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STP5NB90中文资料

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STP5NB90STP5NB90FPN-CHANNEL900V-2.3Ω -5A-TO-220/TO-220FPPowerMESH™MOSFETPRELIMINARYDATAsTYPICALRDS(on)=2.3ΩsEXTREMELYHIGHdv/dtCAPABILITYs100%AVALANCHETESTEDsVERYLOWINTRINSICCAPACITANCESsGATECHARGEMINIMIZEDDESCRIPTIONUsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)perarea,exceptionalavalancheanddv/dtcapabilitiesandunrivalledgatechargeandswitchingcharacteristics.APPLICATIONSsHIGHCURRENT,HIGHSPEEDSWITCHINGsUNINTERRUPTIBLEPOWERSUPPLY(UPS)sDC-DC&DC-ACCONVERTERSFORTELECOM,INDUSTRIALANDCONSUMERENVIRONMENTINTERNALSCHEMATICDIAGRAM

September1998TO-220TO-220FP123123

ABSOLUTEMAXIMUMRATINGSSymbolParameterValueUnitSTP5NB90STP5NB90FPVDSDrain-sourceVoltage(VGS=0)900VVDGRDrain-gateVoltage(RGS=20kΩ)900VVGSGate-sourceVoltage±30VIDDrainCurrent(continuous)atTc=25oC55(*)AIDDrainCurrent(continuous)atTc=100oC3.13.1(*)AIDM(•)DrainCurrent(pulsed)2020APtotTotalDissipationatTc=25oC12540WDeratingFactor1.00.32W/oCdv/dt(1)PeakDiodeRecoveryvoltageslope4.54.5V/nsVISOInsulationWithstandVoltage(DC)2000VTstgStorageTemperature-65to150oCTjMax.OperatingJunctionTemperature150oC(•)Pulsewidthlimitedbysafeoperatingarea(1)ISD≤5 Α,di/dt ≤200A/µs,VDD≤V(BR)DSS,Tj≤TJMAX(*)LimitedonlybymaximumtemperatureallowedTYPEVDSSRDS(on)IDSTP5NB90STP5NB90FP900V900V<2.5Ω<2.5Ω5A5A

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THERMALDATATO-220TO220-FPRthj-caseThermalResistanceJunction-caseMax13.13oC/WRthj-ambRthc-sinkTlThermalResistanceJunction-ambientMaxThermalResistanceCase-sinkTypMaximumLeadTemperatureForSolderingPurpose62.50.5300oC/WoC/WoCAVALANCHECHARACTERISTICSSymbolParameterMaxValueUnitIARAvalancheCurrent,RepetitiveorNot-Repetitive5AEASSinglePulseAvalancheEnergy(startingTj=25oC,ID=IAR,VDD=50V)318mJELECTRICALCHARACTERISTICS(Tcase=25oCunlessotherwisespecified)OFFSymbolParameterTestConditionsMin.Typ.Max.UnitV(BR)DSSDrain-sourceBreakdownVoltageID=250µAVGS=0900VIDSSZeroGateVoltageDrainCurrent(VGS=0)VDS=MaxRatingVDS=MaxRatingTc=125oC150µAµAIGSSGate-bodyLeakageCurrent(VDS=0)VGS=± 30V±100nAON(∗)SymbolParameterTestConditionsMin.Typ.Max.UnitVGS(th)GateThresholdVoltageVDS=VGSID=250µA345VRDS(on)StaticDrain-sourceOnResistanceVGS=10VID=2.5A2.32.5ΩID(on)OnStateDrainCurrentVDS>ID(on)xRDS(on)maxVGS=10V5ADYNAMICSymbolParameterTestConditionsMin.Typ.Max.Unitgfs(∗)ForwardTransconductanceVDS>ID(on)xRDS(on)maxID=2.5A2.54.1SCissCossCrssInputCapacitanceOutputCapacitanceReverseTransferCapacitanceVDS=25Vf=1MHzVGS=0125012813162517020pFpFpFSTP5NB90/FP

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ELECTRICALCHARACTERISTICS(continued)SWITCHINGONSymbolParameterTestConditionsMin.Typ.Max.Unittd(on)trTurn-onTimeRiseTimeVDD=450VID=2.5ARG=4.7 ΩVGS=10V1892613nsnsQgQgsQgdTotalGateChargeGate-SourceChargeGate-DrainChargeVDD=720VID=5AVGS=10V33101347nCnCnCSWITCHINGOFFSymbolParameterTestConditionsMin.Typ.Max.Unittr(Voff)tftcOff-voltageRiseTimeFallTimeCross-overTimeVDD=720VID=5ARG=4.7 ΩVGS=10V131017181424nsnsnsSOURCEDRAINDIODESymbolParameterTestConditionsMin.Typ.Max.UnitISDISDM(•)Source-drainCurrentSource-drainCurrent(pulsed)520AAVSD(∗)ForwardOnVoltageISD=5AVGS=01.6VtrrQrrIRRMReverseRecoveryTimeReverseRecoveryChargeReverseRecoveryCurrentISD=5Adi/dt=100A/µsVDD=100VTj=150oC7005.416nsµCA(∗)Pulsed:Pulseduration=300µs,dutycycle1.5%(•)PulsewidthlimitedbysafeoperatingareaSTP5NB90/FP

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DIM.mminchMIN.TYP.MAX.MIN.TYP.MAX.A4.404.600.1730.181C1.231.320.0480.051D2.402.720.0940.107D11.270.050E0.490.700.0190.027F0.610.880.0240.034F11.141.700.0440.067F21.141.700.0440.067G4.955.150.1940.203G12.42.70.0940.106H210.010.400.3930.409L216.40.645L413.014.00.5110.551L52.652.950.1040.116L615.2515.750.6000.620L76.26.60.2440.260L93.53.930.1370.154DIA.3.753.850.1470.151

L6ACDED1

FG

L7L2

Dia.F1

L5L4H2

L9F2G1TO-220MECHANICALDATA

P011CSTP5NB90/FP

4/6元器件交易网www.cecb2b.com

DIM.mminchMIN.TYP.MAX.MIN.TYP.MAX.A4.44.60.1730.181B2.52.70.0980.106D2.52.750.0980.108E0.450.70.0170.027F0.7510.0300.039F11.151.70.0450.067F21.151.70.0450.067G4.955.20.1950.204G12.42.70.0940.106H1010.40.3930.409L2160.630L328.630.61.1261.204L49.810.60.3850.417L615.916.40.6260.645L799.30.3540.366Ø33.20.1180.126

L2ABDE

HGL6¯FL3

G1

123F2F1L7

L4TO-220FPMECHANICALDATASTP5NB90/FP

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Informationfurnishedisbelievedtobeaccurateandreliable.However,STMicroelectronicsassumesnoresponsibilityfortheconsequencesofuseofsuchinformationnorforanyinfringementofpatentsorotherrightsofthirdpartieswhichmayresultfromitsuse.NolicenseisgrantedbyimplicationorotherwiseunderanypatentorpatentrightsofSTMicroelectronics.Specificationmentionedinthispublicationaresubjecttochangewithoutnotice.Thispublicationsupersedesandreplacesallinformationpreviouslysupplied.STMicroelectronicsproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithoutexpresswrittenapprovalofSTMicroelectronics.TheSTlogoisaregisteredtrademarkofSTMicroelectronics©1998STMicroelectronics–PrintedinItaly–AllRightsReservedSTMicroelectronicsGROUPOFCOMPANIESAustralia-Brazil-Canada-China-France-Germany-Italy-Japan-Korea-Malaysia-Malta-Mexico-Morocco-TheNetherlands-Singapore-Spain-Sweden-Switzerland-Taiwan-Thailand-UnitedKingdom-U.S.A..STP5NB90/FP

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9N90中文资料

9N90中文资料

UNISONIC TECHNOLOGIES CO., LTD 9N90

Power MOSFET

1 of 8

Copyright © 2008 Unisonic Technologies Co., LTD

QW-R502-217.A 900V N-CHANNEL MOSFET

󰂄 DESCRIPTION

The UTC 9N90 uses UTC’s advanced proprietary, planar

stripe, DMOS technology to provide excellent R

DS(ON), low gate

charge and operation with low gate voltages. This device is

suitable for use as a load switch or in PWM applications.

󰂄 FEATURES

* R

DS(ON) = 1.4Ω @V

GS = 10 V

* Ultra low gate charge ( typical 45 nC )

* Low reverse transfer capacitance ( C

RSS = typical 14 pF )

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

󰂄 SYMBOL

1.Gate

3.Source2.Drain

TO-3P1

*Pb-free plating product number: 9N90L

󰂄 ORDERING INFORMATION

Ordering Number Pin Assignment

Normal Lead Free Plating Package

WFW9N90中文资料

WFW9N90中文资料

●●●▲{{{◀

Absolute Maximum Ratings

Symbol

ParameterValueUnitsVDSSDrain to Source Voltage900VIDContinuous Drain Current(@TC = 25°C)9.0AContinuous Drain Current(@TC = 100°C)5.7AIDMDrain Current Pulsed (Note 1)36.0AVGSGate to Source Voltage ±30VEASSingle Pulsed Avalanche Energy (Note 2)986mJEARRepetitive Avalanche Energy (Note 1)26mJdv/dtPeak Diode Recovery dv/dt (Note 3)4.0V/nsPDTotal Power Dissipation(@TC = 25 °C) 260WDerating Factor above 25 °C2.08W/°CTSTG, TJOperating Junction Temperature & Storage Temperature- 55 ~ 150°CTLMaximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.300°CThermal CharacteristicsSymbolParameterValueUnitsMin.Typ.Max.RθJCThermal Resistance, Junction-to-Case--0.48°C/WRθCSThermal Resistance, Case to Sink-0.24-°C/WRθJAThermal Resistance, Junction-to-Ambient--40°C/WWFW9N90

5STP 12N8200中文资料

5STP 12N8200中文资料

ABB Semiconductors AG reserves the right to change specifications without notice.VDSM=8500VITAVM=1200AITRMS=1880AITSM=35000AVT0=1.25VrT=0.480mΩPhase Control Thyristor

5STP 12N8500

Doc. No. 5SYA1044-02 Sep. 01

•Patented free-floating silicon technology•Low on-state and switching losses•Designed for traction, energy and industrial applications•Optimum power handling capability•Interdigitated amplifying gateBlockingPart Number5STP 12N85005STP 12N82005STP 12N7800ConditionsVDSMVRSM8500 V8200 V7800 Vf = 5 Hz, tp = 10msVDRMVRRM8000 V7700 V7300 Vf = 50 Hz, tp = 10msVRSM19000 V8600 V8200 Vtp = 5ms, single pulseIDSM≤ 1000 mAVDSMIRSM≤ 400 mAVRSMTj = 90°CdV/dtcrit2000 V/µsExp. to 0.67 x VDRM, Tj = 90°CMechanical data

F

MMounting forcenom.90kN

min.81kN

max.108kNaAccelerationDevice unclampedDevice clamped50100m/s2m/s2

mWeight2.9kg

NT90TNLBDAC24VSF0.6中文资料

NT90TNLBDAC24VSF0.6中文资料

Features

󰀁 Small size, light weight. Low coil power consumption, heavy contact load. Strong anti-shock and anti-vibration, high

reliability, long life.

󰀁 Suitable for automobile, machine, electronic equipment, air conditioner and household appliance applications.

󰀁 PC board mounting and direct insert mounting available.Ordering Information

NT90T H L A S DC12V C B 0.9

1 2 3 4 5 6 7 8 9

1 Part number：NT90T、NT90T22 Load：H:30A；N:40A

3 High：NIL: Standard；L: Low profile type

4 Contact arrangement：A:1A；B:1B；C:1C

5 Enclosure：S: Sealed type；D: Dust cover；

E: Covered；O: Open type6 Coil rated Voltage(V)：AC:12,24,110,120,220 DC:3,5,6,9,12,15,18,24,48,110

7 Contact material：C: Ag󰀁CdO；S: Ag󰀁SnO28 Resist heat class：B:130℃ F:155℃

9 Coil power consumption：0.6:0.6W；0.9:0.9W

NIL:2VA

Contact Data

Contact Arrangement1A󰀁SPSTBNO󰀃f1B󰀁SPSTNC󰀃f1C󰀁SPDT(B-M)󰀃