MMST2222A-7-F中文资料

UMT2222A,SST2222A,
MMST2222A
Collector power
dissipation
SST2222A
PC
PN2222A
Junction temperature
Tj
Storage temperature
Tstg
∗ When mounted on a 7 x 5 x 0.6 mm ceramic board
1000 100
Ta=125°C 25°C
−55°C
VCE=10V
10 0.1
1.0
10
100
COLLECTOR CURRENT : Ic(mA)
1000
Fig.4 DC current gain vs. collector current(ΙΙ)
AC CURRENT GAIN : hFE
1000 100
2.3
(1) Emitter (2) Base (3) Collector
!Electrical characteristics (Ta = 25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage
MMST2222A
2.0±0.2 1.3±0.1 0.65 0.65 (1) (2)
0.9±0.1 0.2 0.7±0.1
1.25±0.1 2.1±0.1 0.1 ∼ 0.4

ON CHARACTERISTICS
hFE DC Current Gain IC = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V* IC = 150 mA, VCE = 1.0 V* IC = 500 mA, VCE = 10 V* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 35 50 75 100 50 40
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6 Vtf=1.7 Xtf=3 Rb=10)
Thermal Characteristics
Symbol
PD RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die FFB2222A 300 2.4 415

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTORFeatures• Epitaxial Planar Die Construction• Complementary PNP Type Available (MMBT2907A)• Ideal for Low Power Amplification and Switching• Lead, Halogen and Antimony Free, RoHS Compliant (Note 2)• “Green” Device (Note 3)• Qualified to AEC-Q101 Standards for High Reliability Mechanical Data• Case: SOT-23• Case Material: Molded Plastic, “Green” Molding Compound, Note 5. UL Flammability Classification Rating 94V-0• Moisture Sensitivity: Level 1 per J-STD-020D• Terminals: Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram• Marking Information: See Page 4• Ordering Information: See Page 4• Weight: 0.008 grams (approximate)EBCTop View Device SchematicMaximum Ratings@T A = 25°C unless otherwise specifiedCharacteristic Symbol Value Unit Collector-Base Voltage V CBO75 VCollector-Emitter Voltage V CEO40 VEmitter-Base Voltage V EBO 6.0 VCollector Current - Continuous I C600 mAPeak Collector Current I CM800 mAThermal CharacteristicsCharacteristic Symbol Value UnitPower Dissipation (Note 1) P D300 mWThermal Resistance, Junction to Ambient (Note 1) RθJA417 °C/W Operating and Storage Temperature Range T J, T STG-55 to +150 °CNotes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at /datasheets/ap02001.pdf.2. No purposefully added lead. Halogen and Antimony Free.3. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to DateCode V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.Please click here to visit our online spice models database.Electrical Characteristics @T A = 25°C unless otherwise specifiedCharacteristic (Note 4)Symbol Min Max Unit Test ConditionOFF CHARACTERISTICSCollector-Base Breakdown Voltage V (BR)CBO 75 ⎯ V I C = 10μA, I E = 0 Collector-Emitter Breakdown Voltage V (BR)CEO 40 ⎯ V I C = 10mA, I B= 0 Emitter-Base Breakdown Voltage V (BR)EBO 6.0 ⎯ V I E = 10μA, I C = 0 Collector Cutoff CurrentI CBO ⎯ 10 nA μA V CB = 60V, I E = 0V CB = 60V, I E = 0, T A = 150°C Collector Cutoff Current I CEX ⎯ 10 nA V CE = 60V, V EB(OFF) = 3.0V Emitter Cutoff Current I EBO ⎯ 10 nA V EB = 3.0V, I C = 0Base Cutoff CurrentI BL⎯ 20 nAV CE = 60V, V EB(OFF) = 3.0V ON CHARACTERISTICS (Note 4)DC Current Gain h FE 35 50 75 100 40 50 35 ⎯ ⎯ ⎯ 300 ⎯ ⎯ ⎯ ⎯I C = 100μA, V CE = 10V I C = 1.0mA, V CE = 10V I C = 10mA, V CE = 10V I C = 150mA, V CE = 10V I C = 500mA, V CE = 10VI C = 10mA, V CE = 10V, T A = -55°C I C = 150mA, V CE = 1.0V Collector-Emitter Saturation Voltage V CE(SAT) ⎯ 0.3 1.0 V I C = 150mA, I B = 15mA I C = 500mA, I B = 50mA Base-Emitter Saturation Voltage V BE(SAT) 0.6 ⎯ 1.2 2.0 V I C = 150mA, I B = 15mA I C = 500mA, I B = 50mA SMALL SIGNAL CHARACTERISTICS Output Capacitance C obo ⎯ 8 pF V CB = 10V, f = 1.0MHz, I E = 0 Input CapacitanceC ibo — 25 pF V EB = 0.5V, f = 1.0MHz, I C = 0 Current Gain-Bandwidth Product f T 300 ⎯ MHz V CE = 20V, I C = 20mA, f = 100MHzNoise FigureNF⎯4.0dBV CE = 10V, I C = 100μA, R S = 1.0k Ω, f = 1.0kHzSWITCHING CHARACTERISTICS Delay Time t d ⎯ 10 ns V CC = 30V, I C = 150mA, V BE(off) = - 0.5V, I B1 = 15mARise Time t r ⎯ 25 ns V CC = 3.0V, I C = 150mA, I B1 = 15mA, V BE(OFF) = 0.5VStorage Time t s ⎯ 225 ns V CC = 30V, I C = 150mA, I B1 = I B2 = 15mAFall Timet f⎯60nsV CC = 30V, I C = 150mA, I B1 = I B2 = 15mANotes: 4. Short duration pulse test used to minimize self-heating effect.P , P O W E R D I S S I P A T I O N (m W )D T , AMBIENT TEMPERATURE (°C)Fig. 1 Power Dissipation vs. Ambient Temperature A 250h , D C C U R R E N T G A I NF E I , COLLECTOR CURRENT (mA)Fig. 2 Typical DC Current Gain vs. Collector Current CV , B A S E -E M I T T E R T U R N -O N V O L T A G E (V )B E (O N )I , COLLECTOR CURRENT (mA)Fig. 4 Base-Emitter Turn-On Voltagevs. Collector CurrentCV , C O L L E C T O R -E M I T T E RS A T U R A T I O N V O L T A G E (V )C E (S A T )I , COLLECTOR CURRENT (mA)Fig. 3 Typical Collector-Emitter Saturation Voltagevs. Collector Current C0.40.5C A P A C I T A N C E (p F )V , REVERSE VOLTS (V)Fig. 5 Typical Capacitance Characteristics RI , COLLECTOR CURRENT (mA)Fig. 6 Typical Gain Bandwidth Productvs. Collector CurrentC f , G A I N B A ND W I D T H P R O D U C T (M H z )T1.0I , BASE CURRENT (mA)Fig. 7 Typical Collector Saturation Region B V , C O L L E C T O R -E M I T T E R V O L T A G E (V )C EOrdering Information (Note 5)Part Number Case Packaging MMBT2222A-7-FSOT-23 3000/Tape & ReelNotes:5. For packaging details, go to our website at /datasheets/ap02007.pdf.Marking InformationK1PY MK1P = Product Type Marking CodeYM = Date Code Marking Y = Year (ex: N = 2002)M = Month (ex: 9 = September)Date Code KeyYear 1998 1999 2000 2001 2002 20032004200520062007200820092010 2011 2012 201320142015 Code J K L M N PR STUVWX Y Z A B CMonth Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov DecCode 1 2 3 4 5 6 7 8 9 O N DPackage Outline DimensionsSuggested Pad LayoutIMPORTANT NOTICEDiodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,harmless against all damages.LIFE SUPPORTDiodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.SOT-23Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.0130.10 0.05 K 0.903 1.10 1.00 K1 - - 0.400 L 0.45 0.61 0.55 M 0.0850.18 0.110° 8° - αAll Dimensions in mmX EYCZDimensions Value (in mm)Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35分销商库存信息:DIODESMMBT2222A-7-F MMBT2222A-7。

PN2222ASMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAs SILICON EPITAXIAL PLANAR NPNTRANSISTORs TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY sTHE PNP COMPLEMENTARY TYPE IS PN2907AAPPLICATIONS s WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENTs SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGEFebruary 2003ABSOLUTE MAXIMUM RATINGS®1/6l e t e P r o d u c t (s ) - O b s o l e t e P r o d u c t (s ) -PN2222ATHERMAL DATAELECTRICAL CHARACTERISTICS (T case = 25 o C unless otherwise specified)Ob s o l e t e P r o d uc t (s ) - O b s o l e t e P r od u c t (s ) ELECTRICAL CHARACTERISTICS(Continued)PN2222AO b s o l e t e P r o d u c t (s ) - O b s o l e t e P r o d u c t (s )PN2222APN2222AOb s o l e t e P r o d uc t (s ) - O b s o l e t e P r od u c t (s ) Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics© 2003 STMicroelectronics – Printed in Italy – All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.PN2222AO b s o l e t e P r o d u c t (s ) - O b s o l e t e P r o d u c t (s )分销商库存信息: STMPN2222A。