IRL3103资料
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IRL3103HEXFET® Power MOSFET
3/16/01Parameter
Typ.Max.UnitsRθJCJunction-to-Case–––1.6RθCSCase-to-Sink, Flat, Greased Surface0.50–––°C/WRθ
JAJunction-to-Ambient–––62Thermal Resistancewww.irf.com1VDSS = 30VRDS(on) = 12mΩID = 64ASDG
TO-220ABAdvanced HEXFET® Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design that HEXFET power MOSFETs are wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts. The low thermalresistance and low package cost of the TO-220 contributeto its wide acceptance throughout the industry.DescriptionPD - 91337
Absolute Maximum RatingsParameterMax.UnitsID @ TC = 25°CContinuous Drain Current, VGS @ 10V64ID @ TC = 100°CContinuous Drain Current, VGS @ 10V45AIDMPulsed Drain Current 220PD @TC = 25°CPower Dissipation94WLinear Derating Factor0.63W/°CVGSGate-to-Source Voltage ± 16VIARAvalanche Current34AEARRepetitive Avalanche Energy22mJdv/dtPeak Diode Recovery dv/dt 5.0V/nsTJOperating Junction and-55 to + 175TSTGStorage Temperature RangeSoldering Temperature, for 10 seconds300 (1.6mm from case )°CMounting torque, 6-32 or M3 srew10 lbf•in (1.1N•m)lAdvanced Process TechnologylUltra Low On-ResistancelDynamic dv/dt Ratingl175°C Operating TemperaturelFast SwitchinglFully Avalanche Rated元器件交易网www.cecb2b.com
IRL3103元器件交易网www.cecb2b.com
IRL3103元器件交易网www.cecb2b.com
IRL3103元器件交易网www.cecb2b.com
IRL3103元器件交易网www.cecb2b.com
IRL3103元器件交易网www.cecb2b.com
IRL3103元器件交易网www.cecb2b.com
IRL3103元器件交易网www.cecb2b.com