MAX7042中文资料

SIPMOS ® Small-Signal-TransistorProduct Summary V DS 60V RDS(on)5ΩI D0.2AFeature • N-Channel• Enhancement mode • Logic Level • d v /d t ratedSOT-23Marking sSN sSNType Package Ordering Code Tape and Reel Information SN7002N SOT-23Q67042-S4185E6327: 3000 pcs/reel SN7002NSOT-23Q67042-S4192E6433: 10000 pcs/reelMaximum Ratings , at T j = 25 °C, unless otherwise specified ParameterSymbol Value Unit Continuous drain currentT A =25°C T A =70°CI D0.20.16APulsed drain currentT A =25°CI D puls 0.8Reverse diode d v /d tI S =0.2A, V DS =48V, d i /d t =200A/µs, T jmax =150°Cd v /d t 6kV/µs Gate source voltageV GS ±20VESD Sensitivity (HBM) as per MIL-STD 883Class 1Power dissipationT A =25°CP tot 0.36W Operating and storage temperature T j , T stg-55... +150°C IEC climatic category; DIN IEC 68-155/150/56Thermal CharacteristicsParameter Symbol Values Unitmin.typ.max. CharacteristicsThermal resistance, junction - ambientat minimal footprintR thJA--350K/WElectrical Characteristics, at T j = 25 °C, unless otherwise specifiedParameter Symbol Values Unitmin.typ.max. Static CharacteristicsDrain-source breakdown voltageV GS=0, I D=250µAV(BR)DSS60--V Gate threshold voltage, V GS = V DSI D=26µAV GS(th)0.8 1.4 1.8Zero gate voltage drain current V DS=60V, V GS=0, T j=25°CV DS=60V, V GS=0, T j=150°C I DSS----0.15µAGate-source leakage currentV GS=20V, V DS=0I GSS--10nA Drain-source on-state resistanceV GS=4.5V, I D=0.17AR DS(on)- 3.97.5ΩDrain-source on-state resistanceV GS=10V, I D=0.5AR DS(on)- 2.55Electrical Characteristics, at T j = 25 °C, unless otherwise specifiedParameter Symbol Conditions Values Unitmin.typ.max. Dynamic CharacteristicsTransconductance g fs V DS≥2*I D*R DS(on)max,I D=0.16A0.090.17-SInput capacitance C iss V GS=0, V DS=25V,f=1MHz -3445pFOutput capacitance C oss-7.29.6 Reverse transfer capacitance C rss- 2.8 4.2Turn-on delay time t d(on)V DD=30V, V GS=10V,I D=0.5A, R G=6Ω- 2.4 3.6nsRise time t r- 3.2 4.8Turn-off delay time t d(off)- 5.38Fall time t f- 3.6 5.4Gate Charge CharacteristicsGate to source charge Q gs V DD=48V, I D=0.5A-0.140.21nC Gate to drain charge Q gd-0.420.63 Gate charge total Q g V DD=48V, I D=0.5A,V GS=0 to 10V-1 1.5 Gate plateau voltage V(plateau)V DD=48V, I D = 0.5 A - 4.5-V Reverse DiodeInverse diode continuousforward currentI S T A=25°C--0.2A Inv. diode direct current, pulsed I SM--0.8 Inverse diode forward voltage V SD V GS=0, I F = I S-0.83 1.2VReverse recovery time t rr V R=30V, I F=l S,d i F/d t=100A/µs -14.221.3nsReverse recovery charge Q rr- 5.98.8nC1 Power dissipation P tot = f (T A)0.280.32W0.38 SN7002NPtot2 Drain currentID = f (T A)parameter: V GS≥ 10 VSN7002NID3 Safe operating areaI D = f ( V DS )parameter : D = 0 , T= 25 °CID4 Transient thermal impedanceZ thJA = f (t p)parameter : D = t p/T101010101010310K/WSN7002NZthJA5 Typ. output characteristicI D = f (V DS)parameter: T j = 25 °C, V GS0.75A1ID10V7V6V5V4.5V6 Typ. drain-source on resistanceR DS(on) = f (ID)parameter: T j = 25 °C, V GSRDS(on)7 Typ. transfer characteristicsI D= f ( V GS ); V DS≥ 2 x I D x R DS(on)maxparameter: T j = 25 °CID8 Typ. forward transconductanceg fs = f(I D)parameter: T j = 25 °Cgfs9 Drain-source on-state resistance R DS(on) = f (T j )parameter : I D = 0.5 A, V GS= 10 V12Ω15SN7002NR D S (o n)10 Typ. gate threshold voltage V GS(th) = f (T j )parameter: V GS = V DS ; I D =26µAV G S (t h)11 Typ. capacitances C = f (V DS )parameter: V GS =0, f =1 MHz, T j = 25 °CC12 Forward character. of reverse diode I F = f (V SD )parameter: TI F13 Typ. gate chargeV GS = f (Q G ); parameter: V DS , I D = 0.2 A pulsed, Tj = 25 °C12V16 SN7002NV G S14 Drain-source breakdown voltage V (BR)DSS = f (T j )SN7002NV (B R )D S SPublished byInfineon Technologies AG,Bereichs KommunikationSt.-Martin-Strasse 53,D-81541 München© Infineon Technologies AG 1999All Rights Reserved.Attention please!The information herein is given to describe certain components and shall not be considered as warranted characteristics.Terms of delivery and rights to technical change reserved.We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.Infineon Technologies is an approved CECC manufacturer.InformationFor further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). WarningsDue to technical requirements components may contain dangerous substances.For information on the types in question please contact your nearest Infineon Technologies Office.Infineon Technologies Components may only be used in life-support devices or systems with the expresswritten approval of Infineon Technologies, if a failure of such components can reasonably be expected tocause the failure of that life-support device or system, or to affect the safety or effectiveness of that deviceor system Life support devices or systems are intended to be implanted in the human body, or to supportand/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the healthof the user or other persons may be endangered.。

TSM2N700260V N-Channel Enhancement Mode MOSFETV DS = 60VR DS (on), Vgs @ 10V, Ids @ 500mA = 7.5ΩR DS (on), Vgs @ 5V, Ids @ 50mA = 13.5ΩFeaturesAdvanced trench process technologyHigh density cell design for low on-resistanceHigh input impedanceHigh speed switchingNo minority carrier storage timeCMOS logic compatible inputNosecondarybreakdownCompact and low profile SOT-23 packageBlock Diagram Ordering InformationPart No. Packing PackageTSM2N7002CX Tape&Reel SOT-23Absolute Maximum Rating (Ta = 25o C unless otherwise noted)Parameter SymbolLimitUnit Drain-Source Voltage V DS 60 VGate-Source Voltage V GS ±20 VContinuous Drain Current I D115 mAPulsed Drain Current I DM 800 mATa = 25 o C 225mWMaximum Power DissipationTa > 25 o CP D1.8 MW/ o COperating Junction Temperature T J +150 o COperating Junction and Storage Temperature Range T J, T STG- 55 to +150 o CThermal PerformanceParameter SymbolLimitUnit Lead Temperature (1/8” from case) T L 5 SJunction to Ambient Thermal Resistance (PCB mounted) Rθja 417 o C/WNote: Surface mounted on FR4 board t<=5sec.Pin assignment:1. Gate2. Source3. DrainElectrical CharacteristicsTj = 25 oC unless otherwise notedParameter Conditions Symbol Min Typ Max UnitStaticDrain-Source Breakdown Voltage V GS = 0V, I D = 10uA BV DSS 60 -- -- V Drain-Source On-State Resistance V GS = 10V, I D = 500mA R DS(ON) -- -- 7.5 Drain-Source On-State Resistance V GS = 5V, I D = 50mA R DS(ON) -- -- 13.5 Ω Gate Threshold Voltage V DS = V GS , I D = 250uA V GS(TH) 1.0-- 2.5 VZero Gate Voltage Drain Current V DS = 60V, V GS = 0V I DSS -- -- 1.0 uA Gate Body Leakage V GS = ± 20V, V DS = 0V I GSS -- -- ± 100 nA On-State Drain CurrentV DS 2V, V GS = 10VI D(ON) 500 -- -- mADynamicTurn-On Rise Time t r -- -- 20 Turn-Off Fall Time V DD = 25V, R L = 50Ω, I D = 500mA, V GEN = 10V, R G = 25Ωt f -- -- 40 nSInput Capacitance C iss -- 50 -- Output CapacitanceC oss -- 25 -- Reverse Transfer CapacitanceV DS = 25V, V GS = 0V, f = 1.0MHzC rss -- 5 --pF Source-Drain DiodeMax. Diode Forward CurrentI S -- -- 115 mA Diode Forward VoltageI S = 115mA, V GS = 0VV SD -- 1.3 1.5 VNote : pulse test: pulse width <=300uS, duty cycle <=2%。

OCXO SERIES 4000n FEATURES APPLICATIONS Excellent frequency stability - SATCOMMechanical / Electrical frequency adjustment available - BASE STATIONS- TEST INSTRUMENTSn ELECTRICAL PERFORMANCEPARAMETER OCXO SERIES 4000AT CUT CRYSTAL SC CUT CRYSTAL Supply voltage, nom. 15V, 12V, 5V ±5% StandardPower dissipation steady state 2.5 Watt Max.Heat up power 5 Watt MaxHeat up time. 7 min MaxFrequency range 1 To 160 MHz StandardFrequency Adjustment:Electrical (0 to 5V) Electrical (0 to 10V) Mechanical ±10PPM Min±15PPM Min±1.5PPM Min±0.7PPM Min±1PPM Min±0.6 PPM Min±0.05 PPM±0.1 PPM±0.002 PPM±0.005 PPMFreq. stability vs. temperatureLX: 0°C to 60°CFZ: -30°C to 70°C(Standard, contact factory for different temp ranges and stabilities) Freq. stability vs. supplychanges±0.005 PPM Max for ±5% Change ±0.002 PPM Max for ±5% ChangeFreq. stability vs. loadchanges±0.005 PPM Max for ±5% Change ±0.001 PPM Max for ±5% ChangeLong term stability (Aging) ± 1.5 PPM Max for 10 Years± 0.3 PPM Max for 1 Years±0.002 PPM/Day Max. ±0.6 PPM Max for 10 Years ±0.05 PPM Max for 1 Years ±0.0005 PPM/Day Max.Output HCMOS/TTL/Sine 0 to +13dBm Harmonics, Sub Harmonics -30dBc(Sine Output)Spurious -75dBc(Sine Output)Duty cycle 40/60% to 60/40%(HCMOS)Rise / fall time 10nS Max. (HCMOS,10%~90%Vout, 90%~10%Vout) Short term Stability (10MHz) 1 E-10 /Sec 5 E-11 /SecPhase Noise typical under static conditions(Sine Output 10MHZ) Offset Phase Noise10Hz -95 dBc/Hz100Hz -125 dBc/Hz1000Hz -135 dBc/Hz10000Hz -150 dBc/HzOffset Phase Noise10Hz -115 dBc/Hz100Hz -135 dBc/Hz1000Hz -145 dBc/Hz10000Hz -150 dBc/HzNote: All Typical parameters for a 10MHz output and 5V Supply, for different frequencies consult factoryn HOW TO ORDER (PART NUMBER)Prefix Output Type Cut TypeSeries Revision Temperature Range Stability FrequencySupply Voltage OX1:TTL 2:HCMOS 3:ACMOS 4:LVCMOS 5:100K ECL 6:SINE 7:10K ECL 8: PECL 9:CUSTOM0:AT (No Vcontrol ) 1: SC (No Vcontrol ) 2: AT (Mechanical Adj) 3: SC (Mechanical Adj) 4: AT (Elect Vcontrol) 5: SC (Elect Vcontrol) 6: AT (Mech & Elect.) 7: SC (Mech & Elect.)4X:4000 40:Height=1”/25.4mm41:Height=2”/50.8mm42:Height=4”/101.6mm44~49:Odd HeightAFirst letter Lowest Temperature,Second letter Highest Temperature: From A=-55°C to Z=+70°C, Then: 1=+75°C, 2=+80°C, 3=+85°C… in 5°C steps Example: LZ: +0°C to +70°C LX: +0°C to +60°C FZ: -30°C to +70°C D3: -40°C to +85°CValue x10E-2 in PPMExample 28=0.28PPM 10= 0.1PPMIn MHZ5: 5V 12; 12V 15; 15V。

MAX541/MAX542串行输入，电压输出，16位的数字 - 模拟转换器（DAC）的操作从单一的+5 V电源。

他们提供的16位performance随温度（±1LSB INL和DNL）无任何调整。

DAC输出缓冲，结果ING在一个低电源的0.3毫安电流和低失调错误的1LSB。

DAC输出范围为0V至VREF。

对于双极歌剧TION，匹配缩放电阻器中提供了MAX542为使用外部精密运算放大器（如MAX400），产生一个± VREF输出摆动。

MAX542还包括开尔文检测CON -nections为参考和模拟接地引脚降低布局敏感度。

一个16位串行字是用来加载数据到DAC闩锁。

10MHz时，3线串行接口兼容与SPI™/ QSPI™/ MICROWIRE™，它也接口直接与光耦合器需要的应用程序隔离TION。

上电复位电路清除DAC输出0V （单极模式）电源时，最初应用。

MAX541是8引脚塑料DIP和SO包。

MAX542是14引脚塑料DIP和SO封装。

特点全部16位性能，无需调整+5 V的单电源供电低功耗：1.5MW1碌小号建立时间非缓冲电压输出直接驱动60K鈩负载SPI / QSPI / Microwire兼容串行接口上电复位电路清除DAC输出0V（单极模式）施密特触发器输入直接光电耦合器接口引脚：1-RFB-反馈电阻。

连接到外部运算放大器的双极模式的输出。

2-OUT-DAC输出电压3-AGNDF-模拟地（力）4- AGNDS -模拟地（感）5-REFS-参考电压输入（感）。

REFS 连接到外部+2.5 V基准。

6- REFF-参考电压输入（强制）。

REFF 连接到外部+2.5 V基准。

7- CS-片选输入8- SCLK-串行时钟输入。

占空比必须在40％和60％。

9-NC-无连接。

在内部没有连接。

10- DIN-串行数据输入11-LDAC-LDAC输入。

下降沿更新内部DAC锁存器。