APM4463KC-TUL中文资料
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P-Channel Enhancement Mode MOSFETCopyright ANPEC Electronics Corp.Rev. B.1 - Mar., 2005www.anpec.com.tw1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advisecustomers to obtain the latest version of relevant information to verify before placing orders.
APM4463KFeatures
Applications• Power Management in Notebook Computer,
Portable Equipment and Battery Powered Systems
Pin Description
Ordering and Marking InformationP-Channel MOSFETAPM4463Handling CodeTemp. RangePackage CodePackage Code K : SOP-8Operating Junction Temp. Range C : -55 to 150°CHandling Code TR : Tape & ReelLead Free Code L : Lead Free Device Blank : Original Device
APM4463 K :XXXXX - Date Code
Lead Free Code
APM4463XXXXX
• -20V/-10A ,
RDS(ON)=12mΩ(typ.) @ VGS=-4.5V RDS(ON)=18mΩ(typ.) @ VGS=-2.5V• Super High Dense Cell Design
• Reliable and Rugged
• SOP-8 Package
• Lead Free Available (RoHS Compliant)
SSSG
DDDD
Top View of SOP − 8
GDSSSDDD(4)
(1, 2, 3)
(5, 6, 7, 8)
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
元器件交易网www.cecb2b.comCopyright ANPEC Electronics Corp.Rev. B.1 - Mar., 2005www.anpec.com.tw2
APM4463KAbsolute Maximum Ratings (T
A = 25°C unless otherwise noted)
Electrical Characteristics (T
A = 25°C unless otherwise noted)
Symbol Parameter Rating Unit VDSS Drain-Source Voltage
-20
VGSS Gate-Source Voltage
±16
V
ID* Continuous Drain Current -10 IDM* Pulsed Drain Current
VGS=-4.5V -40 A
IS* Diode Continuous Forward Current -2.3 A TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150
°C
TA=25°C 2 PD* Maximum Power Dissipation
TA=100°C 0.8
W
RθJA* Thermal Resistance-Junction to Ambient 62.5 °C/W
Note: *Surface Mounted on 1in2 pad area, t ≤ 10sec.
APM4463K Symbol Parameter Test Condition Min. Typ. Max. Unit
Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA -20 V VDS=-16V, VGS=0V -1 IDSS Zero Gate Voltage Drain Current TJ=85°C -30
µA
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250µA -0.7 -0.9 -1.5 V IGSS Gate Leakage Current VGS=±16V, VDS=0V ±100 nA VGS=-4.5V, IDS=-10A 12 17 RDS(ON) a Drain-Source On-state Resistance VGS=-2.5V, IDS=-8A 18 25
mΩ
VSDa Diode Forward Voltage ISD=-2.3A, VGS=0V -0.7 -1.3 V Dynamic Characteristics b RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 5 Ω
Ciss Input Capacitance 4540 Coss Output Capacitance 1100 Crss Reverse Transfer Capacitance VGS=0V, VDS=-15V, Frequency=1.0MHz 810
pF
td(ON) Turn-on Delay Time 40 60 Tr Turn-on Rise Time 40 60 td(OFF) Turn-off Delay Time 170 270 Tf Turn-off Fall Time VDD=-10V, RL=10Ω, IDS=-1A,VGEN=-4.5V, RG=6Ω 90 150
ns
元器件交易网www.cecb2b.comCopyright ANPEC Electronics Corp.Rev. B.1 - Mar., 2005www.anpec.com.tw3
APM4463KElectrical Characteristics (Cont.) (T
A = 25°C unless otherwise noted)
APM4463K Symbol Parameter Test Condition Min. Typ. Max. Unit
Gate Charge Characteristics b Qg Total Gate Charge 37 45 Qgs Gate-Source Charge 6.5 Qgd Gate-Drain Charge
VDS=-10V, VGS=-4.5V,
IDS=-10A
2.5
nC
Notes: a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing.
元器件交易网www.cecb2b.comCopyright ANPEC Electronics Corp.Rev. B.1 - Mar., 2005www.anpec.com.tw4
APM4463K1E-41E-30.010.1110301E-30.010.112Mounted on 1in2 padRθJA : 62.5 oC/W
0.010.020.050.10.2Single Pulse
Duty = 0.5
Typical Characteristics-ID - Drain Current (A)Drain Current Tj - Junction Temperature (°C)Safe Operation Area -VDS - Drain - Source Voltage (V)Thermal Transient ImpedanceSquare Wave Pulse Duration (sec)Power Dissipation
Ptot - Power (W)
Tj - Junction Temperature (°C)
-ID - Drain Current (A)0204060801001201401600.00.51.01.52.02.5TA=25oC 020406080100120140160024681012TA=25oC,VG=-4.5V
0.010.11101000.010.1110100Rds(on) Limit
1sTA=25oC
10ms100ms
DC Normalize
d
Transient Thermal Resistance
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