BT151X-500C中文资料

April 2004
3
Rev 1.000
元器件交易网
Philips Semiconductors
Thyristors
Product specification
BT151X series C
IGT(Tj) 3 IGT(25 C)
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
-
voltages
IT(AV) IT(RMS) ITSM
I2t dIT/dt IGM VRGM PGM PG(AV) Tstg Tj
Average on-state current half sine wave; Ths ≤ 69 ˚C
-
RMS on-state current
all conduction angles
BT151X series C
15
Ptot (W)
conduction angle
(α) 30
30˚
form factor (a)
4 4.0
60˚
2.8
10
90˚
2.2
120˚
1.9
180˚
1.57
4
57.5
a = 1.57 Ths(max)
1.9
(°C)
2.2
80 2.8
5
102.5
α
00
2
4
6
125 8
Tj / C
Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
IL(Tj) IL(25 C) 3
BT145
2.5
2
1.5
1
0.5
0 -50
Fig.8.
0
50
100
150

Tj / C
IH
Holding current
VT
On-state voltage
VGT
Gate trigger voltage
ID, IR
Off-state leakage current
CONDITIONS VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 23 A VD = 12 V; IT = 0.1 A VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C
IT(AV) (A)
Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV).
1000 ITSM / A
dIT/dt limit 100
MIN.
-
TYP.
55
MAX.
4.5 6.5
-
UNIT
K/W K/W K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER
IGT
Gate trigger current
IL
Latching current
currents, f = 50 Hz; Ths ≤ 69˚C.
VGT(Tj) 1.6 VGT(25 C)
1.4
1.2
1
0.8
0.6
0.4-50
0
50
100
150
Tj / C
Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
CONDITIONS
dVD/dt
tgt tq
Critical rate of rise of off-state voltage
Gate controlled turn-on time Circuit commutated turn-off time
VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform
Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj.
Gate open circuit RGK = 100 Ω
ITM = 40 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs VD = 67% VDRM(max); Tj = 125 ˚C; ITM = 20 A; VR = 25 V; dITM/dt = 30 A/µs; dVD/dt = 50 V/µs; RGK = 100 Ω
case
12 3
SYMBOL
a
k g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 60134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM, VRRM Repetitive peak off-state
-
Non-repetitive peak on-state current
half sine wave; Tj = 25 ˚C prior to surge
t = 10 ms
-
t = 8.3 ms
-
I2t for fusing
t = 10 ms
-
Repetitive rate of rise of ITM = 20 A; IG = 50 mA;
Storage temperature
-40
Junction temperature
-
MAX. -500C -650C -800C 5001 6501 800
7.5 12
100 110 50 50
2 5 5 0.5 150 125
UNIT
V
A A
A A A2s A/µs
A V W W ˚C ˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
SYMBOL PARAMETER
Rth j-hs Rth j-a
Thermal resistance junction to heatsink Thermal resistance junction to ambient
CONDITIONS
with heatsink compound without heatsink compound in free air
sinusoidal currents, f = 50 Hz.
25 IT(RMS) / A
20
15
10
5
0
0.01
0.1
1
10
surge duration / s
Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal
Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER
CONDITIONS
Visol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
14 IT(RMS)
(A) 12
69 °C
10
8
6
4
2
0
-50
0
50
100 Ths (°C) 150
Fig.3. Maximum permissible rms current IT(RMS) , versus heatsink temperature Ths.
ITSM / A 120 100
80
IT
MIN. TYP. MAX. UNIT
50 130
- V/µs
200 1000 - V/µs
-
2
-
µs
-
70
-
µs
April 2004
2
Rev 1.000
元器件交易网
Philips Semiconductors
Thyristors
Product specification
waveform;
heatsink
R.H. ≤ 65% ; clean and dustfree
Cisol
Capacitance from pin 2 to
f = 1 MHz
external heatsink
MIN. TYP. MAX. UNIT
-