1SMB5933中文资料

Features• Low profile package for surface mounting (flat handlingsurface for accurate placement)• Zener Voltage 3.3V to 200V • High Surge Current Capability• For available tolerances – see note 1• Available on Tape and Reel (see EIA std RS-481)Mechanical Data• Standard JEDEC outlines as shown• Terminals gull-wing or c-bend (modified J-bend) tin-lead platedand solderable per MIL-STD-750, method 2026• Polarity is indicated by cathode band• Maximum temperature for soldering: 260oC for 10 seconds.Maximum Ratings @ 25o C Unless Otherwise SpecifiedForward Voltage at 1.0A CurrentV F1.2 VoltsSteady State Power DissipationP (AV)5 Watts See note 2Operating and Storage Temperatures T J , T STG -55o C to+ 150oC Thermal ResistanceR θJL25o C/WNotes1. Mounted on copper pads as shown below.2. Lead temperature at 25o C = T L at mounting plane. Deratelinearly above 25o C to zero power at 150 oC0.070”0.090"0.085”Modified J BendPAD LAYOUTomp onents 21201 Itasca Street Chatsworth! "# $ % ! "#Features• Low profile package for surface mounting (flat handlingsurface for accurate placement)• Zener Voltage 3.3V to 200V • High Surge Current Capability• For available tolerances – see note 1• Available on Tape and Reel (see EIA std RS-481)Mechanical Data• Standard JEDEC outlines as shown• Terminals gull-wing or c-bend (modified J-bend) tin-lead platedand solderable per MIL-STD-750, method 2026• Polarity is indicated by cathode band• Maximum temperature for soldering: 260oC for 10 seconds.Maximum Ratings @ 25o C Unless Otherwise SpecifiedForward Voltage at 1.0A CurrentV F1.2 VoltsSteady State Power DissipationP (AV)5 Watts See note 2Operating and Storage Temperatures T J , T STG -55oC to+ 150oC Thermal ResistanceR θJL25o C/WNotes1. Mounted on copper pads as shown below.2. Lead temperature at 25o C = T L at mounting plane. Deratelinearly above 25o C to zero power at 150 oC! "# $ % ! "#0.070”0.190"0.125”Gull WingPAD LAYOUTMicrosemiPart Number RegulatorVoltage(V Z)TestCurrent(I ZT)MaximumDynamicImpedance(Z Z)(A&B Suffix)MaximumReverseCurrent(I R)@ V RI R TestVoltage(V R)(Non-Suffix& A Suffix)I R TestVoltage(V R)(B,C,DSuffix)MaximumRegulatorCurrent(I ZM)(B,C,D Suffix)MaximumDynamicKneeImpedanceZ zk @ 1.0 mA(A,B,C,D Suffix)MaximumSurgeCurrent(I ZSM)MaximumVoltageRegulation(∆V Z)(A,B,C,DSuffix)Gull-WingLeadC-Bend(Mod – J)V mAdc OHMSµA V V mA OHMS AMPS VOLTSSMBG5333B SMBG5334B SMBG5335B SMBG5336B SMBG5337B SMBJ5333BSMBJ5334BSMBJ5335BSMBJ5336BSMBJ5337B3.33.63.94.34.73803503202902603.02.52.02.02.030015050105.01.01.01.01.01.01.01.01.01.01.0144013201220110010104005005005004502018.717.616.415.30.850.800.540.490.44SMBG5338B SMBG5339B SMBG5340B SMBG5341B SMBG5342B SMBJ5338BSMBJ5339BSMBJ5340BSMBJ5341BSMBJ5342B5.15.66.06.26.82402202002001751.51.01.01.01.01.01.01.01.0101.02.03.03.04.91.02.03.03.05.293086579076570040040030020020014.413.412.712.411.50.390.250.190.100.15SMBG5343B SMBG5344B SMBG5345B SMBG5346B SMBG5347B SMBJ5343BSMBJ5344BSMBJ5345BSMBJ5346BSMBJ5347B7.58.28.79.1101751501501501251.51.52.02.02.01010107.55.06.46.96.256.67.25.76.26.66.97.663058054552047520020020015012510.7109.59.28.60.150.200.200.220.22SMBG5348B SMBG5349B SMBG5350B SMBG5351B SMBG5352B SMBJ5348BSMBJ5349BSMBJ5350BSMBJ5351BSMBJ5352B1112131415125100100100752.52.52.52.52.55.02.01.01.01.08.08.69.410.110.88.49.19.910.611.543039526534031512512510075758.07.57.06.76.30.250.250.250.250.25SMBG5353B SMBG5354B SMBG5355B SMBG5356B SMBG5357B SMBJ5353BSMBJ5354BSMBJ5355BSMBJ5356BSMBJ5357B161718192075706565652.52.52.53.03.01.00.50.50.50.511.512.21313.714.412.212.313.714.415.229528026425023775757575756.05.85.55.35.10.300.350.400.400.40SMBG5358B SMBG5359B SMBG5360B SMBG5361B SMBG5362B SMBJ5358BSMBJ5359BSMBJ5360BSMBJ5361BSMBJ5362B222425272850505050503.53.54.05.06.00.50.50.50.50.515.817.31819.420.116.718.21920.621.2216198190176170751001101201304.74.44.34.13.90.450.550.550.600.60SMBG5363B SMBG5364B SMBG5365B SMBG5366B SMBG5367B SMBJ5363BSMBJ5364BSMBJ5365BSMBJ5366BSMBJ5367B303336394340403030308.0101114200.50.50.50.50.521.623.825.928.13122.825.127.429.732.71581441321221101401501601701903.73.53.33.12.80.600.630.650.650.70SMBG5368B SMBG5369B SMBG5370B SMBG5371B SMBG5372B SMBJ5368BSMBJ5369BSMBJ5370BSMBJ5371BSMBJ5372B4751566062252520202025273540420.50.50.50.50.533.836.740.34344.635.838.842.545.547.1100938679762102302803504002.72.52.32.22.10.800.901.001.201.35SMBG5373B SMBG5374B SMBG5375B SMBG5376B SMBG5377B SMBJ5373BSMBJ5374BSMBJ5375BSMBJ5376BSMBJ5377B6875828791202015151544456575750.50.50.50.50.54954596365.551.75662.26669.270635854.552.55006207207607602.01.91.81.71.61.501.601.802.002.20SMBG5378B SMBG5379B SMBG5380B SMBG5381B SMBG5382B SMBJ5378BSMBJ5379BSMBJ5380BSMBJ5381BSMBJ5382B100110120130140121210108.0901251701902300.50.50.50.50.57279.286.493.61017683.691.293.810647.54339.536.63480010001150125015001.51.41.31.21.22.302.502.502.502.50SMBG5383B SMBG5384B SMBG5385B SMBG5386B SMBG5387B SMBG5388B SMBJ5383BSMBJ5384BSMBJ5385BSMBJ5386BSMBJ5387BSMBJ5388B1501601701801902008.08.08.05.05.05.03303503804304504800.50.50.50.50.50.510811512213013714411412212913714415231.529.42826.42523.61500166017501750185018501.11.11.01.00.90.93.003.003.004.005.005.00Electrical CharacteristicsNote 1Devices listed have a ± 5% tolerance on nominal V Z.The suffix A denotes a ± 20% tolerance, suffix Cdenotes ± 2%, and suffix D denotes ± 1%.Note 2Nominal Zener Voltage (V Z) is read with the device in standard test clips with 3/8 to ½ inch spacing betweenclip and case of the diode. Before reading, the diode isallowed so stabilize for a period of 40 ± 10 millisecondsat 25°C (+8, -2°C).Note 3The Zener impedance (Z ZT or Z ZK is derived from the 60H Z ac voltage, which results when an ac current havinga rms value equal to 10% of the dc zener current (I ZT orI ZK) is superimposed on I ZT or I ZK respectively. Dynamicimpedance variations with other current values aredescribed in Micronote 202.Note 4The Maximum Reverse (leakage) Current is specified for devices with ± 20% and ± 10% voltage toleranceson nominal V Z in another column.Note 5The Maximum Zener Current (I ZM) shown is for ± 5% tolerance devices. I ZM for ± 10% and ± 20% devicescan be calculated using the formula:I ZM = PV ZMWhere “V ZM” is V Z at the high end of the voltagetolerance specified and “P” is the rated power of thedevice.Note 6The Surge Current (I ZM) is specified as the maximum peak of a nonrecurring sine wave of 8.3 millisecondsduration.Note 7Voltage Regulation (∆V Z) is the difference between the voltage measured at 10% and 50% I ZM).。

Max. 3.50 3.80 4.10 4.56 4.93 5.36 5.92 6.51 7.18 7.88 8.67 9.59 10.5 11.6 12.6 14.1 15.8 17.1 19.2 21.2 23.3 26.0 28.9 32.0 34.9 37.9 41.5 45.6 49.8 54.0 58.8 65.6 71.7 78.8 87.0 96.0 105 116 127 142 157 172 191 211
安徽富信半导体科技有限公司
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO. , LTD.
SMB Surface Mounted Zener Diode 表面贴装稳压二极管 ■SMB(DO-214AA) Internal Configuration 内部结构
SMBZ5913B-SMBZ5956B
SMBZ5913B-SMBZ5956B
■Dimension 外形封装尺寸
931B
15 47
932B
17 43
933B
18 38
934B
21 35
935B
23 31
936B
25 28
937B
27 26
938B
30 24
939B
32 22
940B
35 20
941B
38 18
942B
42 17
943B
47 15
944B
52 14
945B
56 12
946B
62 11
947B
69 10
结温和储藏温度
Symbol 符号 PD(Ta=25℃) PD(TL=75℃) VF(@ IF=200mA)

1MSM9552/MSM9553¡ SemiconductorGENERAL DESCRIPTIONThe MSM9552 and MSM9553 are LSI devices which demodulate FM character multiplex signals in the DARC (DAta Radio Channel)* format to acquire digital data. The MSM9552 and MSM9553operate on 5V and 3V, respectively. In the DARC format, baseband signals at ordinary FM broadcasting frequencies are multiplexed with 16k-bps digital data which are L-MSK-modulated at 76kHz.Each of the MSM9552 and MSM9553 has a bandpass filter consisting of SCF, frame synchroniza-tion circuit, error correction circuit, etc. on a single chip.So, a system for acquisition of digital data can be easily constructed by externally mounting an FM receiver tuner, microcontroller for control, and memory for temporary storage of data.The MSM9552 and MSM9553 have a simple configuration, and are equipped with only necessary functions. By making changes to software for the external microcontroller, the MSM9552 and MSM9553 can meet the various requirements of FM multiplex broadcasting services which will be offered in future.These LSI devices are best suited to the radio sets and information devices for FM character multiplex broadcasting, which started in Japan in October 1994. Especially, the MSM9553 is suitable for portable units.* DARC is a registered trademark of NHK ENGINEERING SERVICES, INC.Note that a contract needs to be made with NHK Engineering Service if a manufacturer produces/sells electronic equipment utilizing the DARC technology.FEATURES•Built-in bandpass filter (SCF)•Built-in block synchronization circuit and frame synchronization circuit •Setting of the number of synchronization protecting stages •Regeneration of data clocks by digital PLL •1T delay detection•Built-in error correction circuit•Built-in layer 4 and layer 2 CRC check circuit •Microcontroller parallel interface•Clock output for external devices (64kHz to 8.192MHz selectable)•International standard frame format •Power source:5V (MSM9552), 3V (MSM9553)•Package44-pin plastic QFP (QFP44-P-910-0.80-2K)¡ Semiconductor MSM9552/MSM9553LSI for FM Multiplex Data DemodulationMSM9552/MSM9553 2BLOCK DIAGRAMData bus DB0-DB7AddressAD0-AD5CSWRRD CLRXTAL1XTAL2XOUT INT¡ Semiconductor3MSM9552/MSM9553¡ Semiconductor 44-Pin Plastic QFPNote:Leave the NC pins open.PIN CONFIGURATION (TOP VIEW)A0XOUT CS XTAL2XTAL1DV DD DGND DB7DB6DB5DB4D B 3D B 2D B 1D B 0R DN CW RI N TM O U T 6M O U T 5M O U T 4MON ADETIN AV DD AGND SG A IN XOUTC MOUT0MOUT1MOUT2MOUT3A 1A 2A 3A 4A 5N CC L RI O R DI O W RN CN C¡ SemiconductorMSM9552/MSM95534PIN DESCRIPTIONFunction Symbol Pin Type DescriptionMicro-controller interfaceWR 16I Write signal to internal register RD 18I Read signal to internal registerINT 15O Interrupt signal to microcontroller. "L": Occurrence of an interruptCS 31I Chip select signal."L": Read, write, and data bus signals valid CLR 40I "L" initializes internal registers, and the device enters power down modeA0 to A533 to 38I Address signal to internal register DB0 to DB719 to 26I/O Data bus signal to internal register A IN 6I FM multiplex signal inputSG 5O Analog reference voltage output pin. To prevent noise, connect a capacitor between this pin and analog ground.MON 1O Analog section waveform monitor pin. The analog block is specified by the analog control register.ADETIN 2I Analog signal input pin for testingIORD IOWR 4142I Digital section test signal input pins. Internally pulled up.MOUT0 to MOUT68 to 14O Digital section test signal output and monitor output pins XTAL129I 8.192MHz crystal oscillator connection pin XTAL230O 8.192MHz crystal oscillator connection pinXOUT 32O Pin for supply of 64kHz to 8.192MHz clock to the outside XOUTC7I XOUT output control pin."L"=Clock output, "H"=Output disabled. Pulled up internally.AV DD 3—Analog section power supply pin AGND 4—Analog ground pinDV DD 28—Digital section power supply pin DGND27—Digital ground pinTuner interface Analog section test Digitalsection testClockPower supply5MSM9552/MSM9553¡ Semiconductor ABSOLUTE MAXIMUM RATINGS (MSM9552)ParameterSymbol Condition Rating UnitPower supply voltage AV DD =DV DD Ta=25°C AV DD DV DD –0.3 to +7.0V Input voltage Output voltageV I V O –0.3 to AV DD +0.3–0.3 to DV DD +0.3Maximum power dissipation Ta=25°C per package P D 400mW Ta=25°C per output50Storage temperature—T STG–55 to +150°C RECOMMENDED OPERATING CONDITIONS (MSM9552)ParameterSymbol Condition Range Unit Power supply voltage AV DD =DV DDAV DD DV DD 4.5 to 5.5V Applied PinAV DD DV DD Crystal frequency —f XTAL 8.192MHz ±100ppm—XTAL1XTAL2FM multiplex signal input voltageComposite signals,including multiplex signalsV AIN 0.5 to 2V P-P A IN Operating temperature—T OP–40 to +85°C—ELECTRICAL CHARACTERISTICS (MSM9552)ParameterSymbol Condition Min.Unit Current consumptionDuring operation, No load f=8.192MHzI DD—Applied Pin AV DD DV DDTyp.Max.1632mA During power down, No load——20m A BPF pass band attenuation72 - 80kHzVariable gain amplifier gain: 0dBGAIN1—MON —3.0dBBPF reject band attenuation 0 - 53kHzVariable gain amplifier gain: 0dBGAIN250MON——dB BPF reject band attenuation 100 - 500kHzVariable gain amplifier gain: 0dBGAIN350MON——dB¡ SemiconductorMSM9552/MSM95536ABSOLUTE MAXIMUM RATINGS (MSM9553)RECOMMENDED OPERATING CONDITIONS (MSM9553)ELECTRICAL CHARACTERISTICS (MSM9553)ParameterSymbol Condition Rating UnitPower supply voltage AV DD =DV DD Ta=25°C AV DD DV DD –0.3 to +7.0V Input voltage Output voltageV I V O –0.3 to AV DD +0.3–0.3 to DV DD +0.3Maximum power dissipation Ta=25°C per package P D 400mW Ta=25°C per output50Storage temperature—T STG–55 to +150°C ParameterSymbol Condition Range Unit Power supply voltage AV DD =DV DDAV DD DV DD 2.7 to 3.3V Applied PinAV DD DV DD Crystal frequency —f XTAL 8.192MHz ±100ppm—XTAL1XTAL2FM multiplex signal input voltageComposite signals,including multiplex signalsV AIN 0.2 to 0.9V P-P A IN Operating temperature—T OP–20 to +75°C—ParameterSymbol Condition MIN Unit Current consumptionDuring operation, No load f=8.192MHzI DD—Applied Pin AV DD DV DDTYP MAX 1322mA During power down, No load——10m A BPF pass band attenuation72 - 80kHzVariable gain amplifier gain: 0dBGAIN1—MON —3.0dBBPF reject band attenuation0 - 53kHzVariable gain amplifier gain: 0dBGAIN250MON——dB BPF reject band attenuation100 - 500kHzVariable gain amplifier gain: 0dBGAIN350MON——dB (1)(2)7MSM9552/MSM9553¡ SemiconductorAPPLICATION CIRCUITLCD driver with built-in 128-channelRAM for liquid crystal dot matrixMSM6794:。

0.2 10mA 100mA 1A 10A 0 1mA 10mA 100mA 1A 10A
0 1mA
IC-Collector Current hFE V IC
10 1 0.1
-55 °C +25 °C +100 °C
IC-Collector Current VBE(sat) v IC
V
+-=5V
1.0 0.8 0.6 0.4 0.2 0 1mA 10mA 100mA 1A 10A
TYPICAL CHARACTERISTICS
0.4 0.3 0.2 0.1 0
+ * I+/I*=50
I /I =10
+25 ° C
0.4 0.3 0.2 0.1 0
I /I =10
) *
-55 °C +25 °C +100 °C
1mA
10mA
100mA
1A
10A
1mA
10mA
100mA
1A
10A
DC 1s 100ms 10ms 1ms 100 s
0.01 0.001 0.1V
µ
IC-Collector Current
VCE - Collector Emitter Voltage (V)
1V
10V
1erating Area
3 - 142
IC-Collector Current VCE(sat) v IC
400 300 200 100
IC-Collector Current VCE(sat) v IC
V
+-=5V
1.0 0.8 0.6 0.4
I /I =10