MM74HC11中文资料
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TL F 5298MM54HC11 MM74HC11 Triple 3-Input AND GateJanuary1988 MM54HC11 MM74HC11Triple3-Input AND GateGeneral DescriptionThese AND gates utilize advanced silicon-gate CMOS tech-nology to achieve operating speeds similar to LS-TTL gateswith the low power consumption of standard CMOS inte-grated circuits All gates have buffered outputs providinghigh noise immunity and the ability to drive10LS-TTL loadsThe54HC 74HC logic family is functionally as well as pin-out compatible with the standard54LS 74LS logic familyAll inputs are protected from damage due to static dis-charge by internal diode clamps to V CC and groundFeaturesY Typical propagation delay 12nsY Wide power supply range 2–6VY Low quiescent current 20m A maximum(74HC Series)Y Low input current 1m A maximumY Fanout of10LS-TTL loadsConnection and Logic DiagramsDual-In-Line PackageTL F 5298–1Top ViewOrder Number MM54HC11or MM74HC11TL F 5298–2(1OF3GATES)C1995National Semiconductor Corporation RRD-B30M105 Printed in U S AAbsolute Maximum Ratings(Notes1 2) If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Supply Voltage(V CC)b0 5to a7 0V DC Input Voltage(V IN)b1 5to V CC a1 5V DC Output Voltage(V OUT)b0 5to V CC a0 5V Clamp Diode Current(I IK I OK)g20mA DC Output Current per pin(I OUT)g25mA DC V CC or GND Current per pin(I CC)g50mA Storage Temperature Range(T STG)b65 C to a150 C Power Dissipation(P D)(Note3)600mW S O Package only500mW Lead Temperature(T L)(Soldering10seconds)260 C Operating ConditionsMin Max Units Supply Voltage(V CC)26V DC Input or Output Voltage0V CC V (V IN V OUT)Operating Temp Range(T A)MM74HC b40a85 C MM54HC b55a125 C Input Rise or Fall TimesV CC e2 0V(t r t f)1000ns V CC e4 5V500nsV CC e6 0V400nsDC Electrical Characteristics(Note4)T A e25 C 74HC54HCSymbol Parameter Conditions V CC T A eb40to85 C T A eb55to125 C UnitsTyp Guaranteed LimitsV IH Minimum High Level2 0V1 51 51 5V Input Voltage4 5V3 153 153 15V6 0V4 24 24 2VV IL Maximum Low Level2 0V0 50 50 5V Input Voltage 4 5V1 351 351 35V6 0V1 81 81 8VV OH Minimum High Level V IN e V IHOutput Voltage l I OUT l s20m A2 0V2 01 91 91 9V4 5V4 54 44 44 4V6 0V6 05 95 95 9VV IN e V IHl I OUT l s4 0mA4 5V4 23 983 843 7Vl I OUT l s5 2mA6 0V5 75 485 345 2V V OL Maximum Low Level V IN e V IH or V ILOutput Voltage l I OUT l s20m A2 0V00 10 10 1V4 5V00 10 10 1V6 0V00 10 10 1VV IN e V IH or V ILl I OUT l s4 0mA4 5V0 20 260 330 4Vl I OUT l s5 2mA6 0V0 20 260 330 4V I IN Maximum Input V IN e V CC or GND6 0V g0 1g1 0g1 0m ACurrentI CC Maximum Quiescent V IN e V CC or GND6 0V2 02040m ASupply Current I OUT e0m ANote1 Absolute Maximum Ratings are those values beyond which damage to the device may occurNote2 Unless otherwise specified all voltages are referenced to groundNote3 Power Dissipation temperature derating plastic‘‘N’’package b12mW C from65 C to85 C ceramic‘‘J’’package b12mW C from100 C to125 C Note4 For a power supply of5V g10%the worst case output voltages(V OH and V OL)occur for HC at4 5V Thus the4 5V values should be used when designing with this supply Worst case V IH and V IL occur at V CC e5 5V and4 5V respectively (The V IH value at5 5V is3 85V )The worst case leakage current(I IN I CC and I OZ)occur for CMOS at the higher voltage and so the6 0V values should be usedV IL limits are currently tested at20%of V CC The above V IL specification(30%of V CC)will be implemented no later than Q1 CY’892AC Electrical Characteristics V CC e5V T A e25 C C L e15pF t r e t f e6nsSymbol Parameter Conditions Typ GuaranteedUnits Limitt PHL t PLH Maximum Propagation1220ns DelayAC Electrical CharacteristicsV CC e2 0V to6 0V C L e50pF t r e t f e6ns(unless otherwise specified)T A e25 C 74HC54HCSymbol Parameter Conditions V CC T A eb40to85 C T A eb55to125 C UnitsTyp Guaranteed Limitst PHL t PLH Maximum Propagation2 0V48125156190ns Delay4 5V18253138ns6 0V15212731nst TLH t THL Maximum Output Rise2 0V307595110ns and Fall Time4 5V8151922ns6 0V7131619nsC PD Power Dissipation(per gate)35pFCapacitance(Note5)C IN Maximum Input5101010pFCapacitanceNote5 C PD determines the no load dynamic power consumption P D e C PD V CC2f a I CC V CC and the no load dynamic current consumption I S e C PD V CC f a I CC3M M 54H C 11 M M 74H C 11T r i p l e 3-I n p u t A N D G a t ePhysical Dimensions inches (millimeters)Dual-In Line Package (J)Order Number MM54HC11J or MM74HC11JSee NS Package J14ADual-In Line Package (N)Order Number MM74HC11N See NS Package N14ALIFE SUPPORT POLICYNATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or 2 A critical component is any component of a life systems which (a)are intended for surgical implant support device or system whose failure to perform can into the body or (b)support or sustain life and whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system or to affect its safety or with instructions for use provided in the labeling can effectivenessbe reasonably expected to result in a significant injury to the userNational Semiconductor National Semiconductor National Semiconductor National Semiconductor CorporationEuropeHong Kong LtdJapan Ltd1111West Bardin RoadFax (a 49)0-180-530858613th Floor Straight Block Tel 81-043-299-2309This datasheet has been download from: Datasheets for electronics components.。
