MPSA75中文资料
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元器件交易网 MPSA75 MPSA77
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元器件交易网 MPSA75 MPSA77
200 hFE , DC CURRENT GAIN (X1.0 K) 100 70 50 30 20 10 7.0 5.0 3.0 2.0 –0.3 –10 V 25°C VCE = –2.0 V –5.0 V TA = 125°C
X X G H V
1
J
C N N
SECTION X–X
DIM A B C D F G H J K L N P R V
CASE 029–04 (TO–226AA) ISSUE AD
STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 2. “On” Voltage
Figure 3. Collector Saturation Region
10 |h FE |, HIGH FREQUENCY CURRENT GAIN VCE = –5.0 V f = 100 MHz TA = 25°C
–1000 IC, COLLECTOR CURRENT (mA) 1.0 ms –300 –200 –100 –50 –20 –10 –1.0 TA = 25°C TC = 25°C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (DUTY CYCLE ≤ 10%) MPSA75 MPSA77 –2.0 –4.0 –6.0 –10 –20 –40 –60 VCE, COLLECTOR VOLTAGE (VOLTS) 1.0 s 100 µs
–1.2 VBE(on) @ VCE = –5.0 V –0.8 VCE(sat) @ IC/IB = 1000 IC/IB = 100 –0.4
0 –0.3 –0.5
–1.0
–2 –3 –5 –10 –20 –30 –50 IC, COLLECTOR CURRENT (mA)
–100 –200 –300
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — High Frequency (IC = –10 mA, VCE = –5.0 V, f = 100 MHz) |hfe| 1.25 2.4 — —
Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996
元器件交易网
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPSA75/D
Darlington Transistors
PNP Silicon
COLLECTOR 3 BASE 2
MPSA75 MPSA77
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
元器件交易网
PACKAGE DIMENSIONS
MPSA75 MPSA77
A R P
SEATING PLANE
B
F
L K D
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 –––
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
–2.0 TA = 25°C –1.8 –1.6 –1.4 –1.2 –1.0 –0.8 –0.6 –0.1–0.2 –0.5 –1 –2 –5 –10 –20 –50 –100–200–500 –1K–2K –5K–10K IB, BASE CURRENT (µA) IC = –10 mA –50 mA –100 mA –175 mA –300 mA
4.0 3.0 2.0 1.0 0.4 0.2
0.1 –1.0 –2.0
–5.0
–10
–20
–50
–100 –200
–500
–1K
IC, COLLECTOR CURRENT (mA)
Figure 4. High Frequency Current Gain
Figure 5. Active Region, Safe Operating Area
EMITTER 1
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCES VEBO IC PD TJ, Tstg MPSA75 –40 –10 –500 625 5.0 – 55 to +150 MPSA77 –60 Unit Vdc Vdc Adc mW mW/°C °C