电子元器件ZXCT1081中文资料_数据手册_IC数据表

ZXCT1081HIGH VOLTAGE HIGH-SIDE CURRENT MONITORDescriptionThe ZXCT1081 is a high side current sense monitor with a gain of 10 and a voltage output. Using this device eliminates the need to disrupt the ground plane when sensing a load current.The wide input voltage range of 40V down to as low as 3V make it suitable for a range of applications; including systems operating from industrial 24-28V rails and power supplies.Pin AssignmentsFeatures• 3V to 40V continuous high side voltage • Accurate high-side current sensing • Output voltage scaling x10 •4.5V to 12V V CC range• Low quiescent current:o 80 μA supply pino 30 μA I SENSE +• SOT23-5 package • -40°C to 125°C ambient temperature rangeApplications• Automotive current measurement• Industrial applications current measurement • Battery management • Over current monitor • Power management • Power adaptersTypical Application CircuitV SENSE-SENSE+V CC GND OUTZXCT1081Pin DescriptionPin Name Description1 VCC This is the analogue supply and provides power to internal circuitry2 GND Ground pin3 OUT Output voltage pin. NMOS source follower with 20μA bias to ground4 SENSE+ This is the positive input of the current monitor and has an input range from 40V(60V transient) down to 3V. The current through this pin varies with differential sensevoltage5 SENSE-This is the negative input of the current monitor and has an input range from 40V(60V transient) down to 3VAbsolute Maximum RatingsParameter Rating UnitContinuous Voltage on SENSE+ and SENSE- -0.6 and 45 V Transient Voltage on SENSE+ and SENSE- -0.6 and 65 V Voltage On All Other Pins -0.6 and 14 VDifferential Sense Voltage, V SENSE800 mV Operating Temperature -40 to 125 °C Storage Temperature -55 to 150 °C Maximum Junction Temperature 125 °CPackage Power Dissipation 300 @ T A = 25°C (de-rate to zero at 125°C)mWOperation above the absolute maximum rating may cause device failure. Operation at the absolute maximum ratings, for extended periods, may reducedevice reliabilityRecommended Operating ConditionsSymbol Parameter Min Max Units V IN Common-Mode Sense+ Input Range 3 40 V V CC Supply Voltage Range4.5 12 V V SENSE Differential Sense Input Voltage Range 0 0.15 V V OUT Output Voltage Range 0 1.5 V T JAmbient Temperature Range-40125°CElectrical Characteristics (Test conditions: T A = 25°C, V IN = 12V, V CC = 5V, V SENSE (a) = 100mV unless otherwise stated)Symbol Parameter ConditionMin.Typ. Max.UnitI CC VCC Supply Current V CC = 12V 40 80 120 µA I SENSE +SENSE+ Input Current 15 30 60 µA I SENSE -SENSE- Input Current 10 40 80 nAV O(0) Zero V SENSE (a) error (b) V SENSE (a)= 0V0 35 mV V O(10) Output Offset Voltage (c) V SENSE (a)= 10mV-30 +30 mV Gain ΔV OUT /ΔV SENSE (a) V SENSE (a)= 10mV to 150mV9.95 10 10.05 V OUT TC (d)V OUT Variation with Temperature30 ppm/°C A CCTotal Output Error -3 3 % I OH Output Source Current V OUT = 30mV 1 mA I OL Output Sink Current V OUT = +30mV20 µA PSRR VCC Supply Rejection Ration V CC = 4.5V to 12V 54 60 dB CMRR Common-Mode Sense Rejection Ratio V IN + 40V to 3V 60 75 dBBW -3dB Small Signal Bandwidth V SENSE (a)(AC) = 10mV pp50 kHz Notes:(a) VSENSE = "V SENSE +" - "V SENSE -"(b) The ZXCT1081 operates from a positive power rail and the internal voltage-current converter current flow is unidirectional; these result in the output offset voltage for V SENSE = 0V always being positive.(c) For V SENSE > 10mV, the internal voltage-current converter is fully linear. This enables a true offset to be defined and used. V O(10) is expressed as the variance about an output voltage of 100mV>.(d)Temperature dependent measurements are extracted from characterization and simulation results.Typical Operating Conditions (Cont.)Application InformationThe ZXCT1081 has been designed to allow it to operate with 5V supply rails while sensing common mode signals up to 40V. This makes it well suited to a wide range of industrial and power supply monitoring applications that require the interface to 5V systems while sensing much higher voltages.To allow this its VCC pin can be used independently of SENSE+.Figure 1 shows the basic configuration of the ZXCT1081.VFigure 1 Typical Configuration of ZXCT1081Load current from the input is drawn through R SENSE developing a voltage V SENSE across the inputs of the ZXCT1081.The internal amplifier forces V SENSE across internal resistance R SH causing a current to flow through MOSFET M1. This current is then converted to a voltage by R G . A ratio of 10:1 between R G and R SH creates the fixed gain of 10. The output is then buffered by the unity gain buffer.The gain equation of the ZXCT1081 is:V OUT = I L R SENSE x 1 = x R SENSE x 10The maximum recommended differential input voltage, V SENSE , is 150mV; it will however withstand voltages up to 800m Ω. This can be increased further by the inclusion of a resistor, R LIM , between SENSE- pin and the load; typical value is of the order of 10k .R G R SHFigure 2 Protection/Error Sources for ZXCT1081Capacitor CD provides high frequency transient decoupling when used with R LIM; typical values are of the order 10pF.For best performance R SENS E should be connected as close to the SENSE+ (and SENSE ) pins; minimizing any series resistance with R SENSE.When choosing appropriate values for R SENSE a compromise must be reached between in-line signal loss (including potential power dissipation effects) and small signal accuracy.Higher values for R SENSE gives better accuracy at low load currents by reducing the inaccuracies due to internal offsets. For best operation the ZXCT1081 has been designed to operate with V SENSE of the order of 50mV to 150mV.Current monitors' basic configuration is that of a unipolar voltage to current to voltage converter powered from a single supply rail. The internal amplifier at the heart of the current monitor may well have a bipolar offset voltage but the output cannot go negative; this results in current monitors saturating at very low sense voltages.As a result of this phenomenon the ZXCT1081 has been specified to operate in a linear manner over a V SENSE range of 10mV to 150mV range, however it will still be monotonic down to V SENSE of 0V.It is for this very reason that Zetex has specified an input offset voltage (V O(10)) at 10mV. The output voltage for any V SENSE voltage from 10mV to 150mV can be calculated as follows:V OUT = (V SENSE) xG + V O(10)Alternatively the load current can be expressed as:I L = V OUT – V O(10) GxR SENSEPackage Outline – SOT23-5DIMMillimeters Inches Min Max Min MaxA 0.90 1.45 0.03540.0570A1 0.00 0.15 0.00 0.0059 A2 0.90 1.3 0.0354 0.0511b 0.20 0.50 0.00780.0196C 0.09 0.26 0.00350.0102D 2.70 3.10 0.10620.1220E 2.20 3.20 0.08660.1181E1 1.30 1.80 0.0511 0.0708e 0.95REF 0.0374REF e1 1.90REF 0.0748REF L 0.10 0.60 0.00390.0236a° 0 30 0 30 Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches分销商库存信息: DIODESZXCT1081E5TA。

ZXCT1010Enhanced high-side current monitorDescriptionOrdering informationThe ZXCT1010 is a high side current sense monitor. Using this device eliminates the need to disrupt the ground plane when sensing a load current.t is an enhanced version of the ZXCT1009offering reduced typical output offset and improved accuracy at low sense voltage.The wide input voltage range of 20V down to as low as 2.5V make it suitable for a range of applications. A minimum operating current of just 4␮A, combined with its SOT23-5 package make suitable for portable battery equipment.Features•Low cost, accurate high-side current sensing•Output voltage scaling •Up to 2.5V sense voltage • 2.5V – 20V supply range •300nA typical offset current • 3.5␮A quiescent current •1% typical accuracy •SOT23-5 packageApplications•Battery chargers •Smart battery packs •DC motor control •Over current monitor •Power management•Programmable current sourcePinout informationTypical application circuitDevicePackage Device marking Reel size (inches)Tape width (mm)Quantity per reel ZXCT1010E5TASOT23-5101783000https:///Pin informationAbsolute maximum ratingsOperation above the absolute maximum rating may cause device failure. Operation at the absolute maximum ratings, for extended periods, may reduce device reliability.Pin Name Description 1N/C Not connection2GND Ground connection3I OUTOutput current, proportional to V IN - V LOAD4V SENSE+Supply voltage5V SENSE-Connection to load/batteryVoltage on any pin (relative to GND pin)-0.6 to 20V (relative to GND)Continuous output current 25mAContinous sense voltageV IN + 0.5V > V SENSE > V IN - 5V Ambient operating temperature range -40 to 85°C Storage temperature -55 to 150°C Package power dissipation T amb = 25°C SOT23-5300mWhttps:///Electrical characteristicsTest conditions T amb = 25°C, V IN = 5V, R OUT = 100⍀NOTES:(a)Includes input offset voltage contribution (b)V SENSE = V IN -V LOAD(c)-20dBm = 63mVp-p into 50⍀Symbol ParameterConditionsLimits UnitMin.Typ.Max.V IN V CC range 2.520V I OUT (a)Output currentV SENSE = 0V 00.310␮A V SENSE = 10mV 85100115␮A V SENSE = 100mV 0.975 1.00 1.025mAV SENSE = 200mV 1.95 2.00 2.05mA V SENSE = 1V9.710.010.3mA I Q Ground pin current V SENSE = 0V3.58␮A V SENSE (b)Sense voltage2500mV I SENSE-V SENSE- input current 100nAAcc AccuracyR SENSE = 0.1⍀ V SENSE = 200mV-2.52.5%Gm Transconductance, I OUT /V SENSE 10000␮A/VBWBandwidthRF P IN = -20dBm (c)V SENSE = 10mV DC 300kHz VSENSE= 100mV DC 2MHzhttps:///Typical characteristicsPower dissipationThe maximum allowable power dissipation of the device Array for normal operation (P max), is a function of the packagejunction to ambient thermal resistance (⍜ja), maximumjunction temperature (Tj max), and ambient temperature(T amb), according to the expression:Pmax = (Tj max – T amb) / ⍜jaThe device power dissipation, P D is given by theexpression:P D=I OUT.(V IN-V OUT) WattsApplications informationThe following lines describe how to scale a load current to an output voltage.V SENSE = V IN - V LOADV OUT = 0.01 x V SENSE x R OUT(1)For example:https:/// A 1A current is to be represented by a 100mV output voltage:1Choose the value of R SENSE to give 50mV > V SENSE > 500mV at full load.For example V SENSE = 100mV at 1.0A. R SENSE = 0.1/1.0 => 0.1⍀.2Choose R OUT to give V OUT = 100mV, when V SENSE = 100mV.Rearranging (1)for R OUT gives:R OUT = V OUT /(V SENSE x 0.01)R OUT = 0.1 / (0.1 x 0.01) = 100⍀Schematic diagramTypical circuit applicationWhere R LOAD represents any load including DC Array motors, a charging battery or further circuitrythat requires monitoring, R SENSE can beselected on specific requirements of accuracy,size and power rating.Li-Ion charger circuitThe figure below shows the ZXCT1010 supporting the Benchmarq bq2954 charge managementIC. Most of the support components for the bq2954 are omitted for clarity. This design also usesthe Zetex FZT789A high current Super-␤ PNP as the switching transistor in the DC-DC step downconverter and the FMMT451 as the drive NPN for the FZT789A. The circuit can be configured to https:///charge up to four Li-Ion cells at a charge current of 1.25A. Charge can be terminated on maximumvoltage, selectable minimum current, or maximum time out. Switching frequency of the PWMloop is approximately 120kHz.Bi-directional current sensingThe ZXCT1010 can be used to measure current bi-Array directionally, if two devices are connected as shownopposite.If the voltage V1 is positive with respect to the voltage V2the lower device will be active, delivering a proportionaloutput current to R OUT. Due to the polarity of the voltageacross Rsense, the upper device will be inactive and will notcontribute to the current delivered to R OUT. When V2 is morepositive than V1, current will be flowing in the oppositedirection, causing the upper device to be active instead.Non-linearity will be apparent at small values of V SENSE dueto offset current contribution. Devices can use separateoutput resistors if the current direction is to be monitoredindependently.https:///Bi-directional transfer functionPCB trace shunt resistor for low cost solution The figure opposite shows output characteristics of the device when using a PCB resistive trace for a low cost solution in replacement for a conventional shunt resistor. The graph shows the linear rise in voltage across the resistor due to the PTC of the material and demonstrates how this rise in resistance value over temperature compensates for the NTC of the device. The figure below shows a PCB layout suggestion.The resistor section is 25mm x 0.25mm giving approximately 150mW using 1oz copper. The data for the normalised graph was obtained using a 1A load current and a 100W output resistor. An electronic version of the PCB layout is available at /isenseLayout shows area of shunt resistor compared to ZSOT23-5package (not actual size).https:///https:///Intentionally left blankPackage outline - SOT23-5Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inchesDIM MillimetersInchesMin.Max.Min.Max.A 0.90 1.450.03540.0570A10.000.150.000.0059A20.90 1.300.03540.0511b 0.200.500.00780.0196C 0.090.260.00350.0102D 2.70 3.100.10620.1220E 2.20 3.200.08660.1181E1 1.301.800.05110.0708e 0.95 REF 0.0374 REF e1 1.90 REF0.0748 REFL 0.100.600.00390.0236a°0°30°0°30°https:///。

ZXCT1080High voltage high-side current monitorDescriptionOrdering informationThe ZXCT1080 is a high side current sense monitor with a gain of 10 and a voltage output. Using this device eliminates the need to disrupt the ground plane when sensing a load current.The wide input voltage range of 60V down to as low as 3V make it suitable for a range of applications; including systems operating from industrial 24-28V rails and -48V rails.The separate supply pin (V CC ) allows the device to continue functioning under short circuit conditions, giving an end stop voltage at the output.The ZXCT1080 has an extended ambient operating temperature range of -40°C to 125°C enabling it to be used in a wide range of applications including automotive.Features•3V to 60V continuous high side voltage •Accurate high-side current sensing •-40 to 125°C temperature range •Output voltage scaling x10• 4.5V to 12V V CC range •Low quiescent current:•70µA supply pin •50µA I SENSE+•SOT23-5 package Applications•Industrial applications current measurement •Battery management •Over current monitor •Power management•Automotive current measurementPin connectionsTypical application circuitDevicePackage Part mark Reel size (inches)Tape width (mm)Quantity perreelZXCT1080E5TASOT23-51080783000https://Absolute maximum ratingsContinuous voltage on S- and S+-0.6 and 65V Voltage on all other pins-0.6V and +14VDifferential sense voltage, V SENSE 800mV Operating temperature -40 to 125°C Storage temperature-55 to 150°C Maximum junction temperature 125°CPackage power dissipation300mW * at T A = 25°COperation above the absolute maximum rating may cause device failure. Operation at the absolute maximum ratings, for extended periods, may reduce device reliability.V SENSE is defined as the differential voltage between S+ and S- pins.*Assumes ⍜JA = 420°C/WRecommended operating conditionsPin function tableParameterMin.Max.Units V IN Common-mode sense+ input range 360V V CCSupply voltage range4.512V V SENSE Differential sense input voltage range 00.15V V OUT Output voltage range 0 1.5V T AAmbient temperature range-40125°CPin Name Description1V CC This is the analogue supply and provides power to internal circuitry 2GND Ground pin3OUT Output voltage pin. NMOS source follower with 20µA bias to ground 4S+This is the positive input of the current monitor and has an input range from 60V down to 3V. The current through this pin varies with differential sense voltage5S-This is the negative input of the current monitor and has an input range from 60V down to 3Vhttps://Electrical characteristicsTest conditions T A = 25°C, V IN = 12V, V CC = 5 V, V SENSE (a) = 100mV unless otherwise stated.NOTES:(a)V SENSE = "V SENSE+" - "V SENSE-"(b)The ZXCT1080 operates from a positive power rail and the internal voltage-current converter current flow is unidirectional; these result in the output offset voltage for V SENSE = 0V always being positive.(c)For V SENSE > 10mV, the internal voltage-current converter is fully linear. This enables a true offset to be defined and used. V O(10) is expressed as the variance about an output voltage of 100mV>(d)Temperature dependent measurements are extracted from characterization and simulation results.(e)All Min and Max specifications over full temperature range are guaranteed by design and characterisationSymbol ParameterConditions T A Min (e).Typ.Max (e).Units I CC V CC supply current V CC = 12V, V SENSE (a) = 0V 25°C 4080120µAfull range 145I S+S+ input current V SENSE (a) = 0V25°C 152742µA full range 60I S-S- input current25°C 154080nA V O(0)Zero V SENSE (a) error (b)25°C 035mV V O(10)Output offset voltage (c)V SENSE (a) = 10mV 25°C -25+25mV full range -55+55Gain⌬V OUT /⌬V SENSE (a)V SENSE (a) = 10mV to150mV 25°C 9.91010.1V/V full range9.810.2V OUT TC (d)V OUT variation withtemperature 30ppm/°C Acc Total output error -33%I OH Output source current⌬V OUT = -30mV 1mA I OL Output sink current⌬V OUT = +30mV20µA PSRR V CC supply rejection ratioV CC = 4.5V to 12V 5460dB CMRR Common-mode sense rejection ratio V IN = 60V to 3V 6880dB BW-3dB small signal bandwidthV SENSE (a) (AC) = 10mV PP500kHz https://Typical characteristicsTest conditions unless otherwise stated: T A = 25°C, V CC = 5V, V SENSE+ =12V, V SENSE = 100mVTypical characteristicsTest conditions unless otherwise stated: T A = 25°C, V CC = 5V, V SENSE+ =12V, V SENSE = 100mVTypical characteristicsTest conditions unless otherwise stated: T A = 25°C, V CC = 5V, V SENSE+ =12V, V SENSE = 100mVhttps://Application informationThe ZXCT1080 has been designed to allow it to operate with 5V supply rails while sensing common mode signals up to 60V. This makes it well suited to a wide range of industrial and power supply monitoring applications that require the interface to 5V systems while sensing much higher voltages.To allow this its V CC pin can be used independently of S+.Figure 1 shows the basic configuration of the ZXCT1080.Figure 1Typical configuration of ZXCT1080Load current from the input is drawn through R SENSE developing a voltage V SENSE across the inputs of the ZXCT1080.The internal amplifier forces V SENSE across internal resistance R GT causing a current to flow through MOSFET M1. This current is then converted to a voltage by R G . A ratio of 10:1 between R G and R GT creates the fixed gain of 10. The output is then buffered by the unity gain buffer.The gain equation of the ZXCT1080 is:The maximum recommended differential input voltage, V SENSE , is 150mV; it will howeverwithstand voltages up to 800m ⍀. This can be increased further by the inclusion of a resistor, R LIM ,between S- pin and the load; typical value is of the order of 10k .V OUT I L R SENSE R GRGT---------1×I L R SENSE ×10×==https://Figure 2Protection/error sources for ZXCT1080Capacitor C D provides high frequency transient decoupling when used with R LIM ; typical values are of the order 10pFFor best performance R SENSE should be connected as close to the S+ (and SE NSE ) pins;minimizing any series resistance with R SENSE .When choosing appropriate values for R SENSE a compromise must be reached between in-line signal loss (including potential power dissipation effects) and small signal accuracy.Higher values for R SENSE gives better accuracy at low load currents by reducing the inaccuracies due to internal offsets. For best operation the ZXCT1080 has been designed to operate with V SENSE of the order of 50mV to 150mV.Current monitors' basic configuration is that of a unipolar voltage to current to voltage converter powered from a single supply rail. The internal amplifier at the heart of the current monitor may well have a bipolar offset voltage but the output cannot go negative; this results in current monitors saturating at very low sense voltages.As a result of this phenomenon the ZXCT1080 has been specified to operate in a linear manner over a V SENSE range of 10mV to 150mV range, however it will still be monotonic down to VSENSE of 0V.It is for this very reason that Zetex has specified an input offset voltage (V O(10)) at 10mV. The output voltage for any V SENSE voltage from 10mV to 150mV can be calculated as follows:Alternatively the load current can be expressed as:V OUT V SENSE ()xG V O 10()+=I L V OUT V O 10()–()GxR SENSE------------------------------------------=https://Package details - SOT23-5Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inchesDIM MillimetersInchesMin.Max.Min.Max.A - 1.00-0.0393A10.010.100.00030.0039A20.840.900.03300.0354b 0.300.450.01180.0177c 0.120.200.00470.0078D 2.90 BSC 0.114 BSCE 2.80 BSC 0.110 BSC E1 1.60 BSC 0.062 BSC e 0.95 BSC 0.0374 BSC e1 1.90 BSC0.0748 BSCL 0.300.500.01180.0196L20.25 BSC 0.010 BSC a°4°12°4°12°https://ZXCT1080DefinitionsProduct changeZetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders.Applications disclaimerThe circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract,tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract,opportunity or consequential loss in the use of these circuit applications, under any circumstances.Life supportZetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:A. Life support devices or systems are devices or systems which:1.are intended to implant into the bodyor 2.support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in thelabelling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected tocause the failure of the life support device or to affect its safety or effectiveness.ReproductionThe product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned.Terms and ConditionsAll products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.Quality of productZetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: /salesnetworkZetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.ESD (Electrostatic discharge)Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.Devices suspected of being affected should be replaced.Green complianceZetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions.All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives.Product status key:“Preview”Future device intended for production at some point. Samples may be available“Active”Product status recommended for new designs“Last time buy (LTB)”Device will be discontinued and last time buy period and delivery is in effect“Not recommended for new designs”Device is still in production to support existing designs and production“Obsolete”Production has been discontinuedDatasheet status key:“Draft version”This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice.“Provisional version”This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.However, changes to the test conditions and specifications may occur, at any time and without notice.“Issue”This term denotes an issued datasheet containing finalized specifications. However, changes tospecifications may occur, at any time and without notice.https://。

NCP1081Integrated High PowerPoE-PD Interface & DC-DC Converter ControllerIntroductionThe NCP1081 is a member of ON Semiconductor’s high power HIPO t Power over Ethernet Powered Device (PoE−PD) product family and represents a robust, flexible and highly integrated solution targeting demanding medium and high power Ethernet applications. It combines in a single unit an enhanced PoE−PD interface supporting the IEEE802.3af and the upcoming draft IEEE802.3at (D3.0) standard and a flexible and configurable DC−DC converter controller.The NCP1081’s exceptional capabilities offer new opportunities for the design of products powered directly over Ethernet lines, eliminating the need for local power adaptors or power supplies and drastically reducing the overall installation and maintenance cost. ON Semiconductor’s unique manufacturing process and design enhancements allow the NCP1081 to deliver up to 25.5 W for the draft IEEE802.3at (D3.0) standard and up to 40 W for proprietary high power PoE applications. The NCP1081 enables the draft IEEE802.3at (D3.0) and implements a two event physical layer classification. Additional proprietary classification procedures support high power power sourcing equipment (PSE) on the market. The unique high power features leverage the significant cost advantages of PoE−enabled systems to a much broader spectrum of products in emerging markets such as industrial ethernet devices, PTZ and Dome IP cameras, RFID readers, MIMO WLAN access points, high end V oIP phones, notebooks, etc.The integrated current mode DC−DC controller facilitates isolated and non−isolated fly−back, forward and buck converter topologies. It has all the features necessary for a flexible, robust and highly efficient design including programmable switching frequency, duty cycle up to 80 percent, slope compensation, and soft start−up.The NCP1081 is fabricated in a robust high voltageprocess and integrates a rugged vertical N−channel DMOS with a low loss current sense technique suitable for the most demanding environments and capable of withstanding harsh environments such as hot swap and cable ESD events. The NCP1081 complements ON Semiconductor’s ASSP portfolio in industrial devices and can be combined with stepper motor drivers, CAN bus drivers and other high−voltage interfacing devices to offer complete solutions to the industrial and security market.Powered Device Interface•Supporting the IEEE802.3af and the upcoming draft IEEE802.3at (D3.0) standard•Supports draft IEEE802.3at (D3.0) Two Event Layer 1 classification•High power Layer 1 classification indicator •Extended power ranges up to 40 W •Programmable classification current •Adjustable under voltage lock out •Programmable inrush current limit •Programmable operational current limit up to 1100mA for extended power ranges•Over−temperature protection•Industrial temperature range −40°C to 85°C with full operation up to 150°C junction temperature•0.6 ohm hot−swap pass−switch with low loss current sense technique•Vertical N−channel DMOS pass−switch offers the robustness of discrete MOSFETs with integrated temperature controlTSSOP−20 EPDE SUFFIXCASE 948ABSee detailed ordering and shipping information in the packagedimensions section on page 2 of this data sheet.ORDERING INFORMATIONNCP1081 = Specific Device CodeXXXX= Date CodeY= Assembly LocationZZ= Traceability CodeDC −DC Converter Controller•Current mode control•Supports isolated and non −isolated DC −DC converter applications•Internal voltage regulators•Wide duty cycle range with internal slope compensation circuitry•Programmable oscillator frequency •Programmable soft −start time(Top View)PIN DIAGRAMExposed Pad1SS FB COMP VDDL VDDH GATE ARTNnCLASS_AT CS OSCVPORTP CLASS UVLO INRUSH ILIM1VPORTN1RTN VPORTN2TEST1TEST2Ordering InformationPart NumberPackage Shipping Configuration †Temperature Range NCP1081DEG TSSOP −20 EP (Pb −Free)74 units / Tube −40°C to 85°C NCP1081DER2GTSSOP −20 EP (Pb −Free)2500 / Tape & Reel−40°C to 85°C†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.VPORTN1,2VPORTPCLASS INRUSH ILIM1VDDHnCLASS_AT VDDLRTNARTNSSFB COMP CSGATEOSCFigure 1. NCP1081 Block DiagramFigure 2. Isolated Fly−back ConverterFigure 2 shows the integrated PoE−PD switch and DC−DC controller configured to work in a fully isolated application. The output voltage regulation is accomplished with an external opto−coupler and a shunt regulator (Z1).Figure 3. Non−Isolated Fly−back ConverterFigure 3 shows the integrated PoE−PD and DC−DC controller configured in a non−isolated fly−back configuration. A compensation network is inserted between the FB and the COMP pin for overall stability of the feedback loop.Figure 4. Non−Isolated Fly−back with Extra WindingFigure 4 shows the same non−isolated fly−back configuration as Figure 3, but adds a 12V auxiliary bias winding on the transformer to provide power to the NCP1081 DC−DC controller via its VDDH pin. This topology shuts off the current flowing from VPORTP to VDDH and therefore reduces the internal power dissipation of the PD, resulting in higher overall power efficiency.Figure 5. Non−Isolated Forward ConverterFigure 5 shows the NCP1081 used in a non−isolated forward topology.High Power ConsiderationsThe NCP1081 is designed to implement various configurations of high−power PoE systems including those based on the developing IEEE 802.3at standard. High power operation can be enabled by a Dual Event Layer 1 classification or a Single Event Layer 1 classification combined with a Layer 2 high power classification. The NCP1081 also supports proprietary designs capable of delivering 25 W to 40 W to the load in two−pair configurations. A separate application note describes these implementations (“NCP1081 High Power PoE Applications”).Table 1. Pin DescriptionsName Pin No.Type DescriptionVPORTP1Supply Positive input power. Voltage with respect to VPORTN1,2.6,8Ground Negative input power. Connected to the source of the internal pass−switch.VPORTN1VPORTN2RTN7Ground DC−DC controller power return. Connected to the drain of the internal pass−switch. It mustbe connected to ARTN. This pin is also the drain of the internal pass−switch.ARTN14Ground DC−DC controller ground pin. Must be connected to RTN as a single point ground connectionfor improved noise immunity.VDDH16Supply Output of the 9V LDO internal regulator. Voltage with respect to ARTN. Supplies the internalgate driver. VDDH must be bypassed to ARTN with a 1m F or 2.2m F ceramic capacitor withlow ESR.VDDL17Supply Output of the 3.3V LDO internal regulator. Voltage with respect to ARTN. This pin can beused to bias an external low−power LED (1mA max.) connected to nCLASS_AT, and canalso be used to add extra biasing current in the external opto−coupler. VDDL must be by-passed to ARTN with a 330nF or 470nF ceramic capacitor with low ESR.CLASS2Input Classification current programming pin. Connect a resistor between CLASS and VPORTN1,2. INRUSH4Input Inrush current limit programming pin. Connect a resistor between INRUSH and VPORTN1,2. ILIM15Input Operational current limit programming pin. Connect a resistor between ILIM1 andVPORTN1,2.UVLO3Input DC−DC controller under−voltage lockout input. Voltage with respect to VPORTN1,2. Connecta resistor−divider from VPORTP to UVLO to VPORTN1,2 to set an external UVLO threshold. GATE15Output DC−DC controller gate driver output pin.OSC11Input Internal oscillator frequency programming pin. Connect a resistor between OSC and ARTN. nCLASS_AT13Output,Active−low, open−drain Layer 1 dual−finger classification indicator.Open DrainCOMP18I/O Output of the internal error amplifier of the DC−DC controller. COMP is pulled−up internally toVDDL with a 5 k W resistor. In isolated applications, COMP is connected to the collector of theopto−coupler. Voltage with respect to ARTN.FB19Input DC−DC controller inverting input of the internal error amplifier. In isolated applications, the pinshould be strapped to ARTN to disable the internal error amplifier.CS12Input Current−sense input for the DC−DC controller. Voltage with respect to ARTN.SS20Input Soft−start input for the DC−DC controller. A capacitor between SS and ARTN determines thesoft−start timing.TEST19Input Digital test pin must always be connected to VPORTN1,2.TEST210Input Digital test pin must always be connected to VPORTN1,2.EP Exposed pad. Connected to VPORTN1,2 ground.Table 2. Absolute Maximum RatingsSymbol Parameter Min.Max.Units Conditions VPORTP Input power supply−0.372V Voltage with respect to VPORTN1,2RTN ARTN Analog ground supply 2−0.372V Pass−switch in off−state(Voltage with respect to VPORTN1,2)VDDH Internal regulator output−0.317V Voltage with respect to ARTNVDDL Internal regulator output−0.3 3.6V Voltage with respect to ARTNCLASS Analog output−0.3 3.6V Voltage with respect to VPORTN1,2INRUSH Analog output−0.3 3.6V Voltage with respect to VPORTN1,2ILIM1Analog output−0.3 3.6V Voltage with respect to VPORTN1,2UVLO Analog input−0.3 3.6V Voltage with respect to VPORTN1,2OSC Analog output−0.3 3.6V Voltage with respect to ARTNCOMP Analog input / output−0.3 3.6V Voltage with respect to ARTNFB Analog input−0.3 3.6V Voltage with respect to ARTNCS Analog input−0.3 3.6V Voltage with respect to ARTNSS Analog input−0.3 3.6V Voltage with respect to ARTNnCLASS_AT Analog output−0.3 3.6V Voltage with respect to ARTN TEST1TEST2Digital inputs−0.3 3.6V Voltage with respect to VPORTN1,2 Ta Ambient temperature−4085°CTj Junction temperature−150°CTj−TSD Junction temperature (Note 1)−175°C Thermal shutdown conditionT stg Storage Temperature−55150°CTθJA Thermal Resistance,Junction to Air (Note 2)37.6°C/W Exposed pad connected to VPORTN1,2 groundESD−HBM Human Body Model 3.5−kV per MIL−STD−883, Method 3015ESD−CDM Charged Device Model750−VESD−MM Machine Model300−VLU Latch−up±200−mA per JEDEC Standard JESD78 ESD−SYS System ESD (contact/air) (Note 3)8/15−kVStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.1.Tj−TSD allowed during error conditions only. It is assumed that this maximum temperature condition does not occur more than 1 hourcumulative during the useful life for reliability reasons.2.Mounted on a 1S2P (3 layer) test board with copper coverage of 25 percent for the signal layers and 90 percent copper coverage for theinner planes at an ambient temperature of 85°C in still air. Refer to JEDEC JESD51−7 for details.3.Surges per EN61000−4−2, 1999 applied between RJ−45 and output ground and between adapter input and output ground of the evaluationboard. The specified values are the test levels and not the failure levels.Recommended Operating ConditionsOperating conditions define the limits for functional operation and parametric characteristics of the device. Note that the functionality of the device outside the operating conditions described in this section is not warranted. Operating outside the recommended operating conditions for extended periods of time may affect device reliability.All values concerning the DC−DC controller, VDDH, VDDL, and nCLASS_A T blocks are with respect to ARTN. All others are with respect to VPORTN1,2 (unless otherwise noted).Table 3. Operating ConditionsSymbol Parameter Min.Typ.Max.Units Conditions INPUT SUPPLYVPORT Input supply voltage057V VPORT = VPORTP −VPORTN1,2 SIGNATURE DETECTIONVsignature Input supply voltage signature detectionrange1.49.5VRsignature Signature resistance (Note 4)23.7526.25k WOffset_current I_VportP + I_Rtn− 1.85m A VPORTP = RTN = 1.4 V Sleep_current I_VportP + I_Rtn−1525m A VPORTP = RTN = 9.5 V CLASSIFICATIONVcl Input supply voltage classification range1320.5VV_mark Mark event voltage range (VPORTP falling) 5.4−9.7VI_mark Current consumption I(VPORTP) + I(Rdet)in Mark Event range0.5− 2.0mA 5.4 V ≤ VPORT ≤ 9.5 VdR_mark Input signature during Mark Event (Note 7)−−12k W For information only Vreset Classification Reset range(VPORTP falling)4.3 4.95.4VIclass0Class 0: Rclass 10 k W (Note 6)0−4mA Iclass0 = I_VportP +I_RdetIclass1Class 1: Rclass 130 ohm (Note 6)9−12mA Iclass1 = I_VportP +I_RdetIclass2Class 2: Rclass 69.8 ohm (Note 6)17−20mA Iclass2 = I_VportP +I_RdetIclass3Class 3: Rclass 44.2 ohm (Note 6)26−30mA Iclass3 = I_VportP +I_RdetIclass4Class 4: Rclass 30.9 ohm (Note 6)36−44mA Iclass4 = I_VportP +I_RdetIclass5Class 5: Rclass 22.1 ohm (Notes 5 and 6)(for proprietary high power applications)50−60mA Iclass5 = I_VportP +I_RdetIDC class Internal current consumption duringclassification (Note 8)−600−m A For information only CLASSIFICATION INDICATORnCLASS_AT_i nCLASS_AT current source132027m ANCLASS_AT_pd NCLASS_AT pull down resistance130ohm For information only4.Test done according to the IEEE 802.3af 2 Point Measurement. The minimum probe voltages measured at the PoE−PD are 1.4V and 2.4V,and the maximum probe voltages are 8.5V and 9.5V.5.This extended classification range can be used with a PSE which also uses this classification range to deliver more current than specifiedby IEEE 802.3.6.Measured with an external Rdet of 25.5k W between VPORTP and VPORTN1,2, and for 13V < VPORT < 20.5V (with VPORT = VPORTP– VPORTN1,2).7.Measured with the 2 Point Measurement defined in the IEEE 802.3af standard with 5.4V and 9.5V the extreme values for V2 and V1.8.This typical current excludes the current in the Rclass and Rdet external resistors.UVLOVuvlo_on Default turn on voltage (VportP rising)−3840V UVLO pin tied toVPORTN1,2Vuvlo_off Default turn off voltage (VportP falling)29.532−V UVLO pin tied toVPORTN1,2Vhyst_int UVLO internal hysteresis−6−V UVLO pin tied toVPORTN1,2Vuvlo_pr UVLO external programming range25−50V UVLO pin connected to theresistor divider (R1 & R2).For information only Vhyst_ext UVLO external hysteresis−15−%UVLO pin connected to theresistor divider (R1 & R2) Uvlo_Filter UVLO on/off filter time−90−m S For information only PASS−SWITCH AND CURRENT LIMITSRon Pass−switch Rds−on−0.6 1.2ohm Max Ron specified atTj = 130°CI_Rinrush1Rinrush = 150 k W (Note 9)95125155mA Measured at RTN−VPORTN1,2 = 3 VI_Rinrush2Rinrush = 57.6 k W (Note 9)260310360mA Measured at RTN−VPORTN1,2 = 3 VI_Rilim1Rilim1 = 84.5 k W (Note 9)450510570mA Current limit thresholdI_Rilim2Rilim1 = 66.5 k W (Note 9)600645690mA Current limit thresholdI_Rilim3Rilim1 = 55.6 k W (Note 9)720770820mA Current limit thresholdI_Rilim4Rilim1 = 38.3 k W (Note 9)97011001230mA Current limit threshold INRUSH AND ILIM1 CURRENT LIMIT TRANSITIONVds_pgood VDS required for power good status0.81 1.2V RTN−VPORTN1,2 falling;Voltage with respect toVPORTN1,2Vds_pgood_hyst VDS hysteresis required for powergood status −8.2−V Voltage with respect toVPORTN1,29.The current value corresponds to the PoE−PD input current (the current flowing in the external Rdet and the quiescent current of the deviceare included).VDDH REGULATORVDDH_reg Regulator output voltage(Notes 10 and 11)Ivddh_load + Ivddl_load < 10 mAwith0 < Ivddl_load < 2.25 mA8.499.6VVDDH_Off Regulator turn−off voltage−VDDH_reg+ 0.5 V−V For information onlyVDDH_lim VDDH regulator current limit(Notes 10 and 11)13−26mAVDDH_Por_R VDDH POR level (rising)7.3−8.3VVDDH_Por_F VDDH POR level (falling)6−7VVDDH_ovlo VDDH over−voltage level (rising)16−18.5VVDDL REGULATORVDDL_reg Regulator output voltage(Notes 10 and 11)0 < lvddl_load < 2.25mAwithlvddh_load + Ivddl_load < 10 mA3.05 3.3 3.55VVDDL_Por_R VDDL POR level (rising)VDDL– 0.2−VDDL– 0.02VVDDL_Por_F VDDL POR level (falling) 2.5− 2.9VGATE DRIVERGate_Tr GATE rise time (10−90%)−−50ns Cload = 2 nF,VDDHreg = 9 VGate_Tf GATE fall time (90−10%)−−50ns Cload = 2 nF,VDDHreg = 9 VPWM COMPARATORVCOMP COMP control voltage range 1.3−3V For information only ERROR AMPLIFIERVbg_fb Reference voltage 1.15 1.2 1.25V Voltage with respect toARTNAv_ol DC open loop gain−80−dB For information onlyGBW Error amplifier GBW1−−MHz For information onlySOFT−STARTVss Soft−start voltage range− 1.15−VVss_r Soft−start low threshold (rising edge)0.350.450.55VIss Soft−start source current357m ACURRENT LIMIT COMPARATORCSth CS threshold voltage324360396mVTblank Blanking time−100−nS For information only OSCILLATORDutyC Maximum duty cycle−80%−Fixed internallyFrange Oscillator frequency range100−500kHzF_acc Oscillator frequency accuracy±25%10.Power dissipation must be considered. Load on VDDH and VDDL must be limited especially if VDDH is not powered by an auxiliary winding.11.Ivddl_load = current flowing out of the VDDL pin.Ivddh_load = current flowing out of the VDDH pin + current delivered to the Gate Driver (function of the frequency, VDDH voltage & MOSFET gate capacitance).Symbol Parameter Min.Typ.Max.Units Conditions CURRENT CONSUMPTIONIvportP1VPORTP internal currentconsumption (Note 12)− 2.5 3.5mA DC−DC controller offIvportP2VPORTP internal currentconsumption (Note 13)− 4.7 6.5mA DC−DC controller on THERMAL SHUTDOWNTSD Thermal shutdown threshold150−−°C Tj Tj = junction temperature Thyst Thermal hysteresis−15−°C Tj Tj = junction temperature THERMAL RATINGSTa Ambient temperature−40−85°CTj Junction temperature−−125150°C°CParametric values guaranteedMax 1000 hours12.Conditionsa.No current through the pass−switchb.DC−DC controller inactive (SS shorted to RTN)c.No external load on VDDH and VDDLd.VPORTP = 57 V13.Conditionsa.No current through the pass−switchb.Oscillator frequency = 100 kHzc.No external load on VDDH and VDDLd.Aux winding not usede.2 nF on GATE, DC−DC controller enabledf.VPORTP = 57 VDescription of Operation Powered Device InterfaceThe PD interface portion of the NCP1081 supports theIEEE 802.3af and draft IEEE802.3at (D3.0) definedoperating modes: detection signature, current source classification, inrush, and operating current limits. In orderto give more flexibility to the user and also to keep controlof the power dissipation in the NCP1081, both current limitsare configurable. The device enters operation once its programmable Vuvlo_on threshold is reached, andoperation ceases when the supplied voltage falls below theVuvlo_off threshold. Sufficient hysteresis and Uvlo filtertime are provided to avoid false power on/off cycles due totransient voltage drops on the cable.DetectionDuring the detection phase, the incremental equivalentresistance seen by the PSE through the cable must be in theIEEE 802.3af standard specification range (23.75k W to26.25k W) for a PSE voltage from 2.7V to 10.1V. In orderto compensate for the non−linear effect of the diode bridgeand satisfy the specification at low PSE voltage, theNCP1081 presents a suitable impedance in parallel with the25.5k W Rdet external resistor. For some types of diodes (especially Schottky diodes), it may be necessary to adjustthis external resistor.When the Detection_Off level is detected (typically11.5V) on VPORTP, the NCP1081 turns on its internal3.3V regulator and biasing circuitry in anticipation of the classification phase as the next step.ClassificationOnce the PSE device has detected the PD device, the classification process begins. The NCP1081 is fully capableof responding and completing all classification handshakingprocedures as described next.Classification Current Source GenerationIn classification, the PD regulates a constant currentsource that is set by the external resistor RCLASS value onthe CLASS pin. Figure 6 shows the schematic overview ofthe classification block. The current source is defined as:I class+V bgR class,(where V bg is1.2V)Figure 6. Classification Block DiagramThe NCP1081 can handle all defined types of classification, IEEE 802.3af, draft IEEE802.3at (D3.0) and proprietary classification.In the IEEE 802.3af standard the classification is performed with a Single Event Layer 1 classification. Depending on the current level set during that single event the power level is determined. The current draft IEEE802.3at (D3.0) allows two ways of classification which can also be combined. These two approaches enable higher power applications through a variety of PSE equipment.For power injectors and midspans a pure physical hardware handshake is introduced called Two Event Layer1 classification. This approach allows equipment that has no data link between PSE and PD to classify as high power.Since switches can establish a data link between PSE and PD, a software handshake is possible. This type of handshake is called Layer 2 classification (or Data Link Layer classification). It has the main advantage of having a finer power resolution and the ability for the PSE and PD to participate in dynamic power allocation.Table 4. Single and Dual Event Classification Standard Layer Handshake802.3af1Single event physical classification 802.3at1Two event physical classification 802.3at2Data−link (IP) communicationclassificationOne Event Layer 1 ClassificationAn IEEE 802.3af compliant PSE performs only One Event Layer 1 classification event by increasing the line voltage into the classification range only once.Two Event Layer 1 ClassificationA draft IEEE802.3at (D3.0) compliant PSE using this physical classification performs two classification events and looks for the appropriate response from the PD to check if the PD is draft IEEE802.3at (D3.0) compatible.The PSE will generate the sequence described in Figure7. During the first classification finger, the PSE will measure the classification current which should be 40mA if the PD is at compliant. If this is the case, the PSE will exit the classification range and will force the line voltage into the Mark Event range. Within this range, the PSE may check the non−valid input signature presented by the PD (using the two point measurement defined in the IEEE 802.3af standard). Then the PSE will repeat the same sequence with the second classification finger. A PD which has detected the sequence “Finger + Mark + Finger + Mark” knows the PSE is draft IEEE802.3at (D3.0) compliant, meaning the PSE will deliver more current on the port. (Note that a PSE draftIEEE802.3at (D3.0) compliant may apply more than two fingers, but the final result will be the same as two fingers).PSE Type identification:Figure 7. Hardware Physical Classification Event SequencenCLASS_AT IndicatorThe nCLASS_AT active low open drain output pin can be used to notify to the microprocessor of the powered device that the PSE performed a one or two event hardware classification. If a two event hardware classification has occured and once the PD application is supplied power by the NCP1081 DC −DC converter, the nCLASS_AT pin will be pulled down to ARTN by the internal low voltage NMOSswitch (ARTN is the ground connection of the DC −DC converter). Otherwise, nCLASS_AT will be disabled and will be pulled up to VDDL (3.3V typ) via an internal current source (20 m A typ) and via the external pull −up resistor.The following scheme illustrates how the nCLASS_AT pin may be configured with the processor of the powered device. An opto −coupler is used to guarantee full isolation between the Ethernet cable and the application.Figure 8. Isolated nClass_AT Communication with the Powered Device ApplicationAs soon as the application is powered by the DC −DC converter and completes initialization, the microprocessor should check if the NCP1081 detected a two event hardware classification by reading its digital input (pin IN1 in this example). If pin IN1 is low, the application knows power is supplied by a draft IEEE802.3at (D3.0) compliant PSE, and can deliver power up to the level specified by the draft IEEE802.3at (D3.0) standard.Otherwise the application will have to perform a Layer 2classification with the PSE. There are several scenarios for which the NCP1081 will not enable its nCLASS_AT pin:•The PSE skipped the classification phase.•The PSE performed a one event hardware classification (it can be a IEEE 802.3af or a draft IEEE802.3at (D3.0)compliant PSE with Layer 2 engine).•The PSE performed a two event hardware classification but it did not properly control the input voltage in the mark voltage window, (for example it crossed the reset range).Power ModeWhen the classification hand −shake is completed, the PSE and PD devices move into the operating mode.Under Voltage Lock Out (UVLO)The NCP1081 incorporates an under voltage lock out(ULVO) circuit which monitors the input voltage and determines when to apply power to the DC −DC controller.To use the default settings for UVLO (see Table 3), the pin UVLO must be connected to VPORTN 1,2. In this case the signature resistor has to be placed directly between VPORTP and VPORTN 1,2, as shown in Figure 9.Figure 9. Default UVLO SettingsTo define the UVLO threshold externally, the UVLO pin must be connected to the center of an external resistor divider between VPORTP and VPORTN 1,2 as shown in Figure 10. The series resistance value of the external resistors must add to 25.5 k W and replaces the internalFigure 10. External UVLO ConfigurationFor a Vuvlo_on desired turn −on voltage threshold, R1 and R2 can be calculated using the following equations:R1)R2+R det R2+1.2V ulvo_onRdet When using the external resistor divider, the NCP1081has an external reference voltage hysteresis of 15 percent typical.Inrush and Operational Current LimitationsThe inrush current limit and the operational current limit are programmed individually by an external Rinrush and Rilim1 resistors respectively connected between INRUSH and VPORTN 1,2, and between ILIM1 and VPORTN 1,2 as shown in Figure 11.Figure 11. Current Limitation Configuration (Inrush & Ilim1 Pins)Figure 12. Inrush and Ilim1 Selection MechanismWhen VPORT reaches the UVLO_on level, the Cpd capacitor is charged with the INRUSH current (in order to limit the internal power dissipation of the pass−switch). Once the Cpd capacitor is fully charged, the current limit switches from the inrush current to the current limit level (ilim1) as shown in Figure 12. This transition occurs when both following conditions are satisfied:1.The VDS of the pass−switch is below theVds_pgood low level (1 V typical).2.The pass−switch is no longer in current limitmode, meaning the gate of the pass−switch is“high” (above 2 V typical).The operational current limit will stay selected as long as Vds_pgood is true (meaning that RTN−VPOR TN1,2 is below the high level of Vds_pgood). This mechanism allows a current level transition without any current spike in the pass−switch because the operational current limit (ilim1) is enabled once the pass−switch is not limiting the current anymore, meaning that the Cpd capacitor is fully charged.Thermal ShutdownThe NCP1081 includes thermal protection which shuts down the device in case of high power dissipation. Once the thermal shutdown (TSD) threshold is exceeded, following blocks are turned off:•DC−DC controller•Pass−switch•VDDH and VDDL regulators•CLASS regulatorWhen the TSD error disappears and if the input line voltage is still above the UVLO level, the NCP1081 automatically restarts with the current limit set in the inrush state, the DC−DC controller is disabled and the Css (soft−start capacitor) discharged. The DC−DC controller becomes operational as soon as capacitor Cpd is fully charged.。

版本： 1.3 日期： 2021-12-30© 2013 – 2021 AutoChips Inc.本文档包含杰发科技的专有信息。

未经授权，严禁复制或披露本文档包含的任何信息。

本文档如有更改，不另行通知。

AC781x 数据手册适用于以下产品：型号 子型号环境温度AC7811xxxx AC7811QBGE, AC7811OBGE, AC7811MBGE,AC7811QBFE, AC7811OBFE, AC7811MBFE, AC7811JBFE, AC7811QJGE, AC7811OJGE, AC7811MJGE, AC7811OJFE, AC7811MJFE, AC7811JJFE-40~125°CAC7813xxxx AC7813QBGE, AC7813OBGE, AC7813MBGE, AC7813OBFE, AC7813MBFE, AC7813JBFE -40~85°C AC7815xxxx AC7815QBGE, AC7815OBGE, AC7815MBGE, AC7815QBFE, AC7815OBFE, AC7815MBFE, AC7815JBFE-40~85°C修订记录文档目录修订记录 (2)文档目录 (3)1主要特性 (5)2器件标识 (6)2.1说明 (6)2.2格式 (6)2.3字段 (6)2.4示例 (6)3参数分类 (7)4额定值 (8)4.1热学操作额定值 (8)4.2湿度操作额定值 (8)4.3ESD 操作额定值 (8)4.4电压和电流操作额定值 (9)5通用 (10)5.1静态电气规格 (10)5.1.1电源和地引脚 (10)5.1.2DC 特性 (10)5.1.3电源电流特性 (13)5.2动态规格 (14)5.2.1控制时序 (14)5.2.2PWM模块时序 (15)5.3热规格 (16)5.3.1热特性 (16)6外设工作要求和行为 (18)6.1内核模块 (18)6.1.1SWD 电气规格 (18)6.2外部振荡器 (OSC) 和 ICS 特性 (18)6.2.1外部振荡器(OSC) 特性 (18)6.2.2内部RC 特性 (19)6.2.3PLL 特性 (19)6.3片内Flash 规格 (20)6.4模拟 (21)6.4.1ADC 特性 (21)6.4.2模拟比较器（ACMP）电气规格 (22)6.5通信接口 (22)6.5.1SPI 开关规格 (22)6.5.2CAN特性 (25)7尺寸 (26)7.1LQFP64封装信息 (26)7.2LQFP80封装信息 (28)8引脚分配 (30)8.1信号多路复用和引脚分配 (30)8.2器件引脚分配 (34)1主要特性∙操作特性电压范围：2.7 到5.5 V温度范围 (环境)： -40 到125°C∙性能高达100 MHz的 ARM® Cortex-M3内核单周期 32位 x 32位乘法器快速I/O访问接口∙存储器和存储器接口最高256 KB的片内Flash最高 64 KB的静态随机存储器∙时钟振荡器 (Oscillator) –支持4 MHz到 30 MHz 石英晶体振荡器；可选择低功耗或高增益振荡器内部时钟源 (ICS) –内部PLL ，集成内部或外部基准时钟源， 8 MHz预校准内部基准时钟源，可用于100 MHz系统时钟内部32 kHz低功耗振荡器 (LPO)∙系统外设电源管理模块(PMC) 有三个功率模式：运行、待机和停止低压检测复位电路 (LVD)带独立时钟源的看门狗(WDOG)可编程循环冗余校验(CRC)模块串行线调试(SWD) & JTAG 接口Cortex®-M3 嵌入式跟踪宏单元™SRAM 位处理映射区域 (BIT-BAND) 1个12 通道 DMA ∙人机接口68 个通用输入输出接口 (GPIO)外部中断 (IRQ)模块∙模拟模块1个多达 16通道、12位的SAR ADC，工作在停止模式，可选硬件触发器 (ADC)2个包含6位DAC和可编程参考输入的模拟比较器(ACMP)∙定时器1个6通道脉宽调制（PWM）单元3个双通道 PWM1个8通道周期性中断定时器(TIMER)1个脉宽定时器 (PWDT)1个实时时钟 (RTC)∙通信接口2个 SPI 模块6个 UART模块（其中一路兼容Software LIN）2个I2C 模块2个CAN 模块1个硬件 LIN 模块∙封装选项80引脚 LQFP64引脚LQFP2器件标识2.1说明芯片器件型号包含可识别具体器件的字段。

ZXCT1050Precision wide input range current monitorDescriptionOrdering informationThe ZXCT1050 is a wide input range current monitor, which operates over a range of input voltages from ground up to V CC -2V. As a result the ZXCT1050 can be used on the high or low side of the load.The ZXCT1050 provides variable gain by using two external resistors. The first of which sets the transconductance and the second setting the overall gain.The very low offset voltage enables a typical accuracy of 1% for sense voltages of only 30mV,giving better tolerances for small sense resistors necessary at higher currents.Features•Accurate down to end current sensing •Output voltage scaling x10•0 to V CC -2V sense input range • 2.7 to 20V supply range •50µA quiescent current •SOT23-5 packageApplications•Power supply•DC motor and solenoid control •Battery management •Over current monitor •Power management •Short circuit detectionPin connectionsTypical application circuitOrder code Pack Part mark Reel size(inches)Tape width (mm)Quantity per reel ZXCT1050E5TASOT23-51050783000Absolute maximum ratingsV CC max.20V Voltage on SENSE- and SENSE+-0.6 to V CCVoltage on all other pins -0.6V and V CC +0.6V V SENSE = ‘(V SENSE +) - (V SENSE -)’500mV Operating temperature -40 to 125°C Storage temperature-55 to 150°C Maximum junction temperature 150°CPackage power dissipation300mW * at T A = 25°C (De-rate to zero for T J = 150°C)Operation above the absolute maximum rating may cause device failure. Operation at the absolute maximum ratings, for extended periods, may reduce device reliability.Recommended operating conditionsRecommended resistor gain setting combinationsPin function tableParameterMin.Max.Units V SENSE+Common-mode sense input range 0V CC -2V V CC Supply voltage range2.720V V SENSE Differential sense input voltage range 10300mV V OUTOutput voltage range 0V CC -2V T AAmbient temperature range-40125°CGain R SH R G 107.5k ⍀ 3.75k ⍀207.5k ⍀7.5k ⍀507.5k ⍀18.7k ⍀1007.5k ⍀37.5k ⍀20 3.75k ⍀ 3.75k ⍀50 1.5k ⍀ 3.75k ⍀100750⍀3.75k ⍀PIN Name Description1V CC This is the analog supply and provides power to internal circuitry.2GND Ground pin.3OUT Output pin. A resistor, R GAIN , connected from this pin pin down to ground develops an output voltage.4SENSE+This is the positive input of the current monitor and has an input range from 0V up to V CC – 2V.5SENSE-This is the negative input of the current monitor and has an input range from 0V up to V CC – 2V. The current through this pin varies with differential sense voltage. A resistor, R SHUNT , from this pin to the rail being sensed set the transconductance of the current monitor.Electrical characteristicsTest conditions T A = 25°C, V SENSE+ = 10V, V CC = 12V, V SENSE = 100mV, R SH = 7.5k ⍀, R G = 3.75k ⍀.SymbolParameter Conditions Min.Typ.Max.Units I Q V CC pin current V SENSE = 0V 4570µA V OUTOutput voltageV SENSE = 0V =30mV =100mV =150mV02850.971.4533001.001.50153151.031.55mVmV V V I SENSE+V SENSE+ input current V SENSE = 0V 60150nA I SENSE-V SENSE- input current V SENSE = 0V 15150nA V OUT TC V OUT variation with temperature See note (*)NOTES:(*)Temperature dependent measurements are extracted from characterisation and simulation results.300ppm/°CGain V OUT /V SENSE 10Accuracy Total output error -33%BWBandwidthV SENSE(DC) = 10mV V SENSE(AC) = 10mV PPCL = 5pF , 300kHz VSENSE(DC)= 100mV0.8MHz PSRR Power supply rejection ratio V CC = 2.7V to 20V V SENSE+ = 0.7V 60dB CMRRCommon mode rejection ratioV CC = 20VV SENSE+ = 0 to 18V70dBTypical characteristicsR G = 3.75k⍀, R SH = 7.5k⍀ unless otherwise stated.Typical characteristicsR G = 3.75k⍀, R SH = 7.5k⍀ unless otherwise stated.Typical characteristicsR G = 3.75k⍀, R SH = 7.5k⍀ unless otherwise stated.Applications informationThe ZXCT1050 is a current output version of the ZXCT1051 and as such uses a separate power supply pin. All biasing for the internal amplifiers comes from its separate V CC input and is not ‘line powered’, unlike the ZXCT1021.This means that at very small sense voltages the ZXCT1050 draws very little current (<1␮A) from the lines being sensed.The separate V CC pin enables the ZXCT1050 to be operated at sense line voltages down to 0V,where the ZXCT1021 would switch off. This feature enables the ZXCT1050 to be used to sense the currents flowing through lines that have been shorted to ground.Basic operationLoad current, I L , from V RAIL is drawn through R SENSE developing a voltage V SENSE across the sense inputs of the ZXCT1050.The internal amplifier forces V SENSE across external resistance R SH (internal on the ZXCT1051)causing a current to flow through transistor Q1 and out of the output pin, OUT. This current is then converted to a voltage by a resistor, R G , between OUT and GND.The overall gain of the ZXCT1050 is determined by the following expression:A ratio of 1:2 between R SH and R G creates the fixed gain of 10 with an output impedance equal to RG (see electrical characteristics for output current-voltage characteristics).The ZXCT1050 has both R G and R SH external. This allows R G and R SH to be varied so that the required gain can be achieved at the required output impedance.For low power applications both R G and R SH can be increased whereas for driving low impedance R G and R SH can be decreased.The maximum recommended value for R G is 40k ⍀ and the maximum recommended value for RSH is 10k ⍀. Large values of R SH start increasing the effective input offset error, while large values of R G can created load errors and reduce bandwidths.The maximum differential input voltage, V SENSE , is 150mV (I L * R SENSE ); however voltages up to 500mV will not damage it. This can be increased further by the inclusion of a resistor, R LIM ,between the SENSE+ pin and the rail being sensed, V RAIL .For best performance R SENSE should be connected as close to the SENSE+ and SENSE- pins thus minimizing any series resistance with R SENSE .GAIN 20R GR SH----------×=Package outline - SOT23-5Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inchesDIM MillimetersInchesMin.Max.Min.Max.A - 1.00-0.0393A10.010.100.00030.0039A20.840.900.03300.0354b 0.300.450.01180.0177c 0.120.200.00470.0078D 2.90 BSC 0.114 BSCE 2.80 BSC 0.110 BSC E1 1.60 BSC 0.062 BSC e 0.95 BSC 0.0374 BSC e1 1.90 BSC0.0748 BSCL 0.300.500.01180.0196L20.25 BSC 0.010 BSCa°4°12°4°12°DefinitionsProduct changeZetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders.Applications disclaimerThe circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances.Life supportZetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:A. Life support devices or systems are devices or systems which:1.are intended to implant into the bodyor2.support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in thelabelling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected tocause the failure of the life support device or to affect its safety or effectiveness.ReproductionThe product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned.Terms and ConditionsAll products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.Quality of productZetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: /salesnetworkZetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD(Electrostatic discharge)Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced.Green complianceZetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions.All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives.Product status key:“Preview”Future device intended for production at some point. Samples may be available“Active”Product status recommended for new designs“Last time buy (LTB)”Device will be discontinued and last time buy period and delivery is in effect“Not recommended for new designs”Device is still in production to support existing designs and production“Obsolete”Production has been discontinuedDatasheet status key:“Draft version”This term denotes a very early datasheet version and contains highly provisional information, whichmay change in any manner without notice.“Provisional version”This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.However, changes to the test conditions and specifications may occur, at any time and without notice.“Issue”This term denotes an issued datasheet containing finalized specifications. However, changes tospecifications may occur, at any time and without notice.。

PMS150C系列8位IO类型单片机数据手册第0.01版2016年3月17日Copyright 2016 by PADAUK Technology Co., Ltd., all rights reserved重要声明应广科技保留权利在任何时候变更或终止产品，建议客户在使用或下单前与应广科技或代理商联系以取得最新、最正确的产品信息。

应广科技不担保本产品适用于保障生命安全或紧急安全的应用，应广科技不为此类应用产品承担任何责任。

关键应用产品包括，但不仅限于，可能涉及的潜在风险的死亡，人身伤害，火灾或严重财产损失。

应广科技不承担任何责任来自于因客户的产品设计所造成的任何损失。

在应广科技所保障的规格范围内，客户应设计和验证他们的产品。

为了尽量减少风险，客户设计产品时，应保留适当的产品工作范围安全保障。

PMS150C不适用于交流供电阻容降压或者电源纹波大，EFT要求高的应用，请注意不要将PMS150C用于这种特殊要求的产品中。

提供本文档的中文简体版是为了便于了解，请勿忽视文中英文的部份，因为其中提供有关产品性能以及产品使用的有用信息，应广科技暨代理商对于文中可能存在的差错不承担任何责任，建议参考本档英文版。

目录1. 单片机特点 (7)1.1. 系统功能 (7)1.2. CPU特点 (7)2. 系统概述和方框图 (8)3. 引脚功能说明 (9)4. 器件电气特性 (10)4.1 直流交流电气特性 (10)4.2 工作范围 (11)4.3 IHRC频率与VDD关系曲线图 (12)4.4 ILRC频率与VDD关系曲线图 (12)4.5 IHRC频率与温度关系曲线图（校准到16MHz） (13)4.6 ILRC频率与温度关系曲线图 (13)4.7 工作电流与VDD、系统时钟CLK=IHRC/n曲线图 (14)4.8 工作电流与VDD、系统时钟CLK=ILRC/n曲线图 (14)4.9 引脚上拉电阻曲线图 (15)4.10 引脚输出驱电流(Ioh)与灌电流(Iol) 曲线图 (15)4.11 引脚输出输入高电压与低电压(V IH / V IL) 曲线图 (16)5. 功能概述 (17)5.1程序内存——OTP (17)5.2 开机流程 (17)5.3 数据存储器 – SRAM (18)5.4 振荡器和时钟 (18)5.4.1内部高频振荡器和内部低频振荡 (18)5.4.2芯片校准 (18)5.4.3 IHRC频率校准与系统时钟 (19)5.4.4系统时钟和LVR基准位 (20)5.5 16位定时器 (Timer16) (21)5.6 看门狗定时器 (22)5.7 中断 (22)5.8 省电与掉电 (24)5.8.1省电模式（stopexe） (24)5.8.2掉电模式（stopsys） (25)5.8.3 唤醒 (26)5.9 IO引脚 (27)5.10 复位和LVR (28)5.10.1复位 (28)6. IO 寄存器 (29)6.1 标志寄存器（flag），IO 地址 =0x00 (29)6.2 堆栈指针寄存器（sp），IO地址 =0x02 (29)6.3 时钟控制寄存器（clkmd），IO地址 =0x03 (29)6.4 中断允许寄存器（inten），IO地址 =0x04 (30)6.6 Timer16控制寄存器（t16m），IO地址 =0x06 (30)6.7 外部晶体振荡器控制寄存器（eoscr，只写），IO地址 =0x0a (31)6.8 中断缘选择寄存器 (integs), IO地址 =0x0c (31)6.9 端口A数字输入启用寄存器(padier), IO 地址 =0x0d (31)6.10 端口A数据寄存器（pa），IO地址 =0x10 (31)6.11 端口A控制寄存器（pac），IO地址 =0x11 (31)6.12 端口A上拉控制寄存器（paph），IO地址 =0x12 (31)6.13 杂项寄存器(misc), IO 地址 =0x3b (32)7. 指令 (33)7.1 数据传输类指令 (34)7.2 算术运算类指令 (36)7.3 移位元元运算类指令 (38)7.4 逻辑运算类指令 (39)7.5 位运算类指令 (41)7.6 条件运算类指令 (41)7.7 系统控制类指令 (42)7.8 指令执行周期综述 (44)7.9 指令影响标志的综述 (45)8. 特别注意事项 (46)8.1. 使用IC时 (46)8.1.1. IO使用与设定 (46)8.1.2. 中断 (46)8.1.3. 切换系统时钟 (47)8.1.4. 掉电模式、唤醒以及看门狗 (47)8.1.5. TIMER16溢出时间 (47) (47)8.1.6. LVR8.1.7. 指令 (47)8.1.8. RAM定义限制 (47)8.1.9. 烧录方法 (48)8.2. 使用ICE时 (48)修订历史：修订日期描述初版0.01 2016/3/17PMS150B 和PMS150C 主要差异表PMS150B 与PMS150C 主要差异列举如下：项目 功能PMS150BPMS150C1 ILRC 频率 110KHz@5.0V ，25oC 62KHz@5.0V ，25o C （VDD 变化对ILRC 有影响） 2 LVR 2.8V,2.2V,2.0V 4.0V,3.5V,3.0V,2.75V 2.5V,2.2V,2.0V,1.8V 3 RAM 60 bytes64 bytes 4 PA5口输入模式上拉电阻 没有有5 工作温度0o C ~70o C -20o C ~70o C6省电模式功耗（stopexe ） 40uA@3.3V3 uA@3.3V7 IO 输出电流 17mA/-7mA@5.0V普通模式：14.5mA/-10.5mA@5.0V低驱动模式：5mA/-3.5mA@5.0V 8 看门狗定时器溢时 4096,16384,65536 ILRC 时钟周期8192,16384,65536,262144 ILRC 时钟周期9 唤醒时间 快速模式：1024 T IHRC 普通模式：1024 T ILRC 快速模式：32 T ILRC 普通模式：2048 T ILRC 10 开机时间快速模式：2048 T IHRC 普通模式：1024 T ILRC快速模式：32 T ILRC 普通模式：2048 T ILRC 11系统保留OTP 区 0x3F8~0x3FF(8 word) 0x3F0~0x3FF(16 word)12 ILRC 做系统时钟源 ILRC,ILRC/4 ILRC,ILRC/4,ILRC/16 13支持ICE 类型PDK3S-I-001/002/003, 5S-I-S015S-I-S011. 单片机特点1.1. 系统功能◆时钟模式：内部高频振荡器、内部低频振荡器◆硬件16位定时器◆快速唤醒功能◆ 6 个带输入上拉电阻IO引脚，且做输出时具有可选的电流驱动能力◆1个外部中断输入引脚◆每个引脚都可弹性设定唤醒功能◆8级LVR可选◆工作频率0 ~ 8MHz@VDD≧3V; 0 ~ 4MHz@VDD≧2.2V; 0 ~ 2MHz@VDD≧2.0V;◆工作电压：2.0V ~ 5.5V◆工作温度：-20 o C ~70 o C◆功耗特性：I operating ~ 0.3mA@1MIPS, VDD=3.3VI operating ~ 13uA@ILRC=62KHz, VDD=3.3VI powerdown ~ 0.5uA@VDD=3.3V1.2. CPU特点◆工作模式：单一处理单元的工作模式◆ 1KW OTP程序内存◆ 64字节数据存储器◆提供79条指令◆绝大部分指令都是单周期（1T）指令◆可程序设定的堆栈深度◆所有的数据存储器都可当数据指针（index pointer）◆独立的IO地址以及存储地址方便程序开发2. 系统概述和方框图PMS150C是一个IO类型、完全静态，以OTP为程序存储基础的单片机。