三极管场效应管参数大全
三极管、场效应管参数大
说明：三极管标有（达）字即达林顿管；（D）字即带阻尼管。2SA.2SB是PNP管 2SC.2SD是NPN管. 2管，2S、2SD是低频管.
三极管系列
型号结构外形参数
2N2222NPN TO-9260V 0.8A 0.5W
2N2907PNP TO-9260V 0.4A 0.4W
2N3055NPN TO-3100V 15A 117W
2N3772NPN TO-3100V 30A 150W
2N3904NPN TO-9260V 0.2A 0.3W
2N3906NPN TO-9240V 0.2A 0.3W
2N3907NPN TO-9260V 0.03A 60MHZ
2N4126PNP TO-9225V 0.2A 0.3W
2N4400NPN TO-9260V 0.6A
2N4401NPN TO-9260V 0.6A
2N4402PNP TO-9240V 0.6A
2N4403PNP TO-9240V 0.6A
2N5191NPN TO-12660V 4A 40W
2N5192NPN TO-12680V 4A 40W
2N5193PNP TO-12640V 4A 40W
2N5194PNP TO-12660V 4A 40W
2N5195PNP TO-12680V 4A 40W
2N5210PNP TO-926V 0.05A
2N5401PNP TO-92160V 0.6A 0.3W
2N5460PNP TO-9240V 1MA
2N5551NPN TO-92180V 0.6A 0.3W
2N5609PNP80V 5A 25W Hfe70~100
2N5684PNP TO-380V 50A 300W 2N5685NPN TO-360V 50A 300W
2N5686NPN TO-380V 50A 300W
2N6274NPN TO-3120V 50A 250W
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
MMBT4403 TRANSISTOR (PNP)
FEATURES Switching transistor MARKING ：2T MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter SymbolTest conditions MinMax UnitCollector-base breakdown voltage V(BR)CBOIC=-100μA , IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEOIC= -1mA , IB=0 -40 V Emitter-base breakdown voltage V(BR)EBOIE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-35V, IE=
A,Dec,2010 TO – 92 1. EMITTER 2. BASE 3. COLLECTOR JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N4402 TRANSISTOR (PNP) FEATURES z General Purpose Amplifier Transistor MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ MaxUnitCollector-base breakdown voltage V(BR)CBO IC= -0.1mA,IE=
0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=
0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-0.1mA,IC=
0 -5 V Collector cut-off current ICBO VCB=-40V,IE=
0 -0.1μA Emitter cut-off current IEBO VEB=-4V,IC=
0 -0.1μ
A VCE=-1V, IC=
-1mA 30
VCE=-1V, IC=
-10mA 50 VCE=-2V, IC=
-150mA 50 150 DC current gain hFE* VCE=-2V, IC=
-500mA 20 IC=-150mA,IB=-15mA -0.4V Collector-emitter saturation voltage VCE(sat)* IC=-500mA,IB=
