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2N5551L-X-T92-K中文资料

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UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR

www.unisonic.com.tw

1 of 4 Copyright © 2005 Unisonic Technologies Co., Ltd QW-R201-002.B HIGH VOLTAGE SWITCHING TRANSISTOR 󰂄 FEATURES * High collector-emitter voltage: VCEO=160V * High current gain 󰂄 APPLICATIONS * Telephone switching circuit * Amplifier TO-9211SOT-89*Pb-free plating product number: 2N5551L󰂄 ORDERING INFORMATION Order Number Pin AssignmentNormal Lead Free Plating Package 1 2 3 Packing 2N5551-x-AB3-R 2N5551L-x-AB3-R SOT-89 BCE Tape Reel 2N5551-x-T92-B 2N5551L-x-T92-B TO-92 EBCTape Box 2N5551-x-T92-K 2N5551L-x-T92-K TO-92 EBCBulk 2N5551L-x-AB3-R(1)Packing Type(2)Package Type(4)Lead Plating(1) B: Tape Box, K: Bulk, R: Tape Reel(2) T92: TO-92, AB3: SOT-89(4) L: Lead Free Plating, Blank: Pb/Sn(3)Rank(3) x: refer to Classification of hFE 元器件交易网www.cecb2b.com2N5551 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 4 www.unisonic.com.tw QW-R201-002.B 󰂄 ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOLRATINGS UNIT Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Collector Dissipation TO-92 625 mW Collector Dissipation SOT-89PC 500 mW Collector Current IC 600 mA Junction Temperature TJ +150 󰄊 Storage Temperature TSTG -55 ~ +150 󰄊 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 󰂄 ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOLTEST CONDITIONS MIN TYP MAX UNITCollector-Base Breakdown Voltage BVCBO IC=100µA, IE=0 180 V Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 160 V Emitter-Base Breakdown Voltage BVEBO IE=10µA, IC=0 6 V Collector Cut-off Current ICBO VCB=120V, IE=0 50 nAEmitter Cut-off Current IEBO VBE=4V,IC=0 50 nADC Current Gain(Note) hFE1 hFE2 hFE3 VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA 80 80 80 160 400 Collector-Emitter Saturation Voltage VCE(SAT)IC=10mA, IB=1mA IC=50mA, IB=5mA 0.15 0.2 V Base-Emitter Saturation Voltage VBE(SAT)IC=10mA, IB=1mA IC=50mA, IB=5mA 1 1 V Current Gain Bandwidth Product fT VCE=10V, IC=10mA, f=100MHz100 300 MHzOutput Capacitance Cob VCB=10V, IE=0 f=1MHz 6.0 pFNoise Figure NF IC=0.25mA, VCE=5V RS=1kΩ, f=10Hz ~ 15.7kHz 8 dBNote: Pulse test: PW<300µs, Duty cycle<2% 󰂄 CLASSIFICATION OF hFE RANK A B C RANGE 80-170 150-240 200-400 元器件交易网www.cecb2b.com2N5551 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 3 of 4 www.unisonic.com.tw QW-R201-002.B 󰂄 TYPICAL CHARACTERISTICS DC Current GainCollector Current, IC(mA)DC Current Gain, hFEVCE=5VCollector Output Capacitance Collector-Base Voltage (V)Capacitance, Cob(pF)0246810f=1MHzIE=010010110210-1100101102103100101102103 Base-Emitter on VoltageCollector Current, IC (mA)Base-Emitter Voltage (V)00.20.40.60.81.0VCE=5VCollector Current, IC (mA)Saturation Voltage (V)Saturation VoltageIC=10*IB10310210110010-210-110010110-1100101102103VCE(SAT)VBE(SAT) Current Gain-Bandwidth ProductCollector Current, IC(mA)Current Gain-Bandwidth Product,fT(MHz)VCE=10V100101102103100101102103 元器件交易网www.cecb2b.com2N5551 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 4 of 4 www.unisonic.com.tw QW-R201-002.B UTC assumes no responsibility for equipment failures that result from using products at values thatexceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, orother parameters) listed in products specifications of any and all UTC products described or containedherein. UTC products are not designed for use in life support appliances, devices or systems wheremalfunction of these products can be reasonably expected to result in personal injury. Reproduction inwhole or in part is prohibited without the prior written consent of the copyright owner. The informationpresented in this document does not form part of any quotation or contract, is believed to be accurateand reliable and may be changed without notice. 元器件交易网www.cecb2b.com

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2N5151-220M中文资料

2N5151-220M中文资料

2N5151-220M2N5153-220M

Document Number 3630Issue 1Semelab plc.Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.E-mail: sales@Website: Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believedto be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.Semelab encourages customers to verify that datasheets are current before placing orders.DESCRIPTIONThe 2N5151-220M and the 2N5153-220M aresilicon expitaxial planar PNP transistors inTO-220 (JEDEC TO-257AB) metal caseintended for use in switching applications.The complementary NPN types are the2N5152-220M and 2N5154-220M respectively

2N6661JANTX中文资料

2N6661JANTX中文资料

2N6661JAN/JANTX/JANTXVVishay Siliconix

Document Number: 70225S-04279—Rev. B, 11-1JAN Qualified N-Channel 90-V (D-S) MOSFETsPRODUCT SUMMARYV(BR)DSS Min (V)rDS(on) Max (W)VGS(th) (V)ID (A)904 @ VGS = 10 V0.8 to 20.86

FEATURESBENEFITSAPPLICATIONSDMilitary QualifiedDLow On-Resistance: 3.6 WDLow Threshold: 1.6 VDLow Input Capacitance: 35 pFDFast Switching Speed: 6 nsDLow Input and Output LeakageDGuaranteed ReliabilityDLow Offset VoltageDLow-Voltage OperationDEasily Driven Without BufferDHigh-Speed CircuitsDLow Error VoltageDMilitary ApplicationsDDirect Logic-Level Interface: TTL/CMOSDDrivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, etc.DBattery Operated SystemsDSolid-State Relays

1

23TO-205AD(TO-39)

Top ViewDGSDevice MarkingSide View JAN2N6661*“S” fllxxyy“S” = Siliconix Logof = Factory Codell = Lot Traceabilityxxyy = Date Code*Note: orJANTX2N6661JANTXV2N6661ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)ParameterSymbolLimitUnitDrain-Source VoltageVDS90Gate-Source VoltageVGS"20VTC = 25_C0.86Continuous Drain Current (TJ = 150_C)TC = 100_CID0.54APulsed Drain CurrentaIDM3TC = 25_C6.25Power DissipationTA = 25_CPD0.725WThermal Resistance, Junction-to-AmbientbRthJA170Thermal Resistance, Junction-to-CaseRthJC20_C/WOperating Junction and Storage Temperature RangeTJ, Tstg–55 to 150_CNotesa.Pulse width limited by maximum junction temperature.b.Not required by Military Spec.元器件交易网2N6661JAN/JANTX/JANTXVVishay Siliconix

2N5151S资料

2N5151S资料

2N5151S

Bipolar PNP Device. VCEO = 80V IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications

Parameter Test Conditions Min. Typ. Max. UnitsVCEO* 80 V IC(CONT) 5 A hFE @ 5/2.5 (VCE / IC) 30 90 - ft 60M Hz PD 10 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@.Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Generated1-Aug-02Bipolar PNP Device in a Hermetically sealed TO39 Metal Package.

2N5014中文资料

2N5014中文资料

ParameterTest ConditionsMin.Typ.Max.Unit

Prelim. 8/962N5014

Semelab plc.Telephone +44(0)1455 556565. Fax +44(0)1455 552612.E-mail: sales@Website: SILICON EPITAXIALNPN TRANSISTOR

FEATURESGeneral purpose power transistor for switch-ing and linear applications in a hermeticTO–39 package.

VCBOCollector – Base VoltageVCERCollector – Emitter VoltageR = 10WVEBOEmitter – Base Reverse VoltageICContinuous Collector CurrentPTOTTotal Device DissipationTC= 25°CTJMaximum Operating Junction TemperatureTSTGand Storage Temperature Range900V900V5V2W3.5A200°C-55 to 200°CMECHANICAL DATADimensions in mm (inches)

TO–39 PACKAGEABSOLUTE MAXIMUM RATINGS (TA= 25°C unlessotherwise stated)PIN 1 – EmitterPIN 2 – BasePIN 3 – Collector

ELECTRICAL CHARACTERISTICS(TC= 25°C unless otherwise stated)ICBOCollector Base Leakage CurrenthFED.C Current GainfaeVCB = 900VVCE= 10VIC=0.02A0.0122018020mA—MHz元器件交易网