NJVMJD350T4G;NJVMJD340T4G;中文规格书,Datasheet资料

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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ
A Y WW J3x0 G
= = = =
Assembly Location Year Work Week Device Code x= 4 or 5 = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.
Semiconductor Components Industries, LLC, 2012
February, 2012 − Rev. 10
1
Publication Order Number: MJD340/D
/
MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP)
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
0.6
0.4 VCE(sat) @ IC/IB = 10 0.2 IC/IB = 5 0 10 20 30 50 100 200 300 IC, COLLECTOR CURRENT (mA) 500
Figure 2. “On” Voltages
MJD350
200 TJ = 150C 25C V, VOLTAGE (VOLTS) - 55C 1 1 TJ = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6
TYPICAL CHARACTERISTICS MJD340
300 200 hFE , DC CURRENT GAIN TJ = 150C +100C + 25C VCE = 2 V VCE = 10 V
100 70 50 30 20
- 55C
10
1
2
3
5
7
10
20 30 50 IC, COLLECTOR CURRENT (mAdc)
0.2 VCE(sat) 0 5 7 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC/IB = 5 200 300 500
10
VCE(sat) VBE(on)
V V
1.5
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product (IC = 50 mA, VCE = 10 V, f = 10 MHz)
fT
10

MHz
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
MJD350
hFE , DC CURRENT GAIN
100 70 50 30 20
VBE @ VCE = 10 V
0.4
IC/IB = 10
VCE = 2 V VCC = 10 V 5 7 10 20 30 200 300 50 70 100 IC, COLLECTOR CURRENT (mA) 500
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3) (IC = 1 mA, IB = 0) Collector Cutoff Current (VCB = 300 V, IE = 0) Emitter Cutoff Current (VBE = 3 V, IC = 0)
Features
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix) Electrically Similar to Popular MJE340 and MJE350 300 V (Min) − VCEO(sus) 0.5 A Rated Collector Current Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Packages*
MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors
DPAK For Surface Mount Applications
Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications.
PD
W W/C W W/C C
PD
TJ, Tstg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS, 15 WATTS
DPAK CASE 369C STYLE 1
MARKING DIAGRAM
AYWW J3x0G
MAXIMUM RATINGS
Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Continuous Peak Total Power Dissipation @ TC = 25C Derate above 25C Total Power Dissipation (Note 1) @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IC Max 300 300 3 0.5 0.75 15 0.12 1.56 0.012 − 65 to +150 Unit Vdc Vdc Vdc Adc