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MBT5111系列-技术资料

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Approvals
Lloyds Register of Shipping, LR Germanischer Lloyd, GL Bureau Veritas, BV Det Norske Veritas, DNV Nippon Kaiji Kyokai, ClassNK
Approval for the angle version has been applied for.
Accessories
Type Compression fitting Sensor pocket
Process connection G½A ¼”-18NPT G½A M18 × 1.5
Material Brass Brass AISI 316 AISI 316
Insertion length
100 mm 100 mm
G½A or M18×1.5 HEX 27
AISI 316
09 20 100 ¼”-18 NPT 110
IC.PD.P30.C2.02
3
Data sheet
MBT 5111 temperature sensor
IC.PD.P30.C2.02/520B2373
©Danfoss A/S, 10-2005, IC-MC/mr
Code no. 087U8013 087U8014 087U8015 087U8016
INDUSTRIAL CONTROLS
IC.PD.P30.C2.02/520B2373
Data sheet
MBT 5111 temperature sensor
Technical data
Main specifications
Cable Materials
Sensor tolerance EN 60584-2 Class 2
max. deviation
Media temperature NiCr-Ni and Fe-CuNi
2
IC.PD.P30.C2.02
Data sheet
MBT 5111 temperature sensor
MBT 5111 Angle version
Cable length 105 65 40
Brass
Springຫໍສະໝຸດ Steel braided extension cable
175
Compression fitting
Brass
HEX 17/ HEX 27 ¼ NPT or G½A 06 06
Pocket for MBT 5111 Angle
Dimensions
MBT 5111 Straight version
Insertion length 100-150 mm 60
Cable length
Welded Ø12 Protection tube Moveable process connection
Compensation cable
All dimensions are in millimeters
Data sheet
Exhaust gas temperature sensor type MBT 5111
Features • For measuring and regulating exhaust gas in stationary and marine - diesel engines - turbines - compressors • With thermocouple for up to 800°C media temperature • MBT 5111 with adjustable insertion length, up to 150 mm using moveable compression fitting
Cable length 6000 2000 4000 6000
Specification code 010-150-111-0600 0101-0215-000-1-0190-002 0101-0215-000-1-0590-002 0101-0215-000-1-0590-002
Code no. 084Z7278 087U4041 087U4042 087U4043
Ordering Standard programme
• • • • •
Measuring range: Thermocouple: Protection tube: MBT 5111: Tolerance: Design of MBT 5111:
Max. 800°C 1 x NiCr-Ni, type K W. no. 1.4571 (AISI 316 Ti) EN 60584-2 Class 2 Straight or angle
Measuring range Thermocouple design Tolerances −40ºC to 800ºC According to EN 61515 According to IEC 584-2 Class 2
Response times
Type MBT 5111 straight 0 12 MBT 5111 angle 0 6 With pocket Indicative response times. Typical measured values. Water 0.2 m/s T0.5 T0.9 15s 45s 2s 5s 12s 38s
Weight
MBT 5111 straight MBT 5111 angle 1 m cable increases weight with 0.45 kg 0.16 kg approx. 40 g
Mechanical and environmental specifications
Ambient temperature Vibration stability Depending on cable Shock: Vibrations: MBT 5111 straight MBT 5111 angle Protection tube: 100 g in 6 ms 4g sine function 2 - 100 Hz, measured acc. to IEC 68-2-6 2 × 1.5 mm2, armoured silicone (max. 200ºC 2 × 0.5 mm2, armoured teflon (max. 260ºC) W. no. 1.4571 (AISI 316 Ti)
Type
MBT 5111
Design Straight Angle Angle Angle
Diameter 0 12 06 06 06
Insertion length
Adjustable
Process connection G½A compression fitting Accessories Accessories Accessories

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MMBT4401中文资料

MMBT4401中文资料

MMBT4401NPN General Purpose AmplifierFeatures• Surface Mount SOT-23 Package• Capable of 350mWatts of Power DissipationElectrical Characteristics @ 25°C Unless Otherwise SpecifiedSymbolParameterMin MaxUnits OFF CHARACTERISTICSV (BR)CEO Collector-Emitter Breakdown Voltage* (I C =1.0mAdc, I B =0)40 Vdc V (BR)CBO Collector-Base Breakdown Voltage (I C =10mAdc, I E =0)60 Vdc V (BR)EBO Emitter-Base Breakdown Voltage (I E =0.1mAdc, I C =0) 6.0Vdc I BL Base Cutoff Current(V CE =35Vdc, V BE =0.4Vdc)0.1 µAdcI CEXCollector Cutoff Current (V CE =35Vdc, V BE =0.4Vdc)0.1 µAdcON CHARACTERISTICSh FEDC Current Gain*(I C =0.1mAdc, V CE =1.0Vdc) (I C =1.0mAdc, V CE =1.0Vdc) (I C =10mAdc, V CE =1.0Vdc) (I C =150mAdc, V CE =1.0Vdc) (I C =500mAdc, V CE =1.0Vdc)204080100 30040V CE(sat)Collector-Emitter Saturation Voltage (I C =150mAdc, I B =15mAdc) (I C =500mAdc, I B =50mAdc)0.40.75VdcV BE(sat)Base-Emitter Saturation Voltage (I C =150mAdc, I B =15mAdc) (I C =500mAdc, I B =50mAdc)0.750.951.2VdcSMALL-SIGNAL CHARACTERISTICSf T Current Gain-Bandwidth Product(I C =20mAdc, V CE =10Vdc, f=100MHz) 250 MHz C cb Collector-Base Capacitance(V CB =5.0Vdc, I E =0, f=1.0MHz) 6.5 pF C ebEmitter-Base Capacitance(V BE =0.5Vdc, I C =0, f=1.0MHz) 30.0 pFSWITCHING CHARACTERISTICSt d Delay Time (V CC =30Vdc, V BE =0.2Vdc 15ns t r Rise Time I C =150mAdc, I B1=15mAdc)20 ns t s Storage Time (V CC =30Vdc, I C =150mAdc 225 ns t f Fall Time I B1=I B2=15mAdc)30ns*Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%2 XCBEPin ConfigurationTop Viewomp onents 21201 Itasca Street Chatsworth! "# $ % ! "#DC Current Gain vs Collector Current h FEI C (mA)601201802403003601101001000Base-Emitter ON Voltage vs Collector CurrentV BE(ON) - (V)I C - (mA)0.20.40.60.81.01.21101001000Collector-Emitter Saturation Volatge vs Collector Current Base-Emitter Saturation Voltage vs Collector CurrentV CE(SAT) - (V)V BE(SAT) - (V)0.04.08.12.16.20.241.01010010000.50.60.70.80.91.01.11.0101001000I C - (mA)I C - (mA)Collector-Base Diode Reverse Current vs Temperature I CBO - (mA)T J - (°C)0.11.010100255075100125150V CB = 20V I C /I B = 10T A = 25°CI C /I B = 10T A = 25°CV CE = 10VV CE = 10VT A = 25°CT A = 125°C Input Capacitance vs Reverse Bias VoltageVolts - (V)pF08162432400.11.010C ebf = 1MHzMaximum Power Dissipation vs Ambient Temperature P D(MAX) - (mW)T A - (°C)TO-92SOT-23200400600800050100150200Output Capacitance vs Reverse Bias VoltageVolts - (V)pF02468100.11.010Ccbf = 1MHz。

PUMB11中文资料

PUMB11中文资料


Input-off voltage as a function of collector current; typical values.
Fig.6
Input-on voltage as a function of collector current; typical values.
2000 Aug 08
IC (mA)
−102
VCE = −5 V. (1) Tamb = −40 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C.
VCE = −0.3 V. (1) Tamb = −40 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C.
Fig.5
OUTLINE VERSION SOT363
REFERENCES IEC JEDEC EIAJ SC-88
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
2000 Aug 08
6
Philips Semiconductors
Product specification
PNP resistor-equipped double transistor
2000 Aug 08
2
Philips Semiconductors
Product specification
PNP resistor-equipped double transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per transistor VCBO VCEO VEBO VI collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Per device Ptot Note 1. Refer to SC-88 standard mounting conditions. total power dissipation Tamb ≤ 25 °C; note 1 − output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 − − − − − −65 − −65 open emitter open base open collector − − − PARAMETER CONDITIONS MIN.
MMBT5551 G1中文数据手册

MMBT5551 G1中文数据手册


过渡频率
fT
VCE=10V,IC=10mA, f=100MHz
C集电极输出电容
Cob
VCB=10V, IE=0, f=1MHz
*脉冲测试：脉冲宽度≤300μs，占空因素≤2.0％。
1. BASE 2. EMITTER 3. COLLECTOR
Min Typ Max Unit
180
V
160
V
6
V
50
nA
hFE(2) *
VCE=5= V, IC 10mA
hFE(3) *= VCE=5V, IC 50mA
VCE(sat)1* = IC=10mA, IB 1mA
VCE(sat)2* = IC=50mA, IB 5mA
VBE(sat)1* = IC=10mA, IB 1mA
VBE(sat)2* = IC=50mA, IB 5mA
50
nA
80
100
300
50
0.15
V
0.2
V
1
V
1
V
100
300 MHz
6
pF
hFE (2) 的分类
RANK RANGE
L 100-200
H 200-300
C,Mar,2013
典型特性
集电极电流 IC (mA)
Static Characteristic
18
90uA
COMMON
EMITTER
15
80uA
——
200
IC
COMMON EMITTER
100 VCE=5V
Ta=100℃
Ta=25℃
10
100 200
集电极电流 IC (mA)
PMBT5551中文资料

PMBT5551中文资料

SOT23
D
B
E
A
X
3
1
e1
bp
e
2
wM B
HE
vM A
A A1
Q
c Lp detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1 max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1 0.9
0.1
0.48 0.38
0.15 0.09
1999 Apr 15
6
元器件交易网
Philips Semiconductors
NPN high-voltage transistor
NOTES
Product specification
PMBT5551
1999 Apr 15
7
元器件交易网
Philips Semiconductors – a worldwide company
APPLICATIONS • General purpose • Telephony.
PINNING
PIN 1 2 3
base emitter collector
DESCRIPTION
DESCRIPTION
NPN high-voltage transistor in a SOT23 plastic package. PNP complement: PMBT5401.
thermal resistance from junction to ambient