FDS6894A
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October 2001
©2001 Fairchild Semiconductor CorporationFDS6894A Rev C (W)FDS6894A
Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET
General Description
These N-Channel Logic Level MOSFETs are producedusing Fairchild Semiconductor’s advancedPowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintainsuperior switching performance.
These devices are well suited for low voltage andbattery powered applications where low in-line powerloss and fast switching are required.Features
• 8 A, 20 V.RDS(ON) = 17 mΩ @ VGS = 4.5 VRDS(ON) = 20 mΩ @ VGS = 2.5 VRDS(ON) = 30 mΩ @ VGS = 1.8 V
• Low gate charge (17 nC)
• High performance trench technology for extremelylow RDS(ON)
• High power and current handling capability
SD
SSSO-8DDD
GD2D2D1D1
S2G2S1G1
Pin 1SO-84
3
2
15
6
7
8Q1
Q2
Absolute Maximum Ratings TA=25oC unless otherwise noted
SymbolParameterRatingsUnits
VDSSDrain-Source Voltage20V
VGSSGate-Source Voltage± 8V
IDDrain Current– Continuous(Note 1a)8A
– Pulsed32
Power Dissipation for Dual Operation2
Power Dissipation for Single Operation(Note 1a)1.6
(Note 1b)1PD
(Note 1c)0.9W
TJ, TSTGOperating and Storage Junction Temperature Range–55 to +150°C
Thermal Characteristics
RθJAThermal Resistance, Junction-to-Ambient (Note 1a)78°C/W
RθJCThermal Resistance, Junction-to-Case(Note 1)40°C/W
Package Marking and Ordering Information
Device MarkingDeviceReel SizeTape widthQuantity
FDS6894AFDS6894A13’’12mm2500 unitsFDS6894A
Electrical CharacteristicsTA = 25°C unless otherwise noted
SymbolParameterTest ConditionsMinTypMaxUnits
Off Characteristics
BVDSSDrain–Source Breakdown VoltageVGS = 0 V,ID = 250 µA20V∆BVDSS ∆TJBreakdown Voltage TemperatureCoefficientID = 250 µA, Referenced to 25°C13mV/°C
IDSSZero Gate Voltage Drain CurrentVDS = 16 V,VGS = 0 VVDS = 16 V, VGS = 0 V, TJ = 55°C110µA
IGSSFGate–Body Leakage, ForwardVGS = 8 V,VDS = 0 V100nA
IGSSRGate–Body Leakage, ReverseVGS = – 8 V,VDS = 0 V–100nA
On Characteristics(Note 2)VGS(th)Gate Threshold VoltageVDS = VGS,ID = 250 µA0.60.81.5V∆VGS(th) ∆TJGate Threshold VoltageTemperature CoefficientID = 250 µA, Referenced to 25°C–3mV/°C
RDS(on)Static Drain–SourceOn–ResistanceVGS = 4.5 V,ID = 8 AVGS = 2.5 V,ID = 7 AVGS = 1.8 V,ID = 6 AVGS = 4.5 V, ID = 8 A,TJ = 125°C1316211817203025mΩ
ID(on)On–State Drain CurrentVGS = 4.5V,VDS = 5 V16A
gFSForward TransconductanceVDS = 5 V, ID = 8 A44S
Dynamic Characteristics
CissInput Capacitance1676pF
CossOutput Capacitance288pF
CrssReverse Transfer CapacitanceVDS = 10 V, V GS = 0 V,f = 1.0 MHz
146pF
Switching Characteristics(Note 2)td(on)Turn–On Delay Time1020ns
trTurn–On Rise Time1425ns
td(off)Turn–Off Delay Time3353ns
tfTurn–Off Fall TimeVDD = 10 V,ID = 1 A,VGS = 4.5 V,RGEN = 6 Ω
1222ns
QgTotal Gate Charge1724nC
QgsGate–Source Charge2.8nC
QgdGate–Drain ChargeVDS = 10 V, ID = 8 A,VGS = 4.5 V
3.3nC
Drain–Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain–Source Diode Forward Current1.3A
VSDDrain–Source Diode ForwardVoltageVGS = 0 V,IS = 1.3 A(Note 2)0.71.2V
Notes:1.RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface ofthe drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W whenmounted on a 0.5in2pad of 2 oz copperb) 125°C/W whenmounted on a 0.02in2 pad of 2 ozcopperc) 135°C/W when mounted on aminimum mounting pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%FDS6894A
Typical Characteristics
01020304050
00.511.522.533.5VDS, DRAIN TO SOURCE VOLTAGE (V)ID, DRAIN CURRENT (A)VGS = 4.5V
1.8V2.5V
2.0V3.0V
0.811.21.41.61.82
01020304050ID, DIRAIN CURRENT (A)RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 1.8V
4.5V 3.0V 2.5V
3.5V 2.0V
Figure 1. On-Region Characteristics.Figure 2. On-Resistance Variation withDrain Current and Gate Voltage.
0.60.811.21.41.6
-50-250255075100125150TJ, JUNCTION TEMPERATURE (oC)RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCEID = 8AVGS = 4.5V
0.010.0150.020.0250.030.0350.040.045
12345VGS, GATE TO SOURCE VOLTAGE (V)RDS(ON), ON-RESISTANCE (OHM)ID = 4A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation withTemperature.Figure 4. On-Resistance Variation withGate-to-Source Voltage.
051015202530
0.50.81.11.41.72VGS, GATE TO SOURCE VOLTAGE (V)ID, DRAIN CURRENT (A)TA = -55oC25oC
125oCVDS = 5V
0.00010.0010.010.1110
00.20.40.60.81VSD, BODY DIODE FORWARD VOLTAGE (V)IS, REVERSE DRAIN CURRENT (A)VGS = 0V
TA = 125oC
25oC
-55oC
Figure 5. Transfer Characteristics.Figure 6. Body Diode Forward Voltage Variationwith Source Current and Temperature.FDS6894A
