碳化硅MOS特点及应用
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98.5% Inverter Efficiency with SiC-MOSFETsBruno Burger, Benriah Goeldi, Dirk Kranzer, HeribertSchmidtFraunhofer Institute for Solar Energy Systems ISE23rd EU PVSEC, 1st to 4th September 2008,Valencia, SpainContentsLimits of SiliconSiC MOSFETs and JFETsResults for a three-phase inverterResults for a single-phase inverterAvailability and costsSummary23Semiconductor PropertiesSource: www.wikipedia.deSilicon and CarbonCubic and hexagonal structure (4H)bandgap (eV)saturation velocity (*107cm/s)electron mobility (*10³cm²/Vs)thermal conductivity (W/cmK)breakdown field (MV/cm)Silicon (Si)Silicon Carbide (SiC)Source: www.siced.de4SiC DiodesSource: High blocking voltage High switching speedHigh-temperature stabilitySource: www.siced.de Source: Prof. Kolar, ETH Zürich5Improvements of IGBTs are mainly achieved bythickness reduction today: 120 μm limit: 80 μmLimits of thickness reductionSource: Dr. Oscar Apeldoorn, ABB Switzerland: “Medium Voltage Drives from Kilowatt to Megawatt”, PCIM CHINA 2008,Shanghai, China, 18.-20. 03. 2008Specific breakdown voltage [kV]1234567100200300400500600E l e m e n t t h i c k n e s s [μm ]7008002500 V3300 V4500 V6500 V1200 V1700 V0physical limittechnical limitmodern components6Currently obtainable (T-MAX): Si-MOSFET: 560 m Ω SiC-FET: 50 m Ω(6 m Ω)Theoretical Limit (T-MAX): Si-MOSFET: ≈400 m Ω SiC-FET: ≈1 m ΩMinimum obtainable on-state resistance10010-210-110010110-310-410-510-6100010000breakdown voltage / VS i S i CC ool M O S O n -r e s i s t a n c e Ωc m ²Sources: Sima Dimitrijev, Philippe Jamet: Advances in SiC power MOSFET technology; Microelectronics Reliability 43 (2003)225-233Leo Lorenz: Power Semiconductors development trends; IPEMC 20067SiC-MOSFET V (BR)DSS : 1200 V I D :20 / 40 AR DS(on): 100 / 50 m Ω Package: TO 247 Normally offSiC TransistorsSiC-JFETsV (BR)DSS : 1200 V I D :15 / 30 AR DS(on): 125 / 63 m Ω Package : TO 247Normally off8B6-BridgeBipolar switching (+, -) 750 V DC 7 kWSwitching frequency of 16.6 kHz Power semiconductorIGBT 2 (BSM15GD120DN2), IGBT 3 (FS25R12YT3), IGBT 4 (FS25R12W1T4) SiC-MOSFET (CNM 1009)Three-phase PV-InverterS1S3S4S2S5S6C1C2L1L3=or9Three-phase PV-InverterIGBT Module Ferrite inductors Digital control withDSP10Efficiency of the three-phase PV-InverterEta Max [%]Eta Euro [%]SiC-MOSFET IGBT 4IGBT 396.0195.0IGBT 295.4494.997.597.8195.596.54 New IGBT generation every five years In 20 years IGBTs will have the same performance as SiC components available today9091929394959697989910001000200030004000500060007000AC - Power / WE f f i c i e n c y / %SiC MOSFET IGBT 4IGBT 3IGBT 211Financial benefit of PV inverters with SiC transistorsenergy gain per year maximum feed-intariff per kWhBenefit due toefficiency increase per yearBenefit due to efficiency increaseper 10 years Freiburg,Germany 140 kWh 275 kWh 0.45 EUR 250 kWh630 EUR Almeria, Spain 0.44 EUR 63 EUR 121 EUR 1210 EUR Marseille, France137 EUR0.55 EUR1370 EURFor a 7 kW three-phase PV-inverter with ΔEta Euro = 2.0%:Inverter efficiency pays off !!!12H4-Bridge + HERIC-switches Unipolar switching (+, 0 ,-) 350 V DC 5 kWSwitching frequency of 16 kHz Power semiconductorIGBT: FGL40N120ANDSiC Transistors: MOSFET (CNM 1009), JFET (SJEP120R063) SiC Diodes: C2D20120DSingle-phase HERIC ®-InverterS1S3S5S4S2C1L1L2S6D1D2=or or13Single-phase HERIC ®-InverterDiscrete Transistors Ferrite inductorsAnalog control14Efficiency of the single-phase HERIC ®-InverterEfficiency Max Gain SiC JFET + 1.6%+ 1.5%Si IGBT97.2%SiC MOSFET 98.8%98.7% For higher MOSFET tempe-ratures, the efficiencies with MOSFETs and JFETs are equal The measurements include the power consumption of the auxiliaries909192939495969798991000500100015002000AC-Power / WE f f i c i e n c y / %1200V dual JFET @ 350 Vdc 1200V single MOSFET @ 350 Vdc 1200V single IGBT @ 350 Vdc15Temperature dependence of efficiency (HERIC ®-Inverter)The maximum efficiency is not temperature dependentSmaller heat sinksLosses halved Higher heat sink temperatures possible94959697989910020406080100120140Temperature / °CM a x . E f f i c i e n c y / %1200 V single MOSFET @ 350 Vdc 1200 V single IGBT @ 350 Vdc16Voltage dependence of efficiency (HERIC ®-Inverter)SiC transistors show less DC voltage dependence of the maximum efficiencyWide DC voltage ranges are possible949596979899100300400500600700800DC Voltage / VM a x . E f f i c i e n c y / %1200 V dual JFET 1200 V single MOSFET 1200 V single IGBT1790919293949596979899100199019921994199619982000200220042006200820102012yearm a x . e f f i c i e n c y / %Improvement of the max. inverter efficiencySiliconSilicon Carbide18Quantum leaps in power electronics semiconductorsSilicon bipolar transistorSilicon carbide transistorThree electrode vacuum tubeSilicon IGBTImportant statementsAvailabilityAvailability will not be an issue at allThe SiC substrate market has multiple suppliersCostsCosts depend on the quantity and timingAn economically viable cost can be achieved with increasing volumesWe are able to reach cost parity with Si for comparable volume levels19SummaryLower on-resistance and forward lossesLower switching lossesSimplified cooling with smaller, lighter heat sinksEfficiencies of 98% possible with conventional topologiesEfficiencies of 98.8% possible with HERIC, H5 or three-level topologiesSmaller inductor volume possible due to higher switching frequenciesHigh-efficient, compact, light and cheap PV inverters with SiC transistors2021Project ”Ultra Compact PV Inverter with Silicon Carbide Semiconductors and High Efficiency”Funded by:AcknowledgementsProject: …Ultra kompakter PV-Wechselrichter mit Siliziumcarbid-Halbleitern und hohem Wirkungsgrad“Funding reference: 0325068Project duration: 01.08.2008 –31.07.201022Thank you for your attention!bruno.burger@ise.fraunhofer.de dirk.kranzer@ise.fraunhofer.dewww.ise.fraunhofer.de S o u r c e : w w w .s i c e d .d e S o u r c e : w w w .c r e e .c o m。
