CY7C107-20VC中文资料

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1M x 1 Static RAM CY7C107

CY7C1007

CypressSemiconductorCorporation•3901NorthFirstStreet•SanJose•CA 95134•408-943-2600

December 1992 – Revised September 3, 1999Features

•High speed

—t

AA = 12 ns

•CMOS for optimum speed/power

•Low active power

—825 mW

•Low standby power

—275 mW

•2.0V data retention (optional)

—100 µW

•Automatic power-down when deselected

•TTL-compatible inputs and outputs

Functional Description

The CY7C107 and CY7C1007 are high-performance CMOS

static RAMs organized as 1,048,576 words by 1 bit. Easymemory expansion is provided by an active LOW Chip Enable

(CE) and three-state drivers. These devices have an automatic

power-down feature that reduces power consumption by more

than 65% when deselected.

Writing to the devices is accomplished by taking Chip Enable

(CE) and Write Enable (WE) inputs LOW. Data on the input pin

(D

IN) is written into the memory location specified on the ad-

dress pins (A

0 through A

19).

Reading from the devices is accomplished by taking Chip En-

able (CE) LOW while Write Enable (WE) remains HIGH. Under

these conditions, the contents of the memory location speci-

fied by the address pins will appear on the data output (D

OUT)

pin.

The output pin (D

OUT) is placed in a high-impedance state

when the device is deselected (CE HIGH) or during a write

operation (CE and WE LOW).

The CY7C107 is available in a standard 400-mil-wide SOJ; the

CY7C1007 is available in a standard 300-mil-wide SOJ.

LogicBlockDiagramPinConfiguration

Top ViewSOJ

512x2048

ARRAYA

5

A

6

A

7

COLUMN

DECODERROW DECODER

SENSE AMPS

POWER

DOWN

WECEINPUT BUFFER

D

OUTD

IN

A

4A

3A

2A

1A

01

2

3

4

5

6

7

8

9

10

11

14151620

19

18

172124

23

22

12

132528

27

26

GNDA

11

A

12

A

13

A

14

WEV

CC

A

9A

10

CEA

0D

OUT

D

INA

8

A

7

A

6

A

2

A

1A

4

NCNCA

15

A

16

A

8

A12

A14

A16

A15

A10

A11

A13

A17

A18

A19A

17

A

18

A

19A

5

A

3

A9

107-1107-2

Selection Guide

7C107-12

7C1007-127C107-15

7C1007-157C107-20

7C1007-207C107-25

7C1007-257C107-35

Maximum Access Time (ns)1215202535

Maximum Operating

Current (mA)150135125120110

Maximum Standby

Current (mA)5040303025元器件交易网www.cecb2b.com

CY7C107

CY7C1007

2Maximum Ratings

(Above which the useful life may be impaired. For user guide-

lines, not tested.)

Storage Temperature .....................................−65°C to +150°C

Ambient Temperature with

Power Applied..................................................−55°C to +125°C

Supply Voltage on V

CC Relative to GND[1].....−0.5V to +7.0V

DC Voltage Applied to Outputs

in High Z State[1].......................................−0.5V to V

CC + 0.5V

DC Input Voltage[1]....................................−0.5V to V

CC + 0.5VCurrent into Outputs (LOW).........................................20 mA

Static Discharge Voltage...........................................>2001V

(per MIL-STD-883, Method 3015)

Latch-Up Current.....................................................>200 mA

Notes:

1.V

IL (min.) = –2.0V for pulse durations of less than 20 ns.

2.T

A is the “instant on” case temperature.

3.Not more than 1 output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.Operating Range

RangeAmbient

Temperature[2]V

CC

Commercial0°C to +70°C 5V ± 10%

Industrial−40°C to +85°C 5V ± 10%

Electrical Characteristics Over the Operating Range

ParameterDescriptionTest Conditions7C107-12

7C1007-127C107-15

7C1007-157C107-20

7C1007-20

Min.Max.Min.Max.Min.Max.Unit

V

OHOutput HIGH

VoltageV

CC = Min., I

OH = −4.0 mA2.42.42.4V

V

OLOutput LOW

VoltageV

CC = Min., I

OL = 8.0 mA0.40.40.4V

V

IHInput HIGH

Voltage2.2V

CC+

0.32.2V

CC+

0.32.2V

CC+

0.3V

V

ILInput LOW

Voltage[1]−0.30.8−0.30.8−0.30.8V

I

IXInput Load CurrentGND < V

I < V

CC−1+1−1+1−1+1µA

I

OZOutput Leakage

CurrentGND < V

I < V

CC,

Output Disabled–5+5–5+5–5+5µA

I

OSOutput Short

Circuit Current[3]V

CC = Max., V

OUT = GND−300−300−300mA

I

CCV

CC Operating

Supply CurrentV

CC = Max.,

I

OUT = 0 mA,

f = f

MAX = 1/t

RC150135125mA

I

SB1Automatic CE

Power-Down

Current— TTL InputsMax. V

CC, CE > V

IH,

V

IN >V

IH or V

IN < V

IL,

f = f

MAX504030mA

I

SB2Automatic CE

Power-Down

Current—

CMOS InputsMax. V

CC,

CE > V

CC – 0.3V,

V

IN > V

CC – 0.3V or

V

IN < 0.3V, f = 0222mA元器件交易网www.cecb2b.com