OUTLINE DRAWINGLOT No.0.4+/-0.071230.8 M I N 0.4+/-0.070.5+/-0.071.5+/-0.10.1 MAX1.5+/-0.12.5+/-0.1TYPE NAME1.6+/-0.14.4+/-0.1+0.03-0.05Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm0.43.9+/-0.31.5+/-0.1DESCRIPTIONRD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.FEATURESHigh power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz High Efficiency: 65%typ.APPLICATIONFor output stage of high power amplifiers in VHF/UHF Band mobile radio sets.RoHS COMPLIANTRD01MUS1-101,T113 is a RoHS compliant products.This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions.1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)ABSOLUTE MAXIMUM RATINGS(Tc=25°C UNLESS OTHERWISE NOTED)SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 30 V VGSS Gate to source voltage Vds=0V +/-10 V Pch Channel dissipation Tc =25°C 3.6 W Pin Input Power Zg =Zl =50Ω 60 mW ID Drain Current - 600 mA Tch Channel Temperature - 150 °C Tstg Storage temperature - -40 to +125°CRth j-c Thermal resistance Junction to case 34.5°C/W Note 1: Above parameters are guaranteed independently.ELECTRICAL CHARACTERISTICS(Tc=25°C , UNLESS OTHERWISE NOTED)LIMITS UNITSYMBOL PARAMETERCONDITIONSMIN TYP MAXI DSS Zero gate voltage drain current V DS =17V, V GS =0V - - 50 uA I GSS Gate to source leak current V GS =10V, V DS =0V - - 1 uA Vth Gate threshold Voltage V DS =12V, I DS 1mA 1 1.8 3 V Pout Output power V DD =7.2V, Pin=30mW 0.8 1.4 - WηDDrain efficiency f=520MHz,Idq=100mA 50 65 - % Note : Above parameters , ratings , limits and conditions are subject to change.TYPICAL CHARACTERISTICSTYPICAL CHARACTERISTICSTEST CIRCUIT(f=520MHz)Micro strip line width=1.0mm/50OHM,er:4.8,t=0.6mmNote:Board material-glass epoxi substrateC1,C2: 1000pF,0.022uF in parallelL1: Enameled wire 5Turns,D:0.43mm,2.46mmO.D VggVddRF-ININPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS520MHz Zin* Zout* Zo=50ΩVdd=7.2V, Idq=100mA(Vgg adj.),Pin=0.03WZin* =3.11+j11.56 Zout*=11.64+j4.74Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance520MHz Zin*520MHz Zout*。
TOSHIBA CMOS Digital Integrated Circuit Silicon MonolithicTC7USB221FTDual SPDT USB SwitchTC7USB221 is high-speed CMOS dual 1-2 multiplexer /demultiplexer. The low on resistance and the low capacitance of the switch allow connections to USB application.This device consists of dual individual two-inputs multiplexer/demultiplexer with common select input (S) and output enable (OE ). The D+/D- inputs is connected to the D1+/D1- or D2+/D2- outputs determined by the combination both the select input (S) and output enable (OE ). When the output enable (OE ) input is held “H” level, the switches are open with regardless the state of select inputs and a high-impedance state exists between the switches.All inputs are equipped with protection circuits against static discharge.Features• Operating voltage:V CC = 2.3 to 3.6 V• ON-capacitance: C I/O = 7 pF Switch ON (typ.) @V CC =3.3 V • ON-resistance: R ON = 6.5 Ω (typ.) @ V CC =3 V, V I/O =0 V • R ON Flatness: R ON(flat) = 1.6 Ω (typ.) @ V CC =3 V • Delta R ON : ΔR ON = 0.5 Ω (typ.) @ V CC =3 V • ESD performance: Machine model ≥ ± 200 VHuman body model ≥ ± 2000 V• Power-down protection for inputs (OE and S, I/O) • Package: TSSOP14Pin Assignment (top view)TC7USB221FTWeightTSSOP14-P-0044-0.65A: 0.06 g (typ.)FT (TSSOP14-P-0044-0.65A)V CC 9 814 13 12 11 10 1234567GNDNC NCNC 1D −2D −2D +D + SNC 1D +D − OETruth TableSystem DiagramD1D＋2D＋D1D－2D－OEAbsolute Maximum Ratings (Note)Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).Operating Ranges (Note)Note: The operating ranges must be maintained to ensure the normal operation of the device.Unused inputs must be tied to either V CC or GND.Electrical CharacteristicsDC Characteristics (Ta =−40 to 85°C)Note1: All typical values are at Ta = 25°C.Note2: Measured by the voltage drop between D+/D- and 1D+/1D-, 2D+/2D- pins at the indicated current through the switch. ON resistance is determined by the lower of the voltages on the two pins.AC Characteristics V CC=3.3V±10% (Ta =−40 to 85°C)Note: This parameter is guaranteed by design.Capacitive Characteristics (Ta = 25°C)Note: This parameter is guaranteed by design.AC Test Circuit Load/WaveformFigure 1 : Propagation Delay Time (t pLH , t pHL )V OLV OH0.4 V0.8 VInput (D+, D-)OutputOutputFigure 2 : Turn ON/Turn OFF (t ON , t OFF )OutputV OLV OH 0 V1.8 VInput(S or OE )OutputFigure 3 : Break Before Make (TBBM)V OLV OH 0 V V CC Input (S)Output (D+, D-)PULSE SKEW t SK(P) = |t pLH - t pHL |V OLV OH0.4 V0.8 VInput (D+, D-)OutputOutputOUTPUT SKEW t SK(O) = |t pLH(+) - t pLH(-)| or |t pHL(+) - t pHL(-)|Figure 4 : Skew of Opposite Transitions of the same output, Output skewV OLV OH0.4 V0.8 VInput(D+, D-)Output(+) (1D+ or 2D+)V OLOutput(-) (1D- or 2D-)V OHFigure 5 : Channel OFF IsolationFigure 6 : CrosstalkFigure 7 : -3dB BandwidthFigure 8 : ON ResistanceFigure 9 : Power off Leakage Current Figure 10 : Off-State Leakage current分销商库存信息: TOSHIBATC7USB221FT(EL,M)。
