MPSA75RLRAG中文资料
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© Semiconductor Components Industries, LLC, 2006January, 2006 − Rev. 41Publication Order Number:
MPSA75/D
MPSA75, MPSA77Darlington TransistorsPNP Silicon
Features•Pb−Free Packages are Available*
MAXIMUM RATINGSRatingSymbolValueUnitCollector−Emitter VoltageMPSA75MPSA77VCES−40−60Vdc
Emitter−Base VoltageVEBO−10VdcCollector Current − ContinuousIC−500mAdcTotal Device Dissipation @ TA = 25°CDerate above 25°CPD6255.0mWmW/°C
Operating and Storage JunctionTemperature RangeTJ, Tstg−55 to +150°C
THERMAL CHARACTERISTICSCharacteristicSymbolMaxUnitThermal Resistance, Junction−to−AmbientRqJA200°C/WMaximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (notnormal operating conditions) and are not valid simultaneously. If these limits areexceeded, device functional operation is not implied, damage may occur andreliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, pleasedownload the ON Semiconductor Soldering and Mounting TechniquesReference Manual, SOLDERRM/D.
http://onsemi.comMPSA77TO−925,000 Units/BoxMPSA77GTO−92(Pb−Free)5,000 Units/Box
MPSA75RLRPTO−922,000/Ammo PackMPSA75RLRPGTO−92(Pb−Free)2,000/Ammo Pack
DevicePackageShipping†MPSA75RLRATO−922,000/Tape & ReelMPSA75RLRAGTO−92(Pb−Free)2,000/Tape & Reel
MPSA77RLRATO−922,000/Ammo PackMPSA77RLRAGTO−92(Pb−Free)2,000/Ammo Pack
ORDERING INFORMATION
†For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationBrochure, BRD8011/D.
COLLECTOR 3BASE2
EMITTER 1
MPSAxx=Device Codexx = 75 or 77A=Assembly LocationY=YearWW=Work WeekG=Pb−Free Package(Note: Microdot may be in either location)
TO−92CASE 29−11STYLE 1123
MARKINGDIAGRAM
MPSAxxAYWWGG
元器件交易网www.cecb2b.comMPSA75, MPSA77
http://onsemi.com2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
CharacteristicSymbolMinTypMaxUnitOFF CHARACTERISTICSCollector−Emitter Breakdown VoltageMPSA75(IC = −100mAdc, VBE = 0)MPSA77
V(BR)CES−40−60−−−−Vdc
Collector−Base Breakdown VoltageMPSA75(IC = 100 mAdc, IE = 0)MPSA77V(BR)CBO−40−60−−−−VdcCollector Cutoff Current(VCB= −30 V, IE = 0)MPSA75(VCB = −50 V, IE = 0)MPSA77ICBO−−−−−100−100nAdc
Collector Cutoff Current(VCE = −30 V, VBE = 0)MPSA75(VCE = −50 V, VBE = 0)MPSA77ICES−−−−−500−500nAdcEmitter Cutoff Current(VEB = −10 Vdc)IEBO−−−100nAdcON CHARACTERISTICSDC Current Gain(IC = −10 mA, VCE = −5.0 V)(IC = −100 mA, VCE = −5.0 V)
hFE10,00010,000−−−−−
Collector−Emitter Saturation Voltage(IC = −100 mA, IB = −0.1 mAdc)VCE(sat)−−−1.5VdcBase−Emitter On Voltage(IC = −100 mA, VCE = −5.0 Vdc)VBE−−−2.0VdcSMALL−SIGNAL CHARACTERISTICSCurrent−Gain − High Frequency(IC = −10 mA, VCE = −5.0 V, f = 100 MHz)|hfe|1.252.4−−
元器件交易网www.cecb2b.comMPSA75, MPSA77
http://onsemi.com3
Figure 1. DC Current GainIC, COLLECTOR CURRENT (mA)200−1.02.0hFE, DC CURRENT GAIN (X1.0 K)TA = 125°C
25°C
−55°CVCE = −2.0 V
−2.0−3.0−5.0−7.0−10−20−30−50−100−30010070503020107.05.03.0−0.3−0.5−0.7−70−200−5.0 V
−10 V
IC, COLLECTOR CURRENT (mA)Figure 2. “On” Voltage
V, VOLTAGE (VOLTS)−2.00−0.3TA = 25°CVBE(on) @ VCE = −5.0 V−1.6−1.2−0.8−0.4VCE(sat) @ IC/IB = 1000IC/IB = 100−0.5−1.0−2−3−5−10−20−30−50−100−200−300IB, BASE CURRENT (mA)Figure 3. Collector Saturation RegionVCE, COLLECTOR−EMITTER VOLTAGE (VOLTS−2.0−0.6TA = 25°CIC =−1.8−1.6−1.4−1.2−1.0−0.8−0.1−0.2−1−2−5−10−20−50−100−200−500−0.5−1K−2K−10K−10 mA−50 mA−100 mA−175 mA−300 mA104.03.02.00.1Figure 4. High Frequency Current GainIC, COLLECTOR CURRENT (mA)VCE = −5.0 Vf = 100 MHzTA = 25°C|hFE|, HIGH FREQUENCY CURRENT GAIN1.00.40.2−1.0−2.0−5.0−10−20−50−100−200−500−1KVCE, COLLECTOR VOLTAGE (VOLTS)−6.0IC, COLLECTOR CURRENT (mA)−10−20Figure 5. Active Region, Safe Operating AreaCURRENT LIMITTHERMAL LIMITSECOND BREAKDOWN LIMIT−300−200−100−50−20−10−40−60100 ms1.0 msTA = 25°C−1000(DUTY CYCLE ≤ 10%)1.0 sTC = 25°CMPSA75−1.0−2.0−4.0MPSA77VBE(sat) @ IC/IB = 100−5K
元器件交易网www.cecb2b.com
