74HC595完整中文资料

描述74HC59574HC595是硅结构的CMOS器件，兼容低电压TTL电路，遵守JEDEC标准。

74HC595是具有8位移位寄存器和一个存储器，三态输出功能。

移位寄存器和存储器是分别的时钟。

数据在SHcp的上升沿输入，在STcp的上升沿进入的存储寄存器中去。

如果两个时钟连在一起，则移位寄存器总是比存储寄存器早一个脉冲。

移位寄存器有一个串行移位输入（Ds），和一个串行输出（Q7’）,和一个异步的低电平复位，存储寄存器有一个并行8位的，具备三态的总线输出，当使能OE时（为低电平），存储寄存器的数据输出到总线。

8位串行输入/输出或者并行输出移位寄存器，具有高阻关断状态。

三态。

[编辑本段]特点8位串行输入/8位串行或并行输出存储状态寄存器，三种状态输出寄存器可以直接清除100MHz的移位频率[编辑本段]输出能力并行输出，总线驱动；串行输出；标准中等规模集成电路595移位寄存器有一个串行移位输入（Ds），和一个串行输出（Q7’）,和一个异步的低电平复位，存储寄存器有一个并行8位的，具备三态的总线输出，当使能OE时（为低电平），存储寄存器的数据输出到总线。

[编辑本段]参考数据CPD决定动态的能耗，PD＝CPD×VCC×f1+∑(CL×VCC2×f0) F1＝输入频率，CL＝输出电容f0＝输出频率（MHz）Vcc=电源电压[编辑本段]引脚说明符号引脚描述Q0…Q7 15，1，7 并行数据输出GND 8 地Q7’ 9 串行数据输出MR 10 主复位（低电平）SHCP 11 移位寄存器时钟输入STCP 12 存储寄存器时钟输入OE 13 输出有效（低电平）DS 14 串行数据输入VCC 16 电源[编辑本段]功能表输入输出功能SHCP STCP OE MR DS Q7’ Qn × × L ↓ × L NC MR为低电平时仅仅影响移位寄存器× ↑ L L × L L 空移位寄存器到输出寄存器×× H L × L Z 清空移位寄存器，并行输出为高阻状态↑ × L H H Q6 NC 逻辑高电平移入移位寄存器状态0，包含所有的移位寄存器状态移入，例如，以前的状态6（内部Q6”）出现在串行输出位。

74hc595的引脚功能和作用描述74HC59574HC595是硅结构的CMOS器件，兼容低电压TTL电路，遵守JEDEC标准。

74HC595是具有8位移位寄存器和一个存储器，三态输出功能。

移位寄存器和存储器是分别的时钟。

数据在SHcp 的上升沿输入，在STcp的上升沿进入的存储寄存器中去。

如果两个时钟连在一起，则移位寄存器总是比存储寄存器早一个脉冲。

移位寄存器有一个串行移位输入（Ds），和一个串行输出（Q7’）,和一个异步的低电平复位，存储寄存器有一个并行8位的，具备三态的总线输出，当使能OE时（为低电平），存储寄存器的数据输出到总线。

8位串行输入/输出或者并行输出移位寄存器，具有高阻关断状态。

三态。

[编辑本段]特点8位串行输入/8位串行或并行输出存储状态寄存器，三种状态输出寄存器可以直接清除100MHz的移位频率[编辑本段]输出能力并行输出，总线驱动；串行输出；标准中等规模集成电路595移位寄存器有一个串行移位输入（Ds），和一个串行输出（Q7’）,和一个异步的低电平复位，存储寄存器有一个并行8位的，具备三态的总线输出，当使能OE时（为低电平），存储寄存器的数据输出到总线。

[编辑本段]参考数据CPD决定动态的能耗，PD＝CPD×VCC×f1+∑(CL×VCC2×f0) F1＝输入频率，CL＝输出电容f0＝输出频率（MHz）Vcc=电源电压[编辑本段]引脚说明符号引脚描述Q0…Q7 15，1，7 并行数据输出GND 8 地Q7’9 串行数据输出MR 10 主复位（低电平）SHCP 11 移位寄存器时钟输入STCP 12 存储寄存器时钟输入OE 13 输出有效（低电平）DS 14 串行数据输入VCC 16 电源[编辑本段]功能表输入输出功能SHCP STCP OE MR DS Q7’Qn ××L ↓×L NC MR为低电平时仅仅影响移位寄存器×↑L L ×L L 空移位寄存器到输出寄存器××H L ×L Z 清空移位寄存器，并行输出为高阻状态↑×L H H Q6 NC 逻辑高电平移入移位寄存器状态0，包含所有的移位寄存器状态移入，例如，以前的状态6（内部Q6”）出现在串行输出位。

HD74HC5958-bit Shift Register/Latch (with 3-state outputs)DescriptionThis device each contains an 8-bit serial-in, parallel-out shift register that feeds an 8-bit D-type storage register. The storage register has parallel 3-state outputs. Separate clocks are provided for both the shift register and the storage register. The shift register has a direct-overriding clear, serial input, and serial output pins for cascading.Both the shift register and storage register clocks are positive-edge triggered. If the user wishes to connect both clocks together, the shift register state will always be one clock pulse ahead of the storage register. Features• High Speed Operation: t pd (RCK to Q) = 17 ns typ (C L = 50 pF)• High Output Current: Fanout of 15 LSTTL Loads (Q A to Q H outputs)• Wide Operating Voltage: V CC = 2 to 6 V• Low Input Current: 1 µA max• Low Quiescent Supply Current: I CC (static) = 4 µA max (Ta = 25°C)Function TableRCK SCK SCLR G FunctionX X X H QA to QHhigh impedanceX X L X Shift register cleared QH’ = LHD74HC5952Pin ArrangementAbsolute Maximum RatingsItemSymbol Rating Unit Supply voltage range V CC –0.5 to +7.0V Input voltage V IN –0.5 to V CC + 0.5V Output voltage V OUT –0.5 to V CC + 0.5V Output currentI OUT ±35mA DC current drain per V CC , GND I CC , I GND ±75mA DC input diode current I IK ±20mA DC output diode current I OK ±20mA Power dissipation per package P T 500mW Storage TemperatureTstg–65 to +150°CHD74HC595 Logic Diagram3HD74HC5954DC CharacteristicsTa = 25°CTa = –40 to +85°CItem Symbol V CC (V)Min Typ Max MinMax Unit Test ConditionsInput voltageV IH2.0 1.5—— 1.5—V4.5 3.15—— 3.15—6.04.2—— 4.2—V IL2.0——0.5—0.5V 4.5—— 1.35—1.356.0——1.8— 1.8Output voltageV OH2.0 1.9 2.0— 1.9—VQ A to Q HI OH = –20 µA4.5 4.4 4.5— 4.4—Vin = V IH or V IL6.0 5.9 6.0— 5.9—4.5 4.18—— 4.13—I OH = –6 mA 6.05.68——5.63—I OH = –7.8 mA V OL2.0—0.00.1—0.1VQ A to Q HI OL = 20 µA4.5—0.00.1—0.1Vin = V IH or V IL6.0—0.00.1—0.14.5——0.26—0.33I OL = 6 mA 6.0——0.26—0.33I OL = 7.8 mA Output voltageV OH2.0 1.9 2.0— 1.9—VQ’HI OH = –20 µA4.5 4.4 4.5— 4.4—Vin = V IH or V IL6.0 5.9 6.0— 5.9—4.5 4.18—— 4.13—I OH = –4 mA 6.05.68——5.63—I OH = –5.2 mA V OL2.0—0.00.1—0.1VQ’HI OL = 20 µA4.5—0.00.1—0.1Vin = V IH or V IL6.0—0.00.1—0.14.5——0.26—0.33I OL = 4 mA 6.0——0.26—0.33I OL = 5.2 mAOff-state output current I OZ 6.0——±0.5—±5.0µA Vin = V IH or V IL ,Vout = V CC or GND Input current Iin 6.0——±0.1—±1.0µA Vin = V CC or GNDQuiescent supply currentI CC6.0——4.0—40µAVin = V CC or GND, Iout = 0 µAHD74HC5955AC Characteristics (C L = 50 pF, Input t r = t f = 6 ns)Ta = 25°CTa = –40 to +85°CItemSymbol V CC (V)Min Typ Max MinMax Unit Test ConditionsMaximum clock f max2.0——5—4MHzfrequency4.5——27—216.0——31—24Propagation delay t PLH 2.0——115—145nsSCK to Q H ’timet PHL 4.5—1223—296.0——20—25t PLH 2.0——150—190nsRCK to Qt PHL 4.5—1730—386.0——26—33t PLH 2.0——175—220nsSCLR to Q H ’4.5—2035—446.0——30—37Output enable t ZL 2.0——150—190ns timet ZH 4.5—1330—386.0——26—33Output disable t LZ 2.0——150—190ns time t HZ 4.5—1530—386.0——26—33Setup timet su2.0100——125—nsSER to SCK4.5201—25—6.017——21—2.0200——250—nsSCK to RCK4.5408—50—6.034——43—Pulse widtht w2.080——100—ns 4.5168—20—6.014——17—Removal timet rem2.0100——125—ns 4.520——25—6.017——21—HD74HC5956AC Characteristics (C L = 50 pF, Input t r = t f = 6 ns) (cont)Ta = 25°CTa = –40 to +85°CItem Symbol V CC (V)Min Typ Max MinMax Unit Test ConditionsHold timet h2.05——5—ns4.551—5—6.05——5—Output rise/fall t TLH 2.0——75—95nsQ H ’timet THL4.5—515—196.0——13—162.0——60—75nsQ4.5—412—156.0——10—13Input capacitanceCin——510—5pFHitachi CodeJEDECEIAJWeight (reference value)DP-16 Conforms Conforms 1.07 gHitachi Code JEDEC EIAJWeight (reference value)FP-16DA —Conforms 0.24 g*Dimension including the plating thicknessBase material dimension° – 8°Hitachi CodeJEDECEIAJWeight (reference value)FP-16DNConformsConforms0.15 gUnit: mm*Dimension including the plating thickness Base material dimension° – 8°元器件交易网Cautions1.Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,copyright, trademark, or other intellectual property rights for information contained in this document.Hitachi bears no responsibility for problems that may arise with third party’s rights, includingintellectual property rights, in connection with use of the information contained in this document.2.Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.3.Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,traffic, safety equipment or medical equipment for life support.4.Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.5.This product is not designed to be radiation resistant.6.No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.7.Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.Hitachi Asia Pte. Ltd.16 Collyer Quay #20-00Hitachi TowerSingapore 049318Tel: 535-2100Fax: 535-1533URLNorthAmerica : http:/Europe : /hel/ecg Asia (Singapore): .sg/grp3/sicd/index.htm Asia (Taiwan): /E/Product/SICD_Frame.htm Asia (HongKong): /eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htmHitachi Asia Ltd.Taipei Branch Office3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105)Tel: <886> (2) 2718-3666Fax: <886> (2) 2718-8180Hitachi Asia (Hong Kong) Ltd.Group III (Electronic Components)7/F., North Tower, World Finance Centre,Harbour City, Canton Road, Tsim Sha Tsui,Kowloon, Hong Kong Tel: <852> (2) 735 9218Fax: <852> (2) 730 0281 Telex: 40815 HITEC HXHitachi Europe Ltd.Electronic Components Group.Whitebrook ParkLower Cookham Road MaidenheadBerkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000Fax: <44> (1628) 778322Hitachi Europe GmbHElectronic components Group Dornacher Stra§e 3D-85622 Feldkirchen, Munich GermanyTel: <49> (89) 9 9180-0Fax: <49> (89) 9 29 30 00Hitachi Semiconductor (America) Inc.179 East Tasman Drive,San Jose,CA 95134 Tel: <1> (408) 433-1990Fax: <1>(408) 433-0223For further information write to:。

74HC595简介DS：串行数据输入，接Arduino的某个数字I/O引脚。

Q0~Q7：8位并行数据输出，可以直接控制8个LED，或者是七段数码管的8个引脚。

Q7′：级联输出端，与下一个74HC595的DS相连，实现多个芯片之间的级联。

SH_CP：移位寄存器的时钟输入。

上升沿时移位寄存器中的数据依次移动一位，即Q0中的数据移到Q1中，Q1中的数据移到Q2中，依次类推；下降沿时移位寄存器中的数据保持不变。

ST_CP：存储寄存器的时钟输入。

上升沿时移位寄存器中的数据进入存储寄存器，下降沿时存储寄存器中的数据保持不变。

应用时通常将ST_CP 置为低点平，移位结束后再在ST_CP端产生一个正脉冲更新显示数据。

MR：重置（RESET），低电平时将移位寄存器中的数据清零，应用时通常将它直接连高电平（VCC）。

OE：输出允许，高电平时禁止输出（高阻态）。

引脚不紧张的情况下可以用Arduino的一个引脚来控制它，这样可以很方便地产生闪烁和熄灭的效果。

实际应用时可以将它直接连低电平（GND）。

在一些不是很复杂的应用中，可以将MR和OE分别接VCC和地，只对DS、SH_CP和ST_CP三个引脚进行相关控制。

二 C语言程序#include<reg52.h>#include<intrins.h>#include<lcd.h>#define uchar unsigned char#define uint unsigned intsbit DS = P2^7;sbit SH_CP = P3^0;sbit ST_CP = P3^1;sbit duanx = P3^2;uchar disp_buffer[4];uchar const table[10]={48,49,50,51,52,53,54,55,56,57}; //1到9的ASCII码uchar const table2[]={0x3f,0x06,0x5b,0x4f,0x66,0x6d,0x7d,0x07,0x7f,0x6f,0x77,0x7c,0x39,0x5e,0x79,0x71};//共阴void remove_data(uchar Re_data);void lcd_init(void);void main(void){uint j = 0;uchar *s1 = "VALUE:",temp_data,disp_data,a;write_str(s1,0,0);write_str(s2,0,1);while(1){duanx = 0;a = table2[j++];remove_data(a);delay(100);disp_data = a;temp_data = disp_data/1000; writlcd();write_char(table[temp_data],7,0); temp_data = disp_data%1000/100; writlcd();write_char(table[temp_data],8,0); temp_data = disp_data%100/10; writlcd();write_char(table[temp_data],9,0); temp_data = disp_data%10;write_char(table[temp_data],10,0); if(j == 9 )j = 0;}}void remove_data(uchar Re_data){uint i;for(i=8; i>0; i--){if(Re_data&0x80)//判断高位是否为1 DS = 1;elseDS = 0;SH_CP = 0;_nop_();_nop_();SH_CP = 1;Re_data <<=1; //Re_data左移一位ST_CP = 0;_nop_();_nop_();ST_CP = 1; //上升沿将数据送到输出锁存器_nop_();_nop_();ST_CP = 0;}void lcd_init(void){lcd_rest();lcd_winst(0x01);set_cur(1);其中程序中红色部分便是对74HC595进移位和锁存操作。