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MMBFJ112中文资料

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r DS - NORMALIZED RESISTANCE 100 50 20 10 5 2 0 0.2 0.4 0.6 0.8 1 VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V) 1
V GS(off) @ 5.0V, 10 µA
125°C
50
25°C 125°C - 55°C V GS(off) TYP = - 7.0V
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)GSS IGSS VGS(off) Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage I G = - 1.0 µA, VDS = 0 VGS = - 15 V, VDS = 0 VDS = 5.0 V, ID = 1.0 µA J111 J112 J113 - 3.0 - 1.0 - 0.5 - 35 - 1.0 - 10 - 5.0 - 3.0 1.0 V nA V V V nA
20
4
- 0.8 V - 1.0 V
D
2
- 1.4 V - 1.2 V
10
I DSS
10
I
0
0
0.4 0.8 1.2 1.6 V DS - DRAIN-SOURCE VOLTAGE (V)
2
5 _
0.5
_ _ 1 2 5 V GS (OFF) - GATE CUTOFF VOLTAGE (V)
_
5 10
r
g fs - TRANSCONDUCTANCE (mmhos) 100
r DS
TA = 25°C TYP V GS(off) = - 2.0 V
100
DS
- DRAIN "ON" RESISTANCE (Ω) Ω
8
- 0.4 V
50
50
6
- 0.6 V
20
g
fs I DSS , g fs @ V DS = 15V, V GS = 0 PULSED r DS @ 1.0 mA, V GS = 0 V GS(off) @ V DS = 15V, I D = 1.0 nA _
元器件交易网
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113
N-Channel Switch
(continued)
Typical Characteristics
(continued)
Transfer Characteristics
ID(off)
Gate-Source Cutoff Voltage
VDS = 5.0 V, VGS = - 10 V
ON CHARACTERISTICS
IDSS Zero-Gate Voltage Drain Current* VDS = 15 V, IGS = 0 VDS ≤ 0.1 V, VGS = 0 J111 J112 J113 J111 J112 J113 20 5.0 2.0 30 50 100 mA mA mA Ω Ω Ω
25°C 125°C VGS(off) = - 2.0 V
12
20
125°C 25°C - 55°C
8
V GS(off) = - 1.1 V 125°C 25°C - 55°C
10
V
DS
= 15 V
4
0
0
-1 -2 -3 VGS - GATE-SOURCE VOLTAGE (V)
0
0
-0.5 -1 -1.5 VGS - GATE-SOURCE VOLTAGE (V)
- TRANSCONDUCTANCE (mmhos)
Transfer Characteristics
- TRANSCONDUCTANCE (mmhos) 30
VGS(off) = - 3.0 V - 55°C 25°C 125°C
Transfer Characteristics
30
V GS(off) = - 1.6 V - 55°C
元器件交易网
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113
Discrete POWER & Signal Technologies
J111 J112 J113
MMBFJ111 MMBFJ112 MMBFJ113
G
D G S
40 I D - DRAIN CURRENT (mA)
VGS(off) = - 3.0 V - 55°C
Transfer Characteristics
16 I D - DRAIN CURRENT (mA)
VGS(off) = - 1.6 V - 55°C 25°C 125°C
V
DS
= 15 V
30
10
Capacitance vs Voltage
100
Noise Voltage vs Frequency
100 e n - NOISE VOLTAGE (nV / Hz) 50
√
C is (C rs ) - CAPACITANCE (pF)
V DG = 15V BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.21 @ f ≥ 1.0 kHz
N-Channel Switch
(continued)
Typical Characteristics
(continued)
100
TA = 25°C V DG = 15V f = 1.0 kHz
g os - OUTPUT CONDUCTANCE ( µ mhos)
g fs - TRANSCONDUCTANCE (mmhos)
f = 0.1 - 1.0 MHz
10
10 5
I D = 10 mA I D = 1.0 mA
C is (V DS = 0) C is (VDS = 20) C rs (V DS = 0)
1
0
-4 -8 -12 -16 V GS - GATE-SOURCE VOLTAGE (V)
-20
1 0.01
1 10 f - FREQUENCY (kHz)
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 3.0%
Typical Characteristics
Common Drain-Source
10 - DRAIN CURRENT (mA) V GS = 0 V
- 0.2 V
Parameter Interactions
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient J111- J113 350 2.8 125 357
Value
35 - 35 50 -55 to +150
Units
V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113
N-Channel Switch
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unleΒιβλιοθήκη s otherwise noted
-3
g
0
fs
0
0
-0.5 -1 -1.5 VGS - GATE-SOURCE VOLTAGE (V)
Ω r DS - DRAIN "ON" RESISTANCE (Ω )
On Resistance vs Drain Current
100
V GS(off) TYP = - 2.0V
Normalized Drain Resistance vs Bias Voltage
TO-92
D
SOT-23
Mark: 6P / 6R / 6S
S
N-Channel Switch
This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51.

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MMUN2212中文资料

MMUN2212中文资料

∞ ∞
WEITRON

1/10
Rev.A 30-Dec-05
元器件交易网
MMUN2211 Series
ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
Junction and Storage, Temperature
1. FR-4 @ minimun pad
Symbol
PD
R θJA TJ,Tstg
Value
246 1.6 625
-65 to +150
Unit
mW mW / ℃ ℃/W
℃
Device Marking and Resistor Values
Vin, INPUT VOLTAGE (VOL TS)
-
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0 %.
WEITRON
Typ Max Unit
-
100
nAdc
-
500
nAdc
-
mAdc 0.5
-
0.2
-
0.1
-
0.2
-
0.9
-
1.9
-
4.3
-
2.3
-
1.5
-
0.18
-
0.13
-
0.2
-
4.0
Characteristic
Symbol Min
OFF CHARACTERISTICS
Collector-Base Cutof f Current (VCB= 50 V, IE = 0)
TFS112F中文资料

TFS112F中文资料

______________________________________________________________________________________________________ VI TELEFILTER Vectron International, Inc. Potsdamer Straße 18 267 Lowell Road D 14 513 TELTOW / Germany Hudson, NH 03051 / USA Tel: (+49) 3328 4784-52 / Fax: (+49) 3328 4784-30 Tel: (603) 598-0070 Fax: (603) 598-0075Measurement condition Ambient temperature: 23 °C Input power level: 10 dBmTerminating impedances for input: 800 Ω || -12,0 pF for output: 1,1 k Ω || -12,2 pFCharacteristicsRemark:Reference level for the relative attenuation a rel of the TFS 112 F is the minimum of the pass band attenuation a min . The minimum of the pass band attenuation a min is defined as the insertion loss a e . The reference frequency f c is the arithmetic mean value of the upper and lower frequencies at the 30 dB filter attenuation level relative to the insertion loss a e .D a t atyp. value tolerance / limit____________________________________________________________________________________________________Insertion loss a e = a min - 14,0 dB(reference level)____________________________________________________________________________________________________ Reference frequency f c (30 dB-BW) 112,32 MHz ± 60 kHz____________________________________________________________________________________________________1.5 dB bandwidth BW min. 360 kHz3 dB bandwidthBW min. 500 kHz____________________________________________________________________________________________________Relative attenuationa rel f c ± 800 kHz f c ± 1.6 MHz - 30 dB f c ± 1.6 MHz f c ± 10 MHz - 40 dB____________________________________________________________________________________________________ Group delayGD Ripple f c ± 150 kHz max 300 ns____________________________________________________________________________________________________Operating temperature range0 °C ... + 70 °C Storage temperature range- 45 °C ... + 85 °C ____________________________________________________________________________________________________ Input power level - max. + 10 dBm____________________________________________________________________________________________________ Permissible DC voltage V DC -12 V Permissible AC voltage V pp -10 V ____________________________________________________________________________________________________ Temperature coefficient of frequencyTC f *) - 0,036pm/K² - ______________________________________________________________________________________________________ Frequency inversion temperature T o 5°C______________________________________________________________________________________________________*) ∆f(Hz) = TC f (ppm/K²) x (∆T)² x f To (MHz)Generated:Checked / approved:______________________________________________________________________________________________________ VI TELEFILTER Vectron International, Inc. Potsdamer Straße 18 267 Lowell Road D 14 513 TELTOW / Germany Hudson, NH 03051 / USA Tel: (+49) 3328 4784-52 / Fax: (+49) 3328 4784-30 Tel: (603) 598-0070 Fax: (603) 598-0075Construction, pin connection and 50 Ω - matching network(All dimensions in mm)TFS112F tft L9______________________________________________________________________________________________________ VI TELEFILTER Vectron International, Inc. Potsdamer Straße 18 267 Lowell Road D 14 513 TELTOW / Germany Hudson, NH 03051 / USA Tel: (+49) 3328 4784-52 / Fax: (+49) 3328 4784-30 Tel: (603) 598-0070 Fax: (603) 598-0075Stability characteristicsAfter the following tests the filter shall meet the whole specification:1. Shock: 500g, 18 ms, half sine wave, 3 shocks each plane;DIN IEC 68 T2 - 272. Vibration: 10 Hz to 500 Hz, 0,35 mm or 5g respectively, 1 octave per min, 10 cycles per plan, 3 plans;DIN IEC 68 T2 - 63. Damp heat: 25 °C to 55°C / 95% r.H. / 10 cycles (cycle)DIN IEC 68 - 2 – 30 Db4. Resistance tosolder heat (reflow): max. 2 times reflow process;for temperature conditions refer to the attached "Air reflow temperature conditions" on page 4;PackingTape & Reel: IEC 286 - 3, with exception of value for N and minimum bending radius; tape type II , embossed carrier tape with top cover tape on the upper side;max. pieces of filters per reel: 1700Real of empty components at start: min 300 mm Real of empty components at start including leader:min 500 mmTrailermin 300 mmCOVER TAPETape (all dimensions in mm)W : 24 ± 0,3Po : 4 ± 0,1Do : 1,5 + 0,1 E : 1,75 ± 0,1F : 11,5 ± 0,1G (min) : 0,6P2 : 2 ± 0,1P1 : 12 ± 0,1D1(min) : 1,5Ao : 7,1 ± 0,2Bo : 13,9 ± 0,2D1 : 1,5 + 0,1NW 1W 2Reel (all dimensions in mm):A : 330W1 : 24,4 +2W2 (max) : 30,4N (min) : >= 60C : 13 + 0,5- 0,2The minimum bending radius is 45 mm. The mounting surface of the filters faces the bottom side of the embossed carrier tape. The marking of the filters is able to read if the view is directed on the upper side of the carrier tape with the sprocket holes on the right side of the tap______________________________________________________________________________________________________VI TELEFILTER Vectron International Inc. Potsdamer Straße 18 267 Lowell Road D 14 513 TELTOW / Germany Hudson, NH 03051 / USA Tel: (+49) 3328 4784-52 / Fax: (+49) 3328 4784-30 Tel: (603) 598-0070 Fax: (603) 598-0075 E-Mail: tft@ E-Mail: vti@VI TELEFILTER reserves the right to make changes to the product(s) and/or information contained herein without notice. No liability isAir reflow temperature conditions1st and 2nd air reflow profileName:pre-heating periods main-heating periods peak temperature Temperature: 150 °C - 170 °C over 200 °C 255 °C ± 5 °CTime:60 sec. - 90 sec.20 sec. - 25 sec.Tolerance of temperatures: ± 5 °C time / sec. temperature / °C time / sec. temperature / °C 0 23 140 160 10 34 150 161 20 46 160 164 30 60 170 170 40 80 180 180 50 103 190 205 60 121 195 230 70 134 200 255 80 143 205 230 90 150 210 205 100 154 215 180 110 156 220 165 120 158 230 140 130 159 240 120。

PGA112资料

PGA112资料

0.3% max (G > 32)
• Binary Gains: 1, 2, 4, 8, 16, 32, 64, 128 (PGA112, PGA116)
• Scope Gains: 1, 2, 5, 10, 20, 50, 100, 200 (PGA113, PGA117)
• Gain Switching Time: 200ns • Two Channel MUX: PGA112, PGA113
DESCRIPTION
The PGA112 and PGA113 (binary/scope gains) offer two analog inputs, a three-pin SPI interface, and software shutdown in an MSOP-10 package. The PGA116 and PGA117 (binary/scope gains) offer 10 analog inputs, a four-pin SPI interface with daisy-chain capability, and hardware and software shutdown in a TSSOP-20 package.
PACKAGE-LEAD MSOP-10 MSOP-10 TSSOP-20 TSSOP-20
PACKAGE DESIGNATOR
DGS DGS PW PW
PACKAGE MARKING
P112 P113 PGA116 PGA117
(1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI web site at .
MMBFJ113;中文规格书,Datasheet资料

MMBFJ113;中文规格书,Datasheet资料

r
- TRANSCONDUCTANCE (mmhos) 100
r DS
T A = 25°C TYP V GS(off) = - 2.0 V
100
DS
- DRAIN "ON" RESISTANCE (Ω)
8
- 0.4 V
50
50
6
- 0.6 V
20
g
fs I DSS , g fs @ V DS = 15V, V GS = 0 PULSED r DS @ 1.0 mA, V GS = 0 V GS(off) @ V DS = 15V, I D = 1.0 nA _
Features
• This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from Process 51. • Source & Drain are interchangeable.

/
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 — N-Channel Switch
Electrical Characteristics
Symbol
Off Characteristics
Ta = 25°C unless otherwise noted
Parameter
Test Condition
Min.
-35
Typ.
Max.
Units
V
BV(BR)GSS Gate-Source Breakdown Voltage IG = -1.0A, VDS = 0 IGSS VGS(off) Gate Reverse Current Gate-Source Cutoff Voltage VGS = -15V, VDS = 0 VDS = 5.0V, ID = 1.0A 111 112 MMBFJ112_SB51338 113