LM100SS1T523中文资料

COLLECTOR SATURATION VOLTAGE : VCE(sat)[V]
1
Ta=25°C
1
IC/IB=20
10000
VCE=2V
COLLECTOR CURRENT : IC [mA]
1000
0.1
0.1
100
Ta=125°C 75°C 25°C -40°C
0.01
IC/IB=50 20 10
1 0.1
1
10
100
10 10
100 EMITTER CURRENT : IE[mA] Fig.8 Gain Bandwidth Product vs. Emitter Current
1000
100
COLLECTOR - BASE VOLTAGE : VCB [V] EMITTER - BASE VOLTAGE : VEB [V] Fig.7 Emitter Input Capacitance vs. Emitter-Base Voltage Collector Output Capacitance vs. Collector-Base Voltage
0.001 1 10 100 1000 10000 COLLECTOR CURRENT : IC[mA] Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( ΙΙ )
1 0 0.5 1 1.5 BASE TO EMITTER VOLTAGE : VBE[V] Fig.6 Ground Emitter Propagation Characteristics
*1 Pw=10ms, Single Pulse *2 Each terminal mounted on a recommended land. *3 Mounted on a ceramic board. (40x40x0.7mm³)

ABSOLUTE MAXIMUM RATINGSUnit V V V V V VNON-INSULATED TYPEM 400480320400480320Symbol V RRM V RSM V R (DC)V DRM V DSM V D (DC)ParameterRepetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltageRepetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltageUnit A A A A 2s A/µs W W V V A °C °C N·m kg·cm N·m kg·cm gConditionsThree-phase, half-wave, T C =122°C One half cycle at 60Hz, peak value Value for one cycle of surge current V D =1/2V DRM , I G =1.0A, T j =150°CMain terminal screw M5Mounting screw M6Typical valueRatings 155********.7 × 104505.00.5105.02.0–40~+150–40~+1251.47~1.9615~201.96~2.9420~30160Symbol I T (RMS)I T (AV)I TSM I 2t di/dt P GM P G (AV)V FGM V RGM I FGM T j T stg——ParameterRMS on-state current Average on-state currentSurge (non-repetitive) on-state current I 2t for fusingCritical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperatureMounting torqueWeight Voltage classELECTRICAL CHARACTERISTICSUnit mA mA V V/µs V V mA °C/W °C/WLimitsSymbol I RRM I DRM V TM dv/dt V GT V GD I GT R th (j-c)R th (c-f)ParameterRepetitive peak reverse current Repetitive peak off-state current On-state voltageCritical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Contact thermal resistanceTest conditionsT j =150°C, V RRM applied T j =150°C, V DRM appliedT j =150°C, I TM =300A, instantaneous meas.T j =150°C, V D =2/3V DRM T j =25°C, V D =6V, R L =2ΩT j =150°C, V D =1/2V DRM T j =25°C, V D =6V, R L =2ΩJunction to case (per 1/3 module)Case to fin, conductive grease applied (per 1/3 module)Min.———200—0.2515——Typ.—————————Max.30301.15—3.0—1000.20.3NON-INSULATED TYPENON-INSULATED TYPE。

2.0 特征
■ 100μA至1000μA的2个匹配的激励电流源 ■ 4-DIFF/7-SE灵活和可编程多路复用器通道 错误更正的SPI 4线串行接口 ■ ODR≤13.42SPS情况下，同时50赫兹和60赫兹线路抑制 ■ 各通道独立的增益和ODR选择 ■ WEBENCH传感器模拟前端电路设计工具全面支持 ■ 自动通道定序器
• 激励电流源(IB1和IB2) 两个匹配的内部激励电流，IB1和IB2，可以用来向各种不同的传 感器发送电流。在阶跃为100μA的条件下，其电流范围在100μA 至1000μA之间。

2
LMP90100
目录
1.0 一般说明 ............................................................................................................................................. 1 2.0 特征 .................................................................................................................................................... 1 3.0 主要技术规格 ....................................................................................................................................... 1 4.0 应用领域 .............................................................................................................................................. 1 5.0 典型应用 .............................................................................................................................................. 1 6.0 框图 .................................................................................................................................................... 2 7.0 订购信息 .............................................................................................................................................. 5 8.0 连线图 ................................................................................................................................................. 5 9.0 引脚描述 .............................................................................................................................................. 5 10.0 绝对最大额定值 ................................................................................................................................... 6 11.0 额定工作定值 ...................................................................................................................................... 6 12.0 电气特性 ............................................................................................................................................ 6 13.0 时序图 .............................................................................................................................................. 11 14.0 具体定义 ........................................................................................................................................... 14 15.0 典型性能特性 .................................................................................................................................... 15 16.0 功能说明 .......................................................................................................................................... 21

5 4
3
2
10
1
0
-1
-2
-3
2
3
4
5
6
7
8 9 10 11 12
1 10
100
NOMINAL ZENER VOLTAGE, Volts
NOMINAL ZENER VOLTAGE, Volts
TYPICAL REVERSE CURRENT
DYNAMIC IMPEDANCE, W
1000
IZ = 1 mA
FORWARD VOLTAGE, Volts
TYPICAL FORWARD VOLTAGE
POWER DISSIPATION, Watts
1.2
1.0
0.8
0.6
PD V.S. TA
0.4
0.2
0
25
50
75
100
125
150
155
TEMPERATURE (oC)
STEADY STATE POWER DERATING
Mechanical Data
Case: SOT-23, Plastic Terminals: Solderable per NIL-STD-202, Method 208 Approx. Weight: 0.008 gram
.119 (3.0) .110 (2.8)
.020 (0.5)
SOT-23 Top View
7
20 1000 0.25
5
4
+0.062
73
CZRT5235
6.8 6.46 7.14
5
20
750 0.25
3
5
+0.065