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IRF9230资料

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IRF9230

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.Prelim. 9/9639.95 (1.573)max.17.15 (0.675)16.64 (0.655)30.40 (1.197)30.15 (1.187)26.67 (1.050)max.11.18 (0.440)10.67 (0.420)124.09 (0.161)3.84 (0.151)dia.2 plcs.20.32 (0.800)18.80 (0.740)dia.7.87 (0.310)6.99 (0.275)12.07 (0.475)11.30 (0.445)1.78 (0.070)1.52 (0.060)1.09 (0.043)0.97 (0.038)dia.2 plcs.VGSGate – Source VoltageIDContinuous Drain Current(VGS= 0 , Tcase= 25°C)IDContinuous Drain Current(VGS= 0 , Tcase= 100°C)IDMPulsedDrain Current 1PDPower Dissipation @ Tcase= 25°CLinear Derating FactorEASSingle Pulse Avalanche Energy 2IARAvalanche Current 2EARRepetitive Avalanche Energy 2dv/dtPeak Diode Recovery 3TJ, TstgOperating and Storage Temperature RangeTLLead Temperature 1.6mm (0.63”) from case for10 sec.MECHANICAL DATADimensions in mm (inches)P–CHANNELPOWER MOSFET

ABSOLUTE MAXIMUM RATINGS (Tcase= 25°C unlessotherwise stated)FEATURES• HERMETICALLY SEALED TO–3 METALPACKAGE• SIMPLE DRIVE REQUIREMENTS• SCREENING OPTIONS AVAILABLETO–3 Metal PackagePin 1 – GatePin 2 – SourceCase – Drain

Notes1) Pulse Test: Pulse Width ≤300µs, δ≤2%2) @ VDD= –50V , L ≥2.3mH , RG= 25Ω, Peak IL= –6.5A , Starting TJ= 25°C3) @ ISD≤–6.5A , di/dt ≤–100A/µs , VDD≤BVDSS, TJ≤150°C , Suggested RG= 7.5ΩVDSS–200VID(cont)–6.5ARDS(on)0.8Ω

±20V–6.5A–4A–28A75W0.6W/°C66mJ–6.5A7.5mJ–5V/ns–55 to +150°C300°C元器件交易网www.cecb2b.comIRF9230

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.Prelim. 9/96ParameterTest ConditionsMin.Typ.Max.Unit–200–0.20.800.92–2–42–25–250–100100700200408310.87.05.0175010010080–6.5–28–6.04004Negligible5.0131.670.1230VGS= 0ID= –1mAReference to 25°CID= –1mAVGS= 10VID= –4AVGS= 10VID= –6.5AVDS= VGSID= –250mAVDS≥–15VIDS= –4AVGS= 0VDS= 0.8BVDSSTJ= 125°CVGS= –20VVGS= 20VVGS= 0VDS= –25Vf = 1MHzVGS= –10VID= –6.5AVDS= 0.5BVDSSVDD= –100VID= –6.5ARG= 7.5ΩIS= –6.5ATJ= 25°CVGS= 0IF= –6.5ATJ= 25°Cdi/ dt≤–100A/µsVDD≤–50VELECTRICAL CHARACTERISTICS (Tcase= 25°C unless otherwise stated)Drain – Source Breakdown VoltageTemperature Coefficient of Breakdown VoltageStatic Drain – Source On–StateResistance 1Gate Threshold VoltageForward Transconductance 1Zero Gate Voltage Drain CurrentForward Gate – Source LeakageReverse Gate – Source LeakageInput CapacitanceOutput CapacitanceReverse Transfer CapacitanceTotal Gate ChargeGate – Source ChargeGate – Drain (“Miller”) ChargeTurn–On Delay TimeRise TimeTurn–Off Delay TimeFall TimeContinuous Source CurrentPulse Source Current 2Diode Forward Voltage 1Reverse Recovery Time 1Reverse Recovery ChargeForward Turn–On TimeVV/°CΩVS (É)µAnApFnCnsAVnsµCnH°C/WBVDSS∆BVDSS∆TJRDS(on)VGS(th)gfsIDSSIGSSIGSSCissCossCrssQgQgsQgdtd(on)trtd(off)tfISISMVSDtrrQrrtonLDLSRθJCRθCSRθJASTATIC ELECTRICAL RATINGS

Notes1) Pulse Test: Pulse Width ≤300ms, δ≤2%2) Repetitive Rating – Pulse width limited by maximum junction temperature.DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS

Internal Drain Inductance (measured from 6mm down drain lead to centre of die)Internal Source Inductance (from 6mm down source lead to source bond pad)Thermal Resistance Junction – CaseThermal Resistance Case – SinkThermal Resistance Junction – AmbientPACKAGE CHARACTERISTICSTHERMAL CHARACTERISTICS元器件交易网www.cecb2b.com

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IRF9230资料

IRF9230资料

IRF9230

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.Prelim. 9/9639.95 (1.573)max.17.15 (0.675)16.64 (0.655)30.40 (1.197)30.15 (1.187)26.67 (1.050)max.11.18 (0.440)10.67 (0.420)124.09 (0.161)3.84 (0.151)dia.2 plcs.20.32 (0.800)18.80 (0.740)dia.7.87 (0.310)6.99 (0.275)12.07 (0.475)11.30 (0.445)1.78 (0.070)1.52 (0.060)1.09 (0.043)0.97 (0.038)dia.2 plcs.VGSGate – Source VoltageIDContinuous Drain Current(VGS= 0 , Tcase= 25°C)IDContinuous Drain Current(VGS= 0 , Tcase= 100°C)IDMPulsedDrain Current 1PDPower Dissipation @ Tcase= 25°CLinear Derating FactorEASSingle Pulse Avalanche Energy 2IARAvalanche Current 2EARRepetitive Avalanche Energy 2dv/dtPeak Diode Recovery 3TJ, TstgOperating and Storage Temperature RangeTLLead Temperature 1.6mm (0.63”) from case for10 sec.MECHANICAL DATADimensions in mm (inches)P–CHANNELPOWER MOSFET

IR公司_大功率MOS管选型

IR公司_大功率MOS管选型

IDContinuousDrainCurrent

(A)70°

Micro3Surface Mount PackagesV(BR)DSSDrain-to-SourceBreakdownVoltage(V)RDS(on)On-StateResistance()ΩIDContinuousDrainCurrent25°C(A)RΘMax.ThermalResistance(°C/W)1FaxonDemandNumberCaseOutlineKeyPartNumberPDMax.PowerDissipation(W)1HEXFET Power MOSFETs®

N-ChannelLogic Level

IRLML2402*912570.54200.251.2

0.95230H1

IRLML2803912580.54300.251.20.93230

P-ChannelLogic Level

IRLML6302*912590.54-200.6-0.62-4.8230H1

IRLML5103912600.54-300.6-0.61-4.8230

* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1

Micro3SO-8

D-PakD -PakSOT-227

Micro6SOT-223

Micro82 Illustrations not to scale

To view a datasheet, click on the part numberIDContinuousDrainCurrent

(A)70°

Micro6Surface Mount PackagesV(BR)DSSDrain-to-SourceBreakdownVoltage(V)RDS(on)On-StateResistance()ΩIDContinuousDrainCurrent25°C(A)RΘMax.ThermalResistance(°C/W)1FaxonDemandNumberCaseOutlineKeyPartNumberPDMax.PowerDissipation(W)1HEXFET Power MOSFETs®

IRF540_03中文资料

IRF540_03中文资料

1/8February 2003

NEW DATASHEET ACCORDING TO PCN DSG/CT/1C16 MARKING: IRF540 &IRF540

N-CHANNEL 100V - 0.055 Ω - 22A TO-220

LOW GATE CHARGE STripFET™ II POWER MOSFET

s

TYPICAL R

DS(on) = 0.055Ω

sEXCEPTIONAL dv/dt CAPABILITY

s100% AVALANCHE TESTED

sLOW GATE CHARGE

sAPPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This MOSFET series realized with STMicroelectronics

unique STripFET process has specifically been designed

to minimize input capacitance and gate charge. It is

therefore suitable as primary switch in advanced high-

efficiency, high-frequency isolated DC-DC converters for

Telecom and Computer applications. It is also intended

for any applications with low gate drive requirements.

APPLICATIONS

sHIGH-EFFICIENCY DC-DC CONVERTERS

sUPS AND MOTOR CONTROLTYPEV

DSSR

DS(on)I

D

IRF540100 V<0.077 Ω

22 A

123

TO-220

Ordering InformationABSOLUTE MAXIMUM RATINGS

IRF520中文资料

IRF520中文资料

IRF520

IRF520FI

N-CHANNELENHANCEMENTMODE

POWERMOSTRANSISTORS

sTYPICALRDS(on)=0.23Ω

sAVALANCHERUGGEDTECHNOLOGY

s100%AVALANCHETESTED

sREPETITIVEAVALANCHEDATAAT100oC

sLOWGATECHARGE

sHIGHCURRENTCAPABILITY

s175oCOPERATINGTEMPERATURE

APPLICATIONS

sHIGHCURRENT,HIGHSPEEDSWITCHING

sSOLENOIDANDRELAYDRIVERS

sREGULATORS

sDC-DC&DC-ACCONVERTERS

sMOTORCONTROL,AUDIOAMPLIFIERS

sAUTOMOTIVEENVIRONMENT(INJECTION,

ABS,AIR-BAG,LAMPDRIVERS,Etc.)INTERNALSCHEMATICDIAGRAM123

TO-220ISOWATT220

June1993TYPEVDSSRDS(on)ID

IRF520

IRF520FI100V

100V<0.27Ω

<0.27Ω10A

7A

ABSOLUTEMAXIMUMRATINGS

SymbolParameterValueUnit

IRF520IRF520FI

VDSDrain-sourceVoltage(VGS=0)100V

VDGRDrain-gateVoltage(RGS=20kΩ)100V

VGSGate-sourceVoltage±20V

IDDrainCurrent(cont.)atTc=25oC107A

IDDrainCurrent(cont.)atTc=100oC75A

IDM(•)DrainCurrent(pulsed)4040A

PtotTotalDissipationatTc=25oC7035W

DeratingFactor0.470.23W/oC