特点高精度，支持50Hz/60Hz IEC521/1036标准的精度要求，在500:1的动态范围内平均误差小于0.3%，信号跳动小于0.3%校表过程中高稳定性，输出频率波动小于0.1% 精确测量正、负两个方向的有功功率，且以同一方向计算电能有两个电流采样端，分别采样火线和零线电流，取两个电流采样端中的较大值作为计量，即使在错误用电时电流通道增益可变，在电流通道输入端可以使用小的分流电阻慢速输出脉冲能直接驱动电机工作，快速输出脉冲可用于计算机数据处理防窃电功能，逻辑输出脚REVP 、FAULT 用于显示反向用电或者错误用电状况芯片上有电压检测电路，检测掉电状况 具有防潜动功能芯片上带参考电压源2.44V ±8%（温度系数典型值30ppm/℃），也可以使用外部电压源 单工作电源5V低功耗15mW （典型值）相关专利申请中概述BL6501A 集成电路是电子电度表的核心芯片，基于此芯片设计的电子电度表具有外围电路简单、精度高、稳定性好等特点，适用于单相两线电力用户的电能计量。
利用BL6501A 可以制成单相反窃电功能的电子电度表，这种电度表以同一方向计量计算正向或负向的有功功率，累计用电量。
BL6501A 具有两个电流采样端，分别采样火线和零线电流，当电流误差超过12.5%时，表明有窃电行为或错误接线，Pin19（FAULT ）发出指示信号，并按照两个电流中大的一个电流值计量。
BL6501A 基于数字信号处理，有测量负向有功功率的功能。
它能把负向有功功率转换成与正向有功功率方向一致的脉冲输出。
Pin22（CF ）输出较高频率的脉冲，用于计量和计算机数据处理，Pin23（F1）和Pin24（F2）输出较低频率的脉冲用于驱动脉冲电机，间接驱动机械字轮计度器，记录用电量。
在测量负向功率时Pin20（REVP ）有负电平输出，用于指示该时的功率为负方向。
BL6501A 着重考虑了校表过程中读数误差的稳定性的需求，成品测量数据表明在小信号5%Ib （Ib=5A ）情况下输出校表脉冲信号的稳定度在0.1%以内。
BF591中文资料DATA SHEETProduct speci?cationSupersedes data of September 1994File under Discrete Semiconductors, SC041997Jul02DISCRETE SEMICONDUCTORS BF591; BF593NPN high-voltage transistorsM3D067NPN high-voltage transistors BF591; BF593FEATURESLow current (max. 150mA)High voltage (max. 210V).APPLICATIONSTelephone systems.DESCRIPTIONNPN high-voltage transistor in a TO-202; SOT128B plastic package.PINNINGPIN DESCRIPTION1emitter2collector, connected to mounting base3baseFig.1Simplified outline (TO-202; SOT128B)and symbol.handbook, halfpage213MAM305123QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS MIN.MAX.UNIT V CBO collector-base voltage open emitterBF591?210VBF593?250VV CEO collector-emitter voltage open baseBF591?170VBF593?210VI CM peak collector current?300mAP tot total power dissipation T amb≤55°C? 1.3Wh FE DC current gain I C=20mA; V CE=5V30?I C=100mA; V CE=6V30?NPN high-voltage transistors BF591; BF593LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC134).SYMBOL PARAMETER CONDITIONS MIN.MAX.UNIT V CBO collector-base voltage open emitterBF591?210VBF593?250VV CEO collector-emitter voltage open baseBF591?170VBF593?210VV EBO emitter-base voltage open collector?5VI C collector current (DC)?150mAI CM peak collector current?300mAI BM peak base current?100mAP tot total power dissipation T amb≤55°C? 1.3WT stg storage temperature?65+150°CT j junction temperature?150°CT amb operating ambient temperature?65+150°CTHERMAL CHARACTERISTICSSYMBOL PARAMETER CONDITIONS VALUE UNITR th j-a thermal resistance from junction to ambient in free air73K/WCHARACTERISTICST j=25°C unless otherwise speci?ed.SYMBOL PARAMETER CONDITIONS MIN.MAX.UNIT I CBO collector cut-off current I E=0; V CB=60V?50nAI E=0; V CB=60V; T j=140°C?1μAI EBO emitter cut-off current I C=0; V EB=5V?100nAh FE DC current gain note1I C=20mA; V CE=5V30?I C=100mA; V CE=6V30?I C=150mA; V CE=7V20?Note1.Pulse tes t: t p≤300μs;δ≤0.01.NPN high-voltage transistorsBF591; BF593PACKAGE OUTLINEUNIT b p D E 1L 1L 2(1)max L c c 1E P Q w REFERENCESOUTLINE VERSION EUROPEAN PROJECTIONISSUE DATE IECJEDEC EIAJmm0.80.60.650.50.560.468.68.410.19.92.5413.312.2e 15.08e H E 24.223.82.42.03.83.6P 13.93.70.251.71.5DIMENSIONS (mm are the original dimensions) 2.5SOT128BTO-20297-02-28A c 1DEL 1L 2Lb p cE 1H EPQAP 14.64.4Plastic single-ended leaded (through hole) package; with cooling fin, mountable to heatsink,1 mounting hole; 3 leads (in-line)SOT128B3510 mmscalew MNote1. Plastic flash allowed within this zoneNPN high-voltage transistors BF591; BF593DEFINITIONSData sheet statusObjective speci?cation This data sheet contains target or goal speci?cations for product development. Preliminary speci?cation This data sheet contains preliminary data; supplementary data may be published later. Product speci?cation This data sheet contains ?nal product speci?cations.Limiting valuesLimiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speci?cation is not implied. Exposure to limiting values for extended periods may affect device reliability.Application informationWhere application information is given, it is advisory and does not form part of the speci?cation.LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices, or systems where malfunction of theseproducts can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.NPN high-voltage transistors BF591; BF593NOTESNPN high-voltage transistors BF591; BF593NOTESInternet: /doc/0b12193695.html,Philips Semiconductors – a worldwide companyPhilips Electronics N.V. 1997SCA54All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. 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