / HCMOS, Tri-State/saronixDS-159 REV DSymmetry:Rise and Fall Times:Logic 0:Logic 1:Load:Period Jitter RMS:0.5 MHz to 106.25 MHzFrequency Stability:Frequency Range:±20, ±25, ±50 or ±100 ppm over all conditions: calibrationtolerance, operating temperature, input voltage change,load change, 30 day aging, shock and vibration.Temperature Range:Operating:Storage:0 to +70°C or -40 to +85°C, See Part Numbering Guide-55 to +125°CSupply Voltage:Recommended Operating: 3.3V ±10%Supply Current:20mA max, 0.5 to 30 MHz25mA max, 30+ to 50 MHz30mA max, 50+ to 80 MHz35mA max, 80+ to 106.25 MHzACTUAL SIZEDescriptionA crystal controlled, low current, lowjitter and high frequency oscillator withprecise rise and fall times demanded innetworking applications. The tri-statefunction on the NTH enables the outputto go high impedance. Device is pack-aged in a 14 or an 8-pin DIP compatibleresistance welded, all metal groundedcase to reduce EMI. True SMD DIL14versions for IR reflow are available, se-lect option "S" in part number builder.See separate data sheet for SMD packagedimensions.Output Drive:45/55% max 0.5 to 70 MHz max40/60% max @ 50% V DD4ns max 0.5 to 50 MHz, 20% to 80% V DD3ns max 50+ to 80 MHz1.5ns max 80+ to 106.25 MHz10% V DD max90% V DD min50 pF, 0.5 to 50 MHz30pF, 50+ to 70 MHz15pF, 70+ to 106.25 MHz8ps maxHCMOSMechanical:Shock:Solderability:Terminal Strength:Vibration:Solvent Resistance:Resistance to Soldering Heat:MIL-STD-883, Method 2002, Condition BMIL-STD-883, Method 2003MIL-STD-883, Method 2004, Conditions A & CMIL-STD-883, Method 2007, Condition AMIL-STD-202, Method 215MIL-STD-202, Method 210, Condition A, B or CEnvironmental:Gross Leak Test:Fine Leak Test:Thermal Shock:Moisture Resistance:MIL-STD-883, Method 1014, Condition CMIL-STD-883, Method 1014, Condition A2MIL-STD-883, Method 1011, Condition AMIL-STD-883, Method 1004Applications & FeaturesADSL, DSLDS3, ES3, E1, STS-1, T1Ethernet Switch, Gigabit EthernetFibre Channel ControllerMPEGNetwork ProcessorsVoice Over Packet32 Bit MicroprocessorsTri-State output on NTHLVCMOS / HCMOS compatibleAvailable up to 106.25 MHz•••••••••••Output WaveformT r T fCMOSLogic 180% V DD50% V DD20% V DDLogic 0SYMMETRYSaRonixSaRonixSaRonixCrystal Clock Oscillator3.3V, LVCMOS / HCMOS,/saronixSaRonixTrue SMD Adaptor - 7.57mm HighSaRonix /saronix。

Epson晶振选型手册引言概述：Epson晶振选型手册是一本提供关于Epson晶振选型的专业指导手册。

晶振作为一种重要的电子钟振装置，广泛应用于各类电子设备中，对于设备的稳定性和精准性起到关键作用。

本手册将从多个方面介绍Epson晶振的选型原则和方法，以帮助读者准确选型和应用。

正文内容：1. 晶振的基本原理1.1 晶振的作用与功能1.1.1 提供时钟信号1.1.2 稳定电子设备的工作频率1.1.3 控制和同步各设备之间的通信1.1.4 精确计时和定时功能1.2 晶振的工作原理1.2.1 晶体振荡原理1.2.2 纯谐振条件与频率稳定性1.2.3 晶振的构造与材料选择2. Epson晶振的特点与优势2.1 高稳定性和低功耗2.1.1 稳定性与频率偏移2.1.2 低功耗对电池寿命的影响2.2 宽温度范围和长寿命2.2.1 温度对晶振频率的影响2.2.2 长期使用的可靠性和稳定性2.3 大容量和小封装尺寸2.3.1 容量对数据传输速率的影响2.3.2 封装尺寸对电路板设计的要求3. Epson晶振选型原则3.1 需求分析和参数确定3.1.1 设备类型和用途3.1.2 工作频率和精度要求3.1.3 温度范围和环境影响3.2 选择适合的晶振类型3.2.1 晶振频率范围和精度等级3.2.2 温度补偿和温度响应特性3.2.3 封装尺寸和安装要求3.3 参考设计和测试验证3.3.1 参考电路设计3.3.2 振荡电路测试和频率测量3.3.3 选型结果评估和优化4. Epson晶振选型案例分析4.1 移动方式晶振选型4.1.1 高稳定性和小封装尺寸的需求4.1.2 多频段应用的选择考虑4.2 电子表计晶振选型4.2.1 长期使用和温度范围要求4.2.2 低功耗和电池寿命的平衡4.3 工业自动化控制晶振选型4.3.1 高频率和精度要求4.3.2 多通道同步和控制4.3.3 长寿命和可靠性的考虑5. Epson晶振应用注意事项5.1 环境温度和封装要求5.2 抗振动和抗干扰性能5.3 防静电措施和电源干扰5.4 长期使用和老化问题结语：本手册全面介绍了Epson晶振的选型原则和方法，包括晶振的基本原理、Epson晶振的特点与优势、选型原则、案例分析以及应用注意事项。

MC-146晶振
MC-146是日本爱普生株式会社（EPSON）生产的小尺寸贴片32.768kHz时钟晶振。

爱普生株式会社是日本精工-爱普生集团下属子公司，专注于石英晶振、IC等电子元器件和打印耗材、办公用品等生产厂家。

在行业内颇具知名度。

MC-146晶振广泛应用于手机、PHS、PDA、数码相机、GPS模块、FM调谐模块、Zigbee、血糖值测量仪、信用卡结算机、各种微机的预备时钟、无绳电话、移动设备等。

其基本规格如下：
标称频率：32.768kHz
频率偏差：+/-20ppm
负载电容：6PF、7PF、12.5PF
工作温度：-40-+85°C
等效电阻：65KΩmax
MC-146晶振产品特征：
厚度最大为1.4mm的薄型产品
适用于高密度按照及自动化安装SMD型产品
内置了高信赖性、经过光刻加工的圆柱型石英晶振
优良的耐冲击性、耐热性
符合ROHS标准。

MC-146晶振外形尺寸：
长度：7.00mmmax 宽度：1.50mmmax厚度：1.40mm max
上海唐辉电子是日本爱普生株式会社（EPSON）在中国的指定代理商，唐辉电子在PPTC自恢复保险丝、PTC热敏电阻、晶体谐振器、振荡器系列、高品质电容、电感和液晶屏产品、IC 类等领域有很强的竞争力。

产品广泛应用在通信、电脑、消费类电子及网络产品、仪器仪表、工控系统、安防产品、电源供应器等产品上积极面对市场及客户的多方位要求，坚持以最好的品牌和最具竞争力的价格销售电子零件，为客户提供多元化的服务，务求充分满足客户的要求,致力于成为中国乃至世界最佳元器件供应商之一。

KHZSPXOTCO-710x SeriesSG-770/771TCO-708x Series SG-615/531/51 Series SG-645/636 Series SG-310Series SG-550 Series SG-211SxE SG-3030/3040SG-210SxD SG-210SxH SG-150SxE SG-210 SxB MC-306/405/406 MC-30A爱普生压控温补振荡器HG-2150CASeries FC-13A FC-13F/135/255MC-146/156爱普生晶振晶体单元FC-12D/12MC-TYPE/C-2-TYPE/C-4-TYPE串行RX-8581SA/JE/NB RX-8731LC RX-8803SA/LCRX-5412SF RX-8025SA/NB RX-8571SA/NB/LC RX-4575LC RX-4581NB RX-4803SA/LC RX-4571LC/NB/SA RX-4574LC RTC-8564JE/NB/RX-8564LC RX-4045SA/NBRTC-4543SA/SB RTC-4574SA/JE/NB RTC-4701JE/NBRA-4574SA RA-8565SA RA-8581SA 爱普生实时钟模块32.768KHZRA-4565SA音叉型水晶振动子KHKDS表面封装型振水晶振动子MHZUM-5HC-49/UAT-49UM-4AT-38UM-1SMD-49DMX-38DSX840GA DSX840GT DSX151GAL DSX531SDSX630G DSX321SH DSX530GA DSX321G DSX321SL DSX211AL DSX221SHDSX211A DSX221S DSX211G DSX221G KDS晶振DSX1612ADSR221STHKDS振荡器DSA211SCL (VC-TCXO)DSB211SCL (TCXO)DSB211SCB (TCXO)DSA211SDA (VC-TCXO)DSB211SDA (TCXO)DSB211SDB (TCXO)DSA211SDT (VC-TCXO)DSB211SDT (TCXO)DSA222MAA (VC-TCXO)DSA222MAB (VC-TCXO)DSB222MAA (TCXO)DSB222MAB (TCXO)DSA221SCL (VC-TCXO)DSB221SCL (TCXO)DSB221SCB (TCXO)DSA221SDA (VC-TCXO)DSB221SDB (TCXO)DSB221SDA (TCXO)DSA221SDT (VC-TCXO)DSB221SDT (TCXO)DSA221SJ (VC-TCXO)DSB221SJ (TCXO)DSA321SCL (VC-TCXO)DSB321SCL (TCXO)DSV221SR (1.8V動作タイプ)(VCXO)DSV221SV (2.8V/3.3V 動作タイプ) (VCXO)DSV321SR (1.8V動作タイプ) (VCXO)DSV321SV (2.8V/3.3V 動作タイプ) (VCXO)DSV323SD (HCSL出力) (VCXO)DSV323SJ (LVDS出力) (VCXO)DSV323SK (LV-PECL出力) (VCXO)DSV753HJ (LVDS出力) (VCXO)DSV753HK (LV-PECL出力) (VCXO)DSV753SJ (LVDS出力)(VCXO)DSS753SVC(SSXO)CITIZEN晶振西铁城KHZ晶振CFS-206CMR200TCFS-145CMJ206TCFV-206CM250C西铁城MHZ晶振CSA-310CSA-309HCM49CM309SCS325SCSX-750F CSX-750P CSX-750VNX2012SANX3215SAKHZ谐振器音叉晶振RV-2123-C2精工晶振日本NDK晶振振荡器RV-3029-C2-A RV-3029-C2-BRV-3049-C2-A RV-3049-C2-A RV-3049-C2-B 西铁城晶振振荡器瑞士微晶RV-4162-C7RV-8564-C2NX3215SA NX1612AA NX1612AANX2016SA NX2520SA NX3225GANX5032GA NX5032SA NX1255GB NR-2BNR-2C AT-41CD2京瓷晶振KHZ音叉型号频率尺寸ST2012SB 32.768K 2.0 x 1.2 x 0.6ST3215SB 32.768K3.2 x 1.5 x 0.8石英晶体振荡器KC2520B 32.768K 2.5 x 2.0 x 0.7KC2520M 32.768K 2.5 x 2.0 x 0.7温度-40-125°KC3215A32.768K3.2 x 1.5 x 1.0温度补偿水晶振荡器KT3225T 32.768K3.2 x 2.5 x 1.0TCXOCMOS输出类KC2520B-C11.5～1252.5 x 2.0 x 0.7KHZ谐振器M晶体谐振器SPXO钟用晶体振荡器VCXO晶振KC2520B-C2125～160 2.5 x 2.0 x 0.7KC3225A-C21.5～125 3.2 x2.5 x 0.89(K25-2C)KC5032A-CM 1.789～50 5.0 x 3.2 x 1.2KC5032C-C31.8 ～ 170 5.0 x 3.2 x 1.0(K30-3C)KC5032E-C314.31818～166 5.0 x 3.2 x 1.1KC7050A-C21.8～1257.0 x 5.0 x 1.6(K53-2C)石英晶体振荡器(VCXO)KV5032C-C3 1.5～80 5.0 x 3.2 x 1.0KV7050B-C3 1.5～1707.0 x 5.0 x 1.6石英晶体振荡器(TCXO)KT252013～52 2.5 x 2.0 x 0.8max GPS用KT322513～52 3.2 x 2.5 x 1.0max GPS用 台湾晶技（TXC）32.768KHz贴片频率尺寸9HT732.768K 6.9 x 1.4 x 1.30mm9HT932.768K 4.1 x 1.5 x 0.80mm9HT1032.768K 3.2 x 1.5 x 0.75mm9HT1132.768K 2.0 x 1.2 x 0.60mmMHZ9B 3.2 ~ 90MHz11.5 x 5.0 x 3.68mm49/S9C 3.2 ~ 90MHz12.7 x 4.8 x 3.80mm49/SMD 7A8 ~ 80MHz 5.0 x 3.2 x 1.20mm黑色面7B8 ~ 100MHz 5.0 x 3.2 x 0.90mm7M10 ~ 54MHz 3.2 x 2.5 x 0.70mmAV9.9 ~ 54MHz 3.2 x 2.5 x 0.80mm黑色面8Z12 ~ 54MHz 2.5 x 2.0 x 0.55mm石英振荡器7W 1 ~ 170MHz7 x 5 x 1.3mm7C 1 ~ 150MHz 5 x 3.2 x 1.2mm7X 1 ~ 125MHz 3.2 x 2.5 x 1mm8W 4 ~ 54MHz 2.5 x 2 x 0.8mmVCXO 压控振荡器BK60 ~ 700MHz7 x 5 x 1.3mmCJ60 ~ 200MHz 5 x 3.2 x 1.2mmTCXO 温补振荡器7Q13 ~ 52MHz 3.2 x 2.5 x 1mm7L13 ~ 52MHz 2.5 x 2 x 0.8mmNDK（日本电波工业株式会社）晶体谐振器频率尺寸NX2520SG19.2-54MHZ 2.5*2.0*0.9NX3215SA32.768KHZ 3.2*1.5*0.8NX2520SA16-80MHZ 2.5*2.0*0.5NX3225SA12-150MHZ 3.2*2.5*0.55NX3225GA9.840-50MHZ 3.2*2.5*0.75NX5032GB12-55MHZ 5.0*3.2*1.0NX5032GA8-55MHZ 5.0*3.2*1.3NX5032SD9.75-40MHZ 4.9*3.1*0.9AT-41 3.1375-74.1MHZ11.05*4.7*3.6849/S AT-41CD2 3.1375-74.1MHZ11.4*4.8*4.049/SMD晶体振荡器（SPXO）NZ2520SB 1.5 to 80 2.5×2.0×0.9 NZ2520SB 32.768KHZ 2.5×2.0×0.9 2725N 2.5 to 70 5.0×3.2×1.0 2725T 2.5 to 125 5.0×3.2×1.0 7311S-GF-505P62.5-313MHZ7.0*5.0*1.7温补振荡器（TCXO）NT2520SB13.-52MHZ 2.5*2.0*0.9NT3225SA10-40MHZ 3.2*2.5*1.0NT7050BC19.2-26MHZ7.0*5.0*2.0压控振荡器（VCXO）NV2520SA 1.25-80MHZ 2.5*2.0*0.9 NV3225SA 1.25-80MHZ 3.2*2.5*0.9 NV5032SA38.4-52MHZ 5.0*3.2*1.2 NV7050SA 2.048-700MHZ7.0*5.0*1.6晶体滤波器21E15AB21.4MHZ7.0*5.0*1.35 台湾鸿星（HOSONIC)晶体谐振器频率尺寸2SB12~54MHz 2.5*2.0*0.55mm 3SB12~54MHz 3.2*2.5*0.65mm 5SB10~80MHz 5.0*3.2*0.80mm 6SB8~80MHz 6.0*3.5*1.0mm 7SB6~100MHz7.0*5.0*1.1mm 3FB12~54MHz 3.2*2.5*0.80mm5FA10~80MHz 5.0*3.2*1.20mm黑色面两个脚8FA6~80MHz8.0*4.5*1.60mmHC-49SA 3.2~66MHz11.05*4.65*3.50mmHC-49SB8~66MHz11.05*4.65*2.5mmHC-49SMB8~66MHz12.9*4.7*3.2mmHC-49SMA 3.2~66MHz12.9*4.7*4.2mmDT-2630~100KHzDT-3830~100KHz石英振荡器HXO-31~133MHz7.0*5.0*1.5mmHXO-51~133MHz 5.0*3.2*1.3mmHXO-S1~54MHz 3.2*2.5*1.2mmHXO-N1~54MHz 2.5*2.0*0.9mm台湾希华晶振（SIWARD）晶体谐振器频率尺寸LP-2.5 3.5 ~ 80 MHz11.05 x 4.65 x H49/SLP-3.5 3.5 ~ 80 MHz11.05 x 4.65 x HLP-3.5S 3.5 ~ 80 MHz12.3 x 4.7 x H49/SMDLP-4.2S 3.5 ~ 80 MHz12.3 x 4.7 x HSX-252012 ~ 66 MHz 2.5 x 2.0 x 0.55SX-322510 ~ 125 MHz 3.2 x 2.5 x 0.8SX-50328 ~ 100 MHz 5.0 x 3.2 x 0.7SX-60358 ~ 50 MHz 6.0 x 3.5 x 1.0SX-7050 6 ~ 100 MHz7.0 x 5.0 x 1.1GX-3225410 ~ 54 MHz 3.2 x 2.5 x 0.8黑色面四脚GX-503228 ~ 60 MHz 5.0 x 3.2 x 1.1黑色面两脚和四脚GX-50324GX-603528 ~ 60 MHz 6.0 x 3.5 x 1.1黑色面两脚和四脚GX-60354GX-705026 ~ 70 MHz7.0 x 5.0 x 1.4黑色面两脚和四脚GX-70504石英振荡器SHO-3225 2.5 ~ 60 MHz 3.2 x 2.5 x 0.9OSC73 2.5 ~ 60 MHz 5.0 x 3.2 x 1.05OSC57A40 ~ 160 MHz7.0 x 5.0 x 1.5SPO-2520B 1 ~ 200 MHz 2.5x2.0x0.8SPO-3225B 1 ~ 200 MHz 3.2x2.5x0.9SPO-5032B 1 ~ 200 MHz 5.0x3.2x0.9SPO-7050B 1 ~ 200 MHz7.0x5.0x1.4温补振荡器（TCXO）TXO928 ~ 45 MHz 3.2 x 2.5 x 0.9TXO83 6 ~ 45 MHz 5.0 x 3.2 x 1.05STO-2520B0.675 ~ 55 MHz 2.5 x 2.0 x 0.9STO-3225B0.675 ~ 55 MHz 3.2 x 2.5 x 1.0STO-5032B0.675 ~ 55 MHz 5.0 x 3.2 x 1.05STO-7050B0.675 ~ 55 MHz7.0 x 5.0 x 1.4STO-2520A16.368 ~ 38.4 MHz 2.5x2.0x0.8STO-3225A16.368 ~ 27.456 MHz 3.2x2.5x1.0压控温补振荡器（VC-TCXO）VTX7110 ~ 26 MHz7.0 x5.0 x 1.6VTX928 ~ 45 MHz 3.2 x 2.5 x 0.9VTX83 6 ~ 45 MHz 5.0 x 3.2 x 1.05压控振荡器（VCXO）SCV-3225 1.5 ~ 54 MHz 3.2 x 2.5 x 0.9VCX95 1.5 ~ 61.440 MHz 5.0 x 3.2 x 1.1VCX91 1.5 ~ 54 MHz7.0 x 5.0 x 1.6台湾嘉碩（TST）型号频率尺寸TZ0507A32.768K 4.1x1.5x0.25TZ0601A32.768K7.0x1.5x1.4TZ0756A32.768K 6.5x2.0TZ0824A32.768K 4.1x1.5x0.7TZ0853A32.768K8.0x3.8x2.5TZ1006A32.768K 3.2x1.5TZ1021A32.768K 5.2x1.5TZ1692A32.768K 4.9x1.8x1.0TZ2426A32.768K 6.0x2.0TZ2430A 3.997 HC49UTZ0694A4HC49-SMD 以下嘉碩型号 每一个频率都有不同的型号.太多了,只写了几个TZ0195A6M7.0x5.0x1.1TZ0777A8M 5.0x3.2x1.0TZ0994A8M 6.0x3.5x1.1TZ0419A11.0592 MHZ 4.0x2.5x0.8TZ0481A12MHZ 3.2x2.5x0.7石英振荡器TW0357A32.768KHZ 3.2x2.5x1.2TW0190A6MHZ 3.2x2.5x1.2TW0280A10MHZ 5.0x3.2x1.3TW0229A12.288MHZ7.0x5.0x1.9TW0160A13MHZ 5.0x3.2x1.3TW0135A13.5 5.0x3.2x1.2TW0149A14.318184 5.0x3.2x1.3TW0277A16MHZ 3.2x2.5x1.2TW0286A16MHZ7.0x5.0x1.9压控温补振荡器（VC-TCXO）TX0329A10MHZ 3.2x2.5x1.2TX0173A12MHZ 5.0x3.2x1.2台湾加高晶振（HELE）型号频率尺寸HSX221SR 2.55x2.05x0.95HSX221SA 2.50x2.00x0.50HSX321S 3.20x2.50x0.65HSX421S 4.00x2.50x0.65HSX531S 5.00x3.20x0.75HSX321G 3.20x2.50x0.75HSX530G 5.00x3.20x1.402个脚HSX630G 6.00x3.50x1.202个脚HSX840G8.00x4.50x1.402个脚SMD-4912.10x4.75x4.5049/SMDAT-4911.50x5.00x3.5049/S台湾泰艺（TAITIEN）晶体谐振器 型号频率尺寸XY16~54MHz 2.5 x 2.0XX12~54MHz 3.2 x 2.5XV11~80MHz 5.0 x 3.2X212~48MHz 3.2 x 2.5黑色面XS10~50MHz 5.0 x 3.22脚黑色面XR8~49MHz 6.0 x 3.5XQ7.3728~70MHz8.0 x 4.5XI 3.5~80MHz10.8 x 4.549/SXJ 3.5~80MHz12.5 x 4.5XD32.768KHz 3.2 x 1.5石英振荡器OT HCSL90~125MHz7.0 x 5.0OW80~320MHz 5.0 x 3.2OY1~50MHz 2.5 x 2.0OX32.768KHz ~ 125MHz 3.2 x 2.5PX1~200MHz 3.2 x 2.5OV13.7KHz ~ 125MHz 5.0 x 3.2OC13.7KHz ~ 166MHz7.0 x 5.0OC-M1~200MHz7.0 x 5.0压控振荡器（VCXO）VW CMOS 1.5~80MHz 5.0 x 3.2VT CMOS 1.5~200MHz7.0 x 5.0VT-M CMOS60~200MHz7.0 x 5.0温补振荡器（TCXO）TY13~52MHz 2.5 x 2.0TX13~52MHz 3.2 x 2.5TV10~40MHz 5.0 x 3.2TW 5.0 x 3.210~40MHzTS / TC7.0 x 5.05~40MHzSMI振荡器型号频率尺寸压电晶体谐振器22SMX16.000 MHz to 80.000 MHz2.5*2.032SMX(A)12.000 MHz to 67.500 MHz3.2*2.532SMX(B)16.000 MHz to 50.000 MHz3.2*2.5黑色面42SMX12.000 MHz to 50.000 MHz4.0*2.553SMX(B)10.000 MHz to 270.000 MHz5.0*3.253SMX(C)8.000 MHz to 55.000 MHz5.0*3.2黑色两脚53SMX(D)10.000 MHz to 50.000 MHz5.0*3.2黑色四脚53SMX(E)10.000 MHz to 50.000 MHz5.0*3.2金属面两脚97SMX(A)9.000 MHz to 150.000 MHz6.0*3.5金属面2脚97SMX(B)8.000 MHz to 50.000 MHz6.0*3.5黑色面4脚97SMX(C)8.000 MHz to 50.000 MHz6.0*3.5黑色面2脚94SMX(C) 6.000 MHz to 160.000 MHz5.0*7.0黑色面4脚压电晶体振荡器32SMOP 1.000 MHz to 125.000 MHz3.2*2.599SMOP 1.000 MHz to 181.000 MHz5.0*3.291SMOP 1.000 MHz to 200.000 MHz5.0*7.0黑色面4脚97SMO(K) 1.000 MHz to 166.000 MHz5.0*7.032SMOHG500.000 kHz to 45.000 MHz3.2*2.557SMO40.000 MHz to 300.000 MHz5.0*7.0327SMO(B)32.768 kHz 4.0*2.5压控振荡器（VCXO）32SMOV(M) 2.000 MHz to 54.000 MHz3.2*2.532SMOV(S) 2.000 MHz to 54.000 MHz3.2*2.599SMOV 2.000 MHz to 54.000 MHz5.0*3.297SMOVH 2.000 MHz to 80.000 MHz5.0*7.097SMOV 2.000 MHz to 54.000 MHz5.0*7.0温补振荡器（TCXO）SXO-3200V10.000 MHz to 40.000 MHz3.2*2.5SXO-5200V 5.000 MHz to 45.000 MHz5.0*3.2SXO-7100AV(B)10.000 MHz to 26.000 MHz5.0*7.0大河晶振石英晶体谐振器 型号频率尺寸FCX-06 2.0x1.6x0.5mmFCX-05 2.5x2.0x0.6mmFCX-04C 3.2x2.5x0.7mmFCX-04 3.2x2.5x0.9mmFCX-03 5.0x3.2x1.5mmHC-49/U03C11.4x4.8x4.5mm49/SMD HC-49/U0310.3x5.0x3.6mm石英振荡器FCXO-05 2.5x2.0x0.9mmFCXO-03L 5.0x3.2x1.2mm FCXO-75HC7.0x5.0x2.0mmCTS（西迪斯电子）Model 44312 - 48 3.2 x 2.5 x 0.90 mmModel 44510 - 50 5.0 x 3.2 x 1.35mm TF32 Series32.7680 kHz 3.2 x 1.5 x 0.80 mm 16 - 542.5 x 2.0 x 0.65 mm12 - 50 3.2 x 2.5 x 0.80 mmModel 40512 - 50 5.0 x 3.2 x 0.9 mm Model 40610 - 50 6 x 3.5 x 1.20 mm Model 4078 - 507.0 x 5.0 x 1.20 mm ATS-SM Series 3.2 - 6412.30 x 4.83 x 4.30 mm49/SMDATSSM4P Series 3.2 - 6413.00 x 4.85 x 5.20mmATS Series 3.2 - 6410.85 x 4.50 x 3.68 mm时钟振荡器Model 632 1.0 - 75 3.2 x 2.5 x 1.2 mm Model 636 1.0 - 1255.0 x 3.2 x 1.3 mmCB3CB3LV1.5 - 1607.0 x 5.0 x 1.8 mmCB1V81.0 - 707.0 x 5.0 x 1.8 mmModel 425Model 403MHZ可编程低抖动声表面波VCXO/VCSOTCXOTG-5035CJTG-5035CE XG-1000CA/CB TG-5035CG XG-2121/2102CATG-5021CGEG-2121/2102CB TG-5031CJ EG-41xxCA Series TG-3530SA EG-2101CA TG-5021CEEG-2121/2102CA VG-4512CAEG-2002CA EG-2021/2001CAVG-4231/4232CA VG-4501/4502CA EA-2102CB VG-4231CBSG-8003 Series VG-4231CESG-WriterMA-306 MA-406/505/506器EV-9100JG SG-8002 Series FA-118TFA-20HFA-238V/238/TSX-3225 体单元/谐振器CA-301 FA-128RTC-72421/72423RTC-7301SF/DG应用手册RX-8564LCRX-8581SA/JE/NBRTC-62421/62423RX-4575LCRX-4581NBRX-8025SA/NBRX-4571SA TSU SeriesRX-4574LC XP-7000 Series RX-4574SG晶体压力传感器XV-8000CB/LK RX-4571LC XV-8100CB RX-4571NB 爱普生传感器XV-3500CB RTC-9701JE XV-3700CB RX-4045SA/NB FF-555RTC-4574SA/JE/N RTC-4701JE/NB AH-6120LR/AP-6110LR RTC-8564JE/NB 爱普生滤波器sheet RTC-7301SF/DG RA-8565SA RA-8581SA FF-32N RTC-4543SA/SB 并行RTC-72421/72423 RA-4574SA水晶MHZ 水晶振动子KHZ DSO531SRDSX221G DSO751SR DSR221STHDSO321SWDSX211G DSO321SRDSR221STH DSO221SWUM-5J DSA321SF (VC-TCXO)UM-5DSO213AWDSF753SAF DSO221SRDSF753SCF DT-381HC-49/T DSF444SAF DSO211ARDSF444SAO DT-261DSF753SDF DT-38UM-4DMX-38DSF444SCO DT-26DSF753SBF DMX-26SDSF334SAO DMX-26DSF334SCF SM-14JUM-1SM-26FHC-49/TS DST520DSF753SAO DST621DSF753SCO DST310SDSF334SAF DST410SDSF444SCF 晶振DST210ADSF223SAFDSB321SF (TCXO)DSX321GDSB321SCB (TCXO)DSO321SN (SPXO)DSA321SDA (VC-TCXO)DSO321SR (SPXO)DSB321SDA (TCXO)DSO321SW (SPXO)DSB321SDB (TCXO)DSO323SD (HCSL出力)(SPXO)DSA535SC (VC-TCXO)DSO323SJ (LVDS出力)(SPXO)DSB535SC (TCXO)DSO323SK (LV-PECL出力)(SPXO)DSA535SD (VC-TCXO)DSO531SBM (SPXO)DSB535SD (TCXO)DSO531SBN (SPXO)DSA535SG (VC-TCXO)DSO531SVN (SPXO)DSB535SG (TCXO)DSO531SR (SPXO)DSG211STA (TSXO)DSO533SJ (LVDS出力) (SPXO)DSG221STA (TSXO)DSO533SK (LV-PECL出力) (SPXODSO211AR (SPXO)DSO751SBM (SPXO)DSO211AH (SPXO)DSO751SVN (SPXO)DSO213AW (SPXO)DSO751SBN (SPXO)DSO221SBM (SPXO)DSO751SR (SPXO)DSO221SH (SPXO)DSO753HJ (LVDS出力) (SPXO)DSO221SN (SPXO)DSO753HK (LV-PECL出力) (SPXODSO221SR (SPXO)DSO753HV (SPXO)DSO221SW (SPXO)DSO753SD (HCSL出力) (SPXO)DSO321SBM (SPXO)DSO753SJ (LVDS出力) (SPXO)DSO321SBN (SPXO)DSO753SK (LV-PECL出力) (SPXOCM200C CM315 CM519CM212 CM415HC-49 / U-SCS325DSV753SK (LV-PECL出力)(VCXO) DSV753SV (VCXO)DSS753SVD (SSXO)DSV753HV (VCXO)DSV753SB (VCXO)DSV753SD (HCSL出力)(VCXO) DSV531SV (VCXO)DSV532SB (VCXO)DSV532SV (VCXO)DSO321SH (SPXO)DSV211AV (2.8V/3.3V 動作タイDSV323SV (VCXO)DSV531SB (VCXO)DSO321SVN (SPXO)DSV211AR (1.8V動作タイプ)(VC微晶10KHZ-2100KHZCC7V-T1ACC4V-T1ASSP-T7-FL VT-150-FVT-200-FL VT-120-FSSP-T7-F VTC-120-FVT-200-F SSP-T2A-FNZ2016SA7311S-GF-505P NH21M13LANZ2016SF 7311S-DF-505P9325DSPXO振荡器NZ2520SB7311S-DF-104P NH25M22WC NZ2520SD7311S-GF-255R NH20M20LA NZ2520SFNH25M22WB NZ2520SGNT2016SA 2725NNT2520SA 10T7.5BH 2735NNT3225SA 21E15AA 2725T5925A-AQP50 90E9A 2765E5936L-GJD70 YF10.0BP NV11M09YANW36M25LA AF10-24DS NV7050SANW34M25WA 70NE15B 7311QNW19M12WA 45SC15BENV13M09WJ NW19M12WB 度-40-125°OCXO晶振晶体滤波器SPXO振荡器TCXO振荡器FCXO晶振和四脚色面两脚和四脚色面两脚和四脚FS-585NS-21RNS-32R/FS-335/555晶振滤波器/SB/JE/NB /NB/NB NBNBJE/NB 62423 72423 /DGO)O) SPXO)XO) (SPXO)XO) (SPXO)XO) XO) (SPXO)プ)(VCXO)作タイプ)(VCXO)O)VCXO)WXB55Z1486FE WF871Q0429CD声表滤波WF995D0355CDWFB40D1732CE。

REV DESCRIPTION DATEPREPAPPDG EC20973 7/10/23SMLT/AJOscillator Specification, Hybrid VCXOACMOS, 9x14 mm, J-Lead MOUNT HOLLY SPRINGS, PA 17065 Hi-Rel Standard THE RECORD OF APPROVAL FOR THISDOCUMENT IS MAINTAINED ELECTRONICALLYCODE IDENT NO SIZE DWG. NO.REV1. SCOPE1.1General. This specification defines the design, assembly, and functional evaluation of highreliability, VCXO’s produced by Vectron. Devices delivered to this specification represent the standardized Parts, Materials and Processes (PMP) Program developed, implemented, andcertified for advanced applications and extended environments.1.2Applications Overview. The designs represented by these products were primarily developedfor the MIL-Aerospace community. The lesser Design Pedigrees and Screening Optionsimbedded within DOC206218 bridge the gap between Space and COTS hardware by providing custom hardware with measures of mechanical, assembly and reliability assurance needed for Military or Ruggedized COTS environments.2.APPLICABLE DOCUMENTS2.1Specifications and Standards. The following specifications and standards form a part of thisdocument to the extent specified herein. The issue currently in effect on the date of quotation will be the product baseline, unless otherwise specified. In the event of conflict between thetexts of any references cited herein, the text of this document shall take precedence.MilitaryControlled, General Specification For MIL-PRF-55310 Oscillators,CrystalMicrocircuits, General Specification ForMIL-PRF-38534 HybridStandardsMIL-STD-202 Test Method Standard, Electronic and Electrical Component PartsMIL-STD-883 Test Methods and Procedures for MicroelectronicsOtherDOC206251 Test Specification, DOC206218 Hybrids, Hi-Rel StandardQSP-90100 Quality Systems Manual, VectronDocuments,Materials and Processes, Hi-Rel XOCommonDOC011627 IdentificationSpecificationDOC203982 DPAElectrostatic Discharge PrecautionsforQSP-91502 ProcedureDOC208191 Enhanced Element Evaluation for Space Level Hybrid OscillatorsDOC220429 Packaging Standards, Hi-Rel SeriesREQUIREMENTS3. GENERAL3.1 Classification. All devices delivered to this specification are of hybrid technology conformingto Type 2, Class 2 of MIL-PRF-55310. Primarily developed as a Class S equivalentspecification, options are imbedded within it to also produce Class B, Engineering Model and Ruggedized COTS devices. Devices carry a Class 2 ESDS classification per MIL-PRF-38534.3.2 Item Identification. See paragraph 7.1 for part number configuration.3.3 Absolute Maximum Ratings.a. Supply Voltage Range (V CC): -0.5Vdc to +7.0Vdcb. Storage Temperature Range (T STG): -65°C to +125°Cc. Junction Temperature (T J): +175°Cd. Lead Temperature (soldering, 10 seconds): +300°Ce. Output Source/Sink Current: ±70 mA3.4 Design, Parts, Materials and Processes, Assembly, Inspection and Test.3.4.1 Design. The ruggedized designs implemented for these devices are proven in military andspace applications under extreme environments. The design utilizes a 4-point crystal mount in compliment with Established Reliability (MIL-ER) componentry. When specified, radiationtolerant active devices up to 100krad(Si) (RHA level R) can be included without altering thedevice’s internal topography.3.4.1.1 Design and Configuration Stability. Barring changes to improve performance by reselectingpassive chip component values to offset component tolerances, there will not be fundamental changes to the design or assembly or parts, materials, and processes after first product delivery of that item without notification.3.4.1.2 Environmental Integrity. Designs have passed the environmental qualification levels of MIL-PRF-55310.3.4.2 Prohibited Parts, Materials and Processes. The items listed are prohibited for use in highreliability devices produced to this specification.a. Gold metallization of package elements without a barrier metal.b. Zinc chromate as a finish.c. Cadmium, zinc, or pure tin external or internal to the device.d. Plastic encapsulated semiconductor devices.e. Ultrasonically cleaned electronic parts.f. Heterojunction Bipolar Transistor (HBT) technology.g. ‘getter’ materials3.4.3 Assembly. Manufacturing utilizes standardized procedures, processes, and verificationmethods to produce MIL-PRF-55310 Class S / MIL-PRF-38534 Class K equivalent devices.MIL-PRF-38534 Group B Option 1 in-line inspection is included on radiation hardened partnumbers to further verify lot pedigree. Devices are handled in accordance with Vectrondocument QSP-91502 (Procedure for Electrostatic Discharge Precautions). Elementreplacement will be as specified in MIL-PRF-38534, Rev L.3.4.4 Inspection. The inspection requirements of MIL-PRF-55310 apply to all devices delivered tothis document. Inspection conditions and standards are documented in accordance with theQuality Assurance, ISO-9001 and AS9100 derived, System of QSP-90100.3.4.5 Test. The Screening test matrix of Table 4 is tailored for selectable-combination testing toeliminate costs associated with the development/maintenance of device-specific documentation packages while maintaining performance integrity.3.4.6 Marking. Device marking shall be in accordance with the requirements of MIL-PRF-55310. Inaddition, when devices are identified with laser marking, the Resistance to Solvents testspecified in MIL-PRF-55310 Group C, Mil-PRF-55310 Qualification or MIL-PRF-38534Group B Inspection will not be performed.3.4.7 Ruggedized COTS Design Implementation. Design Pedigree “D” devices (see ¶ 5.2) use thesame robust designs found in the other device pedigrees. They do not include the provisions of traceability or the Class-qualified componentry noted in paragraphs 3.4.3 and 4.1.REQUIREMENTS4. DETAIL4.1 Components4.1.1 Crystals. Cultured quartz crystal resonators are used to provide the selected frequency for thedevices. The optional use of Premium Q swept quartz can, because of its processing to remove impurities, be specified to minimize frequency drift when operating in radiation environments.In accordance with MIL-PRF-55310, the manufacturer has a documented crystal elementevaluation program.4.1.2 Passive Components.4.1.2.1 For Design Pedigree E, where available, resistors shall be Established Reliability, Failure RateR (as a minimum) and capacitors shall be Failure Rate S. Where resistors and capacitors arenot available as ER parts, and for all other passive components, the parts shall be fromhomogeneous manufacturing lots that have successfully completed the Enhanced ElementEvaluation of DOC208191 which meets the requirements of Mil-PRF-38534 Revision L forClass K.4.1.2.2 For Design Pedigrees R, V and X, where available, resistors shall be Established Reliability,Failure Rate R (as a minimum) and capacitors shall be Failure Rate S. Where resistors andcapacitors are not available as ER parts, and for all other passive components, the parts shall be from homogeneous manufacturing lots that have successfully completed the Class K Element Evaluation of Mil-PRF-38534 Revision K for Class K.4.1.2.3 For Design Pedigrees B and C, all passive elements shall comply with the Element Evaluationrequirements of Mil-PRF-55310 Class B as a minimum.4.1.2.4 For Design Pedigree D, the passive elements will be COTs level or higher.4.1.2.5 When used, inductors will be open construction and may use up to 47-gauge wire.4.1.3 Microcircuits.4.1.3.1 For Design Pedigree E, the microcircuits shall be from homogeneous wafer lots that meet theEnhanced Element Evaluation requirements in DOC208191 and meet the requirements of Mil-PRF-38534 Revision L for Class K.4.1.3.2 For Design Pedigree R, V and X, microcircuits shall be from homogeneous wafer lots that havesuccessfully completed the MIL-PRF-38534, Revision K Lot Acceptance Tests for Class K. 4.1.3.3 For Design Pedigrees B and C, microcircuits are procured from wafer lots that havesuccessfully completed the MIL-PRF-55310 Lot Acceptance Tests for Class B as a minimum.4.1.3.4 For Design Pedigree D, microcircuits can be COTs level or higher.4.1.4 Semiconductors (Varactor Diode)4.1.4.1 For Design Pedigree E, the semiconductors shall be from homogeneous wafer lots that meetthe Enhanced Element Evaluation requirements in DOC208191.4.1.4.2 For Design Pedigree R, V and X, semiconductors shall be from homogeneous wafer lots thathave successfully completed the MIL-PRF-38534, Revision K Lot Acceptance Tests for Class K devices as a minimum.4.1.4.3 For Design Pedigree B and C, semiconductors are procured from wafer lots that havesuccessfully completed the MIL-PRF-55310 Lot Acceptance Tests for Class B devices as a minimum.4.1.4.4 For Design Pedigree D, semiconductors can be COTs level or higher.4.1.5 Radiation. Microcircuits for Design Pedigrees E, R and V are certified to 100krad(Si) totalionizing dose (TID), RHA level R (2X minimum margin). NSC, as the original 54ACT designer, rates the SEU LET up to 40 MeV and SEL LET up to 120MeV for the FACT™ family (AN-932). Vectron conducted additional SEE testing in 2008 to verify this performance since our lot wafer testing does not include these parameters and determinations. Varactor diodes are considered radiation tolerant by design.4.1.6 Packages. Packages are procured that meet the construction, lead materials and finishes asspecified in MIL-PRF-55310. All leads are Kovar with gold plating over a nickel underplate.Package lots are evaluated in accordance with the requirements of MIL-PRF-38534. Vectronwill not perform Salt Spray testing as part of MIL-PRF-55310 Group C/Qualification. Inaccordance with MIL-PRF-55310, package evaluation results for salt atmosphere will besubstituted for Salt Spray testing during MIL-PRF-55310 Group C/Qualification.4.1.7 Traceability and Homogeneity. All design pedigrees except option D have active device lotsthat are traceable to the manufacturer’s individual wafer; all other elements and materials aretraceable to their manufacturer and incoming inspection lots. Design pedigrees E, R, V and Xhave homogeneous material. In addition, swept quartz crystals are traceable to the quartz barand the processing details of the autoclave lot. A production lot, as defined by Microchip, is all oscillators that have been kitted and built as a single group. The maximum deliverablequantity with a single lot date code is 225 units. Order quantities that exceed 225 units will be delivered in multiple lot date codes with deliveries separated by 2 weeks. If applicable, eachproduction lot will be kitted with homogeneous material which is then allocated acrossmultiple lot date code builds to satisfy the deliverable order quantity. When ordered, Group CInspection, lot qualifications, and/or DPA will be performed on the first build lot within theproduction lot unless otherwise stated on the purchase order.4.2 Mechanical.4.2.1 Package Outline. See Figure 1.4.2.2Thermal Characteristics. The worst-case thermal characteristics are found in Table 3.4.2.3Lead Forming. When the lead forming option is specified, the applicable leak test specified inscreening will be performed after forming.4.3 Electrical.4.3.1 Input Power. Devices are available with an input voltage of either +5.0 Vdc (±5%) or +3.3 Vdc(±5%). Current is measured, no load, at maximum rated operating voltage.4.3.2 Temperature Range. Operating range is -40°C to +85°C.4.3.3 Absolute Pull Range. Absolute pull range is defined as the minimum guaranteed amount theVCXO can be varied about the center frequency (fo). It accounts for degradations includingtemperature stability (-40°C to +85°C), aging (15 years), radiation effects, power supplyvariations (±5%) and load variations (±10%).4.3.4 Frequency Aging. When tested in accordance with MIL-PRF-55310 Group B inspection, the15-year aging projection shall not cause the minimum APR limit to be exceeded.4.3.5 Operating Characteristics. Symmetrical square wave limits are dependent on the devicefrequency and are in accordance with Table 1. Waveform measurement points and logic limits are in accordance with MIL-PRF-55310. Start-up time is 10.0 msec. maximum.4.3.6Output Load. ACMOS (10kΩ, 15pF) test loads are in accordance with MIL-PRF-55310.5.QUALITY ASSURANCE PROVISIONS AND VERIFICATION5.1Verification and Test. Device lots shall be tested prior to delivery in accordance with theapplicable Screening Option letter as stated by the 15th character of the part number. Table 4tests are conducted in the order shown and annotated on the appropriate process travelers and data sheets of the governing test procedure. For devices that require Screening Options thatinclude MIL-PRF-55310 Group A testing, the Post-Burn-In Electrical Test and the Group AElectrical Test are combined into one operation.5.1.1Screening Options. The Screening Options, by letter, are summarized as:A Modified MIL-PRF-38534 Class KB Modified MIL-PRF-55310 Class B Screening & Group A Quality ConformanceInspection (QCI)C Modified MIL-PRF-55310 (Rev E) Class S Screening & Group A QCID Modified MIL-PRF-38534 Class K with Group B AgingE Modified MIL-PRF-55310 Class B Screening, Groups A & B QCIF Modified MIL-PRF-55310 (Rev E) Class S Screening, Groups A & B QCIG Modified MIL-PRF-55310 Class B Screening & Post Burn-in NominalElectricalsS MIL-PRF-55310 (Rev F) Class S Screening & Groups A & B QCIX Engineering Model (EM)5.2 Optional Design, Test and Data Parameters. The following is a list of design, assembly,inspection, and test options that can be selected or added by purchase order request.a. Design Pedigree (choose one as the 5th character in the part number):(E) Enhanced Element Evaluation, (MIL-PRF-38534 Rev L for Class K components asspecified in DOC208191), 100krad die, Premium Q Swept Quartz(R) Hi-Rel design w/ 100krad Class K die, Premium Q Swept Quartz(V) Hi-Rel design w/ 100krad Class K die, Non-Swept Quartz(X) Hi-Rel design w/ Non-Swept Quartz, Class K die(B) Hi-Rel design w/ Swept Quartz, Class B die(C) Hi-Rel design w/ Non-Swept Quartz, Class B die(D) Hi-Rel design w/ Non-Swept Quartz and commercial grade componentsb. Input Voltage/APR, (L) for +3.3V/±30ppm, (N) for +5.0V/±30ppm and (W) for+5.0V/±50ppm as the 14th characterc. Not Usedd. Radiographic Inspectione. Group C Inspection: MIL-PRF-55310, Rev E (requires 8 destruct specimens)f. Group C Inspection: MIL-PRF-55310, Rev F (requires 8 destruct specimens, includesRandom Vibration, MIL-STD-883, Method 1014 Leak Test and Life Test)g. Group C Inspection: In accordance with MIL-PRF-38534, Table C-Xc, Condition PI(requires 8 destruct specimens – 5 pc. Life, 3 pc. RGA). Subgroup 1 fine leak test to beperformed per MIL-STD-202, Method 112, Condition C.h. Internal Water-Vapor Content (RGA) samples and test performancei. MTBF Reliability Calculationsj. Worst Case Circuit Analysis: (unless otherwise specified, MIL-HDBK-1547)k. Derating and Thermal Analysis (unless otherwise specified, MIL-HDBK-1547 with TjMax = +105°C; Derated Maximum Operating Temp = Tj Max – ΔTj)l. Process Identification Documentation (PID)m. Customer Source Inspection (pre-crystal mount pre-cap, post-crystal mount pre-cap and final). Due to components being mounted underneath the crystal blank, pre-crystalmount pre-cap inspection should be considered.n. Destruct Physical Analysis (DPA): MIL-STD-1580 with exceptions as specified in Vectron DOC203982.o. Qualification: In accordance with MIL-PRF-55310, Rev F, Table IV (requires 16 destruct specimens). Includes Group III, SG1 through SG6 only. ESD (SG7) notperformed.p. Qualification: In accordance with EEE-INST-002, Section C4, Table 3, Level 1 or 2 (requires 11 destruct specimens)q. High Resolution Digital Pre-Cap Photographs (20 Megapixels minimum)r. Hot solder dip of leads with Sn63/Pb37 solder prior to shipping5.2.1 NASA EEE-INST-002. A combination of Design Pedigree R, Option S Screening, andQualification per EEE-INST-002, Section C4, Table 3, meet the requirements of Level 1 and Level 2 device reliability.5.3Test Conditions. Unless otherwise stated herein, inspections are performed in accordance withthose specified in MIL-PRF-55310. Process travelers identify the applicable methods,conditions, and procedures to be used. Examples of electrical test procedures that correspond to MIL-PRF-55310 requirements are shown in Table 2.5.3.1 When MIL-PRF-55310, Revision F was being reviewed for release by manufacturers andusers, Vectron and other organizations recommended that burn-in delta limits not beapplied to logic level measurements due to the inconsistency in attempting to measuresmall changes in logic levels which inherently have ringing in the signal. This isespecially true in higher frequency oscillators measured in automated test systems thatare affected by cable length that is not representative of the user’s application and contactresistance in test fixtures that do not provide a consistent Vcc or Ground connection. Theexact test setup conditions may vary slightly from pre-burn-in to post-burn-in and causesmall artificial deltas in logic level measurements that are not indicative of an issue. Anysignificant changes in logic levels will be reflected in supply current deltas and/or logiclevels that exceed the min/max limits. As a result, we take exception to MIL-PRF-55310,Revision F, Para. 4.4.5 and the delta limit for Output Low Level as specified in 4.4.5(c)shall not be applied to Burn-in PDA.5.4Deliverable Data. The manufacturer supplies the following data, as a minimum, with each lotof devices:a. As applicable to the Screening Option chosen, completed assembly and screening lottravelers, screening data, including radiographic images, and rework history.b. Electrical test variables data, identified by unique serial number.c. Special items when required by purchase order such as Group C, DPA, and RGA data.d. For Design Pedigrees E, R, V, and X, traceability, component LAT, enclosure LAT,and wafer lot specific RLAT data for non-SMD active devices (if applicable).e. Certificate of Conformance.5.5Discrepant Material. All MRB authority resides with the procuring activity.5.6Failure Analysis. Any failure during Qualification or Group C Inspection will be evaluated forroot cause. The customer will be notified after occurrence and upon completion of theevaluation.6.PREPARATION FOR DELIVERY6.1Packaging. Devices will be packaged in a manner that prevents handling and transit damageduring shipping. Devices will be handled in accordance with MIL-STD-1686 for Class 1devices. Devices will be packaged for transport in accordance with DOC220429. Please note that “one unit per package” is available for a fee; however, this service must be requested aspart of the official RFQ.7.ORDERING INFORMATION7.1 Ordering Part Number. The ordering part number is made up of an alphanumeric series of15 characters. Design-affected product options, identified by the parenthetic letter on theOptional Parameters list (¶ 5.2a and b), are included within the device part number.The Part Number breakdown is described as:5116 R 10M00000 L F7.1.1 Model Number. The device model number is the four (4) digit number 5116.7.1.2 Design Pedigree. Class S variants correspond to either letter “E”, “R”, “V” or “X” and aredescribed in paragraph 5.2a. Class B variants correspond to either letter “B” or “C” and aredescribed in paragraph 5.2a. Ruggedized COTS, using commercial grade components,corresponds to letter “D”.7.1.3Output Frequency. The nominal output frequency is expressed in the format as specified inMIL-PRF-55310 utilizing eight (8) characters.7.1.4 Input Voltage (APR). “L” for +3.3V (±30ppm), “N” for +5.0V (±30ppm) and “W” for +5.0V(±50ppm) as the 14th character.7.1.5 Screening Options. The 15th character is the Screening Option (letter A thru G, S or X) selectedfrom Table 4.7.2Optional Design, Test and Data Parameters. Optional test and documentation requirementsshall be specified by separate purchase order line items (as listed in ¶ 5.2c thru s).Frequency Range: 1.0 MHz to 100.0 MHzTemperature Range: -40°C to +85°CPower Supply (Vcc): +3.3Vdc ±5% or +5.0Vdc ±5%Absolute Pull Range: ±30 ppm or ±50 ppm (+/-30 ppm only for +3.3Vdc)Control Voltage (Vc) Range: 0.3V to +3.0V with Vcc = +3.3VControl Voltage (Vc) Range: 0.5V to +4.5V with Vcc = +5.0VSlope: PositiveLinearity: 10% max.F vs. V Gain: 45 ppm/V min. to 105 ppm/V max.Start-up Time: 10.0 ms max.Frequency Range (MHz)Current (mA)(max. no load)Rise / FallTimes 1/(ns max.)Duty Cycle 1/(%)+5.25V +3.465V1 – 15 15 8 10 45 to 55>15 – 40 20 15 5 40 to 60>40 – 60 35 20 5 40 to 60>60 – 85 45 25 3 40 to 60>85 – 100 55 35 3 40 to 601/. Waveform measurement points and logic limits are in accordance with MIL-PRF-55310, Para 3.6.20.3.TABLE 1 - Electrical Performance CharacteristicsOPERATION LISTING REQUIREMENTS ANDCONDITIONS@ all Electrical TestsInput Current (no load) MIL-PRF-55310, Para 4.8.5.1 ************************.MIL-PRF-55310, Para 4.8.6 Output Logic Voltage Levels MIL-PRF-55310, Para 4.8.21.3 Rise and Fall Times MIL-PRF-55310, Para 4.8.22 Duty Cycle MIL-PRF-55310, Para 4.8.23 Frequency Deviation MIL-PRF-55310, Para 4.8.31.1 Linearity MIL-PRF-55310, Para 4.8.31.5Nominal conditions only@ Post Burn-In Electrical onlyOvervoltage Survivability MIL-PRF-55310, Para 4.8.4 Initial Freq. – Temp. Accuracy MIL-PRF-55310, Para 4.8.10.1 Freq. – Voltage Tolerance MIL-PRF-55310, Para 4.8.14 Start-up Time (fast/slow start) MIL-PRF-55310, Para 4.8.29TABLE 2 - Electrical Test ParametersModel # Thermal ResistanceJunction to Caseθjc (°C / W) Δ Junction Temp.T j(°*********)Weight(Grams)5116 31.62 9.13 1.2 Note: The maximum power from Table 2 is used to calculate the worst case Δ JunctionTemperature.TABLE 3 - Typical Thermal Characteristics and WeightTable 3a – Typical Phase Noise at 16MHz, 3.3VTable 3b – Typical Phase Noise at 16MHz, 5.0VTable 3c – Typical Phase Noise at 50MHz, 3.3VTable 3e – Typical Phase Noise at 80MHz, 3.3VTable 3g – Typical Phase Noise at 100MHz, 5.0VPin ConnectionsVoltage1 Control2 GND/Case3 Output4 VccFIGURE 1Model 5116 Package OutlineAPPENDIX A Recommended Land PatternModel 5116。