【WO2019207281A1】用于操作存储器位单元的方法、系统和设备【专利】
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(51)InternationalPatentClassification:KR,KW,KZ,LA,LC,LK,LR,LS,LU,LY,MA,MD,ME,
G11C13/00(2006.01)G11C11/56(2006.01)MG,MK,MN,MW,MX,MY,MZ,NA,NG,NI,NO,NZ,
G11C11/16(2006.01)G11C16/28(2006.01)OM,PA,PE,PG,PH,PL,PT,QA,RO,RS,RU,RW,SA,
G11C7/06(2006.01)SC,SD,SE,SG,SK,SL,SM,ST,SV,SY,TH,TJ,TM,TN,
TR,TT,TZ,UA,UG,US,UZ,VC,VN,ZA,ZM,ZW.(21)InternationalApplicationNumber:
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kindofregionalprotectionavailable).ARIPO(BW,GH,(22)InternationalFilingDate:GM,KE,LR,LS,MW,MZ,NA,RW,SD,SL,ST,SZ,TZ,22March2019(22.03.2019)UG,ZM,ZW),Eurasian(AM,AZ,BY,KG,KZ,RU,TJ,
(25)FilingLanguage:EnglishTM),European(AL,AT,BE,BG,CH,CY,CZ,DE,DK,
EE,ES,FI,FR,GB,GR,HR,HU,IE,IS,IT,LT,LU,LV,(26)PublicationLanguage:EnglishMC,MK,MT,NL,NO,PL,PT,RO,RS,SE,SI,SK,SM,
(30)PriorityData:TR),OAPI(BF,BJ,CF,CG,Cl,CM,GA,GN,GQ,GW,
15/960,27723April2018(23.04.2018)USKM,ML,MR,NE,SN,TD,TG).
(71)Applicant:ARMLTD[GB/GB];110FulbournRoad,Published:CambridgeCB19NJ(GB).—withinternationalsearchreport(Art.21(3))
(72)Inventors:DAS,Shidhartha;110FulbournRoad,Cam¬bridgeCB19NJ(GB).ROSENDALE,GlenArnold;110FulbournRoad,CambridgeCB19NJ(GB).
(74)Agent:TLIPLTD;14KingStreet,LeedsYorkshireLSI
2HL(GB).
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DZ,EC,EE,EG,ES,FI,GB,GD,GE,GH,GM,GT,HN,
HR,HU,ID,IL,IN,IR,IS,JO,JP,KE,KG,KH,KN,KP,
(54)Title:METHOD,SYSTEMANDDEVICEFOROPERATIONOFMEMORYBITCELLS
(57)Abstract:Disclosedaremethods,systemsanddevicesforop¬erationofmemorydevice.Abitcellmayrepresentabinaryvalue,
symbol,parameterorconditionbasedoncomplementaryimped¬
nd
nd
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FIG.1A
METHOD,SYSTEMANDDEVICEFOROPERATIONOFMEMORYBITCELLS
[01]Disclosedaretechniquesforutilizingmemorydevices.
[02]Non-volatilememoriesareaclassofmemoryinwhichthememorycellor
elementdoesnotloseitsstateafterpowersuppliedtothedeviceisremoved.The
earliestcomputermemories,madewithringsofferritethatcouldbemagnetizedin
twodirections,werenon-volatile,forexample.Assemiconductortechnology
evolvedintohigherlevelsofminiaturization,theferritedeviceswereabandonedfor
themorecommonlyknownvolatilememories,suchasDRAMs(DynamicRandom
AccessMemories)andSRAMs(Static-RAMs).
[03]Onetypeofnon-volatilememory,electricallyerasableprogrammable
read-onlymemory(EEPROM)deviceshavelargecellareasandmayrequirea
largevoltage(e.g.,from12.0to21.0volts)onatransistorgatetowriteorerase.
Also,aneraseorwritetimeistypicallyoftheorderoftensofmicroseconds.One
limitingfactorwithEEPROMsisthelimitednumberoferase/writecyclestonomore
thanslightlyover600,000-oroftheorderof105-106.Thesemiconductorindustry
haseliminatedaneedofapass-gateswitchtransistorbetweenEEPROMsand
non-volatiletransistorsbysectorizingamemoryarrayinsuchawaythat"pages"
(e.g.,sub-arrays)maybeerasedatatimeinEEPROMscalledflashmemory
devices.Inflashmemorydevices,anabilitytokeeprandomaccess(erase/write
singlebits)wassacrificedforspeedandhigherbitdensity.
[04]Morerecently,FeRAMs(FerroelectricRAMs)haveprovidedlowpower,
relativelyhighwrite/readspeed,andenduranceforread/writecyclesexceeding10
billiontimes.Similarly,magneticmemories(MRAMs)haveprovidedhigh
write/readspeedandendurance,butwithahighcostpremiumandhigherpower
consumption.Neitherofthesetechnologiesreachesthedensityofflashmemory
devices,forexample.Assuch,flashremainsanon-volatilememoryofchoice.
Nevertheless,itisgenerallyrecognizedthatflashmemorytechnologymaynot
scaleeasilybelow65nanometers(nm);thus,newnon-volatilememorydevices
capableofbeingscaledtosmallersizesareactivelybeingsought.
[05]Technologiesconsideredforthereplacementofflashmemorydevices
haveincludedmemoriesbasedoncertainmaterialsthatexhibitaresistance
changeassociatedwithachangeofphaseofthematerial(determined,atleastin
