LN61C系列 高精度低功耗小封装电压检测器 LN61C 系列 ■ 产品

DOI:10.19551/ki.issn1672-9129.2021.03.068低功耗压力采集系统设计秦允振(上海控宇自动化仪表有限公司㊀201107)摘要:本文介绍了一款采用电池供电的低功耗压力采集设备㊂文章从硬件设计和软件设计分别进行产品介绍㊂硬件设计介绍了,根据产品需求选择硬件主控芯片设计低功耗的硬件电路,低功耗芯片选择STM32L151㊂软件介绍了,使用芯片低功耗控制单元实现休眠模式下保持通讯模块运行㊂软件设计对硬件模块电路控制流程的优化,进程调度中控制硬件模块保持休眠或唤醒㊂使用实时操作系统控制业务流程,在读取压力数据时如何采集压力使功耗电流才能更小㊂用最短时间完成上传数据到服务器的任务,完成任务关闭外设电路使系统进入休眠状态㊂本方案是在硬件和软件配合下完成低功耗压力采集㊂关键词:实时操作系统;STM32L151;休眠模式;进程调度中图分类号:TH812㊀㊀㊀文献标识码:A㊀㊀㊀文章编号:1672-9129(2021)03-0067-02㊀㊀1㊀引言在日常生活中每个家庭都用到燃气,燃气通过管道输送时,安全是不可忽略的一部分㊂需要一台设备对燃气管道的压力实时跟踪检测,对检查的压力情况及时上报到后台服务器或向后台服务器发送报警事件㊂因为,根据国家规定燃气管道附近不能有电线,电线需要和管道留一个安全距离,所以燃气管道的压力检测设备是不能用电线供电的,这样只能用电池供电㊂电池供电设备需要尽量节省功耗㊂综合上述条件,低功耗压力采集设备在燃气运输中不可缺少的㊂根据产品现实应用场景,查找市场低功耗产品分析学习,最终选择高性能超低功耗ARM处理器STM32L151,这款处理器专门用于超低功耗设备,提供了5种时钟源用于在各种功耗模式切换[5]㊂通讯模块选用4G通讯模块(EC20),这款通讯模块市场使用比较多相对比较稳定㊂软件操作系统选择比较精简的实时操作系统FreeRTOS[1],此操作系统代码容易修改维护,进程控制方便㊂有利于优化软件代码流程,做到及时响应事件,快速的完成数据采集和保存,数据上传到服务器㊂使设备用最短时间处理完任务,进入休眠状态做到低功耗㊂2㊀原理与设计2.1硬件设计㊂在电子产品上,硬件设计是基础㊂对于低功耗硬件设计需要更多注意电源电路模块设计,做到每量数据下,人脸识别方法的训练,提升识别率,人脸算法的性能和人脸数据库总量成反比㊂所以人脸识别技术提高的关键在于对外界影响因素的调整能力,只有不断的改善,才能适应外界因素的影响㊂4㊀人脸识别技术在微卡口监控中的应用微卡口是智慧公安建设的一部分,也是智慧型社区防范保障体系的一部分,主要包括小区出入口㊁医院出入口㊁银行出入口㊁校园出入口等区域,监控内容主要包括人脸识别㊁车牌识别㊁实时监控录像等㊂前端人脸识别摄像机具有深度学习算法,机器自身提取目标特征,可形成深层可供学习的人脸图像,支持人脸跟踪,多帧识别,自动筛选,减少重复抓拍,支持人脸瞳距20像素以上的人脸检测;后端采用超脑一体机,集IPC接入㊁存储㊁控制㊁智能分析于一体,实现精准人脸㊁人体㊁车辆识别分析,最终输出结构化数据加人脸图片㊂当前微卡口监控人脸识别技术应用最主要实现的功能是以人搜人以及1:N人脸比对㊂以人搜人主要是在本地或检索记录中上传一张人脸识别照片,进行人体以图搜图,检索结果按相似度高低进行排序;人脸比对主要是根据实时人脸分析结果,与50万在逃库及吸毒库进行结构化1:N模式进行人脸比对,达到或超过预设阈值的,进行报警联动,同时在控制中心或前端支持报警展现㊂人脸识别监控主要由前端人脸识别摄像机㊁传输设备㊁存储设备㊁人脸检测㊁识别㊁跟踪㊁比对等处理分析模块组成;具体工作流程为人脸识别摄像机输出人脸抓拍图片至超脑进行结构化处理,与数据库内人脸布控数据进行智能分析比对,出现警情后进行数据上传,并在显示终端展现报警的动态人脸图片;在这个过程中,人脸识别是核心,主要包括图像摄录㊁人脸检测㊁人脸定位㊁人脸识别㊁人脸结构化处理㊁人脸分析比对等几个过程㊂人脸识别技术极大提高了视频监控的清晰度和辨别度,这对人脸的识别和排查有着巨大帮助㊂在公安人员进行办案的过程中,人脸识别技术无疑节省了大量的人力和物力,技术人员无须从海量的数据库中一一对比,通过人脸识别技术即可立即分析出人物特征㊂这对我国的社会安全发展起到了很大的促进作用㊂在视频监控的动态视频中,技术人员研发了每一帧画面中提取出人类的面部特征的技术,从提取的人脸信息与数据库中的信息进行对比可以达到事半功倍的效果㊂5㊀人脸识别发展趋势随着生物特征识别技术发展,近几年人脸识别技术也进入爆发模式,尤其商业应用价值越来越高,市场行业应用越来越广泛㊂人脸识别技术是未来安防行业的重大支撑,从安防行业前端设备来说,近年科技人员研究出一种红外线人脸识别技术,通过红外线人脸识别技术,不管是在哪种光线条件下都能提取到比较清晰的面部图像㊂红外线人脸识别技术是传统人脸识别技术的一个实质性突破,在未来的几年中有望大幅应用到人脸识别智能监控系统㊂从算法上来看,当前3D立体人脸识别算法已经对2D 算法缺陷做了补充,对于人脸旋转㊁遮挡㊁相似度等难点,也有一定的应对措施;通过与大数据的结合,深度学习量的扩大,进一步提升了人脸识别的精确度㊂比如通过人脸识别技术使得公安历史照片数据再度存储利用,形成人脸大数据库,能够大大提升公安信息化的管理和统筹,以及历史案件的破获率㊂当前,人脸识别也有自身的使用范围和局限性,为此基于人脸识别的多生物特征融合识别模式将是未来高精度识别系统的首要选择,也是未来身份鉴别领域的发展趋势㊂人脸识别可视化程度高,可以作为基本配置,包括融合指纹㊁掌纹㊁虹膜㊁视网膜㊁声纹㊁手血管㊁步态等方式的深度融合㊂人脸识别与第三方认证的结合也将成为人脸识别发展的重大趋势,第三方认证最常见的有RFID智能卡㊁USB加密秘钥等方式㊂RFID卡也可以实现无感识别,只需授权并与人脸绑定即可实现安全管理和认证;USB加密秘钥一般是重要终端登录的安全验证方式㊂6㊀结束语总的来说,人脸识别技术是近几年来一项新兴技术,虽然起步的时间较晚,但智能监控中的人脸识别系统已经取得了广泛的应用,并得到了市场的认可,也进入到我们生活的方方面面㊂未来将是人脸识别为主的多生物态组合㊁多模式融合的发展趋势,先进的人脸识别系统为我们的生活带来极大的便利的同时,也会越来越安全,让我们生活的环境越来越安全,让生活更美好㊂参考文献:[1]柳莲花,邹香玲.探究智能视频监控系统中人脸检测与识别技术的应用和相关问题[J].中国安防技术,2018 (21):25.[2]李建勇,周祥彬.探究人脸识别技术在智能视频监控系统中的应用与改进措施[J].中国安防,2019(4):50.㊃76㊃个元器件没有多余的耗电电流㊂为了使硬件没有多余电流,硬件设计上对每个硬件模块添加了电源控制电路,使软件通过GPIO[2]可以控制硬件模块上电工作情况㊂即在系统进入休眠时,软件控制MCU休眠前,通过GPIO先对外设硬件电路下电㊂这样确保系统休眠后,外设硬件处于掉电状态㊂硬件控制电路的主要设计如下:(1)低功耗控制电路设计㊂本设计低功耗硬件电路,根据低功耗MCU[2](STM32L151[4,5])低功耗属性针对控制引脚合理分配㊂主要思路是对外部设备(如4G通讯模块),添加了电源控制电路,用于在不传输数据的时候把4G模块断电,对于LCD显示模块去掉了背光显示电路㊂对于需要休眠时运行的外部电路,配置到可以在低功耗休眠时也能工作的GPIO上,如休眠抓log端口可以配置成低功耗usart㊂(2)通讯电路设计㊂通讯电路是功耗比较大模块㊂在设计低功耗电路时,经过反复改版才完成对通讯模块降低功耗,最终满足的产品的需求㊂通讯模块降低功耗是技术难点,因为通讯电路主要是无线通讯4G电路[5],4G模块电路就涉及到射频电路[6],射频的发射与接收是非常耗电的㊂而且数据发送接收对信号要求比较高,如果设计不好信号会影响比较大㊂信号不好传输数据的时候耗时会比较大,或者传输数据连接不到服务器,导致数据需要重新上传,这样更增加了功耗㊂为了降低功耗4G通讯模块采用MCU的低功耗UART[3]进行通讯,这样在MCU低功耗状态也能保持数据传输㊂2.2软件设计㊂软件设计采用分任务控制方法,分别创建三个进程:休眠任务进程;UI刷新进程;数据上传4G 进程㊂(1)功耗控制方法㊂软件控制功耗的思路是在设备运行时尽量使任务都处于休眠状态㊂任务处于休眠就是把任务唤醒时间缩短,即对每个任务处理数据时做优化㊂对于压力读取,模块发送数据等高功耗操作,系统会退出低功耗模式,进入高速运行模式,使工作尽快处理完毕㊂如果处理进程需要等待某个事件或延迟等待,任务会自动进入休眠,等待事件到后,自动唤醒任务继续处理㊂(2)压力采集㊂压力采集使用PM100-L数字压力传感器㊂这种传感器具有定时自动捕获压力的功能,并且在待机时功耗在1uA㊂软件通过IIC总线读取压力,因为IIC是高频时钟总线所以读取压力数据时,系统必须退出休眠状态,这样会增加功耗㊂为了避免功耗增加功耗,读取压力的操作并没有单独放入定时器中断进行,而是放在UI刷新进程里执行压力读取㊂这样设计有助减少系统唤醒次数,从而降低功耗的作用㊂(3)数据上传㊂压力数据上传使用4G通讯模块发送数据时的功耗比较大,所以对4G模块的操作做了单独优化处理㊂首先,在数据不上传时模块要处于断电关机状态使功耗最小㊂其次,每数据传输时对于传输的数据流程进行优化㊂在4G模块在初始化时,需要等待一段时间,这段时间的功耗比较大,而且模块处于初始化状态,程序不能对其操作,所以程序对这段流程做了优化㊂在模块开机后,保持模块供电,然后系统进入休眠㊂等待10秒后模块准备就绪后,系统退出休眠模式,进行上传数据,这样做到细节上降低功耗㊂3㊀实验及数据分析通过上述硬件和软件配合设计,再根据产品需求定义,最终选定设备的处理流程为:每2秒唤醒一次系统,在系统唤醒时,做读取压力值,刷新系统时间,检测上报数据等操作㊂设备以这个处理流程,用3.3V电池供电㊂在供电总电路上串联一个60Ω电阻,用示波器在电阻两端测量电压变化㊂得出如下波形图:通过测量得出图2,图3,图2得出系统2秒唤醒一次,每次唤醒很短时间系统恢复休眠㊂图3得出每次唤醒时间大概是25ms,唤醒后60Ω电阻电压约等于330mv㊂根据欧姆定律,得出电流:I=U/R=330mv/60Ω=5.5mA 即得出在系统唤醒工作时,电流约为5.5mA㊂得出系统工作的平均电流:i=5.5mA/(2000ms/ 25ms)=68uA即出系统的平均工作电流68uA㊂验证压力数据上传的时间在如下日志中㊂日志是包含了4G模块的信息,从StartReport开始代表4G模块开始上电㊂然后等待大约8秒以后,模块上电完成回复了(RDY OK[7])代表就绪㊂下面是模块找SIM卡(CPIN:READY OK[7])和找移动网络用了两秒时间㊂找到移动网络后,软件开始连接后台服务器,(+QIOPEN:1,0[7])代表设备和后台服务器连接建立完成了㊂到最后发送数据完成总共耗时13秒㊂因为模块上电时间固定是8秒,这个耗时是模块从断电到上电必须的,系统在此时间进行休眠等待㊂数据实际上传数据时间是5秒,这个时间满足产品需求上传数据后快速进入休眠状态㊂4㊀结论本系统设计利用了模块化设计理论,用软件对硬件电路分模块进行管理,对产品功耗实现了有效控制㊂软件通过控制MCU的各种工作模式相互切换,使MCU工作在低功耗㊂软件控制开关电路实现对硬件模块使用时进行供电,不用时断电㊂在进程调度上做细节优化,做到各个功能操作并行处理,完成了尽量少占用MCU资源,使整体设备功耗更低㊂当然对于功耗设计本产品还是有不足的地方,后续可以对于压力采集算法进行待优化比如采用DMA直传的形式㊂另外对于通讯模块选型,可以查找选择一个低功耗的通讯模块㊂最后希望在追求低功耗设备产品设计上,本文的设计思路和方法可以供相关产品借鉴参考㊂参考文献:[1]刘火良㊁杨森,FreeRTOS内核实现与应用开发实战指南:基于STM32[M],北京:机械工业出版社,2019. [2]王永虹㊁徐炜㊁郝立平,STM32系列ARM Cortex-M3微控制器原理与实践[M],北京航空航天大学出版社,2008.[3]张健㊁刘永民,嵌入式系统低功耗电路设计[J],光电技术应用,2005,20(6):1.[4]STMicroelectronics,‘RM0038_STM32L100xx, STM32L151xx,STM32L152xx和STM32L162xx单片机参考手册“[S],https://.[5]STMicroelectronics,‘DS8928_STM32L162VC, STM32L162RC单片机的数据手册“[S],https://www.stmcu. .[6]Quectel,‘Quectel-EC20-R2.0-硬件设计手册-V1.2“[S],https:///cn.[7]Quectel,‘Quectel_EC20_R2.0_AT_Commands_Manu-al_V1.1“[S],https:///cn.㊃86㊃。

5-7节锂电池二次保护IC概述HTL6217系列内置高精度电压检测电路和延迟电路，是用于锂离子可充电电池的二次保护IC。

通过将各节电池间短路，可适用于5节 ~7节电池的串联连接。

特点⏹针对各节电池的高精度电压检测电路过充电检测电压n(n=1~7)：3.60 V ~ 4.80 V (50 mV进阶)精度±25 mV (Ta = +25℃)精度±30 mV (Ta = -5︒C ~ +55︒C) 过充电滞后电压n(n=1~7)：0.1V ~ 0.4V (0.1V进阶)精度：±50mV⏹仅通过内置电路即可获得检测时的延迟时间 (不需要外接电容)⏹可选择过压检测延时时间：1s，2s，4s，6s⏹可选择输出方式：CMOS输出、NMOS漏极输出、PMOS漏极输出⏹可选择输出逻辑：动态 "H"、动态 "L"⏹可选断线保护功能⏹高耐压：绝对最大额定值40V⏹工作电压范围广： 4 V ~ 35V⏹工作温度范围广： Ta = -40︒C ~ +85︒C⏹消耗电流低各节电池V CUn -1.0 V时：5.0μA(最大值)(Tα = +25︒C)⏹无铅(Sn 100%)、无卤素应用锂离子可充电电池(二次保护用)5-7节锂电池二次保护IC 典型应用电路1、7节串联VCCVC7VC6VC5VC4 VC3 VC2 VC1 VSSCHC HTL6217系列R VCC R1C VCCC6C5C4C3C2C1BAT7 BAT6 BAT5 BAT4 BAT3 BAT2 BAT1SC PROTECTORFETEB+EB-R7R6R5R4R3R2C7R H2R H1图1 7节串联外接元器件参数No. 元器件最小值典型值最大值单位1 R1 ~ R7 0.5 1 10 kΩ2 C1 ~ C7 0.01 0.1 1 μF3 C VCC0.1 1 10 μF4 R VCC0.05 0.5 1 kΩ5 R H1，R H2 1 5 10 MΩ注意：1.上述参数有可能未经预告而改变。

LOW SENSITIVITY MICROPOWER OMNIPOLAR HALL-EFFECT SWITCHDescriptionThe AH1815 is a low-sensitivity, micro-power Omnipolar Hall effect switch IC, designed for portable and battery powered consumer equipment for home appliance and industrial applications such as smart-meter magnetic-tamper detection. Based on two sensitive Hall effect plates and a chopper-stabilized architecture, the AH1815 provides a reliable solution over the whole operating range. To support portable and battery powered equipment, the design has been optimized to operate over the supply range of 2.5V to 5.5V and consumes only 24µW with a supply of 3V.The single open drain output can switch on with either a north or south pole of sufficient strength. When the magnetic flux density (B) perpendicular to the package is larger than operating point (Bop) the output is switched on (pulled low). The output is turned off when B becomes lower than the releasing point (Brp). The output will remain off when there is no magnetic field.Features∙ Omnipolar (North or South pole) Operation ∙ Low Sensitivity∙ Single Open Drain Output ∙ Micropower Operation∙ 2.5V to 5.5V Operating Range∙Chopper Stabilized Design Provides Superior Temperature Stability Minimal Switch Point Drift Enhanced Immunity to Stress ∙ Good RF Noise Immunity∙ -40°C to +125°C Operating Temperature ∙ ESD (HBM) > 6KV∙ Small Low Profile SOT553 and Industry Standard SC59 and SIP-3 Packages∙ Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ∙ Halogen and Antimony Free. “Green” Device (Note 3)Pin Assignments(Top View)132OUTPUTGND V DDSC59(Top View)NC OUTPUTV DDGND NCSOT553(Front View)1.V DD2.GND3.OUTPUTSIP-3Applications∙ Doors, Lids, Covers and Tray Position Detect Switches ∙ Display Switch for Portable PCs and Tablets ∙ On/Off Switch for PDAs and Digital Cameras∙ Liquid Level Detection for Coffee Machines ∙ Smart Meters∙Position, Proximity and Level Detection Contactless Switch in Battery Powered Consumer, Home Appliances and Industrial ApplicationsNotes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.2. See /quality/lead_free.htmlfor more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free.3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.Typical Applications Circuit (Note 4)CNote: 4. C IN is for power stabilization and to strengthen the noise immunity, the recommended capacitance is 10nF to 100nF.R L is the pull-up resistor, the recommended resistance is 10kΩ to 100k Ω.Pin DescriptionsPackages: SC59 and SIP-3Package: SOT553Note:5. NC is “No Connection” pin and is not connected internally. This pin can be left open or tied to ground.Functional Block DiagramNotes: 6. Stresses greater than the 'Absolute Maximum Ratings' specified above may cause permanent damage to the device. These are stress ratings only;functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability maybe affected by exposure to absolute maximum rating conditions for extended periods of time.7. The absolute maximum V DD of 7V is a transient stress rating and is not meant as a functional operating condition. It is not recommended to operatethe device at the absolute maximum rated conditions for any period of time.Electrical Characteristics (@T A = +25°C, V DD = 3V, unless otherwise specified.)Note: 8. When power is initially turned on, the operating V DD must be within its correct operating range (2.5V to 5.5V) to guarantee the output sampling.The output state is valid after the second operating cycle (typical 150ms).Magnetic Characteristics (Notes 9 & 10) (@T A = -40°C to +125°C, V DD = 2.5V to 5.5V, unless otherwise specified.)Notes: 9. Typical data is at T A = +25°C, V DD = 3V, and for design information only.10. Maximum and minimum parameters values over the operating temperature range are not tested in production, they are guaranteed by design, characterization and process control. The magnetic characteristics may vary with supply voltage, operating temperature and after soldering. 11. Maximum and minimum hysteresis is guaranteed by design and characterization.rps ops( Magnetic Flux Density B )opn rpnTypical Operating CharacteristicsMagnetic Operating Switch Points – Bop and BrpAverage Supply CurrentThermal Performance Characteristics(1) Package Types: SC59, SOT553 and SIP-3Ordering Information7 : Tape & ReelW : SC59Z : SOT553P : SIP-3B : Bulk (Note 13)A : Ammo Box (Note 12)Notes: 12. Ammo Box is for SIP-3 Spread Lead.13. Bulk is for SIP-3 Straight Lead.P D (mW)Power Dissipation CurveAMarking Information(1) Package Type: SC59( Top View )XX : Identification Code W : Week : A to Z : 1 to 26 week;Y : Year 0 to 9a to z : 27 to 52 week; z represents 52 and 53 week X : Internal Code(2) Package Type: SOT553( Top View )Y : Year : 0 to 9X : Internal codeXX : Identification Code W : Week : A to Z : 1~26 week;a to z : 27~52 week; z represents 52 and 53 week(3) Package Type: SIP-3Part Number (Front View)X : Internal CodeY : Year : 0 to 9WW : Week : 01~52, "52" represents 52 and 53 weekPackage Outline Dimensions (All dimensions in mm.)Please see AP02002 at /datasheets/ap02002.pdf for the latest version.(1) Package Type: SC59Min/MaxSensor LocationPlease see AP02002 at /datasheets/ap02002.pdf for the latest version.(2) Package Type: SOT553C LSURFACEMin/MaxSensor LocationPlease see AP02002 at /datasheets/ap02002.pdf for the latest version.(3) Package Type: SIP-3 (Bulk Pack)PART PART MARKING SURFACEMin/MaxSensor LocationAH1815Document number: DS37970 Rev. 2 - 211 of 13September 2015© Diodes IncorporatedPackage Outline Dimensions (cont.) (All dimensions in mm.)Please see AP02002 at /datasheets/ap02002.pdf for the latest version.(4) Package Type: SIP-3 (Ammo Pack)PART PART Min/MaxSensor LocationAH1815Document number: DS37970 Rev. 2 - 212 of 13September 2015© Diodes IncorporatedSuggested Pad LayoutPlease see AP02001 at /datasheets/ap02001.pdf for the latest version.(1) Package Type: SC59(2) Package Type: SOT553X E Y C Z XZYC1C2C2G13 of 13 September 2015 © Diodes IncorporatedAH1815Document number: DS37970 Rev. 2 - 2。

XC61C SeriesLow Voltage Detectors (V DF= 0.8V～1.5V) Standard Voltage Detectors (V DF 1.6V～6.0V)■GENERAL DESCRIPTIONThe XC61C series are highly precise, low power consumption voltage detectors, manufactured using CMOS and laser trimming technologies.Detect voltage is extremely accurate with minimal temperature drift.Both CMOS and N-ch open drain output configurations are available.■APPLICATIONS●Microprocessor reset circuitry●Memory battery back-up circuits●Power-on reset circuits●Power failure detection●System battery life and charge voltage monitors■TYPICAL PERFORMANCE CHARACTERISTICS■FEATURESHighly Accurate :±2%: ± 1%(Standard Voltage VD: 2.6V~5.1V)Low Power Consumption : 0.7μA (TYP.) [V IN=1.5V]Detect Voltage Range: 0.8V ~ 6.0V in 0.1V incrementsOperating Voltage Range: 0.7V ~ 6.0V (Low Voltage)0.7V～10.0V (Standard Voltage)Detect Voltage Temperature Characteristics:±100ppm/℃ (TYP.)Output Configuration: N-ch open drain or CMOSPackages :SSOT-24SOT-23SOT-89TO-92Environmentally Friendly : EU RoHS Compliant, Pb Free■TYPICAL APPLICATION CIRCUITSETR0201_015PIN NUMBERSSOT-24SOT-23SOT-89TO-92PIN NAMEFUNCTION 2 3 2 2 V INSupply Voltage Input4 2 3 3 V SS Ground 1 1 1 1 V OUT Output3 - - -NCNo ConnectionDESIGNATORITEMSYMBOLDESCRIPTIONC CMOS output① Output ConfigurationN N-ch open drain outpute.g.0.9V → ②0, ③9②③Detect Voltage08 ~ 60e.g.1.5V→②1,③5④ Output DelayNo delay1 Within±1% (V DF(T)=2.6V~5.1V)⑤ Detect Accuracy2 Within ±2% NR SSOT-24 (SC-82) (3,000/Reel) NR-G SSOT-24 (SC-82) (3,000/Reel) MR SOT-23 (3,000/Reel) MR-G SOT-23 (3,000/Reel) PR SOT-89 (1,000/Reel)PR-G SOT-89 (1,000/Reel) TH TO-92 Taping Type: Paper type (2,000/Tape) TH-G TO-92 Taping Type: Paper type (2,000/Tape) TB TO-92 Taping Type: Bag (500/Bag) ⑥⑦-⑧ (*1) Packages (Order Unit)TB-G TO-92 Taping Type: Bag (500/Bag)■PIN CONFIGURATION■PIN ASSIGNMENT■PRODUCT CLASSIFICATION ●Ordering InformationXC61C ①②③④⑤⑥⑦-⑧(*1) (*1)The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.TO-92 (SIDE VIEW)XC61CSeries*1: Low voltage: V DF(T)=0.8V~1.5V*2: Standard voltage: V DF(T)=1.6V~6.0VPARAMETERSYMBOL RATINGSUNITS *1 V SS -0.3 ~ 9.0Input Voltage*2 VINV SS -0.3 ~ 12.0V Output CurrentIOUT50mACMOS V SS -0.3 ~ V IN +0.3N-ch Open Drain Output *1V SS -0.3 ~ 9.0Output VoltageN-ch Open Drain Output *2VOUTV SS -0.3 ~ 12.0 VSSOT-24 150SOT-23 150SOT-89 500Power DissipationTO-92 Pd 300 mW Operating Temperature Range Topr -40～+85 ℃ Storage Temperature Range Tstg -40～+125 ℃ ■BLOCK DIAGRAMS■ABSOLUTE MAXIMUM RATINGSTa = 25O C (1) CMOS Output(2) N-ch Open Drain OutputPARAMETER SYMBOL CONDITIONS MIN.TYP . MAX. UNITS CIRCUITSV DF(T)=0.8V~1.5V *1 V DF(T)=1.6V~6.0V *2 V DF(T)x 0.98V DF(T)V DF(T) x 1.02 V 1 Detect VoltageV DFV DF(T)=2.6V~5.1V *2V DF(T)x 0.99V DF(T)V DF(T)x 1.01 V 1 Hysteresis RangeV HYSV DF x 0.02V DF x 0.05 V DFx 0.08 V 1V IN = 1.5V - 0.7 2.3 V IN = 2.0V - 0.8 2.7V IN = 3.0V - 0.9 3.0V IN = 4.0V - 1.0 3.2 Supply Current I SSV IN = 5.0V- 1.1 3.6 μA 2 Operating Voltage *1V DF(T) = 0.8V to 1.5V 0.7 - 6.0Operating Voltage *2 V INV DF(T) = 1.6V to 6.0V0.7 - 10.0 V 1V IN = 0.7V0.100.80 -N-ch V DS = 0.5VV IN = 1.0V 0.85 2.70 - 3Output Current *1CMOS, P-ch V DS = 2.1VV IN = 6.0V - -7.5 -1.5 4V IN = 1.0V 1.0 2.2 -V IN = 2.0V3.0 7.7 -V IN = 3.0V5.0 10.1 -V IN = 4.0V 6.0 11.5 - N-ch V DS = 0.5V V IN = 5.0V7.0 13.0 - 3 Output Current *2I OUTCMOS, P-ch V DS = 2.1V V IN = 8.0V- -10.0 -2.0 mA 4CMOS Output (Pch) V IN =V DF x0.9, V OUT =0V --10 - LeakageCurrent N-chOpen DrainI LEAKV IN =6.0V, V OUT =6.0V *1V IN =10.0V, V OUT =10.0V *2- 10 100 nA 3Temperature Characteristics ΔV DF / (ΔTopr ･V DF ) -40℃ ≦ Topr ≦ 85℃-±100-ppm/℃1Delay Time(V DR →V OUT inversion)t DLYInverts from V DR to V OUT - 0.03 0.20 ms 5■ELECTRICAL CHARACTERISTICSV DF (T) = 0.8V to 6.0V ± 2% V DF (T) = 2.6V to 5.1V ± 1%NOTE:*1: Low Voltage: V DF(T)=0.8V~1.5V*2: Standard Voltage: V DF(T)=1.6V~6.0V V DF (T): Nominal detect voltage Release Voltage: V DR = V DF + V HYSTa=25℃XC61CSeries ■OPERATIONAL EXPLANATION(Especially prepared for CMOS output products)①When input voltage (V IN) is higher than detect voltage (V DF), output voltage (V OUT) will be equal to VIN.(A condition of high impedance exists with N-ch open drain output configurations.)②When input voltage (V IN) falls below detect voltage (V DF), output voltage (V OUT) will be equal to the ground voltage (V SS)level.③When input voltage (V IN) falls to a level below that of the minimum operating voltage (V MIN), output will becomeunstable. (As for the N-ch open drain product of XC61CN, the pull-up voltage goes out at the output voltage.)④When input voltage (V IN) rises above the ground voltage (V SS) level, output will be unstable at levels below theminimum operating voltage (V MIN). Between the V MIN and detect release voltage (V DR) levels, the ground voltage (V SS) level will be maintained.⑤When input voltage (V IN) rises above detect release voltage (V DR), output voltage (V OUT) will be equal to V IN.(A condition of high impedance exists with N-ch open drain output configurations.)⑥The difference between V DR and V DF represents the hysteresis range.●Timing Chart■NOTES ON USE1. Please use this IC within the stated absolute maximum ratings. For temporary, transitional voltage drop or voltage risingphenomenon, the IC is liable to malfunction should the ratings be exceeded.2. When a resistor is connected between the V IN pin and the power supply with CMOS output configurations, oscillation mayoccur as a result of voltage drops at R IN if load current (I OUT) exists. (refer to the Oscillation Description (1) below)3. When a resistor is connected between the V IN pin and the power supply with CMOS output configurations, irrespective ofN-ch open-drain output configurations, oscillation may occur as a result of through current at the time of voltage release even if load current (I OUT) does not exist. (refer to the Oscillation Description (2) below )4.Please use N-ch open drain output configuration, when a resistor R IN is connected between the V IN pin and power source.In such cases, please ensure that R IN is less than 10kΩ and that C is more than 0.1μF, please test with the actual device.(refer to the Oscillation Description (1) below)5. With a resistor R IN connected between the V IN pin and the power supply, the V IN pin voltage will be getting lower than thepower supply voltage as a result of the IC's supply current flowing through the V IN pin.6. In order to stabilize the IC's operations, please ensure that V IN pin input frequency's rise and fall times are more than 2 μ s/ V.7. Torex places an importance on improving our products and its reliability.However, by any possibility, we would request user fail-safe design and post-aging treatment on system or equipment.●Oscillation Description(1) Load current oscillation with the CMOS output configurationWhen the voltage applied at power supply, release operations commence and the detector's output voltage increases.Load current (I OUT) will flow at R L. Because a voltage drop (R IN x I OUT) is produced at the R IN resistor, located between the power supply and the V IN pin, the load current will flow via the IC's V IN pin. The voltage drop will also lead to a fall in the voltage level at the V IN pin. When the V IN pin voltage level falls below the detect voltage level, detect operations will commence. Following detect operations, load current flow will cease and since voltage drop at R IN will disappear, the voltage level at the V IN pin will rise and release operations will begin over again.Oscillation may occur with this " release - detect - release " repetition.Further, this condition will also appear via means of a similar mechanism during detect operations.(2) Oscillation as a result of through currentSince the XC61C series are CMOS IC S, through current will flow when the IC's internal circuit switching operates (duringrelease and detect operations). Consequently, oscillation is liable to occur as a result of drops in voltage at the throughcurrent's resistor (R IN) during release voltage operations. (refer to Figure 3)Since hysteresis exists during detect operations, oscillation is unlikely to occur.Power supply Power supplyXC61CSeries 100kΩ*■TYPICAL PERFORMANCE CHARACTERISTICS ●Low VoltageNote : Unless otherwise stated, the N-ch open drain pull-up resistance value is 100kΩ.XC61CSeries■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)●Low Voltage (Continued)(4) N-ch Driver Output Current vs. V DS0.20.40.60.8 1.0V DS (V)00.20.40.60.8 1.0V DS (V)0.20.40.60.8 1.0V DS (V)000.20.40.60.8 1.0 1.2 1.4V DS (V)ＸＣ６１ＣＣ０９０２(０.９Ｖ)O u t p u t C u r r e n t : I O U T (m A )O u t p u t C u r r e n t : I O U T (m A )O u t p u t C u r r e n t : I O U T (m A )O u t p u t C u r r e n t : I O U T (m A )ＸＣ６１ＣＣ１１０２(１.１Ｖ)ＸＣ６１ＣＣ１５０２(１.５Ｖ)ＸＣ６１ＣＣ１５０２(１.５Ｖ)(5) N-ch Driver Output Current vs. InputVoltage 00.51.01.52.02.51.02.03.04.05.0246810ＸＣ６１ＣＣ０９０２(０.９Ｖ)ＸＣ６１ＣＣ１１０２(１.１Ｖ)ＸＣ６１ＣＣ１５０２(１.５Ｖ)O u t p u t C u r r e n t : I O U T (m A )O u t p u t C u r r e n t : I O U T (m A )O u t p u t C u r r e n t : I O U T (m A )Input Voltage:V IN (V)Input Voltage: V IN (V)Input Voltage: V IN (V)(6) P-ch Driver Output Current vs. Input Voltage0123456246810120123456246810120123456ＸＣ６１ＣＣ０９０２(０.９Ｖ)ＸＣ６１ＣＣ１１０２　(１.１Ｖ)Input Voltage:V IN (V)Input Voltage:V IN (V)Input Voltage:V IN (V)O u t p u t C u r r e n t : I O U T (m A )O u t p u t C u r r e n t : I O U T (m A )O u t p u t C u r r e n t : I O U T (m A )ＸＣ６１ＣＣ１５０２(１.５Ｖ)000.20.40.60.81.0V DS (V)O u t p u t C u r r e n t : I O U T (m A )ＸＣ６１ＣＣ１１０２(１.１Ｖ)■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)●Standard Voltage00.51.01.52.02.53.03.500.51.01.52.02.53.03.500.51.01.52.02.53.03.52468100.51.01.52.02.53.03.50246810ＸＣ６１ＣＣ１８０２(１.８Ｖ）ＸＣ６１ＣＣ２７０２(２.７Ｖ)ＸＣ６１ＣＣ３６０２(３.６Ｖ)ＸＣ６１ＣＣ４５０２(４.５Ｖ)Input Voltage: V IN (V)Input Voltage: V IN (V)S u p p l y C u r r e n t : I S S (μA )S u p p l y C u r r e n t : I S S (μA )Input Voltage: V IN (V)Input Voltage: V IN (V)S u p p l y C u r r e n t : I S S (μA )S u p p l y C u r r e n t : I S S (μA )(2) Detect, Release Voltage vs. Ambient Temperature-50-250255075100Ambient Temperature :Ta (℃)-50-250255075100Ambient Temperature :Ta (℃)-50-250255075100Ambient Temperature :Ta (℃)4.44.54.64.7-50-250255075100Ambient Temperature :Ta (℃)ＸＣ６１ＣＣ１８０２(１.８Ｖ)ＸＣ６１ＣＣ２７０２(２.７Ｖ)ＸＣ６１ＣＣ４５０２(４.５Ｖ)ＸＣ６１ＣＣ３６０２(３.６Ｖ)D e t e c t ,R e l e a s e V o l t a g e :V D F ,V D R (V )D e t e c t ,R e l e a s e V o l t a g e :V D F ,V D R (V )D e t e c t ,R e l e a s e V o l t a g e :V D F ,V D R (V )D e t e c t ,R e l e a s e V o l t a g e :V D F ,V D R (V )(1) Supply Current vs. Input Voltage■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)●Standard Voltage (Continued)(3) Output Voltage vs. Input VoltageNote : The N-channel open drain pull up resistance value is 100k Ω.12301231234012341234501234512012ＸＣ６１ＣＮ１８０２（１.８V)ＸＣ６１ＣＮ２７０２（２.７Ｖ)Input Voltage: V IN (V)Input Voltage: V IN (V)O u t p u t V o l t a g e : V O U T (V )O u t p u t V o l t a g e : V O U T (V )O u t p u t V o l t a g e : V O U T (V )O u t p u t V o l t a g e : V O U T (V )ＸＣ６１ＣＮ４５０２(４.５V)ＸＣ６１ＣＮ３６０２(３.６V)Input Voltage: V IN (V)Input Voltage: V IN (V)(4) N-ch Driver Output Current vs. V DS24681000.5 1.0 1.5 2.0V DS (V)00.51.01.52.02.53.0V DS (V)0102030400.51.01.52.02.53.0V DS (V)ＸＣ６１ＣＣ１８０２(１.８Ｖ)ＸＣ６１ＣＣ２７０２(２.７V)ＸＣ６１ＣＣ３６０２(３.６Ｖ)O u t p u t C u r r e n t : I O U T (m A )O u t p u t C u r r e n t : I O U T (m A )O u t p u t C u r r e n t : I O U T (m A )O u t p u t C u r r e n t : I O U T (m A )Note : The N-ch open drain pull up resistance value is 100k Ω.■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)●Standard Voltage (Continued)(4) N-ch Driver Output Current vs. V DS200400600800100000.20.40.60.8 1.0V DS (V)200400600800100000.20.40.60.8 1.0V DS(V)200400600800100000.20.40.60.8 1.0V DS(V)200400600800100000.20.40.60.8 1.0V DS(V)O u t p u t C u r r e n t : I O U T (μA )O u t p u t C u r r e n t : I O U T (μA )O u t p u t C u r r e n t : I O U T (μA )O u t p u t C u r r e n t : I O U T (μA )ＸＣ６１ＣＣ１８０２(１.８V)ＸＣ６１ＣＣ２７０２（２.７V)ＸＣ６１ＣＣ３６０２(３.６V)ＸＣ６１ＣＣ４５０２(４.５V)(5) N-ch Driver Output Current vs. Input VoltageＸＣ６１ＣＣ１８０２(１.８V)ＸＣ６１ＣＣ２７０２(２.７V)O u t p u t C u r r e n t : I O U T (m A )O u t p u t C u r r e n t : I O U T (m A )O u t p u t C u r r e n t :I O U T (m A )O u t p u t C u r r e n t :I O U T (m A )Input Voltage: V IN (V)ＸＣ６１ＣＣ３６０２(３.６V)ＸＣ６１ＣＣ４５０２(４.５V)■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)●Standard Voltage (Continued)(6) P-ch Driver Output Current vs. Input Voltage051015051015246810051015246810051015246810ＸＣ６１ＣＣ１８０２(１.８V)ＸＣ６１ＣＣ２７０２(２.７V)ＸＣ６１ＣＣ４５０２(４.５V)Input Voltage:V IN (V)Input Voltage: V IN (V)Input Voltage: V IN (V)O u t p u t C u r r e n t :I O U T (m A )O u t p u t C u r r e n t :I O U T (m A )O u t p u t C u r r e n t : I O U T (m A )O u t p u t C u r r e n t : I O U T (m A )■PACKAGING INFORMATION●SSOT-24 ●SOT-23●SOT-890.35+0.15-0.10.05(.1)(.4)1.±.2■PACKAGING INFORMATION(Continued)●TO-92+0.35+0.35●TB TYPE ●TH TYPEMARK CONFIGURATION VOLTAGE (V)A CMOS 0.XB CMOS 1.XC CMOS 2.XD CMOS 3.XE CMOS 4.XF CMOS 5.X H CMOS 6.XMARK CONFIGURATION VOLTAGE (V)K N-ch 0.X L N-ch 1.X M N-ch 2.X N N-ch 3.X P N-ch 4.X R N-ch 5.X S N-ch 6.XMARK VOLTAGE (V)MARK VOLTAGE (V)0 X.0 5 X.5 1 X.1 6 X.6 2 X.2 7 X.7 3 X.3 8 X.8 4 X.4 9 X.9MARKDELAY TIMEPRODUCT SERIES3 No Delay TimeXC61Cxxx0xxx① represents integer of detect voltage and CMOS Output (XC61CC series)■MARKING RULE● SSOT-24, SOT-23, SOT-89①②④1234①②③④123④③②①123N-Channel Open Drain Output (XC61CN series)② represents decimal number of detect voltage③ represents delay time (Except for SSOT-24)④ represents production lot numberBased on the internal standard. (G, I, J, O, Q, W excluded)MARK② ③VOLTAGE (V)3 3 3.3 5 0 5.0MARKOUTPUT CONFIGURATIONC CMOS N N-chMARK DELAY TIME0 No delay MARK DETECT VOLTAGE ACCURACY 1 Within ± 1% (Semi-custom)2Within ± 2%MARK PRODUCTION YEAR5 20056 2006■MARKING RULE (Continued)⑥ represents a least significant digit of production year●TO-92⑦ represents production lot number0 to 9, A to Z repeated. (G, I, J, O, Q, W excluded) * No character inversion used.① represents output configuration②, ③ represents detect voltage (ex.)④ represents delay time⑤ represents detect voltage accuracyTO-92 (SIDE VIEW)。

CHIPHOMER TECHNOLOGY (SHANGHAI) LIMITEDCPT2610 数据手册单/双通道电容性触摸检测芯片September 2019目录CPT2610 数据手册 (1)目录 (2)图目录 (3)1概述 (4)2引脚 (5)2.1引脚排列 (5)2.2引脚说明 (6)3典型应用 (7)3.1双通道典型应用图 (7)3.2单通道典型应用图 (7)4功能描述 (8)4.1按键状态 (8)4.1.1按键输出有效电平选择 (8)4.1.2CPT2610SP8、CPT2610DN8 按键状态获取 (8)4.1.3CPT2610ST6、CPT2610DN6 按键状态获取 (8)4.2按键扫描模式 (8)4.3长时按键触发解除功能 (8)5电气特性 (9)6封装 (10)6.1SOP8L (10)6.2DFN2X2-8L (11)6.3SOT23-6L (12)6.4DFN1.6X1.6-6L (13)7订货信息 (14)8版本信息 (15)图目录图1CPT2610 SOP8L 引脚排列图 (5)图2CPT2610 SOT23-6L引脚排列图 (5)图3CPT2610 DFN1.6X1.6-6L引脚排列图 (5)图4CPT2610 DFN2X2-8L引脚排列图 (5)图5双通道触摸典型应用图 (7)图6单通道触摸典型应用图 (7)图7SOP8L封装尺寸图 (10)图8DFN2X2-8L封装尺寸图 (11)图9SOT23-6L封装尺寸图 (12)图10DFN1.6X1.6-6L封装尺寸图 (13)1 概述CPT2610是一款低功耗双通道/单通道电容检测芯片，具有高效的RF噪音抑制功能，能够准确识别手指触摸引起的微小电容变化，适用于用触摸按键替代机械按键等应用场合；具有实时的自校准和基线跟踪算法，能有效避免因环境因素变化而引起按键误触等情况；支持输出有效电平选择，以满足不同系统平台及应用的要求。

P I C16F630/676数据手册14 引脚闪存8 位CMOS 单片机2004 Microchip Technology Inc.DS40039C_CN请注意以下有关 Microchip 器件代码保护功能的要点：· · · Microchip 的产品均达到 Microchip 数据手册中所述的技术指标。

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CC6103/4具有斩波稳定功能的高精度， 低温漂锁存型霍尔效应开关概述CC6103/4是一个锁存型的霍尔效应开关IC ，采用先进的BiCMOS 制程制造，具有优异的温度稳定性和很高的抗机械应力性能，产品最高工作温度可以达到150℃。

CC6103/4采用动态失调消除技术以及芯进电子专利保护的温度补偿技术，大幅降低了由于封装应力，环境温度变化等因素造成的失调电压，使产品磁灵敏度持高度的一致性。

CC6103/4包含电源稳压模块，霍尔薄片，信号放大模块，动态失调消除模块以及带有限流保护的功率输出级。

内置的电源稳压模块可以让芯片工作在2.5V 至5.5V 电源电压范围。

当磁场南极靠近芯片CC6103TO / CC6104ST 丝印面，磁场强度达到阈值时，输出低电平。

当磁场北极靠近芯片CC6103TO / CC6104ST 丝印面，磁场强度达到阈值时，输出高电平；当磁场南极靠近芯片CC6103ST / CC6104TO 丝印面，磁场强度达到阈值时，输出高电平。

当磁场北极靠近芯片CC6103ST / CC6104TO 丝印面，磁场强度达到阈值时，输出低电平。

CC6103/4提供TO-92S 和SOT23-3两种封装，均为符合RoHS 规范，产品的使用环境温度范围为-40~150℃。

功能框图动态失调消除放大器预驱动采样保持比较器50KHzLPF基准电压霍尔单元GND特点◆ 开关点高度对称◆ 具有斩波稳定功能，批次之间的一致性好 ◆ 温度稳定性优异，可工作到150℃ ◆ 抗机械应力◆ ESD HBM 4000V 应用◆ 直流无刷马达 ◆ 速度检测 ◆ 线性位置检测 ◆角度检测名称 封装型号 备注 CC6103TO TO-92S 袋装，1000片/包 CC6103ST SOT23-3 卷盘，3000片/卷 CC6104TO TO-92S 袋装，1000片/包 CC6104STSOT23-3卷盘，3000片/卷开关输出 vs. 磁场极性VoutS poleV OHV OLB HB RPB OPN pole CC6103TO / 6104STVoutN poleV V OL 0B HB RP B OPS poleCC6103ST / 6104TO注意: 磁场加在芯片的丝印面管脚描述CC6103XXYYWW132V DD V OUTGND1236103V DDGND V OUTCC6104XXYYWW132V DD V OUTGND1236104V DDGNDV OUT名称 管脚编号 功能 TO-92SSOT23-3V DD 1 1 电源电压 GND 2 3 地 V OUT32输出参数符号数值单位电源电压V DD-0.3~5.5 V输出脚耐压V OUT-0.3~VDD+0.3 V磁场强度 B 无限制Gauss工作环境温度T A-40~150 ℃存储环境温度Ts -50至160 ℃ESD(HBM) 4000 V电气参数参数符号测试环境最小值典型值最大值单位电源电压V DD- 2.5 - 5.5 V静态电流I DD25℃，V DD=5.0V - 2 3 mA输出电流I OUT25℃，V DD=5.0V，纯阻性负载- - 50 mA 输出饱和压降V SAT25℃，I OUT=50mA - - 0.4 V上升时间tr R L=820Ω，C L=10pF - 1.0 - us下降时间tf R L=820Ω，C L=10pF - 2.5 - us磁参数参数符号测试环境最小值典型值最大值单位工作点B OP25℃15 30 45 Gauss释放点B RP25℃-45 -30 -15 Gauss迟滞B HYS25℃50 60 70 Gauss 典型应用电路静态电流vs. 工作电压磁感应点vs. 工作电压磁感应点vs. 温度封装信息(1)TO-92S package0.730.414.093.0214.991.270.431.02MAXHall 感应点位置1.442.01CC6103打标信息: 第一行: CC6103-产品名称 第二行: XXYYWW XX – 代码YY – 封装年份的后两位数 WW – 封装时的星期数CC6104打标信息: 第一行: CC6104-产品名称第二行: XXYYWW XX – 代码YY – 封装年份的后两位数 WW – 封装时的星期数注意: 所有单位均为毫米。

Low Voltage Detector With Built-in Delay CircuitBL8518DESCRIPTIONBL8518 is a series of high precision voltage detector with ultra-low current consumption (4.5uA typ. at Vin=3.0V) and a built-in delay circuit. It can work at very low voltage, which makes it perfect for system reset.BL8518 is composed of high precision voltage reference, comparator, delay circuit, output driver and resistor array. Internally preset detect voltage has a low temperature drift and requires no external trimming.Two type of output, CMOS and N-channel open-drain are available.BL8518 is available in small size SOT-23 package which is Pb free.FEATURES∙ High-Precision Detection Voltage: ±3% ∙ Detection Voltage: 2.63V and 2.93V(customized other voltages)∙ Built-in Power on Reset Delay time circuit:Refer to Selection Guide∙ Operating Voltage Range: 1.2V~6V ∙ Ultra-low current consumption:4.5uA typ. (at Vin=3.0V)∙ Two Output Forms: CMOS (Active Low) and N-channel open-drain (Active Low)APPLICATIONS∙ Power monitor for portable equipment suchas PDA,DSC,Mobile phone,Notebook,MP3 ∙ CPU and Logic Circuit Reset ∙ Battery Checker∙ Battery Back-up Circuit ∙ Power Failure DetectorTYPICAL APPLICATIONVELECTRICAL CHARACTERISTICS0 123 4 56123 456S u p p l y c u r r e n t (u A )Input Voltage(V)Detector threshold=2.93V-40℃25℃ 70℃ORDERING INFORMATION123456ABSOLUTE MAXIMUM RATINGNote:Exceed these limits to damage to the device.Exposure to absolute maximum rating conditions may affect device reliability. RECOMMENDED WORK CONDITIONSELECTRICAL CHARACTERISTICSBL8518CXXTR263DC/N(2.63V)BL8518CXXTR293DC/N(2.93V)ELECTRICAL CHARACTERISTICS BY OUTPUT DELAY TIMEBLOCK DIAGRAMVoutV DDN Channel Open DrainVssVoutV DDCMOS OutputFUNCTION DESCRIPTIONVssVoutDDHigh precision low temperature co-efficiency reference voltage is applied to the negative input of a comparator. Input voltage, divided by resistor array of Ra and Rb, is applied to the positive input of the comparator. Output of the comparator passes a delay circuit and a series of buffer to drive the output CMOS pair.VDET =VREF*(1+Ra/Rb)VssVssTEST CIRCUITS(1) Supply current test circuit(2) Detector threshold test circuitV SSVOUTLC9018V DDV INV OUT(3) NCH Drive Output Current Test Circuit(4) PCH Drive Output Current Test CircuitV V DSV - V DSDDBL8518BL8518TYPICAL PERFORMANCE CHARACTERISTICS1) Supply current VS. Input voltage3) Nch Driver Output Current VS. VDS5) PCH Driver Output Current vs. Input Current4) NCH Driver Output Current vs. Input Voltage0 1 23 4 5 6 0123 456S u p p l y c u r r e n t (u A )Input Voltage(V)Detector threshold=2.93V-40℃25℃ 70℃0 2 4 6 8 10 12 14 16 18 20 0.00.51.01.52.02.53.0O u t p u t C u r r e n t (m A )VDS(V)Detector threshold=2.93VVDD=2V VDD=1V 0 5101520 25123 4O u t p u t C u r r e n t (m A )Input Voltage Vin(V)Detector threshold=2.93V-40℃ 25℃ 70℃0 5 10 15 20 25 30 35 40 0123 4 5 67O u t p u t C u r r e n t (m A )Input Voltage Vin(V)Detector threshold=2.93VVds=0.5V Vds=1.0V Vds=1.5V Vds=2.0VPACKAGE LINE。