UF5407-TB中文资料

ąFEATURESFully Differential High Impedance Voltage SensingAccurate Current Amplifier for PrecisePACKAGING INFORMATIONOrderable Device Status(1)PackageType PackageDrawingPins PackageQtyEco Plan(2)Lead/Ball Finish MSL Peak Temp(3)UC1907J OBSOLETE CDIP J16TBD Call TI Call TI UC1907J883B OBSOLETE CDIP J16TBD Call TI Call TI UC1907L OBSOLETE LCCC FK20TBD Call TI Call TI UC1907L883B OBSOLETE LCCC FK20TBD Call TI Call TIUC2907DW ACTIVE SOIC DW1640Green(RoHS&no Sb/Br)CU NIPDAU Level-2-260C-1YEARUC2907DWG4ACTIVE SOIC DW1640Green(RoHS&no Sb/Br)CU NIPDAU Level-2-260C-1YEARUC2907DWTR ACTIVE SOIC DW162000Green(RoHS&no Sb/Br)CU NIPDAU Level-2-260C-1YEARUC2907DWTRG4ACTIVE SOIC DW162000Green(RoHS&no Sb/Br)CU NIPDAU Level-2-260C-1YEAR UC2907J OBSOLETE CDIP J16TBD Call TI Call TIUC2907N ACTIVE PDIP N1625Green(RoHS&no Sb/Br)CU NIPDAU N/A for Pkg TypeUC2907NG4ACTIVE PDIP N1625Green(RoHS&no Sb/Br)CU NIPDAU N/A for Pkg TypeUC3907DW ACTIVE SOIC DW1640Green(RoHS&no Sb/Br)CU NIPDAU Level-2-260C-1YEARUC3907DWG4ACTIVE SOIC DW1640Green(RoHS&no Sb/Br)CU NIPDAU Level-2-260C-1YEARUC3907DWTR ACTIVE SOIC DW162000Green(RoHS&no Sb/Br)CU NIPDAU Level-2-260C-1YEARUC3907DWTRG4ACTIVE SOIC DW162000Green(RoHS&no Sb/Br)CU NIPDAU Level-2-260C-1YEAR UC3907J OBSOLETE CDIP J16TBD Call TI Call TIUC3907N ACTIVE PDIP N1625Green(RoHS&no Sb/Br)CU NIPDAU N/A for Pkg TypeUC3907NG4ACTIVE PDIP N1625Green(RoHS&no Sb/Br)CU NIPDAU N/A for Pkg Type(1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan-The planned eco-friendly classification:Pb-Free(RoHS),Pb-Free(RoHS Exempt),or Green(RoHS&no Sb/Br)-please check /productcontent for the latest availability information and additional product content details.TBD:The Pb-Free/Green conversion plan has not been defined.Pb-Free(RoHS):TI's terms"Lead-Free"or"Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all6substances,including the requirement that lead not exceed0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free(RoHS Exempt):This component has a RoHS exemption for either1)lead-based flip-chip solder bumps used between the die and package,or2)lead-based die adhesive used between the die and leadframe.The component is otherwise considered Pb-Free(RoHS compatible)as defined above.Green(RoHS&no Sb/Br):TI defines"Green"to mean Pb-Free(RoHS compatible),and free of Bromine(Br)and Antimony(Sb)based flame retardants(Br or Sb do not exceed0.1%by weight in homogeneous material)(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications,and peak soldertemperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.TI bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TI to Customer on an annual basis.TAPE AND REELINFORMATION*All dimensionsare nominalDevicePackage Type Package Drawing Pins SPQReel Diameter (mm)Reel Width W1(mm)A0(mm)B0(mm)K0(mm)P1(mm)W (mm)Pin1Quadrant UC2907DWTR SOIC DW 162000330.016.410.8510.8 2.712.016.0Q1UC3907DWTRSOICDW162000330.016.410.8510.82.712.016.0Q1PACKAGE MATERIALS INFORMATION29-Jul-2008分销商库存信息:TIUC3907DW UC2907DW UC3907NUC3907DWTR UC2907DWTR UC2907DWTRG4 UC3907NG4UC3907DWG4UC2907NUC2907NG4UC2907DWG4。

LM5007High Voltage (80V)Step Down Switching RegulatorGeneral DescriptionThe LM5007Step Down Switching Regulator features all of the functions needed to implement low cost,efficient,Buck bias regulators.This high voltage regulator contains an 80V,0.7A N-Channel Buck Switch.The device is easy to apply and is provided in the MSOP-8and the thermally enhanced LLP-8packages.The regulator is based on a hysteretic control scheme using an on time inversely proportional to V IN .This feature allows the operating frequency to remain relatively constant with load and input voltage variations.The hysteretic control requires no control loop compensation,while providing very fast load transient response.An intelli-gent current limit is implemented in the LM5007with forced off time that is inversely proportional to V OUT .This current limiting scheme reduces load current foldback.Additional protection features include:Thermal Shutdown,Vcc under-voltage lockout,gate drive undervoltage lockout,and Max Duty Cycle limiter.Featuresn Integrated 80V,0.7A N-Channel Buck Switch n Internal HV Vcc Regulatorn No Control Loop Compensation Required n Ultra-Fast Transient Responsen On Time Varies Inversely with Line Voltagen Operating Frequency Nearly Constant with Varying Line Voltagen Adjustable Output Voltage n Highly Efficient Operation n Precision Reference n Low Bias Currentn Intelligent Current Limit Protection n Thermal ShutdownnExternal Shutdown ControlTypical Applicationsn Non-Isolated Buck Regulatorn Secondary High Voltage Post Regulator n +42V Automotive SystemsPackagen MSOP -8n LLP -8(4mm x 4mm)Connection Diagram200783028-Lead MSOP,LLPOrdering InformationOrder Number Package Type NSC Package Drawing Supplied AsLM5007MM MSOP-8MUA08A 1000Units on Tape and Reel LM5007MMX MSOP-8MUA08A 3500Units on Tape and Reel LM5007SD LLP-8SDC08A Available Soon LM5007SDXLLP-8SDC08AAvailable SoonJanuary 2004LM5007High Voltage (80V)Step Down Switching Regulator©2004National Semiconductor Corporation Typical Application Circuit and Block Diagram20078301L M 5007 2Pin DescriptionPIN NAME DESCRIPTION APPLICATION INFORMATION 1SW Switching Node Power switching node.Connect to the LC outputfilter.2BST Boost Boot–strap capacitor input An external capacitor is required between the BSTand the SW pins.A0.01uF ceramic capacitor isrecommended.An internal diode between Vcc andBST completes the Buck gate drive bias network.3R CL Current Limit OFF time programming pinToff=10-5/(0.59+(FB/7.22x10−6x R CL))A resistor between this pin and RTN determines the variation of off time,along with the FB pin voltage, per cycle while in current limit.The off time is preset to17uS if FB=0V and decreases as the FB pin voltage increases.4RTN Circuit Ground5FB Feedback Signal from Regulated Output This pin is connected to the inverting input of theinternal regulation comparator.The regulationthreshold is2.5V.6R ON On time set pinTon=1.42x10-10R ON/Vin A resistor between this pin and Vin sets the switch on time as a function of Vin.The minimum recommended on time is300ns at the maximum input voltage.7Vcc Output from the internal high voltage biasregulator.V CC is nominally regulated to7Volts.If an auxiliary voltage is available to raise the voltage on this pin,above the regulation setpoint (7V),the internal series pass regulator will shutdown,reducing the IC power dissipation.Do not exceed14V.This output provides gate drive power for the internal Buck switch.An internal diode is provided between this pin and the BST pin.A local 0.1uF decoupling capacitor is recommended.Series pass regulator is current limited to10mA.8Vin Input supply voltage Recommended operating range:9V to75VLM50073Absolute Maximum Ratings (Note 1)If Military/Aerospace specified devices are required,please contact the National Semiconductor Sales Office/Distributors for availability and specifications.V IN to GND 80V BST to GND94V SW to GND (Steady State)-1VESD Rating (Note 5)Human Body Model 2kV Machine Model 200V BST to V CC80V BST to SW 14V V CC to GND14V All Other Inputs to GND-0.3to 7V Lead Temperature (Soldering 4sec)260˚CStorage Temperature Range-55˚C to +150˚COperating Ratings (Note 1)V IN9V to 75VJunction Temperature−40˚C to +125˚CElectrical CharacteristicsSpecifications with standard typeface are for T J =25˚C,and those with boldface type apply over full Operating Junction Temperature range .V IN =48V,unless otherwise stated (Note 3).Symbol ParameterConditionsMinTypMaxUnitsStartup Regulator V CC Reg V CC Regulator Output 6.677.4V V CC Current Limit(Note 4)11mAV CC SupplyV CC undervoltage Lockout Voltage (V CC increasing) 6.3V V CC Undervoltage Hysteresis 206mV V CC UVLO Delay (filter)3µs Operating Current (ICC)Non-Switching,FB =3V 500675µA Shutdown/Standby CurrentR ON =0V100200µASwitch CharacteristicsBuck Switch Rds(on)I TEST =200mA,VBST −VSW =6.3V (Note 6)0.741.34ΩGate Drive UVLO (VBST –VSW)Rising3.44.55.5V Gate Drive UVLO Hysteresis 400mV Breakdown Voltage V IN to Ground T J =25˚CT J =-40˚C to +125˚C 8076V Breakdown Voltage BST to V CCT J =25˚CT J =-40˚C to +125˚C8076VCurrent LimitCurrent Limit Threshold 535725900mA Current Limit Response Time I switch Overdrive =0.1A Time to Switch Off 225ns OFF time generator (test 1)FB=0V,RCL =100K 17µs OFF time generator (test 2)FB=2.3V,RCL =100K 2.65µs On Time GeneratorTON -1Vin =10V Ron =200K 2.15 2.77 3.5µs TON -2Vin =75V Ron =200K 290390490ns Remote Shutdown Threshold Rising0.450.7 1.1V Remote Shutdown Hysteresis40mVL M 5007 4Electrical Characteristics(Continued)Specifications with standard typeface are for T J=25˚C,and those with boldface type apply over full Operating Junction Temperature range.V IN=48V,unless otherwise stated(Note3).Symbol Parameter Conditions Min Typ Max Units Minimum Off TimeMinimum Off Timer FB=0V300ns Regulation and OV ComparatorsFB Reference Threshold Internal referenceTrip point for switch ON2.445 2.5 2.550VFB Over-Voltage Threshold Trip point for switch OFF 2.875VFB Bias Current100nA Thermal ShutdownTsd Thermal Shutdown Temp.165˚C Thermal Shutdown Hysteresis25˚C Thermal ResistanceθJA Junction to Ambient MUA Package200˚C/WSDC Package40˚C/WNote1:Absolute Maximum Ratings are limits beyond which damage to the device may occur.Operating Ratings are conditions under which operation of the device is intended to be functional.For guaranteed specifications and test conditions,see the Electrical Characteristics.Note2:For detailed information on soldering plastic MSOP and LLP packages,refer to the Packaging Data Book available from National Semiconductor Corporation.Note3:All limits are guaranteed.All electrical characteristics having room temperature limits are tested during production with T A=T J=25˚C.All hot and cold limits are guaranteed by correlating the electrical characteristics to process and temperature variations and applying statistical process control.Note4:The V CC output is intended as a self bias for the internal gate drive power and control circuits.Device thermal limitations limit external loading.Note5:The human body model is a100pF capacitor discharge through a1.5kΩresistor into each pin.The machine model is a200pF capacitor discharged directly into each pin.The machine model ESD compliance level for Pin5is150V.The human body ESD compliance level for Pin7and8is1000V.Note6:For devices procurred in the LLP-8package the Rds(on)limits are guaranteed by design characterization data only.Detailed Operating DescriptionThe LM5007Step Down Switching Regulator features all of the functions needed to implement low cost,efficient,Buck bias regulators.This high voltage regulator contains an80V, 0.7A N-Channel Buck Switch.The device is easy to apply and is provided in the MSOP-8and the thermally enhanced LLP-8packages.The regulator is based on a hysteretic control scheme using an on time inversely proportional to Vin.This feature allows the operating frequency to remain relatively constant with load and input voltage variations.The hysteretic control requires no control loop compensation, while providing very fast load transient response.An intelli-gent current limit scheme is implemented in the LM5007with forced off time,after current limit detection,which is in-versely proportional to Vout.This current limiting scheme reduces load current foldback.Additional protection features include:Thermal Shutdown,Vcc undervoltage lockout,Gate drive undervoltage lockout and Max Duty Cycle limiter.The LM5007can be applied in numerous applications to effi-ciently regulate step down higher voltage inputs.This regu-lator is well suited for48Volt Telcom and the new42V Automotive power bus ranges.Hysteretic Control Circuit OverviewThe LM5007is a Buck DC-DC regulator that uses an on time control scheme.The on time is programmed by an external resistor and varies inversely with line input voltage(Vin).The core regulation elements of the LM5007are the feedback comparator and the on time one-shot.The regulator output voltage is sensed at the feedback pin(FB)and is compared to an internal reference voltage(2.5V).If the FB signal is below the reference voltage,the buck switch is turned on fora fixed time pulse determined by the line voltage and aprogramming resistor(R ON).Following the on period theswitch will remain off for at least the minimum off timer periodof300ns.If the FB pin voltage is still below the referenceafter the300ns off time,the switch will turn on again foranother on time period.This switching behavior will continueuntil the FB pin voltage reaches the reference voltage level.The LM5007operates in discontinuous conduction mode atlight load currents or continuous conduction mode at heavierload currents.In discontinuous conduction mode,currentthrough the output inductor starts at zero and ramps up to apeak value during the buck switch on time and then back tozero during the off time.The inductor current remains at zerountil the next on time period starts when FB falls below theinternal reference.In discontinuous mode the operating fre-quency can be relatively low and will vary with load.There-fore at light loads the conversion efficiency is maintained,since the switching losses decrease with the reduction inload current and switching frequency.The approximate dis-continuous mode operating frequency can be calculated asfollows:In continuous conduction mode,current flows continuouslythrough the inductor and never ramps down to zero.In thismode the operating frequency is greater than the discontinu-ous mode frequency and remains relatively constant withload and line variations.The approximate continuous modeoperating frequency can be calculated as follows:LM50075Hysteretic Control Circuit Overview (Continued)The output voltage (Vout)can be programmed by two exter-nal resistors as shown in Figure 1.The regulation point can be calculated as follows:V OUT =2.5x (R1+R2)/R2The feedback comparator in hysteretic regulators depend upon the output ripple voltage to switch the output transistor on and off at regular intervals.In order for the internal comparator to respond quickly to changes in output voltage,proportional to inductor current,a minimum amount of ca-pacitor Equivalent Series Resistance (ESR)is required.A ripple voltage of 25mV to 50mV is recommended at the feedback pin (FB)for stable operation.In cases where the intrinsic capacitor ESR is too small,additional series resis-tance may be added.For applications where lower output voltage ripple is re-quired the load can be connected directly to the low ESRoutput capacitor,as shown in Figure 1.The series resistor (R)will degrade the load regulation.Another technique for enhancing the ripple voltage at the FB pin is to place a capacitor in parallel with the feedback divider resistor R1.The addition of the capacitor reduces the attenuation of the ripple voltage from the feedback dividerHigh Voltage Bias RegulatorThe LM5007contains an internal high voltage bias regulator.The input pin (Vin)can be connected directly to line voltages from 9to 75Volts.To avoid supply voltage transients due to long lead inductances on the input pin (Vin Pin 8),it is always recommended to connect low ESR ceramic chip capacitor ()0.1µF)between "Vin"pin and "RTN"pin (pin 4),located close to LM5007.The regulator is internally current limited to 10mA.Upon power up,the regulator is enabled and sources current into an external capacitor connected to the Vcc pin.When the voltage on the Vcc pin reaches the regulation point of 7V,the controller output is enabled.An external auxiliary supply voltage can be applied to the Vcc pin.If the auxiliary voltage is greater than 7Volts the internal regulator will essentially shutoff,thus reducing inter-nal power dissipation.20078305FIGURE 1.Low Ripple Output ConfigurationL M 5007 6High Voltage Bias Regulator(Continued)Over-Voltage ComparatorThe over-voltage comparator is provided to protect the out-put from overvoltage conditions due to sudden input line voltage changes or output loading changes.The over-voltage comparator monitors the FB pin versus an internal 2.875V reference(OV_REF).If the voltage at FB rises above OV_REF the comparator immediately terminates the buck switch on time pulse.ON Time generator and Shutdown The on time of the LM5007is set inversely proportional to the input voltage by an external resistor connected between Ron and Vin.The Ron terminal is a low impedance input biased at approximately1.5V.Thus the current through the resistor and into the Ron terminal is approximately propor-tional to Vin and used internally to control the on timer.This scheme of input voltage feed-forward hysteretic operation achieves nearly constant operational frequency over varying line and load conditions.The on time equation for the LM5007is:Ton=1.42x10-10x R ON/V INThe R ON pin of the LM5007also provides a shutdown func-tion which disables the regulator and significantly decreases quiescent power dissipation.By pulling the R ON pin to below 0.7V logic threshold activates the low power shutdown mode.The V IN quiescent current in the shutdown mode is approximately100µA internal to the LM5007plus the current in the R ON resistor.20078306FIGURE2.Self Biased ConfigurationLM50077ON Time generator and Shutdown(Continued)Current LimitThe LM5007contains an intelligent current limit off timer intended to reduce the foldback characteristic inherent with fixed off-time over-current protection.If the current in the Buck switch exceeds 725mA the present cycle on time is immediately terminated (cycle by cycle current limit).Follow-ing the termination of the cycle a non-resetable current limit off timer is initiated.The duration of the off time is a function of the external resistor (R CI )and the FB pin voltage.When the FB pin voltage equals zero,the current limit off time is internally preset to 17uS.This condition occurs in short circuit operation when a maximum amount of off time is required.In cases of overload (not complete short circuit)the current limit off time can be reduced as a function of the output voltage (measured at the FB pin).Reducing the off time with smaller overloads reduces the amount of foldback and also reduces the initial start-up time.The current limit off time for a given FB pin voltage and R CI resistor can be calculated by the following equation:Toff =10-5/(0.59+(V FB /7.22x 10-6x R CL ))Applications utilizing low resistance inductors and/or a low voltage drop rectifier may require special evaluation at high line,short circuit conditions.In this special case the preset 17uS (FB =0V)off time may be insufficient to balance the inductor volt*time product.Additional inductor resistance,output resistance or a larger voltage drop rectifier may be necessary to balance the inductor cycle volt*time product and limit the short circuit current.N -Channel Buck Switch and DriverThe LM5007integrates an N-Channel Buck switch and as-sociated floating high voltage gate driver.This gate driver circuit works in conjunction with an external bootstrap ca-pacitor and an internal high voltage diode.The bootstrapcapacitor is charged by V CC through the internal high voltage diode.A 0.01uF ceramic capacitor connected between the BST pin and SW pin is recommended.During each cycle when the Buck switch turns off,the SW pin is approximately 0V.When the SW pin voltage is low,the bootstrap capacitor will be charged from Vcc through the internal diode.The minimum off timer,set to 300ns,ensures that there will be a minimum interval every cycle to recharge the bootstrap capacitor.An external re-circulating diode from the SW pin to ground is necessary to carry the inductor current after the internal Buck switch turns off.This external diode must be of the Ultra-fast or Schottky type to reduce turn-on losses and current over-shoot.The reverse voltage rating of the re-circulating diode must be greater than the maximum line input voltage.Thermal ProtectionInternal Thermal Shutdown circuitry is provided to protect the integrated circuit in the event the maximum junction tem-perature is exceeded.When thermal protection is activated,typically at 165degrees Celsius,the controller is forced into a low power reset state,disabling the output driver.This feature is provided to prevent catastrophic failures from ac-cidental device overheating.20078307FIGURE 3.Shutdown ImplementationL M 50078Operational Waveforms20078308LM5007Operation:V OUT=10V,V IN=20V,I OUT=250mA CH1:Switch Node,CH2:V OUT(AC),CH4:Inductor CurrentFIGURE4.Operational Waveforms20078309LM5007Operation:V OUT=10V,V IN=75V,I OUT=250mA CH1:Switch Node,CH2:V OUT(AC),CH4:Inductor CurrentFIGURE5.LM500710V Output Efficiency20078310FIGURE6.Current Limit V FB vs T OFFR CL=50k-600k20078311FIGURE7.V IN vs T ONR ON=100k,200k,300k20078312FIGURE8.LM5007910V,400mA Demo Board Bill of MaterialsITEM PART NUMBER DESCRIPTION VALUE C1C4532X7R2A105M CAPACITOR,CER,TDK 1µ,100V C2C4532X7R1E156M CAPACITOR,CER,TDK 15µ,25V C3C1206C104K5RAC CAPACITOR,CER,KEMET 0.1µ,50V C4C1206C103K5RAC CAPACITOR,CER,KEMET 0.01µ,50V C5C3216X7R2A104KTCAPACITOR,CER,TDK 0.1µ,100VD1MURA110T3DIODE,100V,ON SEMI L1SLF7045T-101MR60-1BUCK INDUCTOR,TDK100µH R1CRCW12062003F RESISTOR 200K R2CRCW12061003F RESISTOR 100K R3CRCW12063011F RESISTOR 3.01K R4CRCW12061001F RESISTOR 1K R5CRCW12061R00FRESISTOR1U1LM5007REGULATOR,NATIONALL M 5007 10LM5007 Physical Dimensions inches(millimeters)unless otherwise noted8-Lead MSOP PackageNS Package Number MUA08A11Physical Dimensionsinches (millimeters)unless otherwise noted (Continued)8-Lead LLP PackageNS Package Number SDC08ALIFE SUPPORT POLICYNATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION.As used herein:1.Life support devices or systems are devices or systems which,(a)are intended for surgical implant into the body,or (b)support or sustain life,and whose failure to perform when properly used in accordance with instructions for use provided in the labeling,can be reasonably expected to result in a significant injury to the user. 2.A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system,or to affect its safety or effectiveness.BANNED SUBSTANCE COMPLIANCENational Semiconductor certifies that the products and packing materials meet the provisions of the Customer Products Stewardship Specification (CSP-9-111C2)and the Banned Substances and Materials of Interest Specification (CSP-9-111S2)and contain no ‘‘Banned Substances’’as defined in CSP-9-111S2.National Semiconductor Americas Customer Support CenterEmail:new.feedback@ Tel:1-800-272-9959National SemiconductorEurope Customer Support CenterFax:+49(0)180-5308586Email:europe.support@Deutsch Tel:+49(0)6995086208English Tel:+44(0)8702402171Français Tel:+33(0)141918790National Semiconductor Asia Pacific Customer Support CenterEmail:ap.support@National SemiconductorJapan Customer Support Center Fax:81-3-5639-7507Email:jpn.feedback@ Tel:81-3-5639-7560L M 5007H i g h V o l t a g e (80V )S t e p D o w n S w i t c h i n g R e g u l a t o rNational does not assume any responsibility for use of any circuitry described,no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.。

NPN Silicon RF Transistor Preliminary dataFor highest gain low noise amplifier at 1.8 GHzOutstanding G ms = 21 dB Noise Figure F = 0.9 dBGold metallization for high reliability SIEGET 45 - LineVPS056054213ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!Type Marking Pin Configuration Package BFP 540ATs1 = B2 = E3 = C4 = ESOT-343Maximum Ratings ParameterSymbol Value Unit Collector-emitter voltage V CEO 4.5VCollector-base voltage V CBO 15Emitter-base voltage V EBO 1Collector current I C 80mA Base currentI B 4Total power dissipation , T S = 77 °C 1)P tot 250mW Junction temperature T j 150°CAmbient temperature T A -65 ... 150Storage temperatureT stg-65 (150)Thermal Resistance Junction - soldering pointR thJS290K/W1T Sis measured on the emitter lead at the soldering point to the pcbElectrical Characteristics at T A = 25°C, unless otherwise specified.ParameterSymbol Values Unitmin.max.typ.DC characteristics5V (BR)CEO Collector-emitter breakdown voltageI C = 1 mA, I B = 06.54.5V -200-nA I CBO Collector-base cutoff current V CB = 5 V, I E = 0-70µA -I EBO Emitter-base cutoff current V EB = 1 V, I C = 0 110DC current gainI C = 20 mA, V CE = 3.5 Vh FE200-50AC characteristics (verified by random sampling)f T 2029Transition frequencyI C = 50 mA, V CE = 4 V, f = 1 GHz GHz -C cb -0.240.14pFCollector-base capacitance V CB = 2 V, f = 1 MHzC ce --0.33Collector-emitter capacitance V CE = 2 V, f = 1 MHzC eb -0.7Emitter-base capacitance V EB = 0.5 V, f = 1 MHz -F-0.9dBNoise figureI C = 5 mA, V CE = 2 V, Z S = Z Sopt , f = 1.8 GHz1.3G ms--21Power gain, maximum stable 1)I C = 20 mA, V CE = 2 V, Z S = Z Sopt , Z L = Z Lopt , f = 1.8 GHz|S 21|21618.5-Insertion power gainI C = 20 mA, V CE = 2 V, f = 1.8 GHz, Z S = Z L = 50dBdBm- -IP 3Third order intercept point at outputV CE = 2 V, f = 1.8 GHz, Z S =Z Sopt , Z L =Z Lopt , I C = 20 mA I C = 7 mA24 20- -1dB compression pointV CE = 2 V, f = 1.8 GHz, Z S =Z Sopt , Z L =Z Lopt , I C = 20 mA I C = 7 mA- -12 4P -1dB- -1G ms = |S 21 / S 12|Common Emitter S-Parametersf S11S21S12S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG V CE = 2 V, I C = 20 mA0.01 0.1 0.5 1234560.59030.58270.47210.41480.4130.44260.50640.56230.5989-2.2-22.1-91.8-137.4178153133.2119.5109.642.17640.3326.56415.467.8975.2573.8953.0272.471179165.1121.296.572.956.541.628.116.20.00080.00680.02630.03970.06460.08920.11260.13130.152599.282.262.156.452.346.538.129.922.90.95670.94990.65330.39590.19120.09820.10220.14450.1764-0.6-12.1-48.1-68.2-90.7-117.9180147121.8V CE = 2V, I C = 5 mA0.01 0.1 0.5 1234560.93940.9370.9040.8230.680.63080.64420.67570.7029-0.7-7.6-37.9-73.1-130-170.9156.4134.7119.77.056.9226.5675.6873.9832.9132.2511.7651.439-179.5174.7152.312892.36745.627.512.70.0010.00870.04350.07820.10730.11110.10760.10280.106567.187.370.95225.712.34.93.77.10.99610.99760.94850.82830.59580.44710.35040.29870.2491-0.4-3.7-18-33.3-52.6-63.7-78.9-96.5-114.9Common Emitter Noise Parametersr n F50 2)f F min 1)|S21|2 2)R NG a 1)ΓoptdB dB MAG dB-ANGGHz dBV CE = 2 V, I C = 5 mA0.91.82.4 3 4 5 60.690.91.061.21.471.782.1122.717.615.213.611.5108.40.290.130.140.220.330.50.553486127163-153-126-10786.56.55.569180.160.130.130.110.120.180.360.860.931.131.311.672.172.9821.51714.111.99.57.95.61) Input matched for minimum noise figure, output for maximum gain 2) Z S = Z L = 50For more and detailed S- and Noise-parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies Application Notes CD-ROM or see Internet: /products/discrete/index.htmSPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :Transistor Chip DataIS =82.84aA VAF =28.383V NE = 3.19-VAR =19.705V NC = 1.172-RBM = 5.4 CJE = 1.8063fF TF = 6.76ps ITF =1mA VJC =0.81969V TR = 2.324ns MJS =0-XTI =3-BF =107.5-IKF =0.48731A BR = 5.5-IKR =0.02ARB = 1.3 RE =0.31111 VJE =0.8051V XTF =0.4219-PTF =0deg MJC =0.30232-CJS =0fF XTB =0-FC =0.73234-NF =1-ISE =11.15pA NR =1-ISC =19.237fA IRB =0.72983mARC =4 MJE =0.46576-VTF =0.23794V CJC =234fF XCJC =0.3-VJS =0.75V EG = 1.11eV TNOM300KAll parameters are ready to use, no scaling is necessaryboth leads are combined in one electrical connection.For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet:/products/discrete/index.htmFor non-linear simulation:Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators. Simulation of the package is not necessary for frequencies < 100MHz.For higher frequencies please add the wiring of the package equivalent circuitaround the non-linear transistor.Advantages of the common emitter configuration:Higher gain because of lower emitter inductance.Power is dissipated via the grounded emitter leads, because the chip is mounted on the copper emitter leadframe.Please note, that the broadest lead is the emitter lead.Total power dissipation P tot = f (T A*, T S) * Package mounted on epoxymWPtotTransition frequency f T =f (I C)f = 1 GHzV CE = parameter in VPermissible Pulse Load R thJS = f (t p)101010K/WRthJSPermissible Pulse LoadP totmax/P totDC = f (t p)Ptotmax/PtotDCPower gain G ma, G ms = f (I C) V CE = 2Vf = parameter in GHzGPower gain Gma, G ms, |S21|2 = f ( f )V CE = 2V, I C= 20 mAGCollector-base capacitance C cb = f (V CB)f = 1MHzCcbPower gain G ma, G ms = f (V CE)I C = 20 mAf= parameter in GHzGNoise figure F = f (I C) V CE = 2 V, Z S = Z SoptFNoise figure F= f (I C)V CE = 2 V, f = 1.8 GHzFNoise figure F= f ( f )V CE = 2 V, Z S = Z SoptFSource impedance for min.noise figure vs. FrequencyV CE = 2 V, I C = 5 mA / 20 mA+j50-j50。

NUF6402MN4-Channel EMI Filter withIntegrated ESD ProtectionThe NUF6402MN is a four −channel (C −R −C) Pi −style EMI filter array with integrated ESD protection. Its typical component values of R = 100 W and C = 17 pF deliver a cutoff frequency of 95 MHz and stop band attenuation greater than −30 dB from 800 MHz to 3.0 GHz.This performance makes the part ideal for parallel interfaces with data rates up to 64 Mbps in applications where wireless interference must be minimized. The specified attenuation range is very effective in minimizing interference from 2G/3G, GPS, Bluetooth ® and WLAN signals.The NUF6402MN is available in the low −profile 12−lead 1.35 mm x 3.0 mm DFN12 surface mount package.Features/Benefits•±8.0 kV ESD Protection on each channel (IEC61000−4−2 Level 4,Contact Discharge)•R/C Values of 100 W and 17 pF deliver Exceptional S21 Performance Characteristics of 95 MHz f 3dB and −30 dB Stop Band Attenuation from 800 MHz to 3.0 GHz•Integrated EMI/ESD System Solution in DFN Package Offers Exceptional Cost, System Reliability and Space Savings •This is a Pb −Free DeviceApplications•EMI Filtering for LCD and Camera Data Lines•EMI Filtering and Protection for I/O Ports and KeypadsFigure 1. Electrical SchematicSee Table 1 for pin descriptionn−45−40−35−30−25−20−15−10−501.E+061.E+071.E+08 1.E+091.E+10FREQUENCY (Hz)S 21 (d B )Figure 2. Insertion Loss Characteristic1DFN12CASE 506ADDevice PackageShipping †ORDERING INFORMATIONNUF6402MNT1GDFN12(Pb −Free)3000 / Tape & Reel MARKING DIAGRAM†For information on tape and reel specifications,including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.6402= Specific Device Code M = Month G = Pb −Free Package(Note: Microdot may be in either location)Figure 3. Pin Diagram(Bottom View)Table 1. FUNCTIONAL PIN DESCRIPTIONFilterDevice Pins Description1 & 12Zener and Ground Filter 1 2 & 11Filter + ESD Channel 1Filter 2 3 & 10Filter + ESD Channel 2Filter 3 4 & 9Filter + ESD Channel 3Filter 45 & 8Filter + ESD Channel 46 & 7Zener and Ground Ground PadGNDGroundMAXIMUM RATINGSParameterSymbol Value Unit ESD Discharge IEC61000−4−2Contact DischargeV PP 8.0kV Operating Temperature Range T OP −40 to 85°C Storage Temperature RangeT STG −55 to 150°C Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10seconds)T L260°CStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.ELECTRICAL CHARACTERISTICS (T J = 25°C unless otherwise noted)ParameterSymbol Test ConditionsMinTypMax Unit Maximum Reverse Working Voltage V RWM 5.0V Breakdown Voltage V BR I R = 1.0 mA 6.07.08.0V Leakage Current I R V RWM = 3.0 V 1001000nA Resistance R A I R = 20 mA 85100115W Diode Capacitance C d V R = 2.5 V, f = 1.0 MHz 1720pF Line CapacitanceC L V R = 2.5 V, f = 1.0 MHz 3440pF 3 dB Cut −Off Frequency (Note 1)f 3dB Above this frequency,appreciable attenuation occurs 95MHz 6 dB Cut −Off Frequencyf 6dBAbove this frequency,appreciable attenuation occurs175MHz1.50 W source and 50 W load termination.TYPICAL PERFORMANCE CURVES (T A = 25°C unless otherwise specified)−45−40−35−30−25−20−15−10−501.E+061.E+071.E+08 1.E+091.E+10FREQUENCY (Hz)S 21 (d B )−45−40−35−30−25−20−15−10−501.E+061.E+071.E+08 1.E+091.E+10FREQUENCY (Hz)S 21 (d B )REVERSE VOLTAGE (V)N O R M A L I Z E D C A P A C I T A N C E0.511.52123459092949698100102104106108110−40−20020406080TEMPERATURE (°C)R E S I S T A N C E (W )Figure 4. Insertion Loss Characteristic Figure 5. Analog Crosstalk CurveFigure 6. Typical Capacitance vs.Reverse Biased Voltage(Normalized Capacitance, Cd @ 2.5 V)Figure 7. Typical Resistance over TemperatureTheory of OperationThe NUF6402MN combines ESD protection and EMI filtering conveniently into a small package for today’s size constrained applications. The capacitance inherent to a typical protection diode is utilized to provide the capacitance value necessary to create the desired frequency response based upon the series resistance in the filter. By combining this functionality into one device, a large number of discrete components are integrated into one small package saving valuable board space and reducing BOM count and cost in the application.Application ExampleThe accepted practice for specifying bandwidth in a filter is to use the 3 dB cutoff frequency. Utilizing points such as the 6 dB or 9 dB cutoff frequencies results in signal degradation in an application. This can be illustrated in an application example. A typical application would include EMI filtering of data lines in a camera or display interface.In such an example it is important to first understand the signal and its spectral content. By understanding these things, an appropriate filter can be selected for the desired application. A typical data signal is pattern of 1’s and 0’s transmitted over a line in a form similar to a square wave.The maximum frequency of such a signal would be the pattern 1-0-1-0 such that for a signal with a data rate of 100 Mbps, the maximum frequency component would be 50 MHz. The next item to consider is the spectral content of the signal, which can be understood with the Fourier seriesapproximation of a square wave, shown below in Equations 1 and 2 in the Fourier series approximation.From this it can be seen that a square wave consists of odd order harmonics and to fully construct a square wave n must go to infinity. However, to retain an acceptable portion of the waveform, the first two terms are generally sufficient. These two terms contain about 85% of the signal amplitude and allow a reasonable square wave to be reconstructed.Therefore, to reasonably pass a square wave of frequency x the minimum filter bandwidth necessary is 3x . All ON Semiconductor EMI filters are rated according to this principle. Attempting to violate this principle will result in significant rounding of the waveform and cause problems in transmitting the correct data. For example, take the filter with the response shown in Figure 8 and apply three different data waveforms. To calculate these three different frequencies, the 3 dB, 6 dB, and 9 dB bandwidths will be used.Equation 1:x(t)+12)2p aS n +1ƪ12n *1sin((2n *1)w 0t)ƫ(eq. 1)Equation 2 (simplified form of Equation 1):x(t)+12)2p ƪsin(w 0t)1)sin(3w 0t)3)sin(5w 0t)5)AAA ƫ(eq. 2)M a g n i t u d e (d B )Frequency (Hz)100k 1M 100M1G 10G10M Figure 8. Filter BandwidthFrom the above paragraphs it is shown that the maximumsupported frequency of a waveform that can be passed through the filter can be found by dividing the bandwidth by a factor of three (to obtain the corresponding data ratemultiply the result by two). The following table gives the bandwidth values and the corresponding maximum supported frequencies and the third harmonic frequencies.Table 2. Frequency ChartBandwidth Maximum SupportedFrequencyThird Harmonic Frequency3 dB –100 MHz 33.33 MHz (f 1)100 MHz 6 dB –200 MHz 66.67 MHz (f 2)200 MHz 9 dB –300 MHz100 MHz (f 3)300 MHzConsidering that 85% of the amplitude of the square is in the first two terms of the Fourier series approximation most of the signal content is at the fundamental (maximum supported) frequency and the third harmonic frequency. If a signal with a frequency of 33.33 MHz is input to this filter,the first two terms are sufficiently passed such that the signal is only mildly affected, as is shown in Figure 9a. If a signalwith a frequency of 66.67 MHz is input to this same filter,the third harmonic term is significantly attenuated. This serves to round the signal edges and skew the waveform, as is shown in Figure 9b. In the case that a 100 MHz signal isinput to this filter, the third harmonic term is attenuated evenfurther and results in even more rounding of the signal edges as is shown in Figure 9c. The result is the degradation of the data being transmitted making the digital data (1’s and 0’s)more difficult to discern. This does not include effects of other components such as interconnect and other path losses which could further serve to degrade the signal integrity.While some filter products may specify the 6 dB or 9 dB bandwidths, actually using these to calculate supported frequencies (and corresponding data rates) results in significant signal degradation. To ensure the best signal integrity possible, it is best to use the 3 dB bandwidth to calculate the achievable data rate.Figure 9. Input and Output Waveforms of FilterInput WaveformOutput WaveformInput WaveformOutput WaveformInput WaveformOutput Waveforma) Frequency = f 1b) Frequency = f 2c) Frequency = f 3PACKAGE DIMENSIONSDFN12 3.0x1.35, 0.5P CASE 506AD −01ISSUE JNOTES:1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.2.CONTROLLING DIMENSION: MILLIMETER.3.DIMENSION b APPLIES TO PLATEDTERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL.4.COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS.5.EXPOSED PADS CONNECTED TO DIE ED AS TEST CONTACTS.DIM MIN MAX MILLIMETERS A 0.80 1.00A10.000.05A30.20 REF b 0.180.30D 3.00 BSC D2 2.10 2.30E 1.35 BSC E20.200.40e 0.50 BSC K 0.20−−−L 0.200.40*For additional information on our Pb −Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*DETAIL ALL10.000.15ǒmm inchesǓSCALE 16:1ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries,affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.Bluetooth is a registered trademark of Bluetooth SIG.PUBLICATION ORDERING INFORMATION分销商库存信息: ONSEMINUF6402MNT1G。