2SK2958资料
- 格式：pdf
- 大小：56.82 KB
- 文档页数：9
2SK2958(L),2SK2958(S)
Silicon N Channel MOS FETHigh Speed Power Switching
ADE-208-568B (Z)3rd. EditionJun 1998
Features
• Low on-resistance
RDS(on) = 5.5mΩ typ.
• 4V gate drive devices.
• High speed switching
Outline
1. Gate2. Drain3. Source4. Drain1234
1234LDPAK
GD
S2SK2958(L),2SK2958(S)
2Absolute Maximum Ratings (Ta = 25°C)
ItemSymbolRatingsUnit
Drain to source voltageVDSS30V
Gate to source voltageVGSS±20V
Drain currentID75A
Drain peak currentID(pulse)Note1300A
Body-drain diode reverse drain currentIDR75A
Channel dissipationPch Note2100W
Channel temperatureTch150°C
Storage temperatureTstg–55 to +150°C
Note:1.PW ≤ 10µs, duty cycle ≤ 1 %2.Value at Tc = 25°C
Electrical Characteristics (Ta = 25°C)
ItemSymbolMinTypMaxUnitTest Conditions
Drain to source breakdown voltageV(BR)DSS30——VID = 10mA, VGS = 0
Gate to source breakdown voltageV(BR)GSS±20——VIG = ±100µA, VDS = 0
Zero gate voltege drain currentIDSS——10µAVDS = 30 V, VGS = 0
Gate to source leak currentIGSS——±10µAVGS = ±16V, VDS = 0
Gate to source cutoff voltageVGS(off)1.0—2.0VID = 1mA, VDS = 10V
Static drain to source on stateresistanceRDS(on)—5.57.0mΩID = 40A, VGS = 10V Note3
Static drain to source on stateresistanceRDS(on)—9.014.0mΩID = 40A, VGS = 4V Note3
Forward transfer admittance|yfs|3560—SID = 40A, VDS = 10V Note3
Input capacitanceCiss—4100—pFVDS = 10V
Output capacitanceCoss—2700—pFVGS = 0
Reverse transfer capacitanceCrss—800—pFf = 1MHz
Turn-on delay timetd(on)—45—nsVGS = 10V, ID = 40A
Rise timetr—430—nsRL = 0.25Ω
Turn-off delay timetd(off)—460—ns
Fall timetf—440—ns
Body–drain diode forward voltageVDF—1.0—VIF = 75A, VGS = 0
Body–drain diode reverserecovery timetrr—90—nsIF = 75A, VGS = 0diF/ dt =50A/µs
Note:3.Pulse test2SK2958(L),2SK2958(S)
3Main Characteristics
160
120
80
0501001502000.10.3131030100
100
80
60
40
20
0246810Channel Dissipation Pch (W)
Case Temperature Tc (°C)Power vs. Temperature Derating
Drain to Source Voltage V (V)DSDrain Current I (A)
DMaximum Safe Operation Area
Drain to Source Voltage V (V)DSDrain Current I (A)
DTypical Output Characteristics
Gate to Source Voltage V (V)GSDrain Current I (A)
DTypical Transfer Characteristics1000
300
100
30
10
1
0.3
0.13
Ta = 25°C10 µs100 µs1 msDC Operation (Tc = 25°C)Operation inthis area islimited by RDS(on)PW = 10 ms (1 shot)
5 V4 V3.5 V
3 V40
V = 10 VGS6 V
2.5 V100
80
60
40
20
012345Tc = –25°C25°C
75°CV = 10 VPulse TestDSPulse Test2SK2958(L),2SK2958(S)
4
048121620
20
16
12
8
4
–40040801201600Gate to Source Voltage V (V)GSDrain to Source Saturation Voltage vs.Gate to Source Voltage
V (V)
DS(on)
Drain to Source Saturation Voltage
Drain Current I (A)DDrain to Source On State Resistance
R (m )W
DS(on)Static Drain to Source on State Resistancevs. Drain Current
Case Temperature Tc (°C)Static Drain to Source on State ResistanceStatic Drain to Source on State Resistancevs. Temperature
Drain Current I (A)DForward Transfer Admittance |y | (S)
fsForward Transfer Admittance vs.Drain Current
V = 4 VGS
10 VPulse Test
R (m )W
DS(on)0.5
0.4
0.3
0.2
0.1Pulse Test
I = 50 AD
20 A
10 A
130100350
25
110100030020
10V = 4 VGS
10 VPulse Test
10, 20 AI = 50 AD20 A10 A
50 A
0.10.3131030100500
100200
2050
10
25
1
0.5Tc = –25 °C
75 °C25 °CV = 10 VPulse TestDS2SK2958(L),2SK2958(S)
5
0.10.3131030100010203040503000100000
1000030000
50
40
30
20
10
020
16
12
8
4
8016024032040001000
100200
20
10
0.10.22101001000
500
100200
2050
10di / dt = 50 A / µsV = 0, Ta = 25 °CGS1000
300
201Reverse Drain Current I (A)DRReverse Recovery Time trr (ns)Body–Drain Diode ReverseRecovery Time
Capacitance C (pF)
Drain to Source Voltage V (V)DSTypical Capacitance vs.Drain to Source Voltage
Gate Charge Qg (nc)Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GSDynamic Input Characteristics
Drain Current I (A)DSwitching Time t (ns)Switching Characteristics100V = 0f = 1 MHzGSCiss
Coss
Crss
I = 75 ADVGS
VDSV = 5 V10 V25 VDD
V = 25 V10 V5 VDD
0.55520005000
500
50
50V = 10 V, V = 10 VPW = 5 µs, duty < 1 %GSDD
rt
d(on)td(off)t
tf
