NTMS10P02R2 PDF规格书

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tr 100 td(on)
10
1.0
10
.
100
10
1.0
10 RG, GATE RESISTANCE (OHMS)
100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation versus Gate Resistance
100 s 10 V GS = 2.5 V SINGLE PULSE T C = 25° C R DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1.0 10 1.0 ms
10 ms
1.0
0.50
0.55
0.60
0.65
0.70
0.1
dc 100
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
1000
T J = 125° C
100
T J = 100° C
−25
0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C)
150
10
2.0
6.0 10 14 18 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On −Resistance Variation with Temperature
0.025
0
0
2.0 4.0 6.0 8.0 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
10
0.008
6.0
10 14 −ID, DRAIN CURRENT (AMPS)
18
Figure 3. On −Resistance versus Gate −To −Source Voltage
Figure 7. Capacitance Variation
1000 V DD = −10 V ID = −1.0 A V GS = −4.5 V t, TIME (ns) t d(off) tf t, TIME (ns) 1000 V DD = −10 V ID = −10 A V GS = −4.5 V td(off) tr tf 100 td(on)
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
11. Diode Forward Voltage versus Current
Figure 12. Maximum Rated Forward Biased Safe Operating Area
C, CAPACITANCE (pF)
Q3 0 10 20 30
40
50
−VGS −VDS
Qg, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 8. Gate −To −Source and Drain −To −Source Voltage versus Total Charge
15
−10 V −3.1 V
10
5.0
V GS = −1.7 V
100 ° C
T J = −55 ° C
0
0
0.25 0.50 0.75 1.00 1.25 1.50 1.75 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
2.00 RDS(on) , DRAIN−TO−SOURCE RESISTANCEห้องสมุดไป่ตู้(OHMS)
NTMS10P02R2 P-Channel MOSFET
SOP-8
■ Features
● VDS (V) =-20V ● ID =-10 A (VGS =-10V) ● RDS(ON) < 14 mΩ (VGS =-4.5V)
1.50 0.15
● RDS(ON) < 20mΩ (VGS =-2.5V) ● Diode Exhibits High Speed, Soft Recovery
1.6 1.4 1.2 1.0 0.8 0.6 −50 ID = −10 A V GS = −4.5 V 10,000
Figure 4. On-Resistance versus Drain Current and Gate Voltage
V GS = 0 V −IDSS , LEAKAGE (nA)
0
0.5 1.0 1.5 2.0 2.5 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
RDS(on) , DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS)
0.21 -0.02
+0.04
1 2 3 4
Source Source Source Gate
5 6 7 8
Drain Drain Drain Drain
D
G S
■ Absolute Maximum Ratings Ta = 25℃
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Maximum Operating Drain Current Pulsed Drain Current Power Dissipation Maximum Operating Power Dissipation Avalanche Energy (Note.2) Junction Temperature Lead Temperature for Soldering Purposes Junction Storage Temperature Range TJ = 25°C Thermal Resistance.Junction- to-Ambient (Note.1) Ta = 25℃ IDM PD EAS RthJA TJ TL Tstg 50 150 260 -55 to 150 ℃ Ta = 25℃ Ta = 70℃ ID Symbol VDS VGS -10 -8 -5.5 -50 2.5 0.6 500 80 10 seconds -20 ±12 -8.8 -6.4 -4.5 -44 1.6 0.4 W mJ ℃/W A steady state Unit V
100 −IS, SOURCE CURRENT (AMPS) −ID , DRAIN CURRENT (AMPS) 2.0 1.6 1.2 0.8 0.4 0 V GS = 0 V T J = 25° C
Figure 10. Resistive Switching Time Variation versus Gate Resistance
Note.1: Pulse Test: Pulse Width < 300us, Duty Cycle < 2%. Note.2: VDD=−20 V, VGS =−4.5V, Peak IL =5A, L = 40 mH, RG = 25Ω
NTMS10P02R2 P-Channel MOSFET
■ Marking
Marking 10P02 KC****
NTMS10P02R2 P-Channel MOSFET
■ Typical Characterisitics
20 −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) −2.3 V −2.1 V T J = 25° C −1.9 V 10 V DS ≥ − 10 V 8.0 6.0 4.0 2.0 0 25 ° C
Figure 6. Drain −To −Source Leakage Current versus Voltage
NTMS10P02R2 P-Channel MOSFET
■ Typical Characterisitics
−VGS , GATE−TO−SOURCE VOLTAGE (VOLTS) 10,000 8000 6000 C rss 4000 2000 C rss 0 10 5.0 0 5.0 10 C iss C oss 15 20 V GS = 0 V V DS = 0 V C iss 5.0 4.0 3.0 Q1 2.0 1.0 0 ID = −10 A T J = 25° C Q2 4.0 2.0 0 T J = 25° C QT V DS V GS 10 8.0 6.0 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
■ Electrical Characteristics Ta = 25℃
Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Maximum Body-Diode Continuous Current Symbol VDSS IDSS IGSS VGS(th) RDS(On) gFS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf td(on) tr td(off) tf trr ta tb Qrr IS IS=-2.1A,VGS=0V Diode Forward Voltage VSD IS=-2.1A,VGS=0V,TJ = 125℃ IS=-10A,VGS=0V IS=-10A,VGS=0V,TJ = 125℃ -0.72 -0.6 -0.9 -0.75 IF=-2.1A, VGS=0, dI/dt=100A/μs VGS=-4.5V, VDS=-10V, ID=10A,RG=6Ω VGS=-4.5V, VDS=-10V, ID=1A,RG=6Ω VGS=-4.5V, VDS=-10V, ID=-10A VGS=0V, VDS=-16V, f=1MHz Test Conditions ID=-250μA, VGS=0V VDS=-20V, VGS=0V, TJ=25℃ VDS=-20V, VGS=0V, TJ=70℃ VDS=0V, VGS=±12V VDS=VGS ID=-250μA VGS=-4.5V, ID=-10A VGS=-2.5V, ID=-8.8A VDS=-10V, ID=-10A 30 3100 1100 475 48 6.5 17 25 40 110 110 25 100 100 125 65 25 40 75 -10 -1.2 V nC A 100 ns 35 65 190 190 3640 1670 1010 70 nC pF -0.6 Min -20 -1 -5 ±100 -1.2 14 20 Typ Max Unit V μA nA V mΩ S