2PB11;中文规格书,Datasheet资料

No. A0279-1/7Applications • High-speed switching applications (switching regulator, driver circuit)Features• Adoption of MBIT process•Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switchingSpeci fi cationsAbsolute Maximum Ratingsat Ta=25°CParameterSymbol ConditionsRatingsUnit Collector-to-Base Voltage V CBO60V Collector-to-Emitter Voltage V CES 60V V CEO 50V Emitter-to-Base Voltage V EBO 6V Collector Current I C 15A Collector Current (Pulse)I CP PW ≤10μs, duty cycle ≤1%20A Base Current I B 3A Collector Dissipation P C 2W Tc=25°C23W Junction Temperature Tj 150°C Storage TemperatureTstg--55 to +150°CPackage Dimensionsunit : mm (typ)7529-00260612 TKIM/12512 TKIM TC-00002709/72606/31506FA MSIM TB-000020892SC6082NPN Epitaxial Planar Silicon Transistor50V / 15A High-Speed Switching ApplicationsProduct & Package Information• Package : TO-220F-3SG • JEITA, JEDEC : SC-67• Minimum Packing Quantity : 50 pcs./magazineMarkingElectrical ConnectionC6082LOT No.Electrical Characteristicsat Ta=25°CParameterSymbol ConditionsRatingsUnit mintypmaxCollector Cutoff Current I CBO V CB =40V , I E =0A 10μA Emitter Cutoff Current I EBO V EB =4V , I C =0A 10μADC Current Gain h FE 1V CE =2V , I C =330mA 200560h FE 2V CE =2V , I C =10A 50Gain-Bandwidth Product f T V CE =10V , I C=2A195MHz Output CapacitanceCob V CB =10V , f=1MHz 85pF Collector-to-Emitter Saturation Voltage V CE (sat)I C =7.5A, I B =375mA 200400mV Base-to-Emitter Saturation Voltage V BE (sat)I C =7.5A, I B =375mA 1.2V Collector-to-Base Breakdown Voltage V (BR)CBO I C =100μA, I E =0A 60V Collector-to-Emitter Breakdown Voltage V (BR)CES I C =100μA, R BE =0Ω60V V (BR)CEO I C =1mA, R BE =∞50V Emitter-to-Base Breakdown Voltage V (BR)EBO I E =100μA, I C =0A 6V Turn-On Time t on See speci fi ed Test Circuit52ns Storage Time t stg 560ns Fall Timet f37nsSwitching Time Test CircuitOrdering InformationDevicePackage Shippingmemo2SC6082-1ETO-220F-3SG50pcs./magazine Pb FreeCC I C =20I B1= --20I B2=5APW=20μsD.C.≤1%Collector-to-Emitter V oltage, V CE -- VC o l l e c t o r C u r r e n t , I C -- ACollector-to-Emitter V oltage, V CE -- VC o l l e c t o r C u r r e n t , I C -- AIT10574IT105751001000100.010.11.0100.010.11.010100100010100100010100100010Collector Current, I C -- AD C C u r r e n t G a i n , h F ECollector Current, I C-- AD C C u r r e n t G a i n , h F EBase-to-Emitter V oltage, V BE -- VC o l l e c t o r C u r r e n t , I C -- ACollector-to-Base V oltage, V CB -- VO u t p u t C a p a c i t a n c e , C o b -- p FCollector Current, I C -- AC o l l e c t o r -t o -E m i t t e r S a t u r a t i o n V o l t a g e , V C E (s a t ) -- VG a i n -B a n d w i d t h P r o d u c t , f T -- M H zCollector Current, I C -- AIT10576IT10577IT10578IT10581IT105800.10.01IT10579C o l l e c t o r -t o -E m i t t e r S a t u r a t i o n V o l t a g e , V C E (s a t ) -- VCollector Current, I C -- ACollector Current, I C -- AB a s e -t o -E m i t t e r S a t u r a t i o n V o l t a g e , V B E (s a t ) -- VIT10582321.02375IT105830.10.01Collector-to-Emitter V oltage, V CE -- VC o l l e c t o r C u r r e n t , I C -- AAmbient Temperature, Ta -- °CC o l l e c t o rD i s s i p a t i o n , P C -- WCase Temperature, Tc -- °CC o l l e c t o rD i s s i p a t i o n , P C -- WIT167110.010.11.010100IT16709IT16710Magazine Specifi cation 2SC6082-1EOutline Drawing2SC6082-1EMass (g)Unit1.8mm* For referenceThis catalog provides information as of June, 2012. Specifi cations and information herein are subject to change without notice.分销商库存信息: ONSEMI2SC6082。

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IR2011(S) & (PbF)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Symbol
VB VS VHO VCC VLO VIN dVs/dt PD RTHJA TJ TS TL
Definition
High side floating supply voltage High side floating supply offset voltage High side floating output voltage Low side fixed supply voltage Low side output voltage Logic input voltage (HIN & LIN) Allowable offset supply voltage transient (figure 2) Package power dissipation @ TA £ +25°C Thermal resistance, junction to ambient Junction temperature Storage temperature Lead temperature (soldering, 10 seconds) (8-lead DIP) (8-lead SOIC) (8-lead DIP) (8-lead SOIC)

[2] Device mounted on a ceramic PCB, Al2O3, standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Min
VCBO
collector-base voltage
open emitter
-
VCEO
collector-emitter voltage
open base
-
VEBO
emitter-base voltage
open collector
-
VI
input voltage
positive
-
negative
δ=1 0.75
0.50 0.33
0.20
0.10
0.05
0.02 0.01
10
006aab002
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Ceramic PCB, Al2O3 standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT23 (TO-236AB); typical values
Version SOT23
4. Marking
Table 4. Marking codes Type number PBRP123YT

AN26210A
Product Standards
Current and Voltage Range for Pins
Notes) y Do not apply voltage to N.C. pins.
Total Pages 26
Page 6
y The values shows voltage to the GND unless otherwise specified. (+) is inlet current and (–) is outlet current in the circuit. y Voltage applying exceeding below ratings leads to the malfunction and the damage of the device. y Below ratings are specified regarding malfunction and stress, not for operation guaranty.
(High-Gain mode) (High-Gain mode) (High-Gain mode) (High-Gain mode) (High-Gain mode) (High-Gain mode)
Applications
y W-CDMA dual-band terminals
Package
Total Pages 26
Page 5
Description
2007-02-27 Established
232621000506082
Revised Semiconductor Company, Matsushita Electric Industrial Co., Ltd.