BCW66G_D87Z中文资料
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©2002 Fairchild Semiconductor CorporationRev. A1, August 2002BCW66G
Absolute Maximum Ratings *
T
C=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:1.These ratings are based on a maximum junction temperature of 150degrees C.2.These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TC=25°C unless otherwise notedSymbolParameterValueUnitsVCEOCollector-Emitter Voltage45V
VCBOCollector-Base Voltage75V
VEBOEmitter-Base Voltage5V
ICCollector Current- Continuous1A
TJ, TSTGOperating and Storage Junction Temperature Range- 55 ~ +150°C
SymbolParameterTest ConditionMin.Typ.Max.UnitsBVCBOCollector-Base Breakdown VoltageIC = 10µA75V
BVCEOCollector-Emitter Breakdown Voltage IC = 10mA45V
BVEBOEmitter-Base Breakdown VoltageIE = 10µA5V
ICESCollector Cut-off CurrentVCB = 45V, IE = 0VCB = 45V, IE = 0TA = 150°C20nA
20µA
IEBOEmitter Cut-off CurrentVEB = 4V20nA
hFEDC Current GainVCE = 10V, IC = 100µAVCE = 1V, IC = 10mAVCE = 1V, IC = 100mAVCE = 2V, IC = 500mA5011016060400
VCE(sat)Collector-Emitter Saturation VoltageIC = 100mA, IB = 10mAIC = 500mA, IB = 50mA0.30.7V
VBE(sat)Base-Emitter Saturation VoltageIC = 500mA, IB = 50mA2V
CoboOutput CapacitanceVCB = 10V, f = 1MHz12pF
CiboInput CapacitanceVEB = 0.5V, f = 1MHz80pF
fTCurrent gain Bandwidth ProductVCE = 10V, IC = 20mA, f = 100MHz100MHz
NFNoise FigureVCE = 5V, IC = 0.2mA, RS = 1kΩ, f = 1KHz, BW = 200Hz10dB
tonTurn-On TimeIB1 = IB2 = 15mAIC = 150mA, RL = 150Ω100ns
toffTurn-Off Time400BCW66G
NPN General Purpose Amplifier
•This device is designed for general purpose amplifier applications at collector currents to 500mA.•Sourced from process 13.
SOT-23
1. Base 2. Emitter 3. Collector 123
Mark: EG元器件交易网www.cecb2b.com©2002 Fairchild Semiconductor CorporationRev. A1, August 2002BCW66GThermal Characteristics
SymbolParameterMin.Typ.Max.UnitsPDTotal Device DissipationDerate above 25°C3502.8mWmW/°C
RθJAThermal Resistance, Junction to Ambient357°C/W元器件交易网www.cecb2b.comPackage DimensionsBCW66G
0.96~1.140.120.03~0.10
0.38 REF
0.40 ±0.03
2.90 ±0.10
0.95 ±0.030.95 ±0.03
1.90 ±0.030.508REF0.97REF1.30 ±0.100.45~0.60
2.40 ±0.10
+0.05–0.0230.20 MIN
0.40 ±0.03SOT-23
Dimensions in Millimeters
©2002 Fairchild Semiconductor CorporationRev. A1, August 2002元器件交易网www.cecb2b.com©2002 Fairchild Semiconductor CorporationRev. I1
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet IdentificationProduct StatusDefinition
Advance InformationFormative or In DesignThis datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.
PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.
No Identification NeededFull ProductionThis datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.
ObsoleteNot In ProductionThis datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.FACT™FACT Quiet series™FAST®
