© 1996 IXYS All rights reservedSymbol Test Conditions Maximum RatingsV CES T J = 25°C to 150°C1000V V CGR T J = 25°C to 150°C; R GE = 1 M Ω1000V V GES Continuous ±20V V GEM Transient ±30V I C25T C = 25°C 50A I C90T C = 90°C 25A I CMT C = 25°C, 1 ms100A SSOA V GE = 15 V, T VJ = 125°C, R G = 33 Ω I CM = 50A (RBSOA)Clamped inductive load, L = 100 µH @ 0.8 V CESP C T C = 25°C200W T J -55 ... +150°C T JM 150°C T stg -55 ... +150°CM d Mounting torque (M3) 1.13/10Nm/lb.in.WeightTO-204 = 18 g, TO-247 = 6 gMaximum lead temperature for soldering 300°C1.6 mm (0.062 in.) from case for 10 sSymbol Test ConditionsCharacteristic Values(T J = 25°C, unless otherwise specified)min.typ.max.BV CES I C = 3 mA, VGE = 0 V 1000V V GE(th)I C= 250 µA, V CE = V GE2.55V I CES V CE = 0.8 • V CES T J = 25°C 250µA V GE = 0 VT J = 125°C1mA I GES V CE = 0 V, V GE = ±20 V ±100nA V CE(sat)I C= I C90, V GE = 15 V25N100 3.5V 25N100A4.0VTO-247 AD (IXGH)GCETO-204 AE (IXGM)CG = Gate, C = Collector,E = Emitter,TAB = CollectorV CESI C25V CE(sat)Low V CE(sat)IXGH/IXGM 25 N1001000 V 50 A 3.5 V High speed IGBTIXGH/IXGM 25 N100A 1000 V50 A4.0 VFeaturesl International standard packages l 2nd generation HDMOS TM process l Low V CE(sat)-for low on-state conduction losses l High current handling capability l MOS Gate turn-on -drive simplicitylVoltage rating guaranteed at high temperature (125°C)Applicationsl AC motor speed control l DC servo and robot drives l DC choppersl Uninterruptible power supplies (UPS)lSwitch-mode and resonant-mode power suppliesAdvantageslEasy to mount with 1 screw (TO-247)(isolated mounting screw hole)lHigh power density91516E (3/96)查询IXGH25N100供应商IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:4,835,5924,881,1065,017,5085,049,9615,187,1175,486,7154,850,0724,931,8445,034,7965,063,3075,237,4815,381,025IXYS reserves the right to change limits, test conditions, and dimensions.SymbolTest ConditionsCharacteristic Values(TJ = 25°C, unless otherwise specified)min.typ.max.g fs I C = I C90; V CE = 10 V,815S Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %C ies 2750pF C oes V CE = 25 V, V GE = 0 V, f = 1 MHz200pF C res 50pF Q g 130180nC Q ge I C = I C90, V GE = 15 V, V CE = 0.5 V CES2560nC Q gc 5590nC t d(on)100ns t ri 200ns t d(off)500ns t fi 25N100A500ns E off 25N100A 5mJ t d(on)100ns t ri 250ns E on 3.5mJ t d(off)7201000ns t fi 25N1009503000ns 25N100A 8001500ns E off 25N10010mJ 25N100A8mJ R thJC 0.62K/WR thCK0.25K/WInductive load, T J = 25°CI C = I C90, V GE = 15 V, L = 300 µH,V CE = 0.8 V CES , R G = R off = 33 ΩRemarks: Switching times may increasefor V CE (Clamp) > 0.8 • V CES ,higher T J or increased R G Inductive load, T J = 125°C I C = I C90, V GE = 15 V, L = 300 µH V CE = 0.8 V CES , R G = R off = 33 ΩRemarks: Switching timesmay increasefor V CE (Clamp) > 0.8 • V CES ,higher T J or increased R GFig. 1Saturation CharacteristicsFig.7Gate ChargeIXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:4,835,5924,881,1065,017,5085,049,9615,187,1175,486,7154,850,0724,931,8445,034,7965,063,3075,237,4815,381,025。