IR2213芯片资料
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Typical ConnectionFeatures
•Floating channel designed for bootstrap operation
Fully operational to +1200V
Tolerant to negative transient voltage
dV/dt immune
•
Gate drive supply range from 12 to 20V
•
Undervoltage lockout for both channels
•
3.3V logic compatible
Separate logic supply range from 3.3V to 20V
Logic and power ground ±5V offset
•
CMOS Schmitt-triggered inputs with pull-down
•
Cycle by cycle edge-triggered shutdown logic
•
Matched propagation delay for both channels
•
Outputs in phase with inputs
•
Also available LEAD-FREE (PbF)
Description
The IR2213(S) is a high voltage, high speed power
MOSFET and IGBT driver with independent high and
low side referenced output channels. Proprietary
HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction. Logic inputs are
compatible with standard CMOS or LSTTL outputs,
down to 3.3V logic. The output drivers feature a highPackagesIR2213(S) & (PbF)
HIGH AND LOW SIDE DRIVER
Product Summary
V
OFFSET1200V max.
I
O+/-1.7A / 2A
V
OUT12 - 20V
t
on/off (typ.)280 & 225 ns
Delay Matching30 ns
16-Lead SOIC
(wide body)
14-Lead PDIPPreliminary Data Sheet No. PD60030 rev.O
pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched
to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power
MOSFET or IGBT in the high side configuration which operates up to 1200 volts.
HINup to 1200V
TO
LOADV
DDV
B
V
SHO
LOCOMHIN
LIN
V
SSSD
V
CCLINV
DD
SD
V
SS
V
CC
www.irf.com1(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical
connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.2www.irf.comIR2213(
S
) & (PbF)
Symbol
DefinitionMin.Max.Units
V
BHigh Side Floating Supply Voltage-0.31225
V
SHigh Side Floating Supply Offset VoltageV
B - 25V
B + 0.3
V
HOHigh Side Floating Output VoltageV
S - 0.3V
B + 0.3
V
CCLow Side Fixed Supply Voltage-0.325
V
LOLow Side Output Voltage-0.3V
CC + 0.3
V
DDLogic Supply Voltage-0.3V
SS + 25
V
SSLogic Supply Offset VoltageV
CC - 25V
CC + 0.3
V
INLogic Input Voltage (HIN, LIN & SD)V
SS - 0.3V
DD + 0.3
dVs/dtAllowable Offset Supply Voltage Transient (Figure 2)—50V/ns
P
DPackage Power Dissipation @ T
A ≤ +25°C (14 Lead PDIP)—1.6
(16 Lead SOIC)—1.25
R
THJAThermal Resistance, Junction to Ambient (14 Lead PDIP)—75
(16 Lead SOIC)—100
T
JJunction Temperature—125
T
SStorage Temperature-55150
T
LLead Temperature (Soldering, 10 seconds)—300
SymbolDefinitionMin.Max.Units
V
BHigh Side Floating Supply Absolute VoltageV
S + 12V
S + 20
V
SHigh Side Floating Supply Offset VoltageNote 11200
V
HOHigh Side Floating Output VoltageV
SV
B
V
CCLow Side Fixed Supply Voltage1220
V
LOLow Side Output Voltage0VCC
V
DDLogic Supply VoltageV
SS + 3V
SS + 20
V
SSLogic Supply Offset Voltage-5 (Note 2)5
V
INLogic Input Voltage (HIN, LIN & SD)V
SSV
DDAbsolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured
under board mounted and still air conditions.
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The VS and VSS offset ratings are tested with all supplies biased at 15V differential.
Note 1: Logic operational for V
S of -5 to +1200V. Logic state held for V
S of -5V to -V
BS. (Please refer to the Design Tip
DT97-3 for more details).
Note 2: When V
DD<5V, the minimum V
SS offset is limited to -V
DD°C/WWV
V°CIR2213(
S
) & (PbF)
www.irf.com3
SymbolDefinitionMin.Typ.Max.UnitsTest Conditions
t
onTurn-On Propagation Delay—280—V
S = 0V
t
offTurn-Off Propagation Delay—225—V
S = 1200V
t
sdShutdown Propagation Delay—230—V
S = 1200V
t
rTurn-On Rise Time—25—
t
fTurn-Off Fall Time—17—
MTDelay Matching, HS & LS Turn-On/Off——30nsDynamic Electrical Characteristics
V
BIAS (V
CC, V
BS, V
DD) = 15V, C
L = 1000 pF, T
A = 25°C and V
SS = COM unless otherwise specified. The dynamic
electrical characteristics are measured using the test circuit shown in Figure 3.
SymbolDefinitionMin.Typ.Max.UnitsTest Conditions
V
IHLogic “1” Input Voltage9.5——
V
ILLogic “0” Input Voltage——6.0
V
OHHigh Level Output Voltage, V
BIAS - V
O——1.2I
O = 0A
V
OLLow Level Output Voltage, V
O——0.1I
O = 0A
I
LKOffset Supply Leakage Current——50V
B = V
S = 1200V
I
QBSQuiescent V
BS Supply Current—125230V
IN = 0V or V
DD
I
QCCQuiescent V
CC Supply Current—180340V
IN = 0V or V
DD
I
QDDQuiescent V
DD Supply Current—1530V
IN = 0V or V
DD
I
IN+Logic “1” Input Bias Current—2040V
IN = V
DD
I
IN-Logic “0” Input Bias Current——1.0V
IN = 0V
V
BSUV+V
BS Supply Undervoltage Positive Going8.710.211.7
