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P6SMB18CAT3资料

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© Semiconductor Components Industries, LLC, 2006July, 2006 − Rev. 81Publication Order Number:P6SMB11CAT3/DP6SMB11CAT3 Series

600 Watt Peak Power ZenerTransient Voltage SuppressorsBidirectional*The SMB series is designed to protect voltage sensitivecomponents from high voltage, high energy transients. They haveexcellent clamping capability, high surge capability, low zenerimpedance and fast response time. The SMB series is supplied inON Semiconductor’s exclusive, cost-effective, highly reliableSurmetict package and is ideally suited for use in communicationsystems, automotive, numerical controls, process controls, medicalequipment, business machines, power supplies and many otherindustrial/consumer applications.Features•Working Peak Reverse Voltage Range − 9.4 to 77.8 V•Standard Zener Breakdown Voltage Range − 11 to 91 V•Peak Power − 600 W @ 1 ms•ESD Rating of Class 3 (>16 KV) per Human Body Model•Maximum Clamp Voltage @ Peak Pulse Current•Low Leakage < 5 mA Above 10 V•UL 497B for Isolated Loop Circuit Protection•Response Time is Typically < 1 ns•Pb−Free Packages are AvailableMechanical Characteristics:CASE: Void-Free, Transfer-Molded, Thermosetting PlasticFINISH: All External Surfaces are Corrosion Resistant and Leads areReadily SolderableMAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:260°C for 10 SecondsLEADS: Modified L−Bend Providing More Contact Area to Bond PadsPOLARITY: Polarity Band Will Not be IndicatedMOUNTING POSITION: AnyMAXIMUM RATINGSRatingSymbolValueUnitPeak Power Dissipation (Note 1) @ TL = 25°C,Pulse Width = 1 msPPK600WDC Power Dissipation @ TL = 75°CMeasured Zero Lead Length (Note 2)Derate Above 75°CThermal Resistance, Junction−to−LeadPDRqJL3.04025WmW/°C°

C/WDC Power Dissipation (Note 3) @ TA = 25°CDerate Above 25°CThermal Resistance, Junction−to−AmbientPDRqJA0.554.4226WmW/°C°C/W

Operating and Storage Temperature RangeTJ, T

stg−65 to+150°CStresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.1.10 X 1000 ms, non−repetitive2.1″ square copper pad, FR−4 board3.FR−4 board, using ON Semiconductor minimum recommended footprint, asshown in 403A case outline dimensions spec.*Please see P6SMB6.8AT3 to P6SMB200AT3 for Unidirectional devices.PLASTIC SURFACE MOUNTZENER OVERVOLTAGETRANSIENT SUPPRESSORS9.4−78 VOLTS600 WATT PEAK POWER

Devices listed in bold, italic are ON SemiconductorPreferred devices. Preferred devices are recommendedchoices for future use and best overall value.DevicePackageShipping†ORDERING INFORMATION

P6SMBxxCAT3SMB2500/Tape & ReelSMBCASE 403APLASTIC

MARKING DIAGRAMhttp://onsemi.com

AYWWxxCGG

xxC= Device CodeA= Assembly LocationY= YearWW= Work WeekG= Pb−Free Package(Note: Microdot may be in either location)

P6SMBxxCAT3GSMB(Pb−Free)2500/Tape & Reel

†For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationsBrochure, BRD8011/D.The “T3” suffix refers to a 13 inch reel.元器件交易网www.cecb2b.com

Bi−Directional TVSIPPIPP

VI

IRITITIRVRWMVCVBRVRWMVCVBRP6SMB11CAT3 Series

http://onsemi.com2ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted)SymbolParameterIPPMaximum Reverse Peak Pulse CurrentVCClamping Voltage @ IPPVRWMWorking Peak Reverse VoltageIRMaximum Reverse Leakage Current @ VRWMVBRBreakdown Voltage @ ITITTest CurrentQVBRMaximum Temperature Coefficient of VBR

ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)

Device*DeviceMarkingVRWM(Note 4)IR @VRWMBreakdown VoltageVC @ IPP (Note 6)QVBRCtyp(Note 7)VBR Volts (Note 5)@ ITVCIPPVoltsmAMinNomMaxmAVoltsAmps%/°CpFP6SMB11CAT3, GP6SMB12CAT3, GP6SMB13CAT3, G11C12C13C9.410.211.155510.511.412.411.051213.0511.612.613.711115.616.718.23836330.0750.0780.081865800740P6SMB15CAT3, GP6SMB16CAT3, GP6SMB18CAT3, GP6SMB20CAT3, G15C16C18C20C12.813.615.317.1555514.315.217.11915.0516182015.816.818.921111121.222.525.227.7282724220.0840.0860.0880.09645610545490P6SMB22CAT3, GP6SMB24CAT3, GP6SMB27CAT3, GP6SMB30CAT3, G22C24C27C30C18.820.523.125.6555520.922.825.728.5222427.053023.125.228.431.5111130.633.237.541.420181614.40.090.0940.0960.097450415370335P6SMB33CAT3, GP6SMB36CAT3, GP6SMB39CAT3, GP6SMB43CAT3, G33C36C39C43C28.230.833.336.8555531.434.237.140.933.053639.0543.0534.737.84145.2111145.749.953.959.313.21211.210.10.0980.0990.10.101305280260240P6SMB47CAT3, GP6SMB51CAT3, GP6SMB56CAT3, GP6SMB62CAT3, G47C51C56C62C40.243.647.853555544.748.553.258.947.0551.05566249.453.658.865.1111164.870.177859.38.67.87.10.1010.1020.1030.104220205185170P6SMB68CAT3, GP6SMB75CAT3, GP6SMB82CAT3, GP6SMB91CAT3, G68C75C82C91C58.164.170.177.8555564.671.377.986.56875.05829171.478.886.195.51111921031131256.55.85.34.80.1040.1050.1050.1061551401301204.A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater thanthe DC or continuous peak operating voltage level.5.VBR measured at pulse test current IT at an ambient temperature of 25°C.6.Surge current waveform per Figure 2 and derate per Figure 3 of the General Data − 600 Watt at the beginning of this group.7.Bias Voltage = 0 V, F = 1 MHz, TJ = 25°C*The “G’’ suffix indicates Pb−Free package available. Please refer back to Ordering Information on front page.元器件交易网www.cecb2b.com

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SMB8J18CA,TVS瞬变抑制二极管中文资料

SMB8J18CA,TVS瞬变抑制二极管中文资料

SMB8J18CA POWER: 8 00Wa t VOLTAGE RANGE: 5.0 - 40VSMB8J5.0A(CA) - SMB8J40A(CA)

(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminalSYMBOL VALUEUNIT Peak pulse power dissipation with a 10/1000 µsPPPM800W Peak pulse current with a 10/1000 µs waveform (1) IPPM See next table A Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) IFSM 100A

Operating junction and storage temperature range T

J, TSTG - 55 to + 150

°C FeaturesLow profile package

Maximum Ratings@ TA= 25°C unless otherwise specifiedSURFACE MOUNT TRANSIENT VOLAGE SUPPESSOR DIODE

SMBDimMinMaxA3.303.94B4.064.70C1.912.21D0.150.31E5.005.59G0.100.20H0.761.52J2.002.62All Dimensions in mmABCDGHEJCharacteristic!!!!!!Low incremental surge resistanceVery fast response timeExcellent clamping capabilityAvailable in uni-directional and bi-directionalGlass passivated chip junctionIdeal for automated placement!Case:SMB, Transfer Molded EpoxyTerminals: Solderable per MIL-STD-202,Method 208Polarity Indicator: Cathode Band(Note: Bi-directional devices have no polarityindicator.)Weight:0.1 grams (approx.)Mechanical Data!!!!

图文详解双向TVS管P6SMB250CA型号

图文详解双向TVS管P6SMB250CA型号

SpecialistofOvervoltageProtector-1-图文详解双向TVS管P6SMB250CA型号硕凯电子（Sylvia）一、TVS管最大额定值Notes:1.Non-repetitivecurrentpulse,perFig.3andderatedaboveTA=25°CperFig.2.2.Mountedon5.0mmx5.0mm(0.03mmthick)CopperPadstoeachterminal.3.8.3mssinglehalfsine-wave,orequivalentsquarewave,Dutycycle=4pulsesperminutesmaximum.4.VF<3.5VforVBR<200VandVF<6.5VforVBR>201V.二、脉冲浪涌三、TVS管产品图SpecialistofOvervoltageProtector-2-四、脉冲降额曲线五、TVS管产品特性1、为表面安装应用优化电路板空间2、低泄漏3、单向和双向单元4、玻璃钝化结5、低电感6、优良的钳位能力SpecialistofOvervoltageProtector-3-7、600W的峰值功率能力在10×1000μ波形重复率（占空比）：0.01%8、快速响应时间：从0伏特到最小击穿电压通常小于1.0ps9、典型的，在电压高于12V时，反向漏电流小于5μA10、高温焊接：终端260°C/40秒11、典型的最大温度系数△Vbr=0.1%xVbr@25°Cx△T12、塑料包装有保险商实验室可燃性94V-013、无铅镀雾锡14、无卤化，符合RoHS15、典型失效模式是在指定的电压或电流下出现16、晶须测试是基于JEDECJESD201A每个表4a及4c进行的17、IEC-61000-4-2ESD15kV(空气)，8kV(接触)18、数据线的ESD保护符合IEC61000-4-2(IEC801-2)19、数据线的EFT保护符合IEC61000-4-4(IEC801-4)五、电路图六、UL认证编号SpecialistofOvervoltageProtector-4-七、I-V曲线特性八、产品应用说明TVS器件非常适合保护I/O接口，Vcc总线和其他应用于电信、计算机、工业和消费电子应用的易损电路。

硕凯电子P6SMB33CA瞬变抑制器型号

硕凯电子P6SMB33CA瞬变抑制器型号

SpecialistofOvervoltageProtector-1-硕凯电子P6SMB33CA瞬变抑制器型号硕凯电子（Sylvia）一、脉冲降额曲线二、瞬变抑制器产品特性1、为表面安装应用优化电路板空间2、低泄漏3、单向和双向单元4、玻璃钝化结5、低电感6、优良的钳位能力7、600W的峰值功率能力在10×1000μ波形重复率（占空比）：0.01%8、快速响应时间：从0伏特到最小击穿电压通常小于1.0ps9、典型的，在电压高于12V时，反向漏电流小于5μA10、高温焊接：终端260°C/40秒SpecialistofOvervoltageProtector-2-11、典型的最大温度系数△Vbr=0.1%xVbr@25°Cx△T12、塑料包装有保险商实验室可燃性94V-013、无铅镀雾锡14、无卤化，符合RoHS15、典型失效模式是在指定的电压或电流下出现16、晶须测试是基于JEDECJESD201A每个表4a及4c进行的17、IEC-61000-4-2ESD15kV(空气)，8kV(接触)18、数据线的ESD保护符合IEC61000-4-2(IEC801-2)19、数据线的EFT保护符合IEC61000-4-4(IEC801-4)三、最大额定值Notes:1.Non-repetitivecurrentpulse,perFig.3andderatedaboveTA=25°CperFig.2.2.Mountedon5.0mmx5.0mm(0.03mmthick)CopperPadstoeachterminal.3.8.3mssinglehalfsine-wave,orequivalentsquarewave,Dutycycle=4pulsesperminutesmaximum.4.VF<3.5VforVBR<200VandVF<6.5VforVBR>201V.四、电路图SpecialistofOvervoltageProtector-3-五、脉冲浪涌五、产品应用说明TVS器件非常适合保护I/O接口，Vcc总线和其他应用于电信、计算机、工业和消费电子应用的易损电路。六、产品图SpecialistofOvervoltageProtector-4-七、I-V曲线特性八、UL认证编号

P6KE180A,TVS瞬变抑制二极管中文资料

P6KE180A,TVS瞬变抑制二极管中文资料

P6KE180A

POWER: 600Wa t VOLTAGE RANGE: 6.8 - 440VP6KE6.8A(CA)-P6KE440A(CA)

Classification Rating 94V-OFeatures Glass Passivated Die Construction Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Plastic Case Material has UL FlammabilityMechanical Data Case: JEDEC DO-15 Low Profile Molded Plastic Terminals: Axial Leads, Solderable perMIL-STD-202, Method 208 Polarity: Cathode Band or Cathode NotchWeight: 0.40 grams (approx.)

Maximum Ratings and Electrical Characteristics@TA=25°C unless otherwise specifiedCharacteristicSymbolValue

Unit Peak Pulse Power Dissipation at TA = 25°C (Note 1, 2, 5) Figure 3PPPM600 MinimumW Peak Forward Surge Current (Note 3)IFSM100A Peak Pulse Current on 10/1000µS Waveform (Note 1) Figure 1IPPMSee Table 1A Steady State Power Dissipation (Note 2, 4)PM(AV)5.0W Operating and Storage Temperature RangeTj, TSTG-65 to +175°CNote:1. Non-repetitive current pulse, per Figure 1 and derated above TA = 25°C per Figure 4.2. Mounted on 40mm2 copper pad.3. 8.3ms single half sine-wave duty cycle = 4 pulses per minutes maximum.4. Lead temperature at 75°C = TL .5. Peak pulse power waveform is 10/1000µS.AXIAL LEADED TRANSIENT VOLTAGE SUPPERSSOR DIODE