三极管规格书

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第 1 页共 2 页三极管规格书

【原创实用版】

1.三极管概述

2.三极管的分类

3.三极管的结构

4.三极管的参数

5.三极管的应用

6.三极管的规格书内容

正文

三极管，全称双极型晶体管，是一种常用的半导体器件。它具有三个控制电极，分别是发射极、基极和集电极，因此得名三极管。根据电流放大系数不同，三极管可以分为两类：NPN 型和 PNP 型。

三极管的结构包括三个区域：n 型区、p 型区和 n 型区，分别对应发射极、基极和集电极。发射极和集电极之间的电流放大作用是通过基极电流的控制实现的。当基极电流流过时，发射极的电子会进入基极，再从基极进入集电极，从而实现电流的放大。

三极管的参数主要包括：电流放大系数、发射极电流、基极电流、集电极电流、集电极电压等。电流放大系数是衡量三极管放大能力的重要参数，发射极电流和基极电流是控制三极管工作的主要电流，集电极电流和集电极电压则是三极管输出电流和电压的主要参数。

三极管广泛应用于放大、开关、调制、稳压等电路中，是构成模拟和数字电路的重要基础元件。

三极管的规格书通常包含以下内容：器件型号、尺寸、电流放大系数、工作电压、工作温度范围、静态工作电流、动态工作电流、输入电阻、输第 2 页共 2 页出电阻等。

2SA1318三极管参数 TO-92直插三极管2SA1318规格书

A,Dec,2010 TO – 92 1. EMITTER 2. COLLECTOR 3. BASE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA1318 TRANSISTOR (PNP) FEATURES z Large Current Capacity and Wide ASO APPLICATIONS z Capable of Being Used in The Low Frequency to High Frequency Range MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-0.01mA,IE=

0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=

0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-0.01mA,IC=

0 -6 V Collector cut-off current ICBO VCB=-40V,IE=

0 -0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=

0 -0.1 μA hFE(1) VCE=-6V, IC=

-1mA 100 560

DC current gain

hFE(2) VCE=-6V, I

超声波焊接机专用大功率三极管2SC3998规格书参数资料

1SPTECHSiliconNPNPowerTransistor2SC399860L

DESCRIPTION

·HighSwitchingSpeed

·HighBreakdownVoltage-

(BR)CBO=1100V(Min)

APPLICATIONS

·Designedforhorizontaldeflectionoutputapplications.ABSOLUTE

MAXIMUM

RATINGS(Ta=25℃)

SYMBOLPARAMETERVALUEUNIT

CBOCollector-BaseVoltage1100V

CEOCollector-EmitterVoltage600V

EBOEmitter-BaseVoltage6V

CCollectorCurrent-Continuous25A

CMCollectorCurrent-Pulse50A

CCollectorPowerDissipation

C=25℃200W

JJunctionTemperature150℃

TstgStorageTemperatureRange-55~150℃SPTECH 2SC3998

2SPTECHSiliconNPNPowerTransistor2SC399860L

ELECTRICALCHARACTERISTICST

C=25℃unlessotherwisespecified

SYMBOLPARAMETERCONDITIONSMINTYP.MAXUNIT

CEO(SUS)Collector-EmitterSustainingVoltageI

C=10mA;I

B=0600V

CE(sat)Collector-EmitterSaturationVoltageI

C=20A;I

B=5A5.0V

BE(sat)Base-EmitterSaturationVoltageI

C=20A;I

B=5A1.5V

CBOCollectorCutoffCurrentV

2SC1654贴片三极管规格书

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

2SC1654 TRANSISTOR (NPN)

FEATURES

 High Frequency Power Amplifier Application  Power Swithing Applications

MAXIMUM RATINGS (Ta=25℃

unless otherwise noted)

Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current 50 mA PC Collector Power Dissipation 150 mW RΘJA Thermal Resistance From Junction To Ambient 833 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 180 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 160 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=130V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 µA hFE(1) VCE=3V, IC=15mA 90 400 DC current gain hFE(2) VCE=3V, IC=1mA 70 Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=50mA, IB=5mA 1 V Transition frequency fT VCE=10V,IC=10mA 120 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 2.3 pF CLASSIFICATION OF hFE(1) RANK N5 N6 N7 RANGE 90–180 135–270 200–400 MARKING N5 N6 N7