FDA18N50中文资料

--
--
IGSSF IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
--
--
1 10 100 -100
FQP13N50C FQPF13N50C
500
13
13 *
8
8*
52
52 *
± 30
860
13
19.5
4.5
195
48
1.56
0.39
-55 to +150
300
Units V A A A V mJ A mJ
V/ns W
W/°C °C
°C
Thermal Characteristics
Symbol RθJC RθJS RθJA
2.0 --
4.0
V
VGS = 10 V, ID = 6.5 A
-- 0.39 0.48
Ω
VDS = 40 V, ID = 6.5 A
(Note 4) --
15
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current - Pulsed

Notes:1. Repetitive Rating: Pulse width limited by maximum junction temperature2. L = 5.6mH, I AS = 13A, V DD = 50V, R G = 25 Ω, Starting T J = 25°C3. I SD ≤ 13A, di/dt ≤ 200A/µs, V DD ≤ BV DSS, Starting T J = 25°C4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%5. Essentially Independent of Operating Temperature Typical Characteristicsf = 1.0MHzC oss Output Capacitance--180235pF C rss Reverse Transfer Capacitance --2025pF Switching Characteristicst d(on)Turn-On Delay Time V DD = 250V, I D = 13A R G = 25Ω(Note 4, 5)--2560ns t r Turn-On Rise Time --100210ns t d(off)Turn-Off Delay Time --130270ns t f Turn-Off Fall Time --100210ns Q g Total Gate Charge V DS = 400V, I D = 13A V GS = 10V(Note 4, 5)--4356nC Q gs Gate-Source Charge --7.5--nC Q gd Gate-Drain Charge--18.5--nC Drain-Source Diode Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current ----13A I SM Maximum Pulsed Drain-Source Diode Forward Current ----52A V SD Drain-Source Diode Forward Voltage V GS = 0V, I S = 13A---- 1.4V t rr Reverse Recovery Time V GS = 0V, I S = 13AdI F /dt =100A/µs (Note 4)--100160ns Q rrReverse Recovery Charge--0.35--µCUnclamped Inductive Switching Test Circuit & WaveformsLIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet Identification Product Status DefinitionAdvance Information Formative or InDesign This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.Preliminary First Production This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.No Identification Needed Full Production This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Rev. I19。

LM118/LM218/LM318 Operational Amplifiers General DescriptionThe LM118series are precision high speed operational am-plifiers designed for applications requiring wide bandwidth and high slew rate.They feature a factor of ten increase in speed over general purpose devices without sacrificing DC performance.The LM118series has internal unity gain frequency compen-sation.This considerably simplifies its application since no external components are necessary for operation.However, unlike most internally compensated amplifiers,external fre-quency compensation may be added for optimum perfor-mance.For inverting applications,feedforward compensa-tion will boost the slew rate to over150V/µs and almost double the bandwidth.Overcompensation can be used with the amplifier for greater stability when maximum bandwidth is not needed.Further,a single capacitor can be added to reduce the0.1%settling time to under1µs.The high speed and fast settling time of these op amps make them useful in A/D converters,oscillators,active filters,sample and hold circuits,or general purpose amplifiers. These devices are easy to apply and offer an order of magnitude better AC performance than industry standards such as the LM709.The LM218is identical to the LM118except that the LM218 has its performance specified over a−25˚C to+85˚C tem-perature range.The LM318is specified from0˚C to+70˚C. Featuresn15MHz small signal bandwidthn Guaranteed50V/µs slew raten Maximum bias current of250nAn Operates from supplies of±5V to±20Vn Internal frequency compensationn Input and output overload protectedn Pin compatible with general purpose op ampsFast Voltage Follower(Note1)00776613 Note1:Do not hard-wire as voltage follower(R1≥5kΩ)August2000LM118/LM218/LM318 Operational Amplifiers©2004National Semiconductor Corporation Absolute Maximum Ratings (Note 7)If Military/Aerospace specified devices are required,please contact the National Semiconductor Sales Office/Distributors for availability and specifications.Supply Voltage±20VPower Dissipation (Note 2)500mWDifferential Input Current (Note 3)±10mA Input Voltage (Note 4)±15VOutput Short-Circuit Duration ContinuousOperating Temperature Range LM118−55˚C to +125˚C LM218−25˚C to +85˚C LM3180˚C to +70˚C Storage Temperature Range−65˚C to +150˚CLead Temperature (Soldering,10sec.)Hermetic Package 300˚C Plastic Package 260˚CSoldering Information Dual-In-Line Package Soldering (10sec.)260˚C Small Outline Package Vapor Phase (60sec.)215˚C Infrared (15sec.)220˚C See AN-450“Surface Mounting Methods and Their Effect on Product Reliability”for other methods of soldering surface mount devices.ESD Tolerance (Note 8)2000VElectrical Characteristics (Note 5)ParameterConditionsLM118/LM218LM318UnitsMinTyp Max MinTyp Max Input Offset Voltage T A =25˚C 24410mV Input Offset Current T A =25˚C 65030200nA Input Bias Current T A =25˚C 120250150500nA Input Resistance T A =25˚C 130.53M ΩSupply CurrentT A =25˚C58510mA Large Signal Voltage Gain T A =25˚C,V S =±15V 5020025200V/mV V OUT =±10V,R L ≥2k ΩSlew RateT A =25˚C,V S =±15V,A V =150705070V/µs(Note 6)Small Signal Bandwidth T A =25˚C,V S =±15V1515MHz Input Offset Voltage 615mV Input Offset Current 100300nA Input Bias Current 500750nA Supply CurrentT A =125˚C4.57mA Large Signal Voltage Gain V S =±15V,V OUT =±10V 2520V/mVR L ≥2k ΩOutput Voltage Swing V S =±15V,R L =2k Ω±12±13±12±13V Input Voltage RangeV S =±15V±11.5±11.5V Common-Mode Rejection Ratio 8010070100dB Supply Voltage Rejection Ratio70806580dBNote 2:The maximum junction temperature of the LM118is 150˚C,the LM218is 110˚C,and the LM318is 110˚C.For operating at elevated temperatures,devices in the H08package must be derated based on a thermal resistance of 160˚C/W,junction to ambient,or 20˚C/W,junction to case.The thermal resistance of the dual-in-line package is 100˚C/W,junction to ambient.Note 3:The inputs are shunted with back-to-back diodes for overvoltage protection.Therefore,excessive current will flow if a differential input voltage in excess of 1V is applied between the inputs unless some limiting resistance is used.Note 4:For supply voltages less than ±15V,the absolute maximum input voltage is equal to the supply voltage.Note 5:These specifications apply for ±5V ≤V S ≤±20V and −55˚C ≤T A ≤+125˚C (LM118),−25˚C ≤T A ≤+85˚C (LM218),and 0˚C ≤T A ≤+70˚C (LM318).Also,power supplies must be bypassed with 0.1µF disc capacitors.Note 6:Slew rate is tested with V S =±15V.The LM118is in a unity-gain non-inverting configuration.V IN is stepped from −7.5V to +7.5V and vice versa.The slew rates between −5.0V and +5.0V and vice versa are tested and guaranteed to exceed 50V/µs.Note 7:Refer to RETS118X for LM118H and LM118J military specifications.Note 8:Human body model,1.5k Ωin series with 100pF.L M 118/L M 218/L M 318 2Typical Performance CharacteristicsLM118,LM218Input CurrentVoltage Gain0077662500776626Power Supply Rejection Input Noise Voltage0077662700776628Common Mode Rejection Supply Current0077662900776630LM118/LM218/LM3183Typical Performance CharacteristicsLM118,LM218(Continued)Closed Loop OutputImpedanceCurrent Limiting0077663100776632Input Current Unity Gain Bandwidth0077663300776634Voltage Follower Slew Rate Inverter Settling Time0077663500776636L M 118/L M 218/L M 318 4Typical Performance CharacteristicsLM118,LM218(Continued)Large Signal FrequencyResponseOpen Loop FrequencyResponse0077663700776638Voltage Follower PulseResponse Large Signal FrequencyResponse0077663900776640Open Loop FrequencyResponseInverter Pulse Response0077664100776642LM118/LM218/LM3185Typical Performance CharacteristicsLM318Input CurrentVoltage Gain0077664300776644Power Supply Rejection Input Noise Voltage0077664500776646Common Mode Rejection Supply Current0077664700776648L M 118/L M 218/L M 318 6Typical Performance CharacteristicsLM318(Continued)Closed Loop Output ImpedanceCurrent Limiting0077664900776650Input Current Unity Gain Bandwidth0077665100776652Voltage Follower Slew Rate Inverter Settling Time0077665300776654LM118/LM218/LM3187Typical Performance CharacteristicsLM318(Continued)Large Signal FrequencyResponseOpen Loop FrequencyResponse0077665500776656Voltage Follower PulseResponse Large Signal FrequencyResponse0077665700776658Open Loop FrequencyResponseInverter Pulse Response0077665900776660L M 118/L M 218/L M 318 8Auxiliary CircuitsFeedforward Compensation for Greater Inverting Slew Rate(Note 9)00776608*Balance circuit necessary for increased slew.Note 9:Slew rate typically 150V/µs.Compensation for Minimum Settling Time(Note 10)00776609Note 10:Slew and settling time to 0.1%for a 10V step change is 800ns.Offset Balancing00776610Isolating Large Capacitive Loads00776611Overcompensation00776612LM118/LM218/LM3189Typical ApplicationsFast Voltage Follower(Note 11)00776613Integrator or Slow Inverter00776614C F =Large (C F ≥50pF)*Do not hard-wire as integrator or slow inverter;insert a 10k-5pF network in series with the input,to prevent oscillation.Note 11:Do not hard-wire as voltage follower (R1≥5k Ω)Fast Summing Amplifier 00776615Differential Amplifier00776616L M 118/L M 218/L M 318 10Typical Applications(Continued)Fast Sample and Hold00776618D/A Converter Using Ladder Network00776619*Optional —Reduces settling time.LM118/LM218/LM31811Typical Applications(Continued)Four Quadrant Multiplier00776617∆Output zero.*“Y”zero +“X”zero ‡Full scale adjust.D/A Converter Using Binary Weighted Network00776620*Optional —Reduces settling time.L M 118/L M 218/L M 318 12Typical Applications(Continued)Fast Summing Amplifier with Low Input Current00776621Wein Bridge Sine Wave Oscillator00776622Instrumentation Amplifier00776623LM118/LM218/LM31813Schematic Diagram00776601L M 118/L M 218/L M 318 14Connection DiagramDual-In-Line Package00776624Top ViewOrder Number LM118J/883(Note13)See NS Package Number J14ADual-In-Line Package00776603Top ViewOrder Number LM118J-8/883(Note13),LM318M or LM318NSee NS Package Number J08A,M08A or N08BMetal Can Package(Note12)00776602Top ViewOrder Number LM118H,LM118H/883(Note13),LM218H or LM318HSee NS Package Number H08CNote12:Pin connections shown on schematic diagram and typical applica-tions are for TO-5package.Note13:Available per JM38510/10107.LM118/LM218/LM31815Physical Dimensionsinches (millimeters)unless otherwise notedMetal Can Package (H)Order Number LM118H,LM118H/883,LM218H or LM318HNS Package Number H08CCeramic Dual-In-Line Package (J)Order Number LM118J-8/883NS Package Number J08AL M 118/L M 218/L M 318 16Physical Dimensionsinches (millimeters)unless otherwise noted (Continued)Ceramic Dual-In-Line Package (J)Order Number LM118J/883NS Package Number J14AS.O.Package (M)Order Number LM318M or LM318MXNS Package Number M08ALM118/LM218/LM31817Physical Dimensionsinches (millimeters)unless otherwise noted (Continued)Molded Dual-In-Line Package (N)Order Number LM318N NS Package Number N08ELIFE SUPPORT POLICYNATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION.As used herein:1.Life support devices or systems are devices or systems which,(a)are intended for surgical implant into the body,or (b)support or sustain life,and whose failure to perform when properly used in accordance with instructions for use provided in the labeling,can be reasonably expected to result in a significant injury to the user. 2.A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system,or to affect its safety or effectiveness.BANNED SUBSTANCE COMPLIANCENational Semiconductor certifies that the products and packing materials meet the provisions of the Customer Products Stewardship Specification (CSP-9-111C2)and the Banned Substances and Materials of Interest Specification (CSP-9-111S2)and contain no ‘‘Banned Substances’’as defined in CSP-9-111S2.National Semiconductor Americas Customer Support CenterEmail:new.feedback@ Tel:1-800-272-9959National SemiconductorEurope Customer Support CenterFax:+49(0)180-5308586Email:europe.support@Deutsch Tel:+49(0)6995086208English Tel:+44(0)8702402171Français Tel:+33(0)141918790National Semiconductor Asia Pacific Customer Support CenterEmail:ap.support@National SemiconductorJapan Customer Support Center Fax:81-3-5639-7507Email:jpn.feedback@ Tel:81-3-5639-7560L M 118/L M 218/L M 318O p e r a t i o n a l A m p l i f i e r sNational does not assume any responsibility for use of any circuitry described,no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.。

Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
––– ––– –––
Max.
275 11 6.0
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
ID = 11A
RDS(on) , Drain-to-Source On Resistance (Normalized)
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature

3
元器件交易网
IRFIB7N50A
2400
2000
VGS , Gate-to-Source Voltage (V)
V GS C is s C rss C oss
= = = =
0V, f = 1M Hz C g s + C g d , Cd s S H O R T E D C gd C ds + C gd
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time