MJD50T4G;MJD47T4G;MJD50G;MJD47G;MJD47T4;中文规格书,Datasheet资料

1/8August 2002MJD122-1/MJD122T4MJD127-1/MJD127T4COMPLEMENTARY POWER DARLINGTON TRANSISTORSs STMicroelectronics PREFERRED SALESTYPES s LOW BASE-DRIVE REQUIREMENTS sINTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE sTHROUGH HOLE TO-251(IPAK)POWER PACKAGE IN TUBE (SUFFIX “-1”)sSURFACE MOUNTING TO-252(DPAK)POWER PACKAGE IN TAPE &REEL (SUFFIX “T4”)sELECTRICALLY SIMILAR TO TIP122AND TIP127APPLICATIONS:sGENERAL PURPOSE SWITCHING AND AMPLIFIERDESCRIPTIONThe MJD122and MJD127form complementary NPN -PNP pair.They are manufactured using Epitaxial Base technology for cost-effective performance.ABSOLUTE MAXIMUM RATINGSFor PNP types voltage and current values are negative.Ordering Code Marking Package Shipment MJD122T4MJD122-1MJD127T4MJD127-1MJD122MJD122MJD127MJD127TO-252(DPAK)TO-251(IPAK)TO-252(DPAK)TO-251(IPAK)Tape &Reel TubeTape &Reel TubeSymbolParameterValue UnitNPN MJD122PNPMJD127V CBO Collector-Base Voltage (I E =0)100V V CEO Collector-Emitter Voltage (I B =0)100V V EBO Emitter-Base Voltage (I C =0)5V I C Collector Current5A I CM Collector Peak Current (t p <5ms)8A I B Base Current0.1A P tot Total Dissipation at T c =25°C 20W T stg Storage Temperature–65to 150°C T jMax.Operating Junction Temperature150°C 32113TO-252DPAK (Suffix ”T4”)TO-251IPAK (Suffix ”-1”)INTERNAL SCHEMATIC DIAGRAMR 1Typ.=10K ΩR 2Typ.=150ΩMJD122-1/MJD122T4/MJD127-1/MJD127T42/8THERMAL DATAELECTRICAL CHARACTERISTICS (T j =25°C unless otherwise specified)*Pulsed:Pulse duration =300µs,duty cycle ≤2%.For PNP types voltage and current values are negative.R thj-case R thj-ambThermal Resistance Junction-case Thermal Resistance Junction-ambientMax Max6.25100°C/W °C/WSymbol Parameter Test ConditionsMin.Typ.Max.Unit I CBO Collector Cut-off Current (I E =0)V CB =100V 10µA I CEO Collector Cut-off Current (I B =0)V CE =50V 10µA I CEX Collector Cut-offCurrent (V BE =-1.5V)V CE =100V V CE =100V T j =125°C10500µA µA I EBOEmitter Cut-off Current (I C =0)V EB =5V 2mA V CEO(sus)*Collector-EmitterSustaining Voltage (I B =0)I C =30mA100VV CE(sat)*Collector-Emitter Saturation Voltage I C =4A I C =8A I B =16mA I B =80mA 24V V V BE(sat)*Base-EmitterSaturation Voltage I C =8A I B =80mA 4.5V V BE(on)*Base-Emitter On VoltageI C =4A V CE =4V 2.8Vh FE *DC Current GainI C =4A I C =8AV CE =4V V CE =4V1000100120003/8MJD122-1/MJD122T4/MJD127-1/MJD127T4Base-Emitter Saturation Voltage (PNP type)Base-Emitter Saturation Voltage (NPN type)Collector-Emitter Saturation Voltage (PNP type)Collector-Emitter Saturation Voltage (NPN type)Safe Operating AreaDerating CurveMJD122-1/MJD122T4/MJD127-1/MJD127T44/8Switching Times Resistive Load (NPN type)Switching Times Resistive Load (PNP type)DC Current Gain (PNP type)Base-Emitter On Voltage (NPN type)DC Current Gain (NPN type)Base-Emitter On Voltage (PNP type)MJD122-1/MJD122T4/MJD127-1/MJD127T4 Freewheel Diode Forward Voltage(NPN type)Freewheel Diode Forward Voltage(PNP type)5/8MJD122-1/MJD122T4/MJD127-1/MJD127T46/8DIM.mm inchMIN.TYP.MAX.MIN.TYP.MAX.A 2.20 2.400.0870.094 A10.90 1.100.0350.043 A30.70 1.300.0280.051 B0.640.900.0250.035 B2 5.20 5.400.2040.213 B30.850.033 B50.300.012B60.950.037 C0.450.600.0180.024 C20.480.600.0190.024D 6.00 6.200.2370.244E 6.40 6.600.2520.260 G 4.40 4.600.1730.181 H15.9016.300.6260.642 L9.009.400.3540.370 L10.80 1.200.0310.047 L20.80 1.000.0310.039 V110o10oP032N_E TO-251(IPAK)MECHANICAL DATAMJD122-1/MJD122T4/MJD127-1/MJD127T4TO-252(DPAK)MECHANICAL DATAmm inchDIM.MIN.TYP.MAX.MIN.TYP.MAX.A 2.20 2.400.0870.094A10.90 1.100.0350.043A20.030.230.0010.009B0.640.900.0250.035B2 5.20 5.400.2040.213C0.450.600.0180.024C20.480.600.0190.024D 6.00 6.200.2360.244E 6.40 6.600.2520.260G 4.40 4.600.1730.181H9.3510.100.3680.398L20.80.031L40.60 1.000.0240.039V20o8o0o0oP032P_B7/8MJD122-1/MJD122T4/MJD127-1/MJD127T48/8Information furnished is believed to be accurate and reliable.However,STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third partieswhich may result from its use.No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.Specifications mentioned in this publication are subject to change without notice.This publication supersedes and replaces all information previously supplied.STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.©The ST logo is a registered trademark of STMicroelectronics©2002STMicroelectronics-Printed in Italy-All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia-Brazil-Canada-China-Finland-France-Germany-Hong Kong-India-Israel-Italy-Japan-Malaysia-Malta-Morocco Singapore-Spain-Sweden-Switzerland-United Kingdom-United States.©。

TO-203AB (DO-5)SCHOTTKY RECTIFIER60 Amp50HQ... SERIESBulletin PD-2.032 rev. G 11/0250HQ... Series2Bulletin PD-2.032 rev. G 11/02V FMMax. Forward Voltage Drop (1)0.60V @ 60A * See Fig. 10.78V @ 120A 0.53V @ 60A 0.69V @ 120A I RM Max. Reverse Leakage Current (1)5mA T J = 25 °C * See Fig. 2200mA T J = 125 °CC T Max. Junction Capacitance 2600pF V R = 5V DC , (test signal range 100Khz to 1Mhz) 25 °C L STypical Series Inductance7.5nH Measured from top of terminal to mounting plane dv/dt Max. Voltage Rate of Change10000V/ µs(Rated V R )T J = 25 °C T J = 125 °C V R = rated V RElectrical SpecificationsParameters50HQUnitsConditions(1) Pulse Width < 300µs, Duty Cycle < 2%T J Max. Junction Temperature Range -65 to 150°C T stgMax. Storage Temperature Range-65 to 150°C R thJC Max. Thermal Resistance Junction0.83°C/W DC o peration * See Fig. 4to Case R thCS Typical Thermal Resistance, Case to0.25°C/WMounting surface , smooth and greasedHeatsink wt Approximate Weight 15 (0.53)g (oz.)TMounting T orque Min.23 (20)Non-lubricated t hreads Max.46 (40)Case S tyleD O-203AB(DO-5)JEDECKg-cm (Ibf-in)Thermal-Mechanical SpecificationsParameters50HQUnitsConditionsI F(AV)Max. Average Forward Current60A50% duty cycle @ T C = 101°C, rectangular wave form * See Fig. 5I FSM Max. Peak One Cycle Non-Repetitive 10,8005µs Sine or 3µs Rect. pulse Surge Current * See Fig. 7115010ms Sine or 6ms Rect. pulseE AS Non-Repetitive A valanche E nergy 81mJ T J = 25 °C, I AS = 12 Amps, L = 1.12 mH I ARRepetitive A valanche C urrent12ACurrent decaying linearly to zero in 1 µsec Frequency limited by T J max. V A = 1.5 x V R typicalParameters50HQ UnitsConditionsAbsolute Maximum RatingsA Following any rated load condition andwith rated V RRM appliedPart number50HQ03550HQ04050HQ045V RMax. DC Reverse Voltage (V)V RWM Max. Working Peak Reverse Voltage (V)354045Voltage Ratings50HQ... Series3Bulletin PD-2.032 rev. F 11/0250HQ... Series4Bulletin PD-2.032 rev. G 11/02Fig. 8 - Unclamped Inductive Test CircuitFig. 5 - Maximum Allowable Case Temperature Vs. Average Forward CurrentFig. 6 - Forward Power Loss CharacteristicsFig. 7 - Maximum Non-Repetitive Surge CurrentFREE-WHEEL DIODE 40HFL40S02CURRENT MONITORHIGH-SPEEDSWITCH IRFP460LDUT Rg = 25 ohmVd = 25 Volt+10010001000010100100010000F S MpN o n -R e p e t i t i v e S u r g e C u r r e n t - I (A )Square Wave Pulse Duration - t (microsec)95105115125135145155020*********A l l o w a b l e C a s e T e m p e r a t u r e - (°C )F(AV)Average Forward Current - I (A)010203040500102030405060708090A v e r a g e P o w e r L o s s - (W a t t s )F(AV)Average Forward Current - I (A)50HQ... Series5Bulletin PD-2.032 rev. F 11/02 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7309Visit us at for sales contact information. 11/02Data and specifications subject to change without notice.This product has been designed for Industrial Level.Qualification Standards can be found on IR's Web site.分销商库存信息:VISHAY50HQ04550HQ03550HQ040。

20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Maximum Rated Forward Bias Safe Operating Area
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
−
−
500
−
−
500
−
−
140
−
−
100
−
Unit Vdc mA mA Vdc Vdc
−
pF MHz
ns ns ns
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 0.7 D = 0.5 0.5
0.3 0.2
0.2
0.1 0.1
0.07
0.05
0.05 0.02
MJF44H11 MJF45H11
Symbol VCEO(sus)
ICES IEBO VCE(sat) VBE(sat) hFE

Figure 5. Current Derating, Ambient
1000 500 C, CAPACITANCE (pF) 300 200 TJ = 25C 100 50 30 20 10 0 10 20 30 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (VOLTS)
0.3 0.2
TJ = 175C
0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 vF, INSTANTANEOUS VOLTAGE (VOLTS)
1.0
2.0
3.0
4.0
5.0Biblioteka 6.07.08.0
9.0
10
Figure 1. Typical Forward Voltage
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 4. Current Derating, Case
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 180 200 TA, AMBIENT TEMPERATURE (C) SINE WAVE OR SQUARE WAVE SURFACE MOUNTED ON MIN. PAD SIZE RECOMMENDED dc TJ = 175C RATED VOLTAGE APPLIED RqJA = 80C/W
Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 7