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Ultra Low ON-Resistance, Low Voltage, Dual, SPDT Analog SwitchGeneral DescriptionThe HTS3005 is a dual, low on-resistance, low voltage, bidirectional, single-pole/double-throw (SPDT) CMOS analog switch designed to operate from a single 1.8V to 5.5V powersupply. Targeted applications include battery powered equipment that benefit from lowR ON (0.5Ω) and fast switching speeds (t ON = 50ns, t OFF = 15ns).The on resistance profile is very flat over the full analog signal range. This ensuresexcellent linearity and low distortion when switching audio signals.The HTS3005 is a committed dual single-pole/double- throw (SPDT) that consist of twonormally open (NO) and two normally close (NC) switches. This configuration can beused as a dual 2-to-1 multiplexer.HTS3005 is available in Green TDFN-3×3-10L and MSOP-10 packages.Featuresn Low Voltage Operation: 1.8V to 5.5Vn Low On-Resistance: 0.5Ω (TYP)n Low On-Resistance Flatnessn-3dB Bandwidth: 15MHzn Fast Switching Times:Øt ON 50nsØt OFF 15nsn Rail-to-Rail Operationn Typical Power Consumption (<0.01µW)n TTL/CMOS Compatiblen Microsize PackagesApplicationn Battery-powered, Handheld, and Portable EquipmentØCellular/Mobile PhonesØLaptops, Notebooks, Palmtopsn Communication Systemsn Sample-and-Hold Circuitsn Audio Signal Routingn Audio and Video Switchingn Portable Test and Measurementn Medical EquipmentUltra Low ON-Resistance, Low Voltage, Dual, SPDT Analog Switch Pin ConfigurationsPin DescriptionSymbol DescriptionV+ Power supply.GND Ground.IN1, IN2Digital control pin to connect the COM terminal to the NO or NC terminals.COM1, COM2Common terminal.NO1, NO2Normally-open terminal.NC1, NC2Normally-closed terminal.Ordering InformationType Number Package Name Package Quantity Marking CodeHTS3005XV10/R6MSOP10 Tape and Reel,3000C3005XHTS3005XF10/R6TDFN-3×3-10 Tape and Reel,3000C3005X Recommended Operating Conditionsn Operating voltage range: 1.8V to 5.5Vn Specified temperature range: -40℃ to 125℃Absolute Maximum RatingsParameter Symbol Absolute Maximum Rating Unit V+ to GND-0.3V to 6V V Analog, Digital voltage range (1)-0.3V to (V+) + 0.3V VContinuous Current NO, NC, or COM±300mA mA Peak Current NO, NC, or COM ±500mA mAOperating Temperature Range -40℃ to +125℃ ℃TemperatureStorage--65℃ to +150℃℃Junction150℃℃Package Thermal Resistance @ TA = 25℃TDFN-3×3-10L, θJA 33℃/W ℃/W MSOP-10, θJA205℃/W ℃/W Lead Temperature (soldering, 10s)260℃℃ESD SusceptibilityHBM2000V V MM400VVAttention: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.(1) Signals on NC, NO, or COM exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.(2) Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.Ultra Low ON-Resistance, Low Voltage, Dual, SPDT Analog SwitchElectrical CharacteristicsUltra Low ON-Resistance, Low Voltage, Dual, SPDT Analog SwitchV+ = +5V, GND = 0V, TA = -40℃ to +125℃, typical values are at TA = + 25℃, unless otherwise noted SymbolParameterConditionsMin.Typ.Max.UnitANALOG SWITCH V NO ,V NC ,V COM Analog Signal RangeT A =-40℃ to ﹢125℃ 0 V +V R ONOn-Resistance0 ≤ V NO or V NC ≤ V +, I COM = -10mA,Test Circuit 10.50.9ΩT A =-40℃ to ﹢125℃1.1Ω∆R ONOn-Resistance Match Between Channels0 ≤ V NO or V NC ≤ V +, I COM = -10mA,Test Circuit 10.050.09ΩT A =-40℃ to ﹢125℃0.12ΩR FLAT(ON)On-Resistance Flatness0 ≤ V NO or V NC ≤ V +, I COM = -10mA,Test Circuit 10.250.3ΩT A =-40℃ to ﹢125℃0.4ΩLEAKAGE CURRENTS I NC(OFF), I NO(OFF)Source OFF Leakage CurrentV NO or V NC = 4.5V/1V, V COM = 1V/4.5V, V + = +5.5V, Test Circuit 2±4±10nA T A =-40℃ to ﹢125℃±1000nA I NC(ON),I NO(ON), I COM(ON),Channel ON Leakage CurrentV NO or V NC = V COM = 1V or 4.5V, V + = +5.5V, Test Circuit 3±4±10nA T A =-40℃ to ﹢125℃±1000nADIGITAL INPUTS V INH Input High Voltage T A =-40℃ to ﹢125℃ 2.4V V INL Input Low VoltageT A =-40℃ to ﹢125℃0.8V I INL or I INHInput CurrentV IN = V INH or V INL ±0.01±0.1μA T A =-40℃ to ﹢125℃±1μADYNAMIC CHARACTERISTICS t ON Turn-On Time V NO or V NC = 3V, R L = 300Ω, C L = 35pF,Test Circuit 450nS t OFF Turn-Off Time V NO or V NC = 3V, R L = 300Ω, C L = 35pF,Test Circuit 415nS Q Charge Injection C L = 1.0nF, V G = 0V, R G = 0Ω, Test Circuit 520pC t DBreak-Before-MakeTime Delay V NO1 or V NC1 = V NO2 or V NC2 = 3V, R L = 300Ω, C L = 35pF, Test Circuit 6 10nS O ISOOff IsolationR L =50ΩC L = 5pF, TestCircuit 7f = 100kHz -70dB f = 10kHz -85dBElectrical CharacteristicsV+ = +5V, GND = 0V, TA = -40℃ to +125℃, typical values are at TA = + 25℃, unless otherwise notedUltra Low ON-Resistance, Low Voltage, Dual, SPDT Analog SwitchSymbol Parameter Conditions Min.Typ.Max.UnitX TALK Channel-to-ChannelCrosstalkRL= 50Ω,CL= 5pF,Test Circuit 8f = 100kHz -90 dBf = 10kHz-105dBTHD Total HarmonicDistortionf = 20Hz to 20kHz, VCOM=3.5V P-P, RL= 600Ω, CL=50pF0.065 %BW-3dB Bandwidth RL= 50Ω, CL= 5pF, TestCircuit 915 MHZCNC(OFF),CNO(OFF)Source off Capacitance 80 pFCNC(ON),CNO(ON),CCOM(ON)Channel on Capacitance380pF POWER REQUIREMENTSI +Power Supply CurrentV+= +5.5V, VIN= 0V or 5V 0.001μAT A=-40℃ to﹢125℃1μAElectrical CharacteristicsUltra Low ON-Resistance, Low Voltage, Dual, SPDT Analog SwitchV+ = +3V, GND = 0V, TA = -40℃ to +125℃, typical values are at TA = + 25℃, unless otherwise noted.SymbolParameterConditionsMin.Typ.Max.UnitANALOG SWITCH V NO ,V NC ,V COM Analog Signal RangeT A =-40℃ to ﹢125℃ 0 V +V R ONOn-Resistance0 ≤ V NO or V NC ≤ V +, I COM = -10mA,Test Circuit 10.61.0ΩT A =-40℃ to ﹢125℃1.3Ω∆R ONOn-Resistance Match Between Channels0 ≤ V NO or V NC ≤ V +, I COM = -10mA,Test Circuit 10.050.1ΩT A =-40℃ to ﹢125℃0.13ΩR FLAT(ON)On-Resistance Flatness0 ≤ V NO or V NC ≤ V +, I COM = -10mA,Test Circuit 10.250.3ΩT A =-40℃ to ﹢125℃0.4ΩLEAKAGE CURRENTS I NC(OFF), I NO(OFF)Source OFF Leakage CurrentV NO or V NC =3V/1V, V COM = 1V/3V, V + = +3.3V, Test Circuit 2±5±11nA T A =-40℃ to ﹢125℃±1000nA I NC(ON),I NO(ON), I COM(ON),Channel ON Leakage CurrentV NO or V NC = V COM = 1V or 3V, V + = +3.3V, Test Circuit 3±5±11nA T A =-40℃ to ﹢125℃±1000nADIGITAL INPUTS V INH Input High Voltage T A =-40℃ to ﹢125℃ 2.0V V INL Input Low VoltageT A =-40℃ to ﹢125℃0.4V I INL or I INHInput CurrentV IN = V INH or V INL ±0.01±0.1μA T A =-40℃ to ﹢125℃±1μADYNAMIC CHARACTERISTICS t ON Turn-On Time V NO or V NC = 2V, R L = 300Ω, C L = 35pF,Test Circuit 450nS t OFF Turn-Off Time V NO or V NC = 2V, R L = 300Ω, C L = 35pF,Test Circuit 417nS Q Charge Injection C L = 1.0nF, V G = 0V, R G = 0Ω, Test Circuit 525pC t DBreak-Before-MakeTime Delay V NO1 or V NC1 = V NO2 or V NC2 = 2V, R L = 300Ω, C L = 35pF, Test Circuit 6 11nS O ISOOff IsolationR L =50ΩC L = 5pF, TestCircuit 7f = 100kHz -70dB f = 10kHz -85dBElectrical CharacteristicsV+ = +5V, GND = 0V, TA = -40℃ to +125℃, typical values are at TA = + 25℃, unless otherwise notedUltra Low ON-Resistance, Low Voltage, Dual, SPDT Analog SwitchSymbol Parameter Conditions Min.Typ.Max.UnitX TALK Channel-to-ChannelCrosstalkRL= 50Ω,CL= 5pF,Test Circuit 8f = 100kHz -90 dBf = 10kHz-105dBTHD Total HarmonicDistortionf = 20Hz to 20kHz, VCOM=2VP-P, RL= 600Ω, CL=50pF0.06 %BW-3dB Bandwidth RL= 50Ω, CL= 5pF, TestCircuit 915 MHZCNC(OFF),CNO(OFF)Source off Capacitance 80 pFCNC(ON),CNO(ON),CCOM(ON)Channel on Capacitance380pF POWER REQUIREMENTSI +Power Supply CurrentV+= +3.3V, VIN= 0V or 5V 0.001μAT A=-40℃ to﹢125℃1μAUltra Low ON-Resistance, Low Voltage, Dual, SPDT Analog Switch Type Performance CharacteristicsUltra Low ON-Resistance, Low Voltage, Dual, SPDT Analog Switch Application NotesTest Circuit 1. On ResistanceTest Circuit 2. Off Leakage Test Circuit 3. On LeakageTest Circuit 4. Switching TimesTest Circuit 5. Charge InjectionUltra Low ON-Resistance, Low Voltage, Dual, SPDT Analog Switch Application NotesTest Circuit 6. Break-Before-Make Time Delay, tDTest Circuit 7. Off IsolationApplication Notes Data SheetHTS3005Ultra Low ON-Resistance, Low Voltage, Dual, SPDT Analog SwitchTest Circuit 8. Channel-to-Channel CrosstalkTest Circuit 9. -3dB BandwidthPackage OutlinesMSOP-10Data Sheet HTS3005Ultra Low ON-Resistance, Low Voltage, Dual, SPDT Analog SwitchHTS3005Data Sheet Ultra Low ON-Resistance, Low Voltage, Dual, SPDT Analog Switch Package OutlinesTDFN-3×3-10L。

V I S H AY S E M I C O N D U C T O R SOptocouplers and Solid-State RelaysHow to Use Optocoupler Normalized CurvesA P P L I C A T I O N N O T By Dimitrij Martins and Lars BayerINTRODUCTIONOptocouplers are used for signal transfer between a safe and a potentially hazardous or electrically noisy environment using galvanic isolation. The isolation voltage and noise rejection characteristics of the optocoupler are basically determined by the mechanical package design and isolating materials.A phototransistor optocoupler has an infrared emitting diode, which is optically coupled to a silicon phototransistor detector. The infrared light of the LED irradiates the photosensitive base collector junction of the phototransistor which is amplified by the collector current of the transistor.HOW TO USE THE NORMALIZED CURVESThe gain of the optocoupler is expressed as a currenttransfer ratio (CTR), which is the collector current (I C ) of the output divided by the forward current (I F ) of the input andmultiplied by 100 %. (1)There are typically a number of CTR groups (binning) to choose from when selecting an optocoupler. CTR is nota static value. t is affected by the forward current (F ),the collector-emitter voltage (V CE ), and the ambient temperature (T amb ). The datasheets include curves that show how each of these values can change based on ambient temperature. To be able to compare the performance of the optocoupler over temperature we normalize the curves. Normalization is the scaling of data to a nominal condition, typically at 25 °C and the coupler-specific forward current, as the graph in Fig. 1 shows (NCTR at T amb = 25 °C and I F = 5 mA is 1.0).Fig. 1 - Normalized Current Transfer Ratio (non-saturated) vs.Ambient TemperatureTwo separate CTRs are often needed to complete the interface design. One for the non-saturated or linear operation with a collector emitter voltage (V CE ) of 5.0 V and the second one for the saturated or switching operation witha collector emitter voltage (V CE ) of 0.4 V. The Fig. 1 illustratesthe normalized CTR curves vs. forward current for different ambient temperatures for the non-saturated operation and Fig. 2 for the saturated operation.CTR = I CI F---- x 100 %0.20.4 0.6 0.8 1.0 1.2N C T R - N o r m a l i z e d C T R (n o n -s a t u r a t e d )-60-40-2020406080100120T amb - Ambient Temperature (°C)How to Use Optocoupler Normalized CurvesA P P L I C A T I O N N O T Fig. 2 - Normalized Current Transfer Ratio (saturated) vs.Ambient TemperatureThe normalized form of the CTR graph in Fig. 3 and Fig. 4 provides a reference for a quick estimation on the variation of the CTR at different forward currents and ambient temperatures ranging from -55 °C to +100 °C.Fig. 3 - Normalized Current Transfer Ratio (non-saturated) vs.Forward CurrentFig. 4 - Normalized Current Transfer Ratio (saturated) vs.Forward CurrentThe following design example illustrates how the normalized curves can be used to calculate the appropriate load resistors.Example 1Using the VOL617A-3 optocoupler with a CTR range of 100 % to 200 % at a forward current of 5 mA in thenon-saturated mode with following conditions: T amb = 0 °Cto +70 °C, I F = 5 mA, V CC = 5 V, V CE = 0.4 VSOLUTIONStep 1Determine the saturated NCTR factor for the required temperature from 0 °C to +70 °C and a forward current of 5 mA by using Fig. 5.Fig. 5 - Normalized Current Transfer Ratio (saturated) vs.Ambient Temperature0.20.4 0.6 0.8 1.0 1.2 N C T R - N o r m a l i z e d C T R (s a t )-60-40-2020406080100120T amb - Ambient Temperature (°C)00.20.40.60.81.01.21.40.1110100N C T R -N o r m a l i z e d C T R (N S )I F -Forward Current (mA)0.20.40.60.81.01.20.1110100N C T R -N o r m a l i z e d C T R (s a t )I F -Forward Current (mA)N C T R - N o r m a l i z e d C T R (s a t .)T amb - Ambient Temperature (°C)0.75How to Use Optocoupler Normalized CurvesA P P L I C A T I O N N O T With the temperature range of 0 °C to +70 °C the CTR undergoes a change between 0 % and -25 % at a forward current of 5 mA.The CTR sat range over the required temperature will be about 100 x 0.75 = 75 % to 200 % x 0.75 = 150 % for a forward current of 5 mA. Step 2Select the load resistor using the following equation: (2)Example 2:Using an VOL617A-3 optocoupler in the circuit shown in Fig. 6, determine the worst-case load resistor under the following operation conditions:T amb = 75 °C, I F = 7 mA, V CC = 5 V, V CE = 0.4 V, logic load = microcontroller I/O VOL617A-3 characteristics:CTR non-sat. = 100 % at F = 5 mA, V CE = 5.0 V, and T amb = 25 °CFig. 6 - VOL617A-3 to Microcontroller InterfaceSOLUTIONStep 1Determine the saturated NCTR factor for the ambienttemperature of 75 °C and a forward current of 7 mA, which can be found in Fig. 7.Fig. 7 - Normalized Current Transfer Ration (saturated) vs.Forward CurrentThe saturated NCTR factor is 0.71.Assuming a ten year service life period of the interface circuit, allowance needs to be made for additional CTR reduction of approximately 20 % on account of degradation.Making an additional tolerance allowance of approximately -25 % for the CTR will result in a safe minimum value of approximately 42.6 %.(4) (5)Step 2Select the minimum load resistor using the followingequation:(6)R L V CC - V CEsat.I F x CTR sat.-------------------------------- 5 V - 0.4 V 5 mA x 0.75-------------------------------- 1.22 k ≥≥≥ΩV 00.20.40.60.711.01.20.1110100N C T R -N o r m al i z e d C T R (s a t )I F -Forward Current (mA)0.8CTR sat. = CTR min. x NCTR x aging x toleranceCTR sat. = 100 % x 0.71 x 0.8 x 0.75 = 42.6 %R Lmin.V CC - V CEsat.I F x CTR sat.-------------------------------- 5 V - 0.4 V 7 mA x 0.426----------------------------------- 1.54 k ≥≥≥Ω。

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应用• 用于汽车和工业应用的标准开关和肖特基二极管资料来源• 数据表：BAS16L (/ppg?86187)；BAS40L (/ppg?86189)• 应用说明：DFN 封装的焊接建议 (/doc?86198)• 如有技术问题，请联系：*************************,***********************,*********************• 材料分类：关于合规性的定义，请参见/doc?99912Available采用超小尺寸 DFN1006-2A 封装的小信号 40 V 肖特基和 100 V 开关二极管，带有可见和可润湿侧翼，适用于商业和汽车应用主要优势• 无引线超小型 DFN1006-2A 封装 (1 mm × 0.6 mm × 0.45 mm)，带有可润湿侧翼• 功耗优于 SOT-23• 提供通过 AEC-Q101 认证的版本• 表面贴装器件 (SMD) 塑料封装，带有可见和侧壁电镀/可润湿侧翼• 旨在节省空间并提高热性能• BAS40L 由一个 PN 结保护环保护，防止过电压，例如静电放电• 根据 J-STD-020 标准，湿度敏感度 (MSL) 为 1 级• UL 94 V-0 易燃性等级• 支持汽车系统的自动光学检测 (AOI)• 可通过标准的视觉检测来检查焊接情况；不需要 X 射线• 符合 RoHS 标准，不含卤素，并且是 Vishay 绿色产品BAS16L Vishay SemiconductorsSmall Signal Fast Switching Diode 链接至其他资源机械数据案例：DFN1006-2A 重量：0.83 mg模塑料的易燃性等级： UL 94 V-0端子：保证了高温焊接：最高峰值温度 260 ℃Peak temperature max. 260 °C 包装代码/选项：每 7" 卷 08/10K （8 mm 带子）/doc?99912(1)Square wave, T j= 25 °C prior to surgeAvailable21 年 3 月 30 日修订采用超小尺寸 DFN1006-2A 封装的小信号 40 V 肖特基和 100 V 开关二极管，带有可见和可润湿侧翼，适用于商业和汽车应用特性• 硅外延平面二极管• 快速开关二极管• 无引线超小型 DFN1006-2A 封装 (1 mm × 0.6 mm × 0.45 mm)• 功耗优于 SOT-23• 表面贴装器件 (SMD) 塑料封装，带有可 见和侧壁电镀/可润湿侧翼• 可通过标准的视觉检测来检查焊接情况。