MW7IC008NT1MW7IC008NT11RF LDMOS Wideband Integrated Power AmplifierThe MW7IC008N wideband integrated circuit is designed with on--chip matching that makes it usable from 20to 1000MHz.This multi--stage structure is rated for 24to 32volt operation and covers most narrow bandwidth communication application formats.Driver Applications∙Typical CW Performance:V DD =28Volts,I DQ1=25mA,I DQ2=75mAFrequency G ps (dB)PAE (%)100MHz @11W CW 23.555400MHz @9W CW 22.541900MHz @6.5W CW23.534∙Capable of Handling 10:1VSWR,@32Vdc,900MHz,P out =6.5Watts CW (3dB Input Overdrive from Rated P out )∙Stable into a 5:1VSWR.All Spurs Below --60dBc @1mW to 8Watts CW P out @900MHz∙Typical P out @1dB Compression Point ≃11Watts CW @100MHz,9Watts CW @400MHz,6.5Watts CW @900MHz Features∙Broadband,Single Matching Network from 20to 1000MHz∙Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)∙Integrated ESD Protection∙In Tape and Reel.T1Suffix =1,000Units,16mm Tape Width,13--inch Reel.Figure 2.Pin Connections123456789101112181716151413242322212019NC V T T S 1V G L S 2N CR F i n S 2R F o u t S 1/V D S 1N C N CN C N CRF outS2/V DS2NC V G S 2V T T S 2NC NC NC NCN C V GS1RF inS1NC NC V GLS11.Refer to AN1977,Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987,Quiescent Current Control for the RF Integrated Circuit Device Family .Go to /rf.Select Documentation/Application Notes --AN1977or AN1987.Document Number:MW7IC008NRev.3,12/2013Freescale Semiconductor Technical Data100--1000MHz,8W PEAK,28V RF LDMOS WIDEBANDINTEGRATED POWER AMPLIFIERMW7IC008NT12RF Device DataFreescale Semiconductor,Inc.MW7IC008NT1Table 1.Maximum RatingsRatingSymbol Value Unit Drain--Source Voltage V DSS --0.5,+65Vdc Gate--Source Voltage V GS --6.0,+12Vdc Operating VoltageV DD 32,+0Vdc Storage Temperature Range T stg --65to +150︒C Operating Junction Temperature T J 150︒C 100MHz CW Operation @T A =25︒C (3)400MHz CW Operation @T A =25︒C (3)900MHz CW Operation @T A =25︒C (3)CW1165W W W Input Power100MHz 400MHz 900MHzP in 272338dBmTable 2.Thermal CharacteristicsCharacteristicSymbol Value (1,2)Unit Thermal Resistance,Junction to Case (CW Signal @100MHz)(Case Temperature 82︒C,P out =11W CW)Stage 1,28Vdc,I DQ1=25mA Stage 2,28Vdc,I DQ2=75mA (CW Signal @400MHz)(Case Temperature 87︒C,P out =9W CW)Stage 1,28Vdc,I DQ1=25mA Stage 2,28Vdc,I DQ2=75mA (CW Signal @900MHz)(Case Temperature 86︒C,P out =6.5W CW)Stage 1,28Vdc,I DQ1=25mA Stage 2,28Vdc,I DQ2=75mAR θJC5.34.94.42.73.53.2︒C/WTable 3.ESD Protection CharacteristicsTest MethodologyClass Human Body Model (per JESD22--A114)1B Machine Model (per EIA/JESD22--A115)A Charge Device Model (per JESD22--C101)IIITable 4.Moisture Sensitivity LevelTest MethodologyRating Package Peak TemperatureUnit Per JESD22--A113,IPC/JEDEC J--STD--0203260︒C1.MTTF calculator available at /rf.Select Software &Tools/Development Tools/Calculators to access MTTF calculators by product.2.Refer to AN1955,Thermal Measurement Methodology of RF Power Amplifiers.Go to /rf.Select Documentation/Application Notes --AN1955.3.CW Ratings at the individual frequencies are limited by a 100--year MTTF requirement.See MTTF calculator (referenced in Note 1).MW7IC008NT13RF Device DataFreescale Semiconductor,Inc.Table 5.Electrical Characteristics (T A =25︒C unless otherwise noted)CharacteristicSymbolMinTypMaxUnitStage 1—Off CharacteristicsZero Gate Voltage Drain Leakage Current (V DS =65Vdc,V GS =0Vdc)I DSS ——10μAdc Zero Gate Voltage Drain Leakage Current (V DS =28Vdc,V GS =0Vdc)I DSS ——1μAdc Gate--Source Leakage Current (V GS =1.5Vdc,V DS =0Vdc)I GSS——10μAdcStage 1—On Characteristics Gate Threshold Voltage(V DS =10Vdc,I D =5.3μAdc)V GS(th) 1.32 2.8Vdc Gate Quiescent Voltage(V DD =28Vdc,I D =25mAdc,Measured in Functional Test)V GS(Q)22.83.5VdcStage 2—Off CharacteristicsZero Gate Voltage Drain Leakage Current (V DS =65Vdc,V GS =0Vdc)I DSS ——10μAdc Zero Gate Voltage Drain Leakage Current (V DS =28Vdc,V GS =0Vdc)I DSS ——1μAdc Gate--Source Leakage Current (V GS =1.5Vdc,V DS =0Vdc)I GSS——10μAdcStage 2—On Characteristics Gate Threshold Voltage(V DS =10Vdc,I D =23μAdc)V GS(th) 1.32 2.8Vdc Gate Quiescent Voltage(V DD =28Vdc,I D =75mAdc,Measured in Functional Test)V GS(Q)2 2.7 3.5Vdc Drain--Source On--Voltage(V GS =10Vdc,I D =3.6Adc)V DS(on)0.10.31VdcFunctional Tests (1)(In Freescale Test Fixture,50ohm system)V DD =28Vdc,I DQ1=25mA,I DQ2=75mA,P out =6.5W CW,f =900MHzPower GainG ps 21.523.531.5dB Power Added Efficiency PAE 3034—%Input Return LossIRL—--15--11dB Typical Broadband Performance (In Freescale Test Fixture,50ohm system)V DD =28Vdc,I DQ1=25mA,I DQ2=75mAFrequency G ps (dB)PAE (%)IRL (dB)100MHz @11W CW 23.555--20400MHz @9W CW 22.541--17900MHz @6.5W CW23.534--151.Part internally matched both on input and output.(continued)4RF Device DataFreescale Semiconductor,Inc.MW7IC008NT1Table 5.Electrical Characteristics (T A =25︒C unless otherwise noted)(continued)Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture,50ohm system)V DD =28Vdc,I DQ1=25mA,I DQ2=75mA,100--1000MHz BandwidthCharacteristicSymbol Min Typ Max Unit IMD Symmetry @6.8W PEP ,P out where IMD Third Order Intermodulation 30dBc (1)(Delta IMD Third Order Intermodulation between Upper and Lower Sidebands >2dB)IMD sym—0.1—MHzVBW Resonance Point (1)(IMD Third Order Intermodulation Inflection Point)VBW res —0.1—MHz Gain Flatness in 500--1000MHz Bandwidth @P out =6W Avg.G F — 1.35—dB Gain Variation over Temperature (--30︒C to +85︒C)∆G —0.024—dB/︒C Output Power Variation over Temperature (--30︒C to +85︒C)∆P1dB—0.005—dB/︒CTypical CW Performances —100MHz (In Freescale Test Fixture,50ohm system)V DD =28Vdc,I DQ1=25mA,I DQ2=75mA,P out =11W CW,f =100MHz Power GainG ps —23.5—dB Power Added Efficiency PAE —55—%Input Return LossIRL —--20—dB P out @1dB Compression Point,CWP1dB—11—WTypical CW Performances —400MHz (In Freescale Test Fixture,50ohm system)V DD =28Vdc,I DQ1=25mA,I DQ2=75mA,P out =9W CW,f =400MHz Power GainG ps—22.5—dB Power Added Efficiency PAE —41—%Input Return LossIRL —--17—dB P out @1dB Compression Point,CWP1dB—9—WTypical CW Performances —900MHz (In Freescale Test Fixture,50ohm system)V DD =28Vdc,I DQ1=25mA,I DQ2=75mA,P out =6.5W CW,f =900MHz Power GainG ps —23.5—dB Power Added Efficiency PAE —34—%Input Return LossIRL —--15—dB P out @1dB Compression Point,CWP1dB—6.5—W1.Not recommended for wide instantaneous bandwidth modulated signals.MW7IC008NT15RF Device DataFreescale Semiconductor,Inc.Figure 3.MW7IC008NT1Test Circuit Component LayoutTable 6.MW7IC008NT1Test Circuit Component Designations and ValuesPartDescriptionPart NumberManufacturer C10.01μF Chip Capacitor GRM3195C1E103JA01Murata C2,C150.1μF Chip Capacitors GRM219F51H104ZA01Murata C3,C1610μF Chip Capacitors GRM55DR61H106KA88L Murata C4,C5,C7,C8,C10,C11,C12,C140.01μF Chip Capacitors C0805C103K5RAC Kemet C6,C171μF,35V Tantalum Capacitors TAJA105K035R AVX C9 2.2pF Chip Capacitor ATC600S2R2CT250XT ATC C13 3.3pF Chip CapacitorATC600S3R3BT250XT ATC L1,L7150nH Ceramic Chip Inductors LL2012--FHLR15J Toko L2,L6180nH Ceramic Chip Inductors LL2012--FHLR18J Toko L3 1.6nH Inductor 0603HC--1N6XJLW Coilcraft L4,L5 5.1nH Inductors0603HP--5N1XJLW Coilcraft R1,R12510Ω,1/10W Chip Resistors RR1220P--511--B--T5Susumu R2,R3,R491Ω,1/8W Chip Resistors CRCW080591R0FKEA Vishay R5*,R9*0Ω,2.5A Chip Resistors CRCW08050000Z0EA Vishay R610K Ω,1/8W Chip Resistor CRCW080510K0JNEA Vishay R7,R1112K Ω,1/8W Chip Resistors CRCW080512K0JNEA Vishay R843Ω,1/8W Chip Resistor CRCW080543R0FKEA Vishay R1015K Ω,1/8W Chip Resistor CRCW080515K0JNEA Vishay PCB0.020",εr =3.66RO4350BRogers*Add for temperature compensation6RF Device DataFreescale Semiconductor,Inc.MW7IC008NT1TYPICAL CHARACTERISTICSG p s ,P O W E R G A I N (d B )1000100f,FREQUENCY (MHz)Figure 4.Broadband Performance @P in =14.6dBm CW600400300--307060504030--5--10--15I R L ,I N P U T R E T U R N L O S S (d B )4121086P A E ,P O W E R A D D E D E F F I C I EN C Y (%)500200800700--20--2514P o u t ,O U T P U T P O W E R (W A T T S )900Figure 5.Intermodulation Distortion Productsversus Two--Tone SpacingTWO--TONE SPACING (MHz)10--20--401200I M D ,I N T E R M O D U L A T I O N D I S T O R T I O N (d Bc )--60--30--50--10P out ,OUTPUT POWER (WATTS)CWFigure 6.Power Gain and Power AddedEfficiency versus Output Power18109080706050P A E ,P O W E R A D D E D E F F I C I E N C Y (%)G p s ,P O W E R G A I N (d B )2625402423222120193020100MW7IC008NT17RF Device DataFreescale Semiconductor,Inc.TYPICAL CHARACTERISTICSFigure 7.Broadband Frequency Responsef,FREQUENCY (MHz)200G A I N (d B )4006008001000120014001600-36I R L (d B )8RF Device DataFreescale Semiconductor,Inc.MW7IC008NT1V DD =28Vdc,I DQ1=25mA,I DQ2=75mAP out =11W @100MHz,9W @400MHz,6.5W @900MHz f MHz Z in ΩZ load Ω10049.78+j1.0747.87--j9.8515048.96+j1.4449.12--j5.4420048.00+j1.5449.09--j2.6625046.67+j1.3648.63--j0.7930045.30+j0.9147.73+j0.4935043.93+j0.1146.60+j1.2240042.53--j0.8645.63+j1.4345041.38--j2.1644.97+j1.1350040.30--j3.7145.04+j0.7055039.38--j5.4445.23+j0.7760038.43--j7.1144.80+j1.2965037.94--j8.7144.32+j1.4870037.49--j10.5243.57+j1.5175037.31--j12.4243.19+j1.3280037.00--j14.0342.61+j0.7785036.74--j15.6442.25+j0.3990036.57--j17.0941.90+j0.0395036.37--j18.5941.67--j0.41100036.12--j20.0641.77--j1.10105035.58--j21.4341.82--j1.60110035.00--j22.7941.90--j2.01115034.53--j24.3942.26--j2.43120033.53--j25.9742.51--j2.80125032.67--j27.8442.74--j2.99130031.61--j29.8943.10--j3.11135030.61--j32.3443.52--j3.19140029.55--j34.8143.86--j3.13145028.23--j37.6144.03--j3.03150027.34--j40.5944.33--j2.67Z in=Device input impedance as measured from gate to ground.Z load =Test circuit impedance as measured from drain to ground.Figure 8.Series Equivalent Input and Load ImpedanceZinZloadOutput Matching NetworkMW7IC008NT19RF Device DataFreescale Semiconductor,Inc.PACKAGEDIMENSIONS10RF Device Data Freescale Semiconductor,Inc.MW7IC008NT1MW7IC008NT111RF Device Data Freescale Semiconductor,Inc.12RF Device Data Freescale Semiconductor,Inc.MW7IC008NT1PRODUCT DOCUMENTATION AND SOFTWARERefer to the following documents and software to aid your design process.Application Notes∙AN1955:Thermal Measurement Methodology of RF Power Amplifiers∙AN1977Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family∙AN1987Quiescent Current Control for the RF Integrated Circuit Device FamilyEngineering Bulletins∙EB212:Using Data Sheet Impedances for RF LDMOS DevicesSoftware∙Electromigration MTTF Calculator∙RF High Power Model∙.s2p FileFor Software,do a Part Number search at ,and select the “Part Number”link.Go to the Software &Tools tab on the part’s Product Summary page to download the respective tool.REVISION HISTORYThe following table summarizes revisions to this document.RevisionDate Description 0Aug.2009∙Initial Release of Data Sheet 1Sept.2009∙Modified Fig.3,Test Circuit Component Layout and Table 6,Test Circuit Component Designations andValues to include temperature compensation options,p.5∙Fig.3,Test Circuit Component Layout,corrected V DD1to V GG1,p.5∙Table 6,Test Circuit Component Designations and Values,C6,C17:updated description from “1μF Tantalum Capacitors”to “1μF,35V Tantalum Capacitors”;L1,L7,L2,L6:corrected manufacturer fromCoilcraft to Toko;L3:corrected part number from “0603HC--1N6XJLC”to “0603HC--1N6XJLW”;L4,L5:corrected part number from “100B100JT500XT”to “0603HP--5N1XJLW”;R1,R12:updated descriptionfrom “510ΩChip Resistors”to “510Ω,1/10W Chip Resistors”,p.52Mar.2011∙Updated frequency in overview paragraph from “100to 1000MHz”to “20to 1000MHz”to reflect lower20MHz capability and narrow bandwidth modulation,p.1∙Updated IMD sym Typical value from 180MHz to 0.1MHz and VBW res Typical value from 210MHz to0.1MHz;modified Footnote 1to reflect limited device capability regarding wide video bandwidth,TypicalPerformance table,p.42.1Mar.2012∙Table 3,ESD Protection Characteristics,removed the word “Minimum”after the ESD class rating.ESDratings are characterized during new product development but are not 100%tested during production.ESDratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitivedevices,p.23Dec.2013∙Table 6,Test Circuit Component Designations and Values:updated PCB description to reflect mostcurrent board specifications from Rogers,p.5∙Replaced Case Outline 98ASA10760D,Rev.O with Rev.A,pp.9--11.Mechanical outline drawing modified to reflect the correct lead end features.Format of the mechanical outline was also updated to thecurrent Freescale format for Freescale mechanical outlines.MW7IC008NT113Informationin this document is provided solely to enable system and software implementers to use Freescale products.There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document.Freescale reserves the right to make changes without further notice to any products herein.Freescale makes no warranty,representation,or guarantee regarding the suitability of its products for any particular purpose,nor does Freescale assume any liability arising out of the application or use of any product or circuit,and specifically disclaims any and all liability,including without limitation consequential or incidental damages.“Typical”parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications,and actual performance may vary over time.All operating parameters,including “typicals,”must be validated for each customer application by customer’s technical experts.Freescale does not convey any license under its patent rights nor the rights of others.Freescale sells products pursuant to standard terms and conditions of sale,which can be found at the following address:/SalesTermsandConditions.Freescale and the Freescale logo are trademarks of Freescale Semiconductor,Inc.,Reg.U.S.Pat.&Tm.Off.All other product or service names are the property of their respective owners.E 2009,2011--2013Freescale Semiconductor,Inc.How to Reach Us:Home Page: Web Support:/supportMW7IC008NT1。
